公开(公告)号：US20140014745A1

公开(公告)日：2014-01-16

申请号：US13937815

申请日：2013-07-09

申请人： Brian H. BURROWS ,  Alexander TAM ,  Ronald STEVENS ,  Kenric T. CHOI ,  James David FELSCH ,  Jacob GRAYSON ,  Sumedh ACHARYA ,  Sandeep NIJHAWAN ,  Lori D. WASHINGTON ,  Nyi O. MYO

发明人： Brian H. BURROWS ,  Alexander TAM ,  Ronald STEVENS ,  Kenric T. CHOI ,  James David FELSCH ,  Jacob GRAYSON ,  Sumedh ACHARYA ,  Sandeep NIJHAWAN ,  Lori D. WASHINGTON ,  Nyi O. MYO

IPC分类号： C23C16/455

CPC分类号： C23C16/45565 ,  C23C16/45514 ,  C23C16/45519 ,  C23C16/45574 ,  C23C16/45578 ,  C30B25/14 ,  C30B29/403 ,  Y10T137/0318 ,  Y10T137/87153

摘要： A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, a metal organic chemical vapor deposition (MOCVD) process is used to deposit a Group III-nitride film on a plurality of substrates. A Group III precursor, such as trimethyl gallium, trimethyl aluminum or trimethyl indium and a nitrogen-containing precursor, such as ammonia, are delivered to a plurality of straight channels which isolate the precursor gases. The precursor gases are injected into mixing channels where the gases are mixed before entering a processing volume containing the substrates. Heat exchanging channels are provided for temperature control of the mixing channels to prevent undesirable condensation and reaction of the precursors.

摘要翻译： 提供了可用于化学气相沉积和/或氢化物气相外延（HVPE）沉积的方法和装置。 在一个实施例中，使用金属有机化学气相沉积（MOCVD）工艺在多个基板上沉积III族氮化物膜。 将III族前体，例如三甲基镓，三甲基铝或三甲基铟，以及含氮前体，例如氨，被输送到多个分离前体气体的直通道。 将前体气体注入到混合通道中，在混合通道中气体被混合，然后进入含有底物的处理体积。 提供热交换通道用于混合通道的温度控制，以防止不希望的前体的冷凝和反应。

公开(公告)号：US08481118B2

公开(公告)日：2013-07-09

申请号：US13181431

申请日：2011-07-12

申请人： Brian H. Burrows ,  Alexander Tam ,  Ronald Stevens ,  Kenric T. Choi ,  James D. Felsch ,  Jacob Grayson ,  Sumedh Acharya ,  Sandeep Nijhawan ,  Lori D. Washington ,  Nyi O. Myo

发明人： Brian H. Burrows ,  Alexander Tam ,  Ronald Stevens ,  Kenric T. Choi ,  James D. Felsch ,  Jacob Grayson ,  Sumedh Acharya ,  Sandeep Nijhawan ,  Lori D. Washington ,  Nyi O. Myo

IPC分类号： C23C16/00 ,  C23C16/06 ,  C23C16/08 ,  C23C16/455

CPC分类号： C23C16/45565 ,  C23C16/45514 ,  C23C16/45519 ,  C23C16/45574 ,  C23C16/45578 ,  C30B25/14 ,  C30B29/403 ,  Y10T137/0318 ,  Y10T137/87153

摘要： A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, a metal organic chemical vapor deposition (MOCVD) process is used to deposit a Group III-nitride film on a plurality of substrates. A Group III precursor, such as trimethyl gallium, trimethyl aluminum or trimethyl indium and a nitrogen-containing precursor, such as ammonia, are delivered to a plurality of straight channels which isolate the precursor gases. The precursor gases are injected into mixing channels where the gases are mixed before entering a processing volume containing the substrates. Heat exchanging channels are provided for temperature control of the mixing channels to prevent undesirable condensation and reaction of the precursors.

摘要翻译： 提供了可用于化学气相沉积和/或氢化物气相外延（HVPE）沉积的方法和装置。 在一个实施例中，使用金属有机化学气相沉积（MOCVD）工艺在多个基板上沉积III族氮化物膜。 将III族前体，例如三甲基镓，三甲基铝或三甲基铟，以及含氮前体，例如氨，被输送到多个分离前体气体的直通道。 将前体气体注入到混合通道中，在混合通道中气体被混合，然后进入含有底物的处理体积。 提供热交换通道用于混合通道的温度控制，以防止不希望的前体的冷凝和反应。

公开(公告)号：US20110217150A1

公开(公告)日：2011-09-08

申请号：US12962527

申请日：2010-12-07

申请人： Toru Takehara ,  Philip Alexander Tam ,  Tatsushi Takahara

发明人： Toru Takehara ,  Philip Alexander Tam ,  Tatsushi Takahara

IPC分类号： B65G67/00 ,  B65G67/02

CPC分类号： B65G67/00 ,  B65G67/02

摘要： A container storage yard transportation system comprises a container storage yard having at least one container stacking area, at least one container handling cart delivery lane disposed alongside the container storage area, a container handling cart return lane associated with the delivery lane, a plurality of container handling carts disposed in the delivery and return lanes, gate handling equipment for transferring containers from ground transportation vehicles to handling carts in a loading position in the delivery lane such that the containers 1 an be transported to the container stacking area on the handling carts via the delivery lane, one or more yard gantry cranes for transferring the containers from the handling carts to the container stacking area, and cart shifting equipment for shifting empty handling carts between the delivery and return lanes such that the empty carts can be returned to the loading position via the return lane.

摘要翻译： 一个集装箱堆场运输系统包括一个集装箱堆场，该集装箱堆场具有至少一个集装箱堆放区域，至少一个集装箱运送车道沿着集装箱储存区域设置的集装箱运送车道，一个与运送车道相关的集装箱搬运车返回车道，多个集装箱 处理运送和返回车道中的车辆，将集装箱从地面运输车辆转运到运送车道装载位置的搬运车的门处理设备，使得集装箱1经由车辆运送到搬运车上的集装箱堆放区域 运送车道，用于将容器从搬运车转运到集装箱堆放区域的一个或多个起重机龙门起重机，以及用于在运送和返回车道之间移动空搬运车的推车换档设备，使得空车可以返回到装载位置 通过返回车道。

公开(公告)号：USD642605S1

公开(公告)日：2011-08-02

申请号：US29358979

申请日：2010-04-02

申请人： Tetsuya Ishikawa ,  Alexander Tam ,  David H. Quach

设计人： Tetsuya Ishikawa ,  Alexander Tam ,  David H. Quach

公开(公告)号：US07674352B2

公开(公告)日：2010-03-09

申请号：US11564198

申请日：2006-11-28

申请人： David Bour ,  Lori Washington ,  Sandeep Nijhawan ,  Ronald Stevens ,  Jacob Smith ,  Alexander Tam ,  Nyi Oo Myo ,  Steve Park ,  Rosemary Twist ,  Garry Kwong ,  Jie Su

发明人： David Bour ,  Lori Washington ,  Sandeep Nijhawan ,  Ronald Stevens ,  Jacob Smith ,  Alexander Tam ,  Nyi Oo Myo ,  Steve Park ,  Rosemary Twist ,  Garry Kwong ,  Jie Su

IPC分类号： C23F1/00 ,  H01L21/306

CPC分类号： C23C16/45565 ,  C23C16/45514 ,  C23C16/45572 ,  C23C16/45574

摘要： A gaseous mixture is deposited onto a substrate surface using a showerhead. A first plenum of the showerhead has a plurality of channels fluidicly coupled with an interior of a processing chamber. A second plenum gas flows through a plurality of tubes extending from a second plenum of the showerhead through the channels into the interior of the processing chamber. The diameter of the tubes is smaller than the diameter of the channels such that a first plenum gas flows into the interior of the processing chamber through a space defined between the outer surface of the tubes and the surface of the channels. The length and diameter of the tubes determine the level of distribution and the molar ratio of the first gas and the second gas in the gaseous mixture that is deposited on the surface of the substrate.

摘要翻译： 使用喷头将气体混合物沉积到基底表面上。 喷头的第一增压室具有与处理室的内部流体耦合的多个通道。 第二增压气体流过从喷头的第二增压室通过通道延伸到处理室内部的多个管。 管的直径小于通道的直径，使得第一增压气体通过限定在管的外表面和通道表面之间的空间流入处理室的内部。 管的长度和直径确定沉积在基底表面上的气态混合物中的分布水平和第一气体与第二气体的摩尔比。

公开(公告)号：US20090314762A1

公开(公告)日：2009-12-24

申请号：US12485160

申请日：2009-06-16

申请人： Anqing Cui ,  Binh Tran ,  Alexander Tam ,  Jacob W. Smith ,  R. Suryanarayanan Iyer ,  Joseph Yudovsky ,  Sean M. Seutter

发明人： Anqing Cui ,  Binh Tran ,  Alexander Tam ,  Jacob W. Smith ,  R. Suryanarayanan Iyer ,  Joseph Yudovsky ,  Sean M. Seutter

IPC分类号： H05B3/68

CPC分类号： H01L21/67103 ,  H01L21/67248 ,  H05B3/68

摘要： Apparatus, reactors, and methods for heating substrates are disclosed. The apparatus comprises a stage comprising a body and a surface having an area to support a substrate, a shaft coupled to the stage, a first heating element disposed within a central region of the body of the stage, and at least second and third heating elements disposed within the body of the stage, the at least second and third heating elements each partially surrounding the first heating element and wherein the at least second and third heating elements are circumferentially adjacent to each other.

摘要翻译： 公开了用于加热基底的装置，反应器和方法。 该装置包括一个舞台，包括主体和具有支撑衬底的区域的表面，耦合到舞台的轴，设置在舞台的身体的中心区域内的第一加热元件，以及至少第二和第三加热元件 设置在所述台体内，所述至少第二和第三加热元件各自部分地围绕所述第一加热元件，并且其中所述至少第二和第三加热元件彼此周向相邻。

公开(公告)号：US20090194026A1

公开(公告)日：2009-08-06

申请号：US12023572

申请日：2008-01-31

申请人： BRIAN H. BURROWS ,  Lori D. Washington ,  Ronald Stevens ,  Kenric T. Choi ,  Anthony F. White ,  Roger N. Anderson ,  Sandeep Nijhawan ,  Joshua J. Podesta ,  Alexander Tam

发明人： BRIAN H. BURROWS ,  Lori D. Washington ,  Ronald Stevens ,  Kenric T. Choi ,  Anthony F. White ,  Roger N. Anderson ,  Sandeep Nijhawan ,  Joshua J. Podesta ,  Alexander Tam

IPC分类号： C23C16/54

CPC分类号： C23C16/54 ,  C30B25/08 ,  C30B29/403 ,  C30B35/00 ,  H01L21/67017 ,  H01L21/67115 ,  H01L21/67161 ,  H01L21/67207 ,  H01L21/68764 ,  H01L21/68771

摘要： One embodiment of a processing system for fabricating compound nitride semiconductor devices comprises one or more processing chamber operable with form a compound nitride semiconductor layer on a substrate, a transfer chamber coupled with the processing chamber, a loadlock chamber coupled with the transfer chamber, and a load station coupled with the loadlock chamber, wherein the load station comprises a conveyor tray movable to convey a carrier plate loaded with one or more substrates into the loadlock chamber. Compared to a single chamber reactor, the multi-chamber processing system expands the potential complexity and variety of compound structures. Additionally, the system can achieve higher quality and yield by specialization of individual chambers for specific epitaxial growth processes. Throughput is increased by simultaneous processing in multiple chambers.

摘要翻译： 用于制造复合氮化物半导体器件的处理系统的一个实施例包括可在衬底上形成复合氮化物半导体层的可操作的一个或多个处理室，与处理室耦合的传送室，与传送室耦合的负载锁定室，以及 加载站与负载锁定室耦合，其中装载站包括可移动以将装载有一个或多个基板的承载板输送到负载锁定室中的输送器托盘。 与单室反应器相比，多室处理系统扩大了复合结构的潜在复杂性和多样性。 此外，该系统可以通过专用于特定外延生长工艺的各个室来实现更高的质量和产量。 通过在多个室中同时处理来提高吞吐量。

公开(公告)号：US20090095221A1

公开(公告)日：2009-04-16

申请号：US11873170

申请日：2007-10-16

申请人： Alexander TAM ,  Ronald STEVENS ,  Jacob GRAYSON ,  David BOUR ,  Sandeep NIJHAWAN

发明人： Alexander TAM ,  Ronald STEVENS ,  Jacob GRAYSON ,  David BOUR ,  Sandeep NIJHAWAN

IPC分类号： C23C16/54

CPC分类号： C23C16/45565 ,  C23C16/34

摘要： A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, a metal organic chemical vapor deposition (MOCVD) process is used to deposit a Group III-nitride film on a plurality of substrates. A Group III precursor, such as trimethyl gallium, trimethyl aluminum or trimethyl indium and a nitrogen-containing precursor, such as ammonia, are separately delivered to a plurality of concentric gas injection ports. The precursor gases are injected into mixing zones where the gases are mixed before entering a processing volume containing the substrates.

摘要翻译： 提供了可用于化学气相沉积和/或氢化物气相外延（HVPE）沉积的方法和装置。 在一个实施例中，使用金属有机化学气相沉积（MOCVD）工艺在多个基板上沉积III族氮化物膜。 三甲基镓，三甲基铝或三甲基铟等的III族前体和氨等的含氮前体分别输送到多个同心气体注入口。 将前体气体注入混合区，在混合区中气体混合，然后再进入含有底物的处理体积。

公开(公告)号：US20080314311A1

公开(公告)日：2008-12-25

申请号：US11767520

申请日：2007-06-24

申请人： Brian H. Burrows ,  Alexander Tam ,  Ronald Stevens ,  Jacob Grayson ,  Kenric T. Choi ,  Sumedh Acharya ,  Sandeep Nijhawan ,  Olga Kryliouk ,  Yuriy Melnik

发明人： Brian H. Burrows ,  Alexander Tam ,  Ronald Stevens ,  Jacob Grayson ,  Kenric T. Choi ,  Sumedh Acharya ,  Sandeep Nijhawan ,  Olga Kryliouk ,  Yuriy Melnik

IPC分类号： C30B25/14 ,  C23C16/34

CPC分类号： C23C16/4488 ,  C23C16/45502 ,  C23C16/45512 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45574 ,  C23C16/45578 ,  C30B25/14 ,  C30B29/403 ,  Y10T117/10

摘要： A method and apparatus that may be utilized in deposition processes, such as hydride vapor phase epitaxial (HVPE) deposition of metal nitride films, are provided. A first set of passages may introduce a metal containing precursor gas. A second set of passages may provide a nitrogen-containing precursor gas. The first and second sets of passages may be interspersed in an effort to separate the metal containing precursor gas and nitrogen-containing precursor gas until they reach a substrate. An inert gas may also be flowed down through the passages to help keep separation and limit reaction at or near the passages, thereby preventing unwanted deposition on the passages.

摘要翻译： 提供了可用于沉积工艺的方法和装置，例如金属氮化物膜的氢化物气相外延（HVPE）沉积。 第一组通道可以引入含金属的前体气体。 第二组通道可以提供含氮前体气体。 第一组和第二组通道可以散布，以分离含金属的前体气体和含氮前体气体，直到它们到达基底。 惰性气体也可以通过通道向下流动，以帮助保持分离并限制通道处或附近的反应，从而防止通道上的不希望的沉积。

公开(公告)号：US20060281310A1

公开(公告)日：2006-12-14

申请号：US11147938

申请日：2005-06-08

申请人： Jacob Smith ,  Alexander Tam ,  R. Iyer ,  Sean Seutter ,  Binh Tran ,  Nir Merry ,  Adam Brailove ,  Robert Shydo ,  Robert Andrews ,  Frank Roberts ,  Theodore Smick ,  Geoffrey Ryding

发明人： Jacob Smith ,  Alexander Tam ,  R. Iyer ,  Sean Seutter ,  Binh Tran ,  Nir Merry ,  Adam Brailove ,  Robert Shydo ,  Robert Andrews ,  Frank Roberts ,  Theodore Smick ,  Geoffrey Ryding

IPC分类号： H01L21/44 ,  C23C16/00

CPC分类号： H01L21/68792 ,  C23C16/4584 ,  H01L21/67126 ,  H01L21/68742

摘要： A method and apparatus for processing a substrate utilizing a rotating substrate support are disclosed herein. In one embodiment, an apparatus for processing a substrate includes a chamber having a substrate support assembly disposed within the chamber. The substrate support assembly includes a substrate support having a support surface and a heater disposed beneath the support surface. A shaft is coupled to the substrate support and a motor is coupled to the shaft through a rotor to provide rotary movement to the substrate support. A seal block is disposed around the rotor and forms a seal therewith. The seal block has at least one seal and at least one channel disposed along the interface between the seal block and the shaft. A port is coupled to each channel for connecting to a pump. A lift mechanism is coupled to the shaft for raising and lowering the substrate support.

摘要翻译： 本文公开了一种利用旋转衬底支撑件来处理衬底的方法和装置。 在一个实施例中，用于处理衬底的装置包括具有设置在腔室内的衬底支撑组件的室。 衬底支撑组件包括具有支撑表面的衬底支撑件和设置在支撑表面下方的加热器。 轴联接到基板支撑件，并且电机通过转子联接到轴，以向基板支撑件提供旋转运动。 密封块设置在转子周围并与其形成密封。 密封块具有至少一个密封件和沿密封块和轴之间的界面设置的至少一个通道。 端口连接到每个通道以连接到泵。 升降机构联接到轴上以升高和降低基板支撑。