公开(公告)号：US20150279974A1

公开(公告)日：2015-10-01

申请号：US14622647

申请日：2015-02-13

Applicant: Applied Materials, Inc.

Inventor： Ludovic GODET ,  Christopher HATEM ,  Matthew D. SCOTNEY-CASTLE ,  Martin A. HILKENE

IPC: H01L29/66 ,  H01L21/306 ,  H01L21/223

CPC classification number: H01L29/66803 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/30 ,  H01L21/30604 ,  H01L21/3065

Abstract: Embodiments of the present invention provide methods for forming fin structure with desired materials using a conversion process for three dimensional (3D) stacking of fin field effect transistor (FinFET) for semiconductor chips. In one embodiment, a method of forming a fin structure on a substrate includes performing an directional plasma process on a fin structure formed from a substrate comprising a first type of atoms, the directional plasma process dopes a second type of atoms on sidewalls of the fin structure, performing a surface modification process to form a surface modified layer on the sidewalls of the fin structure reacting with the first type of atoms, replacing the first type of the atoms with the second type of the atoms in the fin structure during the surface modification process, and forming the fin structure including the second type of the atoms on the substrate.

Abstract translation: 本发明的实施例提供了使用用于半导体芯片的鳍式场效应晶体管（FinFET）的三维（3D）堆叠的转换工艺来形成具有所需材料的鳍结构的方法。 在一个实施例中，在衬底上形成翅片结构的方法包括对由包括第一类型的原子的衬底形成的鳍结构执行定向等离子体处理，所述定向等离子体工艺在鳍的侧壁上掺杂第二类型的原子 结构，进行表面改性处理以在与第一类型的原子反应的翅片结构的侧壁上形成表面改性层，在表面改性期间用翅片结构中的第二类型的原子代替第一类型的原子 处理，并且形成包括基板上的第二类型的原子的翅片结构。