公开(公告)号：US09620532B2

公开(公告)日：2017-04-11

申请号：US14368145

申请日：2013-05-08

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Ning Chen ,  Wei Guo ,  Lu Wang

IPC: H01L29/08 ,  H01L29/04 ,  H01L29/66 ,  H01L29/78 ,  H01L27/12 ,  H01L21/28 ,  H01L29/788 ,  H01L29/423 ,  H01L29/786 ,  G02F1/133 ,  G09G3/20 ,  H01L21/02 ,  H01L21/265 ,  H01L21/311 ,  H01L21/3213 ,  H01L29/16 ,  H01L29/417 ,  H01L29/49 ,  H01L29/51

CPC classification number: H01L27/1251 ,  G02F1/13306 ,  G09G3/2092 ,  G09G2310/0248 ,  G09G2310/08 ,  G09G2320/045 ,  H01L21/0228 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/02667 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/28273 ,  H01L21/31111 ,  H01L21/32133 ,  H01L27/1222 ,  H01L27/1237 ,  H01L27/1262 ,  H01L27/1274 ,  H01L29/04 ,  H01L29/16 ,  H01L29/41733 ,  H01L29/4175 ,  H01L29/42324 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66757 ,  H01L29/66825 ,  H01L29/78675 ,  H01L29/788

Abstract: Embodiments of the disclosure disclose a transistor with floating gate electrode, a manufacturing method thereof, an application method thereof and a display driving circuit. The transistor with floating gate electrode includes a substrate (1), and a floating gate electrode (3), a source electrode (4), a drain electrode (5) and a control gate electrode (6) disposed on the substrate (1). The transistor with floating gate electrode further comprises a first insulating film (7) and a polysilicon film (8) that are sequentially disposed on the substrate (1), and a channel region (2) is formed in the polysilicon film (8) at a position corresponding to the floating gate electrode (3).

公开(公告)号：US20170351154A1

公开(公告)日：2017-12-07

申请号：US15501847

申请日：2016-05-20

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xin Gu ,  Juan Chen ,  Ning Chen

IPC: G02F1/155 ,  G02F1/157 ,  H01L27/32

CPC classification number: G02F1/155 ,  G02F1/157 ,  G02F2001/1555 ,  G02F2001/1557 ,  H01L27/3258

Abstract: The present application discloses a method for fabricating a display substrate including forming an electrode layer comprising a plurality of electrode blocks on a base substrate; each electrode block corresponding to a subpixel region; and forming an electrochromic layer comprising a plurality of electrochromic blocks on the electrode layer by electrochemically depositing an electrochromic material onto the plurality of electrode blocks on a side of the electrode layer distal to the base substrate, each electrochromic block corresponding to each electrode block in a one-to-one relationship.

公开(公告)号：US10408682B2

公开(公告)日：2019-09-10

申请号：US15325417

申请日：2016-02-18

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Ning Chen

IPC: G01J3/50 ,  G09G3/20 ,  G09G5/20

Abstract: A method and apparatus for detecting a display screen are provided. The apparatus comprises: a detection module for detecting components of a primary color in the light at a display side when a first and second display signal are input to the display screen, wherein the first and second display signal are used for displaying a monochromatic image in black and a monochromatic image in a color other than black; and a data processing unit for calculating a difference between components of the primary color which are detected when the first and second display signal are input, and determining whether there is a fault in the display screen according to the difference. The effect of ambient light on detection results can be reduced, and the detection results are more close to the actual case.

公开(公告)号：US10203830B2

公开(公告)日：2019-02-12

申请号：US15778310

申请日：2017-05-25

Applicant: BOE Technology Group Co., Ltd.

Inventor： Yingwei Liu ,  Ning Chen

IPC: G06F3/046 ,  H01L27/12 ,  H01L27/22 ,  H01L43/04 ,  H01L43/06 ,  H01L43/14 ,  G06F3/0354

Abstract: An electronic device, a manufacturing method and an operation method thereof, and an electronic copy system. Each pixel unit of the electronic device includes a Hall-effect working electrode including a first, second, third and fourth contact position, a thin film transistor, a gate line, a first common line, a second common line, a data line and a sensing line. A line connecting the first contact position and the second contact position intersects a line connecting the third contact position and the fourth contact position; the thin film transistor includes a gate electrode connected with the gate line, a source electrode connected with the data line and a drain electrode, the drain electrode and sensing line are respectively connected with the first and second contact position; the first and second common line are respectively connected with the Hall-effect working electrode through the third and fourth contact position.

公开(公告)号：US09780257B1

公开(公告)日：2017-10-03

申请号：US15224234

申请日：2016-07-29

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xiaona Xu ,  Tian Yang ,  Biao Tian ,  Zhao Kang ,  Xiaoyan Zhu ,  Ning Chen ,  Xiang Zhou

IPC: H01L33/06 ,  H01L33/62 ,  H01L33/44

CPC classification number: H01L33/06 ,  H01L33/44 ,  H01L33/62 ,  H01L51/502 ,  H01L51/5253 ,  H01L2933/0025 ,  H01L2933/0033 ,  H01L2933/0066

Abstract: A method of preparing a quantum dot layer, including: placing an anodic aluminum oxide sheet with a plurality of through holes on a substrate; dispersing quantum dots into the plurality of through holes of the anodic aluminum oxide sheet; and removing the anodic aluminum oxide sheet to form a quantum dot layer.

公开(公告)号：US20150340512A1

公开(公告)日：2015-11-26

申请号：US14500184

申请日：2014-09-29

Applicant: Boe Technology Group Co., Ltd.

Inventor： Dongsheng Li ,  Ning Chen ,  Xingdong Liu ,  Wei Guo

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/66 ,  H01L27/12

CPC classification number: H01L29/78696 ,  H01L27/1218 ,  H01L27/1237 ,  H01L27/1259 ,  H01L29/41733 ,  H01L29/4175 ,  H01L29/42384 ,  H01L29/66742 ,  H01L29/66765 ,  H01L29/78603 ,  H01L29/78606

Abstract: A thin film transistor, an array substrate, a method of fabricating the same, and a display device are provided. The thin film transistor includes a substrate plate, and an active layer, a source, and a drain which are arranged on the substrate plate. The thin film transistor also includes an inclined portion which is arranged on the substrate plate in an inclined manner. The active layer is at least partially arranged on the inclined portion. The source and the drain are arranged over the active layer and at least partially overlap the active layer. In this manner, the size of the thin film transistor in a direction parallel with the substrate plate can be effectively reduced.

Abstract translation: 提供薄膜晶体管，阵列基板，其制造方法和显示装置。 薄膜晶体管包括布置在基板上的基板和有源层，源极和漏极。 薄膜晶体管还包括以倾斜方式布置在基板上的倾斜部分。 有源层至少部分地布置在倾斜部分上。 源极和漏极布置在有源层上并且至少部分地与有源层重叠。 以这种方式，可以有效地减小薄膜晶体管在与基板平行的方向上的尺寸。

公开(公告)号：US20180356920A1

公开(公告)日：2018-12-13

申请号：US15778310

申请日：2017-05-25

Applicant: BOE Technology Group Co., Ltd.

Inventor： Yingwei Liu ,  Ning Chen

IPC: G06F3/046 ,  H01L43/04 ,  H01L27/22 ,  H01L27/12 ,  H01L43/06 ,  H01L43/14 ,  G06F3/0354

CPC classification number: G06F3/046 ,  G06F3/03545 ,  G06F2203/04103 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1262 ,  H01L27/22 ,  H01L43/04 ,  H01L43/065 ,  H01L43/14

Abstract: An electronic device, a manufacturing method and an operation method thereof, and an electronic copy system. Each pixel unit of the electronic device includes a Hall-effect working electrode including a first, second, third and fourth contact position, a thin film transistor, a gate line, a first common line, a second common line, a data line and a sensing line. A line connecting the first contact position and the second contact position intersects a line connecting the third contact position and the fourth contact position; the thin film transistor includes a gate electrode connected with the gate line, a source electrode connected with the data line and a drain electrode, the drain electrode and sensing line are respectively connected with the first and second contact position; the first and second common line are respectively connected with the Hall-effect working electrode through the third and fourth contact position.

公开(公告)号：US09971223B2

公开(公告)日：2018-05-15

申请号：US15501847

申请日：2016-05-20

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xin Gu ,  Juan Chen ,  Ning Chen

IPC: G02F1/155 ,  G02F1/157 ,  H01L27/32

CPC classification number: G02F1/155 ,  G02F1/157 ,  G02F2001/1555 ,  G02F2001/1557 ,  H01L27/3258

Abstract: The present application discloses a method for fabricating a display substrate including forming an electrode layer comprising a plurality of electrode blocks on a base substrate; each electrode block corresponding to a subpixel region; and forming an electrochromic layer comprising a plurality of electrochromic blocks on the electrode layer by electrochemically depositing an electrochromic material onto the plurality of electrode blocks on a side of the electrode layer distal to the base substrate, each electrochromic block corresponding to each electrode block in a one-to-one relationship.

公开(公告)号：US20170271549A1

公开(公告)日：2017-09-21

申请号：US15224234

申请日：2016-07-29

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xiaona Xu ,  Tian Yang ,  Biao Tian ,  Zhao Kang ,  Xiaoyan Zhu ,  Ning Chen ,  Xiang Zhou

IPC: H01L33/06 ,  H01L33/44 ,  H01L33/62

CPC classification number: H01L33/06 ,  H01L33/44 ,  H01L33/62 ,  H01L51/502 ,  H01L51/5253 ,  H01L2933/0025 ,  H01L2933/0033 ,  H01L2933/0066

Abstract: A method of preparing a quantum dot layer, including: placing an anodic aluminum oxide sheet with a plurality of through holes on a substrate; dispersing quantum dots into the plurality of through holes of the anodic aluminum oxide sheet; and removing the anodic aluminum oxide sheet to form a quantum dot layer.

公开(公告)号：US09508867B2

公开(公告)日：2016-11-29

申请号：US14500184

申请日：2014-09-29

Applicant: Boe Technology Group Co., Ltd.

Inventor： Dongsheng Li ,  Ning Chen ,  Xingdong Liu ,  Wei Guo

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/66 ,  H01L27/12 ,  H01L29/423

CPC classification number: H01L29/78696 ,  H01L27/1218 ,  H01L27/1237 ,  H01L27/1259 ,  H01L29/41733 ,  H01L29/4175 ,  H01L29/42384 ,  H01L29/66742 ,  H01L29/66765 ,  H01L29/78603 ,  H01L29/78606

Abstract: A thin film transistor, an array substrate, a method of fabricating the same, and a display device are provided. The thin film transistor includes a substrate plate, and an active layer, a source, and a drain which are arranged on the substrate plate. The thin film transistor also includes an inclined portion which is arranged on the substrate plate in an inclined manner. The active layer is at least partially arranged on the inclined portion. The source and the drain are arranged over the active layer and at least partially overlap the active layer. In this manner, the size of the thin film transistor in a direction parallel with the substrate plate can be effectively reduced.

Abstract translation: 提供薄膜晶体管，阵列基板，其制造方法和显示装置。 薄膜晶体管包括布置在基板上的基板和有源层，源极和漏极。 薄膜晶体管还包括以倾斜方式布置在基板上的倾斜部分。 有源层至少部分地布置在倾斜部分上。 源极和漏极布置在有源层上并且至少部分地与有源层重叠。 以这种方式，可以有效地减小薄膜晶体管在与基板平行的方向上的尺寸。