摘要:
A substrate includes a plurality of semiconductor chips arranged in a grid pattern and laterally spaced from one another by channel regions. The substrate includes a vertical stack of a semiconductor layer and at least one dielectric material layer embedding metal interconnect structures. The at least one dielectric material layer are removed along the channel regions and around vertices of the grid pattern so that each semiconductor chip includes corner surfaces that are not parallel to lines of the grid pattern. The corner surfaces can include straight surfaces or convex surfaces. The semiconductor chips are diced and subsequently bonded to a packaging substrate employing an underfill material. The corner surfaces reduce mechanical stress applied to the metal interconnect layer during the bonding process and subsequent thermal cycling processes.
摘要:
A substrate includes a plurality of semiconductor chips arranged in a grid pattern and laterally spaced from one another by channel regions. The substrate includes a vertical stack of a semiconductor layer and at least one dielectric material layer embedding metal interconnect structures. The at least one dielectric material layer are removed along the channel regions and around vertices of the grid pattern so that each semiconductor chip includes corner surfaces that are not parallel to lines of the grid pattern. The corner surfaces can include straight surfaces or convex surfaces. The semiconductor chips are diced and subsequently bonded to a packaging substrate employing an underfill material. The corner surfaces reduce mechanical stress applied to the metal interconnect layer during the bonding process and subsequent thermal cycling processes.
摘要:
A substrate includes a plurality of semiconductor chips arranged in a grid pattern and laterally spaced from one another by channel regions. The substrate includes a vertical stack of a semiconductor layer and at least one dielectric material layer embedding metal interconnect structures. The at least one dielectric material layer are removed along the channel regions and around vertices of the grid pattern so that each semiconductor chip includes corner surfaces that are not parallel to lines of the grid pattern. The corner surfaces can include straight surfaces or convex surfaces. The semiconductor chips are diced and subsequently bonded to a packaging substrate employing an underfill material. The corner surfaces reduce mechanical stress applied to the metal interconnect layer during the bonding process and subsequent thermal cycling processes.
摘要:
A semiconductor wafer includes a nonstick region. During integrated circuit fabrication processes, the wafer may be inserted into an electrodeposition (e.g. plating, etc.) tool. The tool may contact the nonstick region to e.g. prevent leaks, prevent plating upon a shorting layer of the wafer, etc. When the wafer is removed the nonstick region has a propensity to not transfer to the tool, improving tool availability and reducing wafer scraps. The nonstick region may contain a nonstick seal formed from a liquid photoresist based material, an organic dielectric, etc.
摘要:
Structures and methods to reduce maximum current density in a solder ball are disclosed. A method includes forming a contact pad in a last wiring level and forming a plurality of wires of the contact pad extending from side edges of the contact pad to respective ones of a plurality of vias. Each one of the plurality of wires has substantially the same electrical resistance.
摘要:
A wafer and a fabrication method include a base structure including a substrate for fabricating semiconductor devices. The base structure includes a front side where the semiconductor devices are formed and a back side opposite the front side. An integrated layer is formed in the back side of the base structure including impurities configured to alter etch selectivity relative to the base structure such that the integrated layer is selectively removable from the base structure to remove defects incurred during fabrication of the semiconductor devices.
摘要:
Multi-Project Wafers includes a plurality of chiplets from different IP owners. Non-relevant chiplets are implemented with IP protection to inhibit IP disclosure of non-relevant IP owners.
摘要:
A wafer and a fabrication method include a base structure including a substrate for fabricating semiconductor devices. The base structure includes a front side where the semiconductor devices are formed and a back side opposite the front side. An integrated layer is formed in the back side of the base structure including impurities configured to alter etch selectivity relative to the base structure such that the integrated layer is selectively removable from the base structure to remove defects incurred during fabrication of the semiconductor devices.
摘要:
A method forms an integrated circuit structure, using a manufacturing device, to have kerf regions and external contacts, and to have conductive structures in the kerf regions. The method also forms an underfill material on a surface of the integrated circuit structure, using the manufacturing device, that contacts the kerf regions and the external contacts. The underfill material comprises electrically attracted filler particles that affect the coefficient of thermal expansion and elastic modulus of the underfill material. When forming the underfill material, the method applies an electrical charge to the conductive structures and the external contacts.
摘要:
Disclosed is a process of making a semiconductor device wherein an insulation layer has a copper plug in contact with the last wiring layer of the device. There may also be a barrier layer separating the copper plug from the insulation layer. There may also be a cap layer over the copper plug to protect it from oxidation. There may also be a dielectric layer over the cap layer.