Abstract:
A memory cell is provided that includes a first conductor, a second conductor, a steering element that is capable of providing substantially unidirectional current flow, and a state change element coupled in series with the steering element. The state change element is capable of retaining a programmed state, and the steering element and state change element are vertically aligned with one another. Other aspects are also provided.
Abstract:
A memory cell is provided that includes a first conductor, a second conductor, a steering element that is capable of providing substantially unidirectional current flow, and a state change element coupled in series with the steering element. The state change element is capable of retaining a programmed state, and the steering element and state change element are vertically aligned with one another. Other aspects are also provided.
Abstract:
A calibration circuit (20, 50) and method (60) for calibrating the bias current of a VCO (10, 40) to minimize phase noise. The calibration circuit (20, 50) monitors the average voltage at the common-mode node of the VCO (10, 40) while varying the bias current over a predetermined range. The calibration circuit (20, 50) identifies the bias current associated with the minimum average common-mode voltage and utilizes this bias current for calibrating the biasing transistor of the VCO (10, 40).
Abstract:
A differential diversity antenna is provided. In one embodiment, a differential diversity antenna is used in a wireless system comprising receiver circuitry. (and, in another embodiment, transmission circuitry). The differential diversity antenna comprises a plurality of antenna components that are aligned non-collinearly to achieve diversity. In another embodiment, the differential diversity antenna is used with a second differential diversity antenna. Other embodiments are disclosed, and each of the embodiments can be used alone or together in combination.
Abstract:
A frequency synthesizer (50, 70) including an edge-detection circuit (51, 60) for disabling elements of the frequency synthesizer (50, 70) prior to start-up. The edge-detection circuit detects a transition edge of a reference-clock signal (ref_clk) of the frequency synthesizer (50, 70) and enables elements of the frequency synthesizer (50, 70) upon the detection of the transition edge.
Abstract:
Hetero-structure semiconductor devices having first and second-type semiconductor junctions are disclosed. The hetero-structures are incorporated into pillar and rail-stack memory circuits improving the forward-to-reverse current ratios thereof.
Abstract:
In an automatic phase alignment circuit for a Cartesian feedback amplifier, the phase error is regularly monitored. In various implementations, this approach is used to provide true and continuous phase alignment. Based on a relationship between the up-converted and down-converted signals, another implementation of the invention provides phase-alignment for quadrature-phase components of a baseband signal by arithmetically combining the quadrature-phase components and the feedback components continuously and, in response, continuously phase-adjusting signals in the feed-forward signal path. Another aspect of the present invention is directed to an approach for calculating phase error for that is caused by DC-offset interference which, in turn, manifest at the outputs of many analog functional blocks.
Abstract:
There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive device levels is planarized by chemical mechanical polishing.
Abstract:
In one embodiment, a modular memory device is presented comprising a substrate, a memory array fabricated above the substrate, and first and second circuitry fabricated on the substrate and under the memory array. The first and second circuitry allow the modular memory device to interface with first and second varieties of host devices, respectively. In another embodiment, a modular memory device is presented comprising a substrate, a memory array fabricated above the substrate, memory array support circuitry fabricated on the substrate, and logic circuitry fabricated on the substrate and under the memory array.
Abstract:
Delay locked loop circuitry for generating a predetermined phase relationship between a pair of clocks. A first delay-locked loop includes a delay elements arranged in a chain, the chain receiving an input clock and generating, from each delay element, a set of phase vectors, each shifted a unit delay from the adjacent vector. The first delay-locked loop adjusts the unit delays in the delay chain using a delay adjustment signal so that the phase vectors span a predetermined phase shift of the input clock. A second delay-locked loop selects, from the first delay-locked loop, a pair of phase vectors which brackets the phase of an input clock. A phase interpolator receives the selected pair of vectors and generates an output clock and a delayed output clock, the amount of the delay being controlled by the delay adjustment signal of the first delay-locked loop circuitry. A phase detector compares the delayed output clock with the input clock and adjusts the phase interpolator, based on the phase comparison, so that the phase of the delayed output clock is in phase with the input clock. As a result, there is a predetermined phase relationship between the output clock and the input clock, the phase relationship being the amount of delay between the output clock and the delayed output clock. Different phase relationships between the input and output clock are possible depending on the number of unit delays used in the path of the delayed output clock or the output clock.