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公开(公告)号：US08809952B2
公开(公告)日：2014-08-19
申请号：US13707386
申请日：2012-12-06
发明人： Erhard Landgraf , Thomas Bertrams , Claus Dahl , Henning Feick , Andreas Pribil
IPC分类号： H01L29/78 , H01L21/3065
CPC分类号： H01L29/7816 , H01L21/02107 , H01L21/0334 , H01L21/266 , H01L29/0649 , H01L29/0692 , H01L29/0847 , H01L29/0882 , H01L29/1095 , H01L29/401 , H01L29/402 , H01L29/42368 , H01L29/4238 , H01L29/456 , H01L29/4933 , H01L29/66325 , H01L29/665 , H01L29/66659 , H01L29/66681 , H01L29/7393 , H01L29/7835
摘要： A transistor component includes an active transistor region arranged in the semiconductor body. And insulation region surrounds the active transistor region in the semiconductor body in a ring-shaped manner. A source zone, a drain zone, a body zone and a drift zone are disposed in the active transistor region. The source zone and the drain zone are spaced apart in a lateral direction of the semiconductor body and the body zone is arranged between the source zone and the drift zone and the drift zone is arranged between the body zone and the drain zone. A gate and field electrode is arranged over the active transistor region. The dielectric layer has a first thickness in a region near the body zone and a second thickness in a region near the drift zone.
摘要翻译： 晶体管组件包括布置在半导体本体中的有源晶体管区域。 并且绝缘区域以环形方式围绕半导体主体中的有源晶体管区域。 源极区，漏极区，体区和漂移区设置在有源晶体管区域中。 源极区域和漏极区域在半导体主体的横向方向上间隔开，并且主体区域布置在源极区域和漂移区域之间，并且漂移区域布置在体区域和排出区域之间。 栅极和场电极布置在有源晶体管区域的上方。 电介质层在体区附近具有第一厚度，在漂移区附近的区域具有第二厚度。
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2.发明授权公开(公告)号：US09812369B2
公开(公告)日：2017-11-07
申请号：US15083774
申请日：2016-03-29
发明人： Frank Hoffmann , Dirk Manger , Andreas Pribil , Marc Probst , Stefan Tegen
IPC分类号： H01L21/8249 , H01L27/06 , H01L29/06 , H01L29/08 , H01L29/10 , H01L29/66 , H01L29/737
CPC分类号： H01L21/8249 , H01L27/0623 , H01L29/0649 , H01L29/0692 , H01L29/0804 , H01L29/0817 , H01L29/0821 , H01L29/1004 , H01L29/66242 , H01L29/66272 , H01L29/7371
摘要： A method comprises providing a substrate of a first conductive type and a layer stack arranged on the substrate. The layer stack comprises a first isolation layer, a sacrificial layer, and a second isolation layer. The layer stack comprises a window formed in the layer stack through the second isolation layer, the sacrificial layer and the first isolation layer up to a surface region of the substrate. The method comprises providing a collector layer. The method comprises providing a base layer on the collector layer within the window of the layer stack. The method comprises providing an emitter layer or an emitter layer stack comprising the emitter layer on the base layer within the window of the layer stack. The method further comprises selectively removing the emitter layer or the emitter layer stack at least up to the second isolation layer.
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公开(公告)号：US09166039B2
公开(公告)日：2015-10-20
申请号：US14321302
申请日：2014-07-01
发明人： Erhard Landgraf , Thomas Bertrams , Claus Dahl , Henning Feick , Andreas Pribil
IPC分类号： H01L29/78 , H01L21/02 , H01L29/66 , H01L21/033 , H01L21/266 , H01L29/40 , H01L29/423 , H01L29/739 , H01L29/10 , H01L29/45 , H01L29/49 , H01L29/06 , H01L29/08
CPC分类号： H01L29/7816 , H01L21/02107 , H01L21/0334 , H01L21/266 , H01L29/0649 , H01L29/0692 , H01L29/0847 , H01L29/0882 , H01L29/1095 , H01L29/401 , H01L29/402 , H01L29/42368 , H01L29/4238 , H01L29/456 , H01L29/4933 , H01L29/66325 , H01L29/665 , H01L29/66659 , H01L29/66681 , H01L29/7393 , H01L29/7835
摘要： A transistor component includes an active transistor region arranged in the semiconductor body. And insulation region surrounds the active transistor region in the semiconductor body in a ring-shaped manner. A source zone, a drain zone, a body zone and a drift zone are disposed in the active transistor region. The source zone and the drain zone are spaced apart in a lateral direction of the semiconductor body and the body zone is arranged between the source zone and the drift zone and the drift zone is arranged between the body zone and the drain zone. A gate and field electrode is arranged over the active transistor region. The dielectric layer has a first thickness in a region near the body zone and a second thickness in a region near the drift zone.
摘要翻译： 晶体管组件包括布置在半导体本体中的有源晶体管区域。 并且绝缘区域以环形方式围绕半导体主体中的有源晶体管区域。 源极区，漏极区，体区和漂移区设置在有源晶体管区域中。 源极区域和漏极区域在半导体主体的横向方向上间隔开，并且主体区域布置在源极区域和漂移区域之间，并且漂移区域布置在体区域和排出区域之间。 栅极和场电极布置在有源晶体管区域的上方。 电介质层在体区附近具有第一厚度，在漂移区附近的区域具有第二厚度。
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4.发明授权公开(公告)号：US10312159B2
公开(公告)日：2019-06-04
申请号：US15798972
申请日：2017-10-31
发明人： Frank Hoffmann , Dirk Manger , Andreas Pribil , Marc Probst , Stefan Tegen
IPC分类号： H01L21/8248 , H01L21/8249 , H01L27/06 , H01L29/06 , H01L29/08 , H01L29/10 , H01L29/66 , H01L29/737
摘要： A method comprises providing a substrate of a first conductive type and a layer stack arranged on the substrate. The layer stack comprises a first isolation layer, a sacrificial layer, and a second isolation layer. The layer stack comprises a window formed in the layer stack through the second isolation layer, the sacrificial layer and the first isolation layer up to a surface region of the substrate. The method comprises providing a collector layer. The method comprises providing a base layer on the collector layer within the window of the layer stack. The method comprises providing an emitter layer or an emitter layer stack comprising the emitter layer on the base layer within the window of the layer stack. The method further comprises selectively removing the emitter layer or the emitter layer stack at least up to the second isolation layer.
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公开(公告)号：US20140339634A1
公开(公告)日：2014-11-20
申请号：US14321302
申请日：2014-07-01
发明人： Erhard Landgraf , Thomas Bertrams , Claus Dahl , Henning Feick , Andreas Pribil
CPC分类号： H01L29/7816 , H01L21/02107 , H01L21/0334 , H01L21/266 , H01L29/0649 , H01L29/0692 , H01L29/0847 , H01L29/0882 , H01L29/1095 , H01L29/401 , H01L29/402 , H01L29/42368 , H01L29/4238 , H01L29/456 , H01L29/4933 , H01L29/66325 , H01L29/665 , H01L29/66659 , H01L29/66681 , H01L29/7393 , H01L29/7835
摘要： A transistor component includes an active transistor region arranged in the semiconductor body. And insulation region surrounds the active transistor region in the semiconductor body in a ring-shaped manner. A source zone, a drain zone, a body zone and a drift zone are disposed in the active transistor region. The source zone and the drain zone are spaced apart in a lateral direction of the semiconductor body and the body zone is arranged between the source zone and the drift zone and the drift zone is arranged between the body zone and the drain zone. A gate and field electrode is arranged over the active transistor region. The dielectric layer has a first thickness in a region near the body zone and a second thickness in a region near the drift zone.
摘要翻译： 晶体管组件包括布置在半导体本体中的有源晶体管区域。 并且绝缘区域以环形方式围绕半导体主体中的有源晶体管区域。 源极区，漏极区，体区和漂移区设置在有源晶体管区域中。 源极区域和漏极区域在半导体主体的横向方向上间隔开，并且主体区域布置在源极区域和漂移区域之间，并且漂移区域布置在体区域和排出区域之间。 栅极和场电极布置在有源晶体管区域的上方。 电介质层在体区附近具有第一厚度，在漂移区附近的区域具有第二厚度。
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公开(公告)号：US20130140632A1
公开(公告)日：2013-06-06
申请号：US13707386
申请日：2012-12-06
发明人： Erhard Landgraf , Thomas Bertrams , Claus Dahl , Henning Feick , Andreas Pribil
CPC分类号： H01L29/7816 , H01L21/02107 , H01L21/0334 , H01L21/266 , H01L29/0649 , H01L29/0692 , H01L29/0847 , H01L29/0882 , H01L29/1095 , H01L29/401 , H01L29/402 , H01L29/42368 , H01L29/4238 , H01L29/456 , H01L29/4933 , H01L29/66325 , H01L29/665 , H01L29/66659 , H01L29/66681 , H01L29/7393 , H01L29/7835
摘要： A transistor component includes an active transistor region arranged in the semiconductor body. And insulation region surrounds the active transistor region in the semiconductor body in a ring-shaped manner. A source zone, a drain zone, a body zone and a drift zone are disposed in the active transistor region. The source zone and the drain zone are spaced apart in a lateral direction of the semiconductor body and the body zone is arranged between the source zone and the drift zone and the drift zone is arranged between the body zone and the drain zone. A gate and field electrode is arranged over the active transistor region. The dielectric layer has a first thickness in in a region near the body zone and a second thickness in a region near the drift zone.
摘要翻译： 晶体管组件包括布置在半导体本体中的有源晶体管区域。 并且绝缘区域以环形方式围绕半导体主体中的有源晶体管区域。 源极区，漏极区，体区和漂移区设置在有源晶体管区域中。 源极区域和漏极区域在半导体主体的横向方向上间隔开，并且主体区域布置在源极区域和漂移区域之间，并且漂移区域布置在体区域和排出区域之间。 栅极和场电极布置在有源晶体管区域的上方。 电介质层在体区附近具有第一厚度，在漂移区附近的区域具有第二厚度。
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