公开(公告)号：US09691589B2

公开(公告)日：2017-06-27

申请号：US13293393

申请日：2011-11-10

Applicant: Teunis Van De Peut ,  Marco Jan-Jaco Wieland

Inventor： Teunis Van De Peut ,  Marco Jan-Jaco Wieland

IPC: H01J37/302 ,  H01J37/04 ,  H01J37/317 ,  H01J37/30 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/20

CPC classification number: H01J37/3026 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/70475 ,  G06T1/20 ,  G06T1/60 ,  H01J37/045 ,  H01J37/3002 ,  H01J37/3174 ,  H01J37/3175 ,  H01J37/3177 ,  H01J2237/3175 ,  H01J2237/31761 ,  H01J2237/31764 ,  H04N1/405

Abstract: A method for exposing a wafer using a plurality of charged particle beamlets. The method comprises identifying non-functional beamlets among the beamlets, allocating a first subset of the beamlets for exposing a first portion of the wafer, the first subset excluding the identified non-functional beamlets, performing a first scan for exposing the first portion of the wafer using the first subset of the beamlets, allocating a second subset of the beamlets for exposing a second portion of the wafer, the second subset also excluding the identified non-functional beamlets, and performing a second scan for exposing the second portion of the wafer using the second subset of the beamlets, wherein the first and second portions of the wafer do not overlap and together comprise the complete area of the wafer to be exposed.

公开(公告)号：USRE45049E1

公开(公告)日：2014-07-29

申请号：US13343038

申请日：2012-01-04

Applicant: Marco Jan-Jaco Wieland ,  Bert Jan Kampherbeek ,  Alexander Hendrik Vincent Van Veen ,  Pieter Kruit

Inventor： Marco Jan-Jaco Wieland ,  Bert Jan Kampherbeek ,  Alexander Hendrik Vincent Van Veen ,  Pieter Kruit

IPC: H01J37/30 ,  H01J37/304

CPC classification number: H01J3/02 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/06 ,  H01J37/3177 ,  H01J2237/0435 ,  H01J2237/06308 ,  H01J2237/06375 ,  H01J2237/3045

Abstract: The invention relates to an electron beam exposure apparatus for transferring a pattern onto the surface of a target, comprising: a beamlet generator for generating a plurality of electron beamlets; a modulation array for receiving said plurality of electron beamlets, comprising a plurality of modulators for modulating the intensity of an electron beamlet; a controller, connected to the modulation array for individually controlling the modulators, an adjustor, operationally connected to each modulator, for individually adjusting the control signal of each modulator; a focusing electron optical system comprising an array of electrostatic lenses wherein each lens focuses a corresponding individual beamlet, which is transmitted by said modulation array, to a cross section smaller than 300 nm, and a target holder for holding a target with its exposure surface onto which the pattern is to be transferred in the first focal plane of the focusing electron optical system.

公开(公告)号：US08618496B2

公开(公告)日：2013-12-31

申请号：US13458861

申请日：2012-04-27

Applicant: Marco Jan-Jaco Wieland ,  Stijn Willem Herman Karel Steenbrink ,  Alexander Hendrik Vincent van Veen ,  Alrik van den Brom

Inventor： Marco Jan-Jaco Wieland ,  Stijn Willem Herman Karel Steenbrink ,  Alexander Hendrik Vincent van Veen ,  Alrik van den Brom

IPC: G03B27/54 ,  H01J3/14

CPC classification number: G03F7/70 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/045 ,  H01J37/09 ,  H01J37/12 ,  H01J37/3177 ,  H01J2237/1205

Abstract: A charged particle system such as a multi beam lithography system. A manipulator device manipulates one or more charged particle beams. The manipulator device includes at least one through opening in the plane of the planar substrate for passing at least one charged particle. Each through opening is provided with electrodes arranged in a first set of multiple first electrodes along a first part of a perimeter of the through opening and in a second set of multiple second electrodes along a second part of the perimeter. An electronic control circuit is arranged for providing voltage differences the electrodes in dependence of a position of the first and second electrode along the perimeter of the through opening.

Abstract translation: 带电粒子系统，如多光束光刻系统。 操纵器装置操纵一个或多个带电粒子束。 所述操纵器装置包括在所述平面基板的平面中的至少一个通孔，用于使至少一个带电粒子通过。 每个通孔具有沿着通孔的周边的第一部分和沿着周边的第二部分的第二组多个第二电极中布置在第一组多个第一电极中的电极。 电子控制电路被布置用于根据第一和第二电极沿着通孔的周边的位置来提供电极的电压差。

公开(公告)号：US20120287410A1

公开(公告)日：2012-11-15

申请号：US13290139

申请日：2011-11-07

Applicant: Marco Jan-Jaco Wieland ,  Teunis Van De Peut ,  Floris Pepijn Van Der Wilt ,  Ernst Habekotte

Inventor： Marco Jan-Jaco Wieland ,  Teunis Van De Peut ,  Floris Pepijn Van Der Wilt ,  Ernst Habekotte

IPC: G03B27/00 ,  G06F3/12 ,  H04Q11/00

CPC classification number: H01J37/3177 ,  B82Y10/00 ,  B82Y40/00 ,  H01J2237/31762 ,  H01J2237/31774

Abstract: The invention relates to a maskless lithography system for patterning a target using a plurality of charged particle beamlets. The system comprises an electron optical column including a blanker array for modulating the beamlets. The blanker array includes receivers for receiving data signals and blanker elements for modulating the beamlets in accordance with the data signals. The system further comprises a data path comprising a preprocessing system for processing pattern data and a plurality of transmission channels for transmitting processed pattern data to the blanker elements. The data path further comprises a pattern streaming system for receiving pattern data and generating data signals. First and second channel selectors connect a subset of selected transmission channels for pattern data transmission. The first channel selector is connected between the preprocessing system and the transmission channels. The second channel selector is connected between the channels and the blanker elements.

Abstract translation: 本发明涉及一种用于使用多个带电粒子子束来图案化靶的无掩模光刻系统。 该系统包括电子光学柱，其包括用于调制子束的阻挡阵列。 消隐器阵列包括用于接收数据信号的接收器和用于根据数据信号调制子束的消隐元件。 该系统还包括数据路径，该数据路径包括用于处理模式数据的预处理系统和用于将处理后的图案数据发送到消隐元件的多个传输通道。 数据路径还包括用于接收模式数据和产生数据信号的模式流传输系统。 第一和第二信道选择器连接用于模式数据传输的所选传输信道的子集。 第一通道选择器连接在预处理系统和传输通道之间。 第二通道选择器连接在通道和消声器元件之间。

公开(公告)号：US20120286168A1

公开(公告)日：2012-11-15

申请号：US13290141

申请日：2011-11-07

Applicant: Henk Derks ,  Marco Jan-Jaco Wieland ,  Teunis Van De Peut

Inventor： Henk Derks ,  Marco Jan-Jaco Wieland ,  Teunis Van De Peut

IPC: G06F11/20 ,  G21K5/04

CPC classification number: H01J37/3177 ,  B82Y10/00 ,  B82Y40/00 ,  H01J2237/31754 ,  H01J2237/31762 ,  H01J2237/31793

Abstract: A maskless charged particle lithography system comprises an electron-optical column and a data path. The column includes a blanker array including blanker elements. The data path comprises a preprocessing system, transmission channels, and a pattern streaming system. The lithography system is configured for exposing a target field in two passes by allocating a first beamlet subset for exposing a first field subset during a first pass and a second beamlet subset for exposing a second field subset during a second pass. A first beam selector selects a first pattern data subset containing exposure data for the first beamlet subset and a second pattern data subset containing exposure data for the second beamlet subset. Second beam selectors connect transmission channels assigned for transmitting the first pattern data subset to a first blanker elements subset, and transmission channels assigned for transmitting the second pattern data subset to a second blanker elements subset.

Abstract translation: 无掩模带电粒子光刻系统包括电子 - 光学柱和数据路径。 该列包括一个包含消隐元素的消隐数组。 数据路径包括预处理系统，传输信道和模式流传输系统。 光刻系统被配置为通过在第一次通过期间分配用于暴露第一场子集的第一子束子集和用于在第二遍期间暴露第二场子集的第二子束子集来分两次通过中的目标场曝光。 第一光束选择器选择包含第一子束子集的曝光数据的第一图案数据子集和包含第二子束子集的曝光数据的第二图案数据子集。 第二光束选择器将分配用于发射第一图案数据子集的传输通道连接到第一消隐元素子集，以及分配用于将第二图案数据子集发送到第二消隐元素子集的传输信道。

公开(公告)号：US20120273690A1

公开(公告)日：2012-11-01

申请号：US13458861

申请日：2012-04-27

Applicant: Marco Jan Jaco Wieland ,  Stijn Willem Herman Karel Steenbrink ,  Alexander Hendrik Vincent van Veen ,  Alrik van den Brom

Inventor： Marco Jan Jaco Wieland ,  Stijn Willem Herman Karel Steenbrink ,  Alexander Hendrik Vincent van Veen ,  Alrik van den Brom

IPC: G21K5/04 ,  H01J3/26 ,  H01J3/14

CPC classification number: G03F7/70 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/045 ,  H01J37/09 ,  H01J37/12 ,  H01J37/3177 ,  H01J2237/1205

Abstract: The invention relates to a charged particle system such as a multi beam lithography system, comprising a manipulator device for manipulation of one or more charged particle beams, wherein the manipulator device comprises at least one through opening in the plane of the planar substrate for passing at least one charged particle beam there through. Each through opening is provided with electrodes arranged in a first set of multiple first electrodes along a first part of a perimeter of said through opening and in a second set of multiple second electrodes along a second part of said perimeter. An electronic control circuit is arranged for providing voltage differences the electrodes in dependence of a position of the first and second electrode along the perimeter of the through opening.

Abstract translation: 本发明涉及带电粒子系统，例如多光束光刻系统，其包括用于操纵一个或多个带电粒子束的操纵器装置，其中所述操纵器装置包括在所述平面基板的平面中的至少一个通孔，用于通过 至少一个带电粒子束通过。 每个通孔具有沿着所述通孔的周边的第一部分布置在第一组多个第一电极中的电极和沿着所述周边的第二部分的第二组多个第二电极。 电子控制电路被布置用于根据第一和第二电极沿着通孔的周边的位置来提供电极的电压差。

公开(公告)号：US08258484B2

公开(公告)日：2012-09-04

申请号：US12905131

申请日：2010-10-15

Applicant: Marco Jan Jaco Wieland ,  Alexander Hendrik Vincent Van Veen

Inventor： Marco Jan Jaco Wieland ,  Alexander Hendrik Vincent Van Veen

IPC: H01J37/147 ,  H01J37/244 ,  H01J3/26 ,  G01J1/42

CPC classification number: H01J37/3177 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/045 ,  H01J2237/0437 ,  H01J2237/0492 ,  H01J2237/1504 ,  H01J2237/2485 ,  H01J2237/31762

Abstract: The invention relates to a charged particle multi-beamlet lithography system for exposing a target using a plurality of beamlets. The system has a beam generator, a beamlet blanker, and a beamlet projector. The beam generator is configured to generate a plurality of charged particle beamlets. The beamlet blanker is configured to pattern the beamlets. The beamlet projector is configured to project the patterned beamlets onto the target surface. The system further has a deflection device. The deflection device has a plurality of memory cells. Each memory cell is provided with a storage element and is connected to a switching electrode of a deflector.

Abstract translation: 本发明涉及一种用于使用多个子束曝光靶的带电粒子多子束光刻系统。 该系统具有光束发生器，子束遮挡器和小射束投影仪。 束发生器被配置为产生多个带电粒子子束。 子束消除器被配置为对子束进行图案化。 子束投影仪被配置为将图案化的子束投影到目标表面上。 该系统还具有偏转装置。 偏转装置具有多个存储单元。 每个存储单元设置有存储元件，并连接到偏转器的开关电极。

公开(公告)号：US08242470B2

公开(公告)日：2012-08-14

申请号：US11653107

申请日：2007-01-11

Applicant: Marco Jan-Jaco Wieland ,  Johannes Christiaan van 't Spijker ,  Remco Jager ,  Pieter Kruit

Inventor： Marco Jan-Jaco Wieland ,  Johannes Christiaan van 't Spijker ,  Remco Jager ,  Pieter Kruit

IPC: G21K5/10 ,  G03B27/42 ,  G03B27/54

CPC classification number: G03F7/70383 ,  B82Y10/00 ,  B82Y40/00 ,  G03B27/52 ,  G03F7/70291 ,  G03F7/70508 ,  G03F7/70825 ,  G03F7/70991 ,  H01J37/045 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2237/0432 ,  H01J2237/0435 ,  H01J2237/0437 ,  H01J2237/2482

Abstract: A maskless lithography system for transferring a pattern onto the surface of a target. At least one beam generator for generating a plurality of beamlets. A plurality of modulators modulate the magnitude of a beamlet, and a control unit controls of the modulators. The control unit generates and delivers pattern data to the modulators for controlling the magnitude of each individual beamlet. The control unit includes at least one data storage for storing the pattern data, at least one readout unit for reading out the data from the data storage, at least one data converter for converting the data that is read out from the data storage into at least one modulated light beam, and at least one optical transmitter for transmitting the at least one modulated light beam to the modulation modulators.

Abstract translation: 一种用于将图案转印到目标表面上的无掩模光刻系统。 用于产生多个子束的至少一个光束发生器。 多个调制器调制小波束的幅度，并且控制单元控制调制器。 控制单元生成并将模式数据传送到调制器，以控制每个单独子束的幅度。 控制单元包括用于存储图案数据的至少一个数据存储器，用于从数据存储器读出数据的至少一个读出单元，至少一个数据转换器，用于将从数据存储器读出的数据转换为至少 一个调制光束和至少一个用于将至少一个调制光束发射到调制调制器的光发射器。

公开(公告)号：US08242467B2

公开(公告)日：2012-08-14

申请号：US12728965

申请日：2010-03-22

Applicant: Remco Jager ,  Aukje Arianne Annette Kastelijn ,  Guido de Boer ,  Marco Jan Jaco Wieland ,  Stijn Willem Karel Herman Steenbrink

Inventor： Remco Jager ,  Aukje Arianne Annette Kastelijn ,  Guido de Boer ,  Marco Jan Jaco Wieland ,  Stijn Willem Karel Herman Steenbrink

IPC: G21K5/04

CPC classification number: G03F7/70291 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/31777

Abstract: The inventions relates to a lithography system in which an electronic image pattern is delivered to a exposure tool for projecting an image to a target surface, said exposure tool comprising a control unit for controlling exposure projections, said control unit at least partly being included in the projection space of the said exposure tool, and being provided with control data by means of light signals, said light signals being coupled in to said control unit by using a free space optical interconnect comprising modulated light beams that are emitted to a light sensitive part of said control unit, wherein the modulated light beams are coupled in to said light sensitive part using a holed mirror for on axis incidence of said light beams on said light sensitive part, the hole or, alternatively, holes of said mirror being provided for passage of said exposure projections.

Abstract translation: 本发明涉及一种光刻系统，其中电子图像图案被传送到用于将图像投影到目标表面的曝光工具，所述曝光工具包括用于控制曝光投影的控制单元，所述控制单元至少部分地包括在 所述曝光工具的投影空间，并且通过光信号提供控制数据，所述光信号通过使用自由空间光学互连而耦合到所述控制单元，所述自由空间光学互连包括发射到光敏部分的光敏部分的调制光束 所述控制单元，其中所述调制光束使用用于所述光束在所述光敏部分上的轴入射的孔眼耦合到所述光敏部分，所述孔或者所述反射镜的孔可选地用于通过 曝光预测

公开(公告)号：US20120091358A1

公开(公告)日：2012-04-19

申请号：US12905126

申请日：2010-10-15

Applicant: Marco Jan Jaco WIELAND ,  Alexander Hendrik Vincent VAN VEEN

Inventor： Marco Jan Jaco WIELAND ,  Alexander Hendrik Vincent VAN VEEN

IPC: G21K1/08

CPC classification number: H01J37/10 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/147 ,  H01J37/1471 ,  H01J37/1478 ,  H01J37/30 ,  H01J37/3007 ,  H01J37/3177 ,  H01J2237/0437 ,  H01J2237/0492

Abstract: The invention relates to a charged particle multi-beamlet system for exposing a target using a plurality of beamlets. The system has a charged particle source, an aperture array, a beamlet manipulator, a beamlet blanker, and an array of projection lens systems. The charged particle source is configured to generate a charged particle beam. The aperture array is configured to define separate beamlets from the generated beam. The beamlet manipulator is configured to converge groups of the beamlets towards a common point of convergence for each group. The beamlet blanker is configured to controllably blank beamlets in the groups of beamlets. Finally, the array of projection lens systems is configured to project unblanked beamlets of the groups of beamlets on to the surface of the target. The beamlet manipulator is further adapted to converge each of the groups of beamlets towards a point corresponding to one of the projection lens systems.

Abstract translation: 本发明涉及一种用于使用多个子束曝光目标的带电粒子多子束系统。 该系统具有带电粒子源，孔径阵列，子束操纵器，子束消除器和投影透镜系统阵列。 带电粒子源被配置为产生带电粒子束。 孔径阵列被配置为从所产生的光束定义单独的子束。 子束操纵器被配置为将每个子束的组合朝向每个组的公共收敛点收敛。 子束消除器被配置为可控地遮挡子束组中的子束。 最后，投影透镜系统的阵列被配置成将子束组的未平坦的子束投影到目标的表面上。 子束操纵器还适于将每个子束组朝向对应于投影透镜系统中的一个的点聚焦。