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公开(公告)号：US12046509B2
公开(公告)日：2024-07-23
申请号：US17128866
申请日：2020-12-21
IPC分类号： H01L21/768 , H01L23/00 , H01L23/52
CPC分类号： H01L21/76838 , H01L23/52 , H01L23/564
摘要： A semiconductor device and a method of manufacturing a semiconductor are provided. In an embodiment, a metallic layer may be formed over a semiconductor substrate. An anti-reflective layer may be formed over the metallic layer. A passivation layer may be formed over the anti-reflective layer. An opening may be formed in the passivation layer to expose the anti-reflective layer.
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公开(公告)号：US20160268177A1
公开(公告)日：2016-09-15
申请号：US15062828
申请日：2016-03-07
IPC分类号： H01L21/66 , H01L29/739 , H01L29/861 , H01L29/78
CPC分类号： H01L22/30 , H01L22/20 , H01L29/456 , H01L29/47 , H01L29/7393 , H01L29/7801
摘要： A semiconductor arrangement is presented. The semiconductor arrangement comprises a semiconductor body, the semiconductor body including a semiconductor drift region, wherein the semiconductor drift region has dopants of a first conductivity type; a first semiconductor sense region and a second semiconductor sense region, wherein each of the first semiconductor sense region and the second semiconductor sense region is electrically connected to the semiconductor drift region and has dopants of a second conductivity type different from said first conductivity type; a first metal contact comprising a first metal material, the first metal contact being in contact with the first semiconductor sense region, wherein a transition between the first metal contact and the first semiconductor sense region forms a first metal-to-semiconductor transition; a second metal contact comprising a second metal material different from said first metal material, the second metal contact being separated from the first metal contact and in contact with the second semiconductor sense region, a transition between the second metal contact and the second semiconductor sense region forming a second metal-to-semiconductor transition different from said first metal-to-semiconductor transition; first electrical transmission means, the first electrical transmission means being arranged and configured for providing a first sense signal derived from an electrical parameter of the first metal contact to a first signal input of a sense signal processing unit; and second electrical transmission means separated from said first electrical transmission means, the second electrical transmission means being arranged and configured for providing a second sense signal derived from an electrical parameter of the second metal contact to a second signal input of said sense signal processing unit.
摘要翻译： 介绍了半导体布置。 所述半导体装置包括半导体本体，所述半导体本体包括半导体漂移区，其中所述半导体漂移区具有第一导电类型的掺杂剂; 第一半导体感测区域和第二半导体感测区域，其中第一半导体感测区域和第二半导体感测区域中的每一个电连接到半导体漂移区域，并且具有不同于所述第一导电类型的第二导电类型的掺杂剂; 第一金属触点，包括第一金属材料，所述第一金属触点与所述第一半导体感测区域接触，其中所述第一金属触点和所述第一半导体感测区域之间的转变形成第一金属对半导体转变; 包括不同于所述第一金属材料的第二金属材料的第二金属触点，所述第二金属触点与所述第一金属触点分离并与所述第二半导体感测区域接触，所述第二金属触点和所述第二半导体感测区域之间的过渡 形成不同于所述第一金属 - 半导体转变的第二金属 - 半导体转变; 第一电传输装置，第一电传输装置被布置和配置为将从第一金属触点的电参数导出的第一感测信号提供给感测信号处理单元的第一信号输入; 以及与所述第一电传输装置分离的第二电传输装置，所述第二电传输装置被布置和配置为将从所述第二金属触点的电参数导出的第二感测信号提供给所述感测信号处理单元的第二信号输入。
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公开(公告)号：US20170352602A1
公开(公告)日：2017-12-07
申请号：US15683460
申请日：2017-08-22
IPC分类号： H01L21/66 , H01L29/78 , H01L29/739 , H01L29/47 , H01L29/45
CPC分类号： H01L22/30 , H01L22/20 , H01L29/456 , H01L29/47 , H01L29/7393 , H01L29/7801
摘要： A semiconductor arrangement is presented. The semiconductor arrangement comprises a semiconductor body, the semiconductor body including a semiconductor drift region, wherein the semiconductor drift region has dopants of a first conductivity type; a first semiconductor sense region and a second semiconductor sense region, wherein each of the first semiconductor sense region and the second semiconductor sense region is electrically connected to the semiconductor drift region and has dopants of a second conductivity type different from said first conductivity type; a first metal contact comprising a first metal material, the first metal contact being in contact with the first semiconductor sense region, wherein a transition between the first metal contact and the first semiconductor sense region forms a first metal-to-semiconductor transition; a second metal contact comprising a second metal material different from said first metal material, the second metal contact being separated from the first metal contact and in contact with the second semiconductor sense region, a transition between the second metal contact and the second semiconductor sense region forming a second metal-to-semiconductor transition different from said first metal-to-semiconductor transition; first electrical transmission means, the first electrical transmission means being arranged and configured for providing a first sense signal derived from an electrical parameter of the first metal contact to a first signal input of a sense signal processing unit; and second electrical transmission means separated from said first electrical transmission means, the second electrical transmission means being arranged and configured for providing a second sense signal derived from an electrical parameter of the second metal contact to a second signal input of said sense signal processing unit.
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4.发明授权Semiconductor device having a corrosion-resistant metallization and method for manufacturing thereof 有权具有耐腐蚀性金属化的半导体装置及其制造方法公开(公告)号：US09355958B2
公开(公告)日：2016-05-31
申请号：US14068398
申请日：2013-10-31
IPC分类号： H01L23/532 , H01L21/768 , H01L29/40 , H01L23/482
CPC分类号： H01L23/53219 , H01L21/76846 , H01L23/4824 , H01L29/404 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a semiconductor substrate having a first side, a second side opposite the first side, an active area, an outer rim, and an edge termination area arranged between the outer rim and the active area. A metallization structure is arranged on the first side of the semiconductor substrate and comprising at least a first metal layer comprised of a first metallic material and a second metal layer comprised of a second metallic material, wherein the first metallic material is electrochemically more stable than the second metallic material. The first metal layer extends laterally further towards the outer rim than the second metal layer.
摘要翻译： 半导体器件包括具有第一侧，与第一侧相对的第二侧，有源区，外缘和布置在外缘和有源区之间的边缘终端区的半导体衬底。 金属化结构布置在半导体衬底的第一侧上，并且至少包括由第一金属材料构成的第一金属层和由第二金属材料构成的第二金属层，其中第一金属材料在电化学上比 第二金属材料。 第一金属层比第二金属层向外侧边延伸。
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5.发明申请POWER SEMICONDUCTOR DEVICE,POWER ELECTRONIC MODULE, AND METHOD FOR PROCESSING A POWER SEMICONDUCTOR DEVICE 审中-公开功率半导体器件，功率电子模块和用于处理功率半导体器件的方法公开(公告)号：US20150262814A1
公开(公告)日：2015-09-17
申请号：US14207685
申请日：2014-03-13
发明人： Mathias Plappert , Eric Graetz , Andreas Behrendt , Oliver Humbel , Carsten Schaeffer , Angelika Koprowski
CPC分类号： H01L21/02126 , H01L21/02282 , H01L21/02318 , H01L23/296 , H01L23/3171 , H01L23/564 , H01L24/05 , H01L29/0619 , H01L29/404 , H01L29/66325 , H01L29/73 , H01L29/7393 , H01L2224/04042 , H01L2224/4847 , H01L2924/13055 , H01L2924/181 , H01L2924/00
摘要： A power semiconductor device in accordance with various embodiments may include: a semiconductor body; and a passivation layer disposed over at least a portion of the semiconductor body, wherein the passivation layer includes an organic dielectric material having a water uptake of less than or equal to 0.5 wt % in saturation.
摘要翻译： 根据各种实施例的功率半导体器件可以包括：半导体本体; 以及设置在所述半导体本体的至少一部分上的钝化层，其中所述钝化层包括具有小于或等于饱和度的0.5重量％的吸水率的有机介电材料。
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公开(公告)号：US09793184B2
公开(公告)日：2017-10-17
申请号：US15062828
申请日：2016-03-07
IPC分类号： H01L29/78 , H01L21/66 , H01L29/739 , H01L29/45 , H01L29/47
CPC分类号： H01L22/30 , H01L22/20 , H01L29/456 , H01L29/47 , H01L29/7393 , H01L29/7801
摘要： A semiconductor arrangement is presented. The semiconductor arrangement comprises a semiconductor body, the semiconductor body including a semiconductor drift region, wherein the semiconductor drift region has dopants of a first conductivity type; a first semiconductor sense region and a second semiconductor sense region, wherein each of the first semiconductor sense region and the second semiconductor sense region is electrically connected to the semiconductor drift region and has dopants of a second conductivity type different from said first conductivity type; a first metal contact comprising a first metal material, the first metal contact being in contact with the first semiconductor sense region, wherein a transition between the first metal contact and the first semiconductor sense region forms a first metal-to-semiconductor transition; a second metal contact comprising a second metal material different from said first metal material, the second metal contact being separated from the first metal contact and in contact with the second semiconductor sense region, a transition between the second metal contact and the second semiconductor sense region forming a second metal-to-semiconductor transition different from said first metal-to-semiconductor transition; first electrical transmission means, the first electrical transmission means being arranged and configured for providing a first sense signal derived from an electrical parameter of the first metal contact to a first signal input of a sense signal processing unit; and second electrical transmission means separated from said first electrical transmission means, the second electrical transmission means being arranged and configured for providing a second sense signal derived from an electrical parameter of the second metal contact to a second signal input of said sense signal processing unit.
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7.发明申请公开(公告)号：US20150115449A1
公开(公告)日：2015-04-30
申请号：US14068398
申请日：2013-10-31
IPC分类号： H01L23/532 , H01L21/768
CPC分类号： H01L23/53219 , H01L21/76846 , H01L23/4824 , H01L29/404 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a semiconductor substrate having a first side, a second side opposite the first side, an active area, an outer rim, and an edge termination area arranged between the outer rim and the active area. A metallization structure is arranged on the first side of the semiconductor substrate and comprising at least a first metal layer comprised of a first metallic material and a second metal layer comprised of a second metallic material, wherein the first metallic material is electrochemically more stable than the second metallic material. The first metal layer extends laterally further towards the outer rim than the second metal layer.
摘要翻译： 半导体器件包括具有第一侧，与第一侧相对的第二侧，有源区，外缘和布置在外缘和有源区之间的边缘终端区的半导体衬底。 金属化结构布置在半导体衬底的第一侧上，并且至少包括由第一金属材料构成的第一金属层和由第二金属材料构成的第二金属层，其中第一金属材料在电化学上比 第二金属材料。 第一金属层比第二金属层向外侧边延伸。
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公开(公告)号：US20190385842A1
公开(公告)日：2019-12-19
申请号：US16426051
申请日：2019-05-30
发明人： Joachim Hirschler , Georg Ehrentraut , Christoffer Erbert , Klaus Goeschl , Markus Heinrici , Michael Hutzler , Wolfgang Koell , Stefan Krivec , Ingmar Neumann , Mathias Plappert , Michael Roesner , Olaf Storbeck
摘要： In one aspect, a method of forming a silicon-insulator layer is provided. The method includes arranging a silicon structure in a plasma etch process chamber and applying a plasma to the silicon structure in the plasma etch process chamber at a temperature of the silicon structure equal to or below 100° C. The plasma includes a component and a halogen derivate, thereby forming the silicon-insulator layer. The silicon-insulator layer includes silicon and the component. In another aspect, a semiconductor device is provided having a silicon-insulator layer formed by the method.
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公开(公告)号：US11195713B2
公开(公告)日：2021-12-07
申请号：US16426051
申请日：2019-05-30
发明人： Joachim Hirschler , Georg Ehrentraut , Christoffer Erbert , Klaus Goeschl , Markus Heinrici , Michael Hutzler , Wolfgang Koell , Stefan Krivec , Ingmar Neumann , Mathias Plappert , Michael Roesner , Olaf Storbeck
摘要： In one aspect, a method of forming a silicon-insulator layer is provided. The method includes arranging a silicon structure in a plasma etch process chamber and applying a plasma to the silicon structure in the plasma etch process chamber at a temperature of the silicon structure equal to or below 100° C. The plasma includes a component and a halogen derivate, thereby forming the silicon-insulator layer. The silicon-insulator layer includes silicon and the component. In another aspect, a semiconductor device is provided having a silicon-insulator layer formed by the method.
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公开(公告)号：US10361096B2
公开(公告)日：2019-07-23
申请号：US15677091
申请日：2017-08-15
IPC分类号： H01L21/3215 , H01L23/00 , H01L21/768 , H01L23/31 , H01L23/29 , H01L29/66 , H01L29/739 , H01L29/40 , H01L29/06 , H01L29/417 , H01L29/74
摘要： In various embodiments, a method is provided. The method includes forming a metallization layer above at least one first region of a substrate. After forming the metallization layer at least one second region of the substrate is free of the metallization layer. The method further includes forming a barrier layer above the at least one first region of the substrate and above the at least one second region of the substrate. The barrier layer in the at least one first region of the substrate directly adjoins the metallization layer. The method further includes removing the barrier layer in the at least one first region of the substrate by drive-in of the barrier layer into the metallization layer.
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