公开(公告)号：US09812369B2

公开(公告)日：2017-11-07

申请号：US15083774

申请日：2016-03-29

申请人： Infineon Technologies AG

发明人： Frank Hoffmann ,  Dirk Manger ,  Andreas Pribil ,  Marc Probst ,  Stefan Tegen

IPC分类号： H01L21/8249 ,  H01L27/06 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/66 ,  H01L29/737

CPC分类号： H01L21/8249 ,  H01L27/0623 ,  H01L29/0649 ,  H01L29/0692 ,  H01L29/0804 ,  H01L29/0817 ,  H01L29/0821 ,  H01L29/1004 ,  H01L29/66242 ,  H01L29/66272 ,  H01L29/7371

摘要： A method comprises providing a substrate of a first conductive type and a layer stack arranged on the substrate. The layer stack comprises a first isolation layer, a sacrificial layer, and a second isolation layer. The layer stack comprises a window formed in the layer stack through the second isolation layer, the sacrificial layer and the first isolation layer up to a surface region of the substrate. The method comprises providing a collector layer. The method comprises providing a base layer on the collector layer within the window of the layer stack. The method comprises providing an emitter layer or an emitter layer stack comprising the emitter layer on the base layer within the window of the layer stack. The method further comprises selectively removing the emitter layer or the emitter layer stack at least up to the second isolation layer.

公开(公告)号：US10312159B2

公开(公告)日：2019-06-04

申请号：US15798972

申请日：2017-10-31

申请人： Infineon Technologies AG

发明人： Frank Hoffmann ,  Dirk Manger ,  Andreas Pribil ,  Marc Probst ,  Stefan Tegen

IPC分类号： H01L21/8248 ,  H01L21/8249 ,  H01L27/06 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/66 ,  H01L29/737

摘要： A method comprises providing a substrate of a first conductive type and a layer stack arranged on the substrate. The layer stack comprises a first isolation layer, a sacrificial layer, and a second isolation layer. The layer stack comprises a window formed in the layer stack through the second isolation layer, the sacrificial layer and the first isolation layer up to a surface region of the substrate. The method comprises providing a collector layer. The method comprises providing a base layer on the collector layer within the window of the layer stack. The method comprises providing an emitter layer or an emitter layer stack comprising the emitter layer on the base layer within the window of the layer stack. The method further comprises selectively removing the emitter layer or the emitter layer stack at least up to the second isolation layer.