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    MULTIPLE PRECURSOR CONCENTRIC DELIVERY SHOWERHEAD
    5.
    发明申请
    MULTIPLE PRECURSOR CONCENTRIC DELIVERY SHOWERHEAD 审中-公开
    多款前置式集散式淋浴花洒

    公开(公告)号：US20110256692A1

    公开(公告)日：2011-10-20

    申请号：US12785241

    申请日：2010-05-21

    申请人： Alexander Tam ,  Anzhong Chang ,  Sumedh Acharya

    发明人： Alexander Tam ,  Anzhong Chang ,  Sumedh Acharya

    IPC分类号： H01L21/20 ,  C23C16/00

    CPC分类号： B05B1/18 ,  C23C16/45519 ,  C23C16/45565 ,  C23C16/52 ,  C30B25/14 ,  H01L21/67115

    摘要： A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, the apparatus provides a processing chamber that includes a showerhead with separate inlets and channels for delivering separate processing gases into a processing volume of the chamber without mixing the gases prior to entering the processing volume. In one embodiment, a plurality of concentric tube assemblies are disposed within the showerhead to separately deliver a first gas from a first gas channel and a second gas from a second gas channel into the processing volume of the chamber. In one embodiment, the showerhead further includes a heat exchanging channel through which the plurality of concentric tube assemblies is disposed.

    摘要翻译： 提供了可用于化学气相沉积和/或氢化物气相外延（HVPE）沉积的方法和装置。 在一个实施例中，该设备提供处理室，其包括具有独立入口和通道的喷头，用于在进入处理容积之前将不同的处理气体输送到室的处理容积而不混合气体。 在一个实施例中，多个同心管组件设置在喷头内，以将第一气体从第一气体通道和第二气体从第二气体通道单独输送到腔室的处理容积中。 在一个实施例中，喷头还包括热交换通道，多个同心管组件通过该热交换通道设置。

    CVD APPARATUS
    6.
    发明申请
    CVD APPARATUS 审中-公开
    CVD装置

    公开(公告)号：US20090194024A1

    公开(公告)日：2009-08-06

    申请号：US12023520

    申请日：2008-01-31

    申请人： Brian H. Burrows ,  Ronald Stevens ,  Jacob Grayson ,  Joshua J. Podesta ,  Sandeep Nijhawan ,  Lori D. Washington ,  Alexander Tam ,  Sumedh Acharya

    发明人： Brian H. Burrows ,  Ronald Stevens ,  Jacob Grayson ,  Joshua J. Podesta ,  Sandeep Nijhawan ,  Lori D. Washington ,  Alexander Tam ,  Sumedh Acharya

    IPC分类号： C23C16/52 ,  C23C16/46

    CPC分类号： C23C16/452 ,  C23C16/481 ,  C23C16/52 ,  H01L21/67248 ,  H01L21/68764 ,  H01L21/68771

    摘要： Embodiments of the present invention generally relate to methods and apparatus for chemical vapor deposition (CVD) on a substrate, and, in particular, to a process chamber and components for use in metal organic chemical vapor deposition. The apparatus comprises a chamber body defining a process volume. A showerhead in a first plane defines a top portion of the process volume. A carrier plate extends across the process volume in a second plane forming an upper process volume between the showerhead and the susceptor plate. A transparent material in a third plane defines a bottom portion of the process volume forming a lower process volume between the carrier plate and the transparent material. A plurality of lamps forms one or more zones located below the transparent material. The apparatus provides uniform precursor flow and mixing while maintaining a uniform temperature over larger substrates thus yielding a corresponding increase in throughput.

    摘要翻译： 本发明的实施方案一般涉及用于基板上的化学气相沉积（CVD）的方法和装置，特别涉及用于金属有机化学气相沉积中的处理室和组件。 该装置包括限定处理量的室主体。 第一平面中的喷头定义了处理量的顶部。 载体板在第二平面中延伸过程体积，形成在喷头和基座板之间的上过程体积。 在第三平面中的透明材料限定了处理体积的底部，其在承载板和透明材料之间形成较低的处理体积。 多个灯形成位于透明材料下方的一个或多个区域。 该装置提供均匀的前体流动和混合，同时在较大的底物上保持均匀的温度，从而产生相应的生产量的增加。

    MULTI-GAS SPIRAL CHANNEL SHOWERHEAD
    7.
    发明申请
    MULTI-GAS SPIRAL CHANNEL SHOWERHEAD 审中-公开
    多气体螺旋通道淋浴

    公开(公告)号：US20090095222A1

    公开(公告)日：2009-04-16

    申请号：US11873141

    申请日：2007-10-16

    申请人： Alexander Tam ,  Jacob Grayson ,  Sumedh Acharya

    发明人： Alexander Tam ,  Jacob Grayson ,  Sumedh Acharya

    IPC分类号： C23C16/00

    CPC分类号： C23C16/34 ,  C23C16/45565

    摘要： A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, a metal organic chemical vapor deposition (MOCVD) process is used to deposit a Group III-nitride film on a plurality of substrates. A Group III precursor, such as trimethyl gallium, trimethyl aluminum or trimethyl indium and a nitrogen-containing precursor, such as ammonia, are delivered to a plurality of spiral channels which isolate the precursor gases. The precursor gases are injected into a mixing channel where the gases are mixed before entering a processing volume containing the substrates.

    摘要翻译： 提供了可用于化学气相沉积和/或氢化物气相外延（HVPE）沉积的方法和装置。 在一个实施例中，使用金属有机化学气相沉积（MOCVD）工艺在多个基板上沉积III族氮化物膜。 将III族前体，例如三甲基镓，三甲基铝或三甲基铟以及含氮前体，例如氨，被输送到多个分离前体气体的螺旋通道。 将前体气体注入到混合通道中，在混合通道中气体被混合，然后进入含有底物的处理体积。

    Showerhead assembly with gas injection distribution devices
    9.
    发明授权
    Showerhead assembly with gas injection distribution devices 有权

    公开(公告)号：US10130958B2

    公开(公告)日：2018-11-20

    申请号：US12856747

    申请日：2010-08-16

    申请人： Alexander Tam ,  Anzhong Chang ,  Sumedh Acharya

    发明人： Alexander Tam ,  Anzhong Chang ,  Sumedh Acharya

    IPC分类号： C23C16/455 ,  B05B1/18 ,  C23C16/52 ,  C30B25/14 ,  H01L21/67

    摘要： A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. The apparatus includes a showerhead assembly with separate inlets and manifolds for delivering separate processing gases into a processing volume of the chamber without mixing the gases prior to entering the processing volume. The showerhead includes a plurality of gas distribution devices disposed within a plurality of gas inlets for injecting one of the processing gases into and distributing it across a manifold for uniform delivery into the processing volume of the chamber. Each of the gas distribution devices preferably has a nozzle configured to evenly distribute the processing gas flowing therethrough while minimizing recirculation of the processing gas within the manifold. As a result, improved deposition uniformity is achieved on a plurality of substrates positioned in the processing volume of the processing chamber.