公开(公告)号：US20170206922A1

公开(公告)日：2017-07-20

申请号：US15474851

申请日：2017-03-30

Applicant: Applied Materials, Inc.

Inventor： Christopher Dennis BENCHER ,  Roman GOUK ,  Steven VERHAVERBEKE ,  Li-Qun XIA ,  Yong-Won LEE ,  Matthew D. SCOTNEY-CASTLE ,  Martin A. HILKENE ,  Peter I. PORSHNEV

IPC: G11B5/85 ,  G11B5/74

CPC classification number: G11B5/85 ,  G11B5/743 ,  G11B5/855

Abstract: A method and apparatus for forming magnetic media substrates is provided. A patterned resist layer is formed on a substrate having a magnetically susceptible layer. A conformal protective layer is formed over the patterned resist layer to prevent degradation of the pattern during subsequent processing. The substrate is subjected to an energy treatment wherein energetic species penetrate portions of the patterned resist and conformal protective layer according to the pattern formed in the patterned resist, impacting the magnetically susceptible layer and modifying a magnetic property thereof. The patterned resist and conformal protective layers are then removed, leaving a magnetic substrate having a pattern of magnetic properties with a topography that is substantially unchanged.

公开(公告)号：US20160305013A1

公开(公告)日：2016-10-20

申请号：US15193307

申请日：2016-06-27

Applicant: Applied Materials, Inc.

Inventor： Martin A. HILKENE ,  Roman GOUK ,  Matthew D. SCOTNEY-CASTLE ,  Peter I. PORSHNEV

IPC: C23C14/58 ,  C23C14/48 ,  G11B5/62 ,  G11B5/85 ,  G11B5/851 ,  G11B5/858 ,  C23C14/04 ,  C23C14/06

CPC classification number: C23C14/5826 ,  C23C14/042 ,  C23C14/0605 ,  C23C14/48 ,  C23C14/5873 ,  G11B5/62 ,  G11B5/85 ,  G11B5/851 ,  G11B5/858

Abstract: Embodiments described herein provide methods and apparatus for treating a magnetic substrate having an imprinted, oxygen-reactive mask formed thereon by implanting ions into a magnetically active surface of the magnetic substrate through the imprinted oxygen-reactive mask, wherein the ions do not reduce the oxygen reactivity of the mask, and removing the mask by exposing the substrate to an oxygen-containing plasma. The mask may be amorphous carbon, through which carbon-containing ions are implanted into the magnetically active surface. The carbon-containing ions, which may also contain hydrogen, may be formed by activating a mixture of hydrocarbon gas and hydrogen. A ratio of the hydrogen and the hydrocarbon gas may be selected or adjusted to control the ion implantation.

公开(公告)号：US20220129698A1

公开(公告)日：2022-04-28

申请号：US17081459

申请日：2020-10-27

Applicant: Applied Materials, Inc.

Inventor： Ala MORADIAN ,  Martin A. HILKENE ,  Zuoming ZHU ,  Errol Antonio C. SANCHEZ ,  Bindusagar MARATH SANKARATHODI ,  Patricia M. LIU ,  Surendra Singh SRIVASTAVA

IPC: G06K9/62 ,  G06N20/00 ,  H01L21/02

Abstract: Systems, apparatus, and methods are disclosed for foreline diagnostics and control. A foreline coupled to a chamber exhaust is instrumented with one or more sensors, in some embodiments placed between the chamber exhaust and an abatement system. The one or more sensors are positioned to measure pressure in the foreline as an indicator of conductance. The sensors are coupled to a trained machine learning model configured to provide a signal when the foreline needs a cleaning cycle or when preventive maintenance should be performed. In some embodiments, the trained machine learning predicts when cleaning or preventive maintenance will be needed.

公开(公告)号：US20170304877A1

公开(公告)日：2017-10-26

申请号：US15479609

申请日：2017-04-05

Applicant: Applied Materials, Inc.

Inventor： Martin A. HILKENE ,  David K. CARLSON ,  Matthew D. SCOTNEY-CASTLE

IPC: B08B7/00 ,  C30B25/14 ,  B08B9/027 ,  C30B25/16 ,  C30B29/06 ,  H01J37/32

CPC classification number: B08B7/0035 ,  C30B25/14 ,  C30B29/06 ,  H01J37/32357 ,  H01J37/32834 ,  H01J37/32963 ,  H01J2237/335

Abstract: Embodiments of the present disclosure generally relate to a methods and apparatuses for cleaning exhaust systems, such as exhaust systems used with process chambers for the formation of epitaxial silicon. The exhaust system includes a remote plasma source for supplying ionized gas through the exhaust system, and one or more temperature sensors positioned downstream of the remote plasma source.

公开(公告)号：US20150279974A1

公开(公告)日：2015-10-01

申请号：US14622647

申请日：2015-02-13

Applicant: Applied Materials, Inc.

Inventor： Ludovic GODET ,  Christopher HATEM ,  Matthew D. SCOTNEY-CASTLE ,  Martin A. HILKENE

IPC: H01L29/66 ,  H01L21/306 ,  H01L21/223

CPC classification number: H01L29/66803 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/30 ,  H01L21/30604 ,  H01L21/3065

Abstract: Embodiments of the present invention provide methods for forming fin structure with desired materials using a conversion process for three dimensional (3D) stacking of fin field effect transistor (FinFET) for semiconductor chips. In one embodiment, a method of forming a fin structure on a substrate includes performing an directional plasma process on a fin structure formed from a substrate comprising a first type of atoms, the directional plasma process dopes a second type of atoms on sidewalls of the fin structure, performing a surface modification process to form a surface modified layer on the sidewalls of the fin structure reacting with the first type of atoms, replacing the first type of the atoms with the second type of the atoms in the fin structure during the surface modification process, and forming the fin structure including the second type of the atoms on the substrate.

Abstract translation: 本发明的实施例提供了使用用于半导体芯片的鳍式场效应晶体管（FinFET）的三维（3D）堆叠的转换工艺来形成具有所需材料的鳍结构的方法。 在一个实施例中，在衬底上形成翅片结构的方法包括对由包括第一类型的原子的衬底形成的鳍结构执行定向等离子体处理，所述定向等离子体工艺在鳍的侧壁上掺杂第二类型的原子 结构，进行表面改性处理以在与第一类型的原子反应的翅片结构的侧壁上形成表面改性层，在表面改性期间用翅片结构中的第二类型的原子代替第一类型的原子 处理，并且形成包括基板上的第二类型的原子的翅片结构。

公开(公告)号：US20240318351A1

公开(公告)日：2024-09-26

申请号：US18733504

申请日：2024-06-04

Applicant: Applied Materials, Inc.

Inventor： Zhiyuan YE ,  Shu-Kwan LAU ,  Brian BURROWS ,  Lori D. WASHINGTON ,  Herman DINIZ ,  Martin A. HILKENE ,  Richard O. COLLINS ,  Nyi Oo MYO ,  Manish HEMKAR ,  Schubert S. CHU

IPC: C30B25/14 ,  C23C16/44 ,  C23C16/455 ,  C30B25/08 ,  C30B25/10 ,  H01L21/67

CPC classification number: C30B25/14 ,  C23C16/4412 ,  C23C16/455 ,  C30B25/105 ,  H01L21/6719 ,  C30B25/08

Abstract: A method and apparatus for a process chamber for thermal processing is described herein. The process chamber is a dual process chamber and shares a chamber body. The chamber body includes a first and a second set of gas inject passages. The chamber body may also include a first and a second set of exhaust ports. The process chamber may have a shared gas panel and/or a shared exhaust conduit.

公开(公告)号：US20220283029A1

公开(公告)日：2022-09-08

申请号：US17630235

申请日：2020-07-08

Applicant: Applied Materials, Inc.

Inventor： Zuoming ZHU ,  Martin A. HILKENE ,  Avinash SHERVEGAR ,  Surendra Singh SRIVASTAVA ,  Ala MORADIAN ,  Shu-Kwan LAU ,  Zhiyuan YE ,  Enle CHOO ,  Flora Fong-Song CHANG ,  Bindusugar MARATH SANKARATHODI ,  Patricia M. LIU ,  Errol Antonio C. SANCHEZ ,  Jenny LIN ,  Nyi O. MYO ,  Schubert S. CHU

IPC: G01J3/443 ,  C23C16/455

Abstract: One or more embodiments herein relate to methods for detection using optical emission spectroscopy. In these embodiments, an optical signal is delivered from the process chamber to an optical emission spectrometer (OES). The OES identifies emission peaks of photons, which corresponds to the optical intensity of radiation from the photons, to determine the concentrations of each of the precursor gases and reaction products. The OES sends input signals of the data results to a controller. The controller can adjust process variables within the process chamber in real time during deposition based on the comparison. In other embodiments, the controller can automatically trigger a process chamber clean based on a comparison of input signals of process chamber residues received before the deposition process and input signals of process chamber residues received after the deposition process.

公开(公告)号：US20210324514A1

公开(公告)日：2021-10-21

申请号：US17218892

申请日：2021-03-31

Applicant: Applied Materials, Inc.

Inventor： Zhiyuan YE ,  Shu-Kwan Danny LAU ,  Brian H. BURROWS ,  Lori WASHINGTON ,  Herman DINIZ ,  Martin A. HILKENE ,  Richard O. COLLINS ,  Nyi O. MYO ,  Manish HEMKAR ,  Schubert S. CHU

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/458 ,  C23C16/48 ,  H01L21/67

Abstract: A method and apparatus for a process chamber for thermal processing is described herein. The process chamber is a dual process chamber and shares a chamber body. The chamber body includes a first and a second set of gas inject passages. The chamber body may also include a first and a second set of exhaust ports. The process chamber may have a shared gas panel and/or a shared exhaust conduit. The process chamber described herein enables for the processing of multiple substrates simultaneously with improved process gas flow and heat distribution.

公开(公告)号：US20180102248A1

公开(公告)日：2018-04-12

申请号：US15831342

申请日：2017-12-04

Applicant: APPLIED MATERIALS, INC.

Inventor： Jun XUE ,  Ludovic GODET ,  Martin A. HILKENE ,  Matthew D. SCOTNEY-CASTLE

IPC: H01L21/02 ,  C23C14/04 ,  H01J37/32 ,  H01L21/033

CPC classification number: H01L21/02527 ,  C23C14/046 ,  H01J37/321 ,  H01J37/32422 ,  H01L21/02274 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02532 ,  H01L21/02631 ,  H01L21/02639 ,  H01L21/033 ,  H01L21/67253

Abstract: Ion species are supplied to a workpiece comprising a pattern layer over a substrate. A material layer is deposited on the pattern layer using an implantation process of the ion species. In one embodiment, the deposited material layer has an etch selectivity to the pattern layer. In one embodiment, a trench is formed on the pattern layer. The trench comprises a bottom and a sidewall. The material layer is deposited into the trench using the ion implantation process. The material layer is deposited on the bottom of the trench in a direction along the sidewall.

公开(公告)号：US20220128425A1

公开(公告)日：2022-04-28

申请号：US17079040

申请日：2020-10-23

Applicant: Applied Materials, Inc.

Inventor： Martin A. HILKENE ,  Surendra Singh SRIVASTAVA

IPC: G01M3/02 ,  H01L21/67

Abstract: Methods and apparatus for detecting a vacuum leak within a processing chamber are described herein. More specifically, the methods and apparatus relate to the utilization of a spectral measurement device, such as a spectral gauge, to determine the leak rate within a process chamber while the process chamber is held at a leak test pressure. The spectral measurement device determines the rate of increase of one or more gases within the processing chamber and can be used to determine if the processing chamber passes or fails the leak test.