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公开(公告)号：US20120024388A1
公开(公告)日：2012-02-02
申请号：US13181431
申请日：2011-07-12
申请人： Brian H. Burrows , Alexander Tam , Ronald Stevens , Kenric T. Choi , James D. Felsch , Jacob Grayson , Sumedh Acharya , Sandeep Nijhawan , Lori D. Washington , Nyi O. Myo
发明人： Brian H. Burrows , Alexander Tam , Ronald Stevens , Kenric T. Choi , James D. Felsch , Jacob Grayson , Sumedh Acharya , Sandeep Nijhawan , Lori D. Washington , Nyi O. Myo
IPC分类号： F16L37/56
CPC分类号： C23C16/45565 , C23C16/45514 , C23C16/45519 , C23C16/45574 , C23C16/45578 , C30B25/14 , C30B29/403 , Y10T137/0318 , Y10T137/87153
摘要： A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, a metal organic chemical vapor deposition (MOCVD) process is used to deposit a Group III-nitride film on a plurality of substrates. A Group III precursor, such as trimethyl gallium, trimethyl aluminum or trimethyl indium and a nitrogen-containing precursor, such as ammonia, are delivered to a plurality of straight channels which isolate the precursor gases. The precursor gases are injected into mixing channels where the gases are mixed before entering a processing volume containing the substrates. Heat exchanging channels are provided for temperature control of the mixing channels to prevent undesirable condensation and reaction of the precursors.
摘要翻译： 提供了可用于化学气相沉积和/或氢化物气相外延（HVPE）沉积的方法和装置。 在一个实施例中，使用金属有机化学气相沉积（MOCVD）工艺在多个基板上沉积III族氮化物膜。 将III族前体，例如三甲基镓，三甲基铝或三甲基铟，以及含氮前体，例如氨，被输送到多个直接通道，其分离前体气体。 将前体气体注入到混合通道中，在混合通道中气体被混合，然后进入含有底物的处理体积。 提供热交换通道用于混合通道的温度控制，以防止不希望的前体的冷凝和反应。
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公开(公告)号：US20090098276A1
公开(公告)日：2009-04-16
申请号：US11873132
申请日：2007-10-16
申请人： Brian H. BURROWS , Alexander Tam , Ronald Stevens , Kenric T. Choi , James D. Felsch , Jacob Grayson , Sumedh Acharya , Sandeep Nijhawan , Lori D. Washington , Nyi O. Myo
发明人： Brian H. BURROWS , Alexander Tam , Ronald Stevens , Kenric T. Choi , James D. Felsch , Jacob Grayson , Sumedh Acharya , Sandeep Nijhawan , Lori D. Washington , Nyi O. Myo
IPC分类号： C23C16/00
CPC分类号： C23C16/45565 , C23C16/45514 , C23C16/45519 , C23C16/45574 , C23C16/45578 , C30B25/14 , C30B29/403 , Y10T137/0318 , Y10T137/87153
摘要： A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, a metal organic chemical vapor deposition (MOCVD) process is used to deposit a Group III-nitride film on a plurality of substrates. A Group III precursor, such as trimethyl gallium, trimethyl aluminum or trimethyl indium and a nitrogen-containing precursor, such as ammonia, are delivered to a plurality of straight channels which isolate the precursor gases. The precursor gases are injected into mixing channels where the gases are mixed before entering a processing volume containing the substrates. Heat exchanging channels are provided for temperature control of the mixing channels to prevent undesirable condensation and reaction of the precursors.
摘要翻译： 提供了可用于化学气相沉积和/或氢化物气相外延（HVPE）沉积的方法和装置。 在一个实施例中，使用金属有机化学气相沉积（MOCVD）工艺在多个基板上沉积III族氮化物膜。 将III族前体，例如三甲基镓，三甲基铝或三甲基铟，以及含氮前体，例如氨，被输送到多个分离前体气体的直通道。 将前体气体注入到混合通道中，在混合通道中气体被混合，然后进入含有底物的处理体积。 提供热交换通道用于混合通道的温度控制，以防止不希望的前体的冷凝和反应。
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公开(公告)号：US07976631B2
公开(公告)日：2011-07-12
申请号：US11873132
申请日：2007-10-16
申请人： Brian H. Burrows , Alexander Tam , Ronald Stevens , Kenric T. Choi , James D. Felsch , Jacob Grayson , Sumedh Acharya , Sandeep Nijhawan , Lori D. Washington , Nyi O. Myo
发明人： Brian H. Burrows , Alexander Tam , Ronald Stevens , Kenric T. Choi , James D. Felsch , Jacob Grayson , Sumedh Acharya , Sandeep Nijhawan , Lori D. Washington , Nyi O. Myo
IPC分类号： C23C16/00 , C23C16/455 , H01L21/306 , H01L21/3065
CPC分类号： C23C16/45565 , C23C16/45514 , C23C16/45519 , C23C16/45574 , C23C16/45578 , C30B25/14 , C30B29/403 , Y10T137/0318 , Y10T137/87153
摘要： A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, a metal organic chemical vapor deposition (MOCVD) process is used to deposit a Group III-nitride film on a plurality of substrates. A Group III precursor, such as trimethyl gallium, trimethyl aluminum or trimethyl indium and a nitrogen-containing precursor, such as ammonia, are delivered to a plurality of straight channels which isolate the precursor gases. The precursor gases are injected into mixing channels where the gases are mixed before entering a processing volume containing the substrates. Heat exchanging channels are provided for temperature control of the mixing channels to prevent undesirable condensation and reaction of the precursors.
摘要翻译： 提供了可用于化学气相沉积和/或氢化物气相外延（HVPE）沉积的方法和装置。 在一个实施例中，使用金属有机化学气相沉积（MOCVD）工艺在多个基板上沉积III族氮化物膜。 将III族前体，例如三甲基镓，三甲基铝或三甲基铟，以及含氮前体，例如氨，被输送到多个分离前体气体的直通道。 将前体气体注入到混合通道中，在混合通道中气体被混合，然后进入含有底物的处理体积。 提供热交换通道用于混合通道的温度控制，以防止不希望的前体的冷凝和反应。
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公开(公告)号：US08481118B2
公开(公告)日：2013-07-09
申请号：US13181431
申请日：2011-07-12
申请人： Brian H. Burrows , Alexander Tam , Ronald Stevens , Kenric T. Choi , James D. Felsch , Jacob Grayson , Sumedh Acharya , Sandeep Nijhawan , Lori D. Washington , Nyi O. Myo
发明人： Brian H. Burrows , Alexander Tam , Ronald Stevens , Kenric T. Choi , James D. Felsch , Jacob Grayson , Sumedh Acharya , Sandeep Nijhawan , Lori D. Washington , Nyi O. Myo
IPC分类号： C23C16/00 , C23C16/06 , C23C16/08 , C23C16/455
CPC分类号： C23C16/45565 , C23C16/45514 , C23C16/45519 , C23C16/45574 , C23C16/45578 , C30B25/14 , C30B29/403 , Y10T137/0318 , Y10T137/87153
摘要： A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, a metal organic chemical vapor deposition (MOCVD) process is used to deposit a Group III-nitride film on a plurality of substrates. A Group III precursor, such as trimethyl gallium, trimethyl aluminum or trimethyl indium and a nitrogen-containing precursor, such as ammonia, are delivered to a plurality of straight channels which isolate the precursor gases. The precursor gases are injected into mixing channels where the gases are mixed before entering a processing volume containing the substrates. Heat exchanging channels are provided for temperature control of the mixing channels to prevent undesirable condensation and reaction of the precursors.
摘要翻译： 提供了可用于化学气相沉积和/或氢化物气相外延（HVPE）沉积的方法和装置。 在一个实施例中，使用金属有机化学气相沉积（MOCVD）工艺在多个基板上沉积III族氮化物膜。 将III族前体，例如三甲基镓，三甲基铝或三甲基铟，以及含氮前体，例如氨，被输送到多个分离前体气体的直通道。 将前体气体注入到混合通道中，在混合通道中气体被混合，然后进入含有底物的处理体积。 提供热交换通道用于混合通道的温度控制，以防止不希望的前体的冷凝和反应。
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