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    Recursive metal embedded chip assembly
    2.
    发明授权
    Recursive metal embedded chip assembly 有权

    公开(公告)号：US10026672B1

    公开(公告)日：2018-07-17

    申请号：US15299348

    申请日：2016-10-20

    申请人： HRL Laboratories, LLC

    发明人： Florian G. Herrault ,  Miroslav Micovic

    IPC分类号： H01L21/00 ,  H01L29/06 ,  H01L23/367 ,  H01L21/48 ,  H01L23/373

    摘要： A recursive metal-embedded chip assembly (R-MECA) process and method is described for heterogeneous integration of multiple die from diverse device technologies. The recursive aspect of this integration technology enables integration of increasingly-complex subsystems while bridging different scales for devices, interconnects and components. Additionally, the proposed concepts include high thermal management performance that is maintained through the multiple recursive levels of R-MECA, which is a key requirement for high-performance heterogeneous integration of digital, analog mixed signal and RF subsystems. At the wafer-scale, chips from diverse technologies and different thicknesses are initially embedded in a metal heat spreader surrounded by a mesh wafer host. An embodiment uses metal embedding on the backside of the chips as a key differentiator for high-density integration, and built-in thermal management. After die embedding, wafer-level front side interconnects are fabricated to interconnect the various chips and with each other. The wafer is then diced into individual metal-embedded chip assembly (MECA) modules, and forms the level one for multi-scale R-MECA integration. These modules are subsequently integrated into another wafer or board using the same integration approach recursively. Additional components such as discrete passive resistors, capacitors and inductors can be integrated at the second level, once the high-resolution, high-density integration has been performed at level zero. This recursive integration offers a practical solution to build very large scale integrated systems and subsystems.

    E-plane probe with stepped surface profile for high-frequency
    3.
    发明授权
    E-plane probe with stepped surface profile for high-frequency 有权
    E平面探头具有阶梯式表面轮廓，适用于高频

    公开(公告)号：US09553057B1

    公开(公告)日：2017-01-24

    申请号：US14502347

    申请日：2014-09-30

    申请人： HRL Laboratories, LLC

    发明人： Eric M. Prophet ,  Alexandros D. Margomenos ,  Miroslav Micovic

    IPC分类号： H01L23/66 ,  H01L21/82 ,  H01P1/219

    CPC分类号： H01L23/66 ,  H01L21/82 ,  H01L2223/6683 ,  H01P1/2039 ,  H01P5/107

    摘要： A method of forming an E-plane probe includes forming a plurality of monolithically integrated circuits (MICs) on a wafer, each MIC including a monolithic microwave integrated circuit (MMIC), and an E-plane probe coupled to the MMIC, mounting the wafer on an ultra-violet (UV) tape, cutting the wafer with a laser at a first power and a first linear cutting speed along vertical streets and then along horizontal streets to form separate substrates, cutting with the laser at a second power and a second linear cutting speed a rectangle or a portion of a rectangle from the separate substrates to form narrow substrate extensions on the substrates, and repeating this step for each rectangle or portion of a rectangle to be cut to form substrate extensions, and curing the UV tape, wherein the E-plane probes are on the narrow substrate extensions.

    摘要翻译： 形成E平面探针的方法包括在晶片上形成多个单片集成电路（MIC），每个MIC包括单片微波集成电路（MMIC）和耦合到MMIC的E平面探针，安装晶片 在紫外线（UV）带上，以垂直街道的第一功率和第一线性切割速度用激光切割晶片，然后沿着水平街道形成分离的基板，用第二功率切割激光 线性切割速度是来自分离的基板的矩形或矩形的一部分，以在基板上形成窄的基板延伸部，并且对于每个矩形或要切割的矩形部分重复该步骤以形成基板延伸部，并固化UV带， 其中E平面探针位于窄的衬底延伸部上。