公开(公告)号：US09105439B2

公开(公告)日：2015-08-11

申请号：US13304427

申请日：2011-11-25

Applicant: Marco Jan Jaco Wieland ,  Bert Jan Kampherbeek ,  Alexander Hendrik Van Veen ,  Pieter Kruit ,  Stijn Willem Steenbrink

Inventor： Marco Jan Jaco Wieland ,  Bert Jan Kampherbeek ,  Alexander Hendrik Van Veen ,  Pieter Kruit ,  Stijn Willem Steenbrink

IPC: H01J37/317 ,  H01J37/12 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/30

CPC classification number: H01J37/12 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3007 ,  H01J37/3177 ,  H01J2237/0435 ,  H01J2237/1205 ,  H01J2237/121 ,  H01J2237/151

Abstract: The invention relates to a charged particle optical system comprising a beamlet generator for generating a plurality of charged particle beamlets, an electrostatic deflection system for deflecting the beamlets, and a projection lens system for directing the beamlets from the beamlet generator towards the target. The electrostatic deflection system comprises a first electrostatic deflector and a second electrostatic deflector for scanning charged particle beamlets over the target. The second electrostatic deflector is located behind the first electrostatic deflector so that, during operation of the system, a beamlet generated by the beamlet generator passes both of the electrostatic deflectors. During operation of the first and second electrostatic deflectors the system is adapted to apply voltages on the first electrostatic deflector and the second electrostatic deflector of opposite sign.

Abstract translation: 本发明涉及一种带电粒子光学系统，其包括用于产生多个带电粒子子束的子束发生器，用于偏转子束的静电偏转系统，以及用于将子束从小波发生器引导到目标的投影透镜系统。 静电偏转系统包括用于在靶上扫描带电粒子束的第一静电偏转器和第二静电偏转器。 第二静电偏转器位于第一静电偏转器的后面，使得在系统操作期间，由小梁发生器产生的子束通过两个静电偏转器。 在第一和第二静电偏转器的操作期间，系统适于在第一静电偏转器和相反符号的第二静电偏转器上施加电压。

公开(公告)号：US08089056B2

公开(公告)日：2012-01-03

申请号：US12393049

申请日：2009-02-26

Applicant: Marco Jan Jaco Wieland ,  Bert Jan Kampherbeek ,  Alexander Hendrik Van Veen ,  Pieter Kruit ,  Stijn Willem Herman Karel Steenbrink

Inventor： Marco Jan Jaco Wieland ,  Bert Jan Kampherbeek ,  Alexander Hendrik Van Veen ,  Pieter Kruit ,  Stijn Willem Herman Karel Steenbrink

IPC: H01J37/12 ,  H01J37/30

CPC classification number: H01J37/12 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3007 ,  H01J37/3177 ,  H01J2237/0435 ,  H01J2237/1205 ,  H01J2237/121 ,  H01J2237/151

Abstract: A charged particle multi-beamlet system for exposing a target using a plurality of beamlets. The system comprises a first plate having a plurality of holes formed in it, with a plurality of electrostatic projection lens systems formed at the location of each hole so that each electron beamlet passes through a corresponding projection lens system. The holes have sufficiently uniform placement and dimensions to enable focusing of the beamlets onto the surface of the target using a common control voltage. Preferably the electrostatic projection lens systems are controlled by a common electrical signal to focus the electron beamlets on the surface without correction of the focus or path of individual electron beamlets.

Abstract translation: 一种用于使用多个子束曝光目标的带电粒子多子束系统。 该系统包括在其中形成有多个孔的第一板，形成在每个孔的位置处的多个静电投影透镜系统，使得每个电子束通过相应的投影透镜系统。 这些孔具有足够均匀的放置和尺寸以使得能够使用公共控制电压将子束聚焦到靶的表面上。 优选地，静电投影透镜系统由公共电信号控制，以将电子束聚焦在表面上，而无需校正各个电子束的聚焦或路径。

公开(公告)号：US20090212229A1

公开(公告)日：2009-08-27

申请号：US12393049

申请日：2009-02-26

Applicant: Marco Jan Jaco WIELAND ,  Bert Jan KAMPHERBEEK ,  Alexander Hendrik VAN VEEN ,  Pieter KRUIT ,  Stijn Willem Herman Karel STEENBRINK

Inventor： Marco Jan Jaco WIELAND ,  Bert Jan KAMPHERBEEK ,  Alexander Hendrik VAN VEEN ,  Pieter KRUIT ,  Stijn Willem Herman Karel STEENBRINK

IPC: H01J3/14 ,  G01J1/00 ,  A61N5/00

CPC classification number: H01J37/12 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3007 ,  H01J37/3177 ,  H01J2237/0435 ,  H01J2237/1205 ,  H01J2237/121 ,  H01J2237/151

Abstract: A charged particle multi-beamlet system for exposing a target using a plurality of beamlets. The system comprises a first plate having a plurality of holes formed in it, with a plurality of electrostatic projection lens systems formed at the location of each hole so that each electron beamlet passes through a corresponding projection lens system. The holes have sufficiently uniform placement and dimensions to enable focusing of the beamlets onto the surface of the target using a common control voltage. Preferably the electrostatic projection lens systems are controlled by a common electrical signal to focus the electron beamlets on the surface without correction of the focus or path of individual electron beamlets.

Abstract translation: 一种用于使用多个子束曝光目标的带电粒子多子束系统。 该系统包括在其中形成有多个孔的第一板，形成在每个孔的位置处的多个静电投影透镜系统，使得每个电子束通过相应的投影透镜系统。 这些孔具有足够均匀的放置和尺寸以使得能够使用公共控制电压将子束聚焦到靶的表面上。 优选地，静电投影透镜系统由公共电信号控制，以将电子束聚焦在表面上，而无需校正各个电子束的聚焦或路径。

公开(公告)号：US06897458B2

公开(公告)日：2005-05-24

申请号：US10699246

申请日：2003-10-30

Applicant: Marco Jan-Jaco Wieland ,  Bert Jan Kampherbeek ,  Alexander Hendrik Vincent van Veen ,  Pieter Kruit

Inventor： Marco Jan-Jaco Wieland ,  Bert Jan Kampherbeek ,  Alexander Hendrik Vincent van Veen ,  Pieter Kruit

IPC: A61N5/00 ,  G01Q30/02 ,  G01Q30/08 ,  G03B1/00 ,  H01J37/08 ,  H01J37/30 ,  H01J37/304 ,  H01J37/317

CPC classification number: H01J3/02 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/06 ,  H01J37/3177 ,  H01J2237/0435 ,  H01J2237/06308 ,  H01J2237/06375 ,  H01J2237/3045

Abstract: The invention relates to an electron beam exposure apparatus for transferring a pattern onto the surface of a target, comprising: a beamlet generator for generating a plurality of electron beamlets; a modulation array for receiving said plurality of electron beamlets, comprising a plurality of modulators for modulating the intensity of an electron beamlet; a controller, connected to the modulation array for individually controlling the modulators, an adjustor, operationally connected to each modulator, for individually adjusting the control signal of each modulator; a focusing electron optimal system comprising an array of electrostatic lenses wherein each lens focuses a corresponding individual beamlet, which is transmitted by said modulation array, to a cross section smaller than 300 nm, and a target holder for holding a target with its exposure surface onto which the pattern is to be transferred in the first focal plane of the focusing electron optical system.

Abstract translation: 本发明涉及一种用于将图案转印到目标表面上的电子束曝光装置，包括：用于产生多个电子束的小波发生器; 用于接收所述多个电子子束的调制阵列，包括用于调制电子束的强度的多个调制器; 连接到用于单独控制调制器的调制阵列的控制器，可操作地连接到每个调制器的调节器，用于单独调整每个调制器的控制信号; 聚焦电子最优系统，其包括静电透镜阵列，其中每个透镜将由所述调制阵列传输的相应单独的子束聚焦到小于300nm的横截面，以及用于将其曝光表面保持在其上的目标保持器 其图案将在聚焦电子光学系统的第一焦平面中转印。

公开(公告)号：USRE44240E1

公开(公告)日：2013-05-28

申请号：US12189817

申请日：2008-08-12

Applicant: Marco Jan-Jaco Wieland ,  Bert Jan Kampherbeek ,  Alexander Hendrik Vincent Van Veen ,  Pieter Kruit

Inventor： Marco Jan-Jaco Wieland ,  Bert Jan Kampherbeek ,  Alexander Hendrik Vincent Van Veen ,  Pieter Kruit

IPC: H01J37/30 ,  H01J37/304

CPC classification number: H01J3/02 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/06 ,  H01J37/3177 ,  H01J2237/0435 ,  H01J2237/06308 ,  H01J2237/06375 ,  H01J2237/3045

Abstract: The invention relates to an electron beam exposure apparatus for transferring a pattern onto the surface of a target, comprising: a beamlet generator for generating a plurality of electron beamlets; a modulation array for receiving said plurality of electron beamlets, comprising a plurality of modulators for modulating the intensity of an electron beamlet; a controller, connected to the modulation array for individually controlling the modulators, an adjustor, operationally connected to each modulator, for individually adjusting the control signal of each modulator; a focusing electron optical system comprising an array of electrostatic lenses wherein each lens focuses a corresponding individual beamlet, which is transmitted by said modulation array, to a cross section smaller than 300 nm, and a target holder for holding a target with its exposure surface onto which the pattern is to be transferred in the first focal plane of the focusing electron optical system.

Abstract translation: 本发明涉及一种用于将图案转印到目标表面上的电子束曝光装置，包括：用于产生多个电子束的小波发生器; 用于接收所述多个电子子束的调制阵列，包括用于调制电子束的强度的多个调制器; 连接到用于单独控制调制器的调制阵列的控制器，可操作地连接到每个调制器的调节器，用于单独调整每个调制器的控制信号; 一种聚焦电子光学系统，包括静电透镜阵列，其中每个透镜将由所述调制阵列传输的相应单独的子束聚焦成小于300nm的横截面，以及用于将其曝光表面保持在其上的靶保持器 其图案将在聚焦电子光学系统的第一焦平面中转印。

公开(公告)号：US06844560B2

公开(公告)日：2005-01-18

申请号：US10218223

申请日：2002-08-13

Applicant: Marco Wieland ,  Bert Jan Kampherbeek ,  Pieter Kruit

Inventor： Marco Wieland ,  Bert Jan Kampherbeek ,  Pieter Kruit

IPC: G03F7/20 ,  H01J37/073 ,  H01J37/317 ,  H01J37/00

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  G03F7/70375 ,  H01J37/073 ,  H01J37/3177 ,  H01J2237/028 ,  H01J2237/31779 ,  H01J2237/31796

Abstract: A lithography system comprising a converter element (7) for receiving light and converting said light in a plurality of electron beams (15) to be directed towards and focused on a substrate (10) to be processed, said plurality of electron beams (15) being used to define a pattern in a resist layer (20) on said substrate (10), wherein said lithography system is provided with a protective foil with holes at the positions of the electron beams (23) being arranged to protect, in use, said converter element (7) from contamination with material from the resist layer (21).

Abstract translation: 一种光刻系统，包括用于接收光的转换元件（7），并将多个电子束（15）中的所述光转换成指向并聚焦在待处理的基板（10）上，所述多个电子束（15） 用于在所述基板（10）上的抗蚀剂层（20）中限定图案，其中所述光刻系统设置有在电子束（23）的位置处具有孔的保护箔， 所述转换器元件（7）不受来自抗蚀剂层（21）的材料的污染。

公开(公告)号：USRE45049E1

公开(公告)日：2014-07-29

申请号：US13343038

申请日：2012-01-04

Applicant: Marco Jan-Jaco Wieland ,  Bert Jan Kampherbeek ,  Alexander Hendrik Vincent Van Veen ,  Pieter Kruit

Inventor： Marco Jan-Jaco Wieland ,  Bert Jan Kampherbeek ,  Alexander Hendrik Vincent Van Veen ,  Pieter Kruit

IPC: H01J37/30 ,  H01J37/304

CPC classification number: H01J3/02 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/06 ,  H01J37/3177 ,  H01J2237/0435 ,  H01J2237/06308 ,  H01J2237/06375 ,  H01J2237/3045

Abstract: The invention relates to an electron beam exposure apparatus for transferring a pattern onto the surface of a target, comprising: a beamlet generator for generating a plurality of electron beamlets; a modulation array for receiving said plurality of electron beamlets, comprising a plurality of modulators for modulating the intensity of an electron beamlet; a controller, connected to the modulation array for individually controlling the modulators, an adjustor, operationally connected to each modulator, for individually adjusting the control signal of each modulator; a focusing electron optical system comprising an array of electrostatic lenses wherein each lens focuses a corresponding individual beamlet, which is transmitted by said modulation array, to a cross section smaller than 300 nm, and a target holder for holding a target with its exposure surface onto which the pattern is to be transferred in the first focal plane of the focusing electron optical system.

公开(公告)号：US07091504B2

公开(公告)日：2006-08-15

申请号：US11128512

申请日：2005-05-12

Applicant: Marco Jan-Jaco Wieland ,  Bert Jan Kampherbeek ,  Alexander Hendrik Vincent van Veen ,  Pieter Kruit

Inventor： Marco Jan-Jaco Wieland ,  Bert Jan Kampherbeek ,  Alexander Hendrik Vincent van Veen ,  Pieter Kruit

IPC: H01J37/30 ,  H01J37/304

CPC classification number: H01J3/02 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/06 ,  H01J37/3177 ,  H01J2237/0435 ,  H01J2237/06308 ,  H01J2237/06375 ,  H01J2237/3045

Abstract: The invention relates to an electron beam exposure apparatus for transferring a pattern onto the surface of a target, comprising: a beamlet generator for generating a plurality of electron beamlets; a modulation array for receiving said plurality of electron beamlets, comprising a plurality of modulators for modulating the intensity of an electron beamlet; a controller, connected to the modulation array for individually controlling the modulators, an adjustor, operationally connected to each modulator, for individually adjusting the control signal of each modulator; a focusing electron optical system comprising an array of electrostatic lenses wherein each lens focuses a corresponding individual beamlet, which is transmitted by said modulation array, to a cross section smaller than 300 nm, and a target holder for holding a target with its exposure surface onto which the pattern is to be transferred in the first focal plane of the focusing electron optical system.

公开(公告)号：USRE44908E1

公开(公告)日：2014-05-27

申请号：US13343036

申请日：2012-01-04

Applicant: Marco Jan-Jaco Wieland ,  Bert Jan Kampherbeek ,  Alexander Hendrik Vincent Van Veen ,  Pieter Kruit

Inventor： Marco Jan-Jaco Wieland ,  Bert Jan Kampherbeek ,  Alexander Hendrik Vincent Van Veen ,  Pieter Kruit

IPC: H01J37/30 ,  H01J37/304 ,  H01J37/06

CPC classification number: H01J3/02 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/06 ,  H01J37/3177 ,  H01J2237/0435 ,  H01J2237/06308 ,  H01J2237/06375 ,  H01J2237/3045

Abstract: The invention relates to an electron beam exposure apparatus for transferring a pattern onto the surface of a target, comprising: a beamlet generator for generating a plurality of electron beamlets; a modulation array for receiving said plurality of electron beamlets, comprising a plurality of modulators for modulating the intensity of an electron beamlet; a controller, connected to the modulation array for individually controlling the modulators, an adjustor, operationally connected to each modulator, for individually adjusting the control signal of each modulator; a focusing electron optical system comprising an array of electrostatic lenses wherein each lens focuses a corresponding individual beamlet, which is transmitted by said modulation array, to a cross section smaller than 300 nm, and a target holder for holding a target with its exposure surface onto which the pattern is to be transferred in the first focal plane of the focusing electron optical system.

Abstract translation: 本发明涉及一种用于将图案转印到目标表面上的电子束曝光装置，包括：用于产生多个电子束的小波发生器; 用于接收所述多个电子子束的调制阵列，包括用于调制电子束的强度的多个调制器; 连接到用于单独控制调制器的调制阵列的控制器，可操作地连接到每个调制器的调节器，用于单独调整每个调制器的控制信号; 一种聚焦电子光学系统，包括静电透镜阵列，其中每个透镜将由所述调制阵列传输的相应单独的子束聚焦成小于300nm的横截面，以及用于将其曝光表面保持在其上的靶保持器 其图案将在聚焦电子光学系统的第一焦平面中转印。

公开(公告)号：US20120061583A1

公开(公告)日：2012-03-15

申请号：US13304427

申请日：2011-11-25

Applicant: Marco Jan Jaco WIELAND ,  Bert Jan KAMPHERBEEK ,  Alexander Hendrik VAN VEEN ,  Pieter KRUIT ,  Stijn Willem Herman Karel STEENBRINK

Inventor： Marco Jan Jaco WIELAND ,  Bert Jan KAMPHERBEEK ,  Alexander Hendrik VAN VEEN ,  Pieter KRUIT ,  Stijn Willem Herman Karel STEENBRINK

IPC: H01J3/26 ,  H01J3/14

CPC classification number: H01J37/12 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3007 ,  H01J37/3177 ,  H01J2237/0435 ,  H01J2237/1205 ,  H01J2237/121 ,  H01J2237/151

Abstract: The invention relates to a charged particle optical system comprising a beamlet generator for generating a plurality of charged particle beamlets, an electrostatic deflection system for deflecting the beamlets, and a projection lens system for directing the beamlets from the beamlet generator towards the target. The electrostatic deflection system comprises a first electrostatic deflector and a second electrostatic deflector for scanning charged particle beamlets over the target. The second electrostatic deflector is located behind the first electrostatic deflector so that, during operation of the system, a beamlet generated by the beamlet generator passes both of the electrostatic deflectors. During operation of the first and second electrostatic deflectors the system is adapted to apply voltages on the first electrostatic deflector and the second electrostatic deflector of opposite sign.

Abstract translation: 本发明涉及一种带电粒子光学系统，其包括用于产生多个带电粒子子束的子束发生器，用于偏转子束的静电偏转系统，以及用于将子束从小波发生器引导到目标的投影透镜系统。 静电偏转系统包括用于在靶上扫描带电粒子束的第一静电偏转器和第二静电偏转器。 第二静电偏转器位于第一静电偏转器的后面，使得在系统操作期间，由小梁发生器产生的子束通过两个静电偏转器。 在第一和第二静电偏转器的操作期间，系统适于在第一静电偏转器和相反符号的第二静电偏转器上施加电压。