公开(公告)号：US20180328859A1

公开(公告)日：2018-11-15

申请号：US15757856

申请日：2016-08-03

申请人： SUMCO CORPORATION

发明人： Tatsuya OSADA ,  Masahiko EGASHIRA ,  Tomokatsu UCHINO

IPC分类号： G01N21/95 ,  G01N21/64

CPC分类号： G01N21/9501 ,  G01B11/30 ,  G01N21/6489 ,  G01N21/956

摘要： Provided is a wafer inspection method capable of examining whether pits are formed in wafer surfaces. The wafer inspection method includes the steps of: choosing defects of a wafer using a first optical system; selecting potential pits from the chosen defects; and classifying the potential pits into pits and defects other than the pits using a second optical system.

公开(公告)号：US12116692B2

公开(公告)日：2024-10-15

申请号：US17413925

申请日：2019-12-16

申请人： SUMCO CORPORATION

发明人： Takeshi Fujita ,  Ken Kitahara ,  Tomokazu Katano ,  Eriko Kitahara

IPC分类号： C03B15/10 ,  C03B19/09 ,  C03C3/06 ,  C03C4/10 ,  C30B15/10

CPC分类号： C30B15/10 ,  C03B19/095 ,  C03C3/06 ,  C03C4/10 ,  C03C2201/02 ,  C03C2204/00

摘要： A quartz glass crucible 1 having a cylindrical side wall portion 10a, a bottom portion 10b, and a corner portion 10c connecting the side wall portion 10a and the bottom portion 10b to each other includes a transparent layer 11 made of quartz glass, and a bubble layer 12 made of quartz glass and formed outside the transparent layer 11. A ratio of an infrared transmittance of the corner portion 10c at a maximum thickness position of the corner portion 10c to an infrared transmittance of the side wall portion 10a is 0.3 or more and 0.99 or less, and an absolute value of a rate of change in infrared transmittance in a height direction along a wall surface of the crucible from a center of the bottom portion 10b toward an upper end of the side wall portion 10a is 3%/cm or less.

公开(公告)号：US20240279106A1

公开(公告)日：2024-08-22

申请号：US18290547

申请日：2022-02-09

申请人： SUMCO Corporation

发明人： Masami OHARA ,  Hiroshi KISHI ,  Eriko KITAHARA ,  Hideki FUJIWARA

IPC分类号： C03C3/06 ,  C03C17/00 ,  C30B15/10 ,  C30B29/06

CPC分类号： C03C3/06 ,  C03C17/004 ,  C30B15/10 ,  C30B29/06 ,  C03C2201/02 ,  C03C2218/112

摘要： A quartz glass crucible includes a crucible base body having silica glass and a coating film containing a crystallization accelerator and formed on the inner surface of the crucible base body. The coating film has a peel strength of 0.3 kN/m or more.

公开(公告)号：US20240278379A1

公开(公告)日：2024-08-22

申请号：US18568469

申请日：2022-05-12

申请人： SUMCO Corporation

发明人： Ryo KURAMOTO ,  Taiki GOTO

IPC分类号： B24B37/005 ,  B24B37/08 ,  B24B49/10

CPC分类号： B24B37/005 ,  B24B37/08 ,  B24B49/10

摘要： Based on the relational data that indicates the relationship between inter-plate distance, which is a distance between the upper plate and the lower plate at two or more positions where distances from the center of the rotating plate are different, and the flatness of the work, the optimal value of the inter-plate distance is calculated.

公开(公告)号：US20240246191A1

公开(公告)日：2024-07-25

申请号：US18289924

申请日：2022-02-28

申请人： SUMCO CORPORATION

发明人： Yuki NAKANO

IPC分类号： B24B37/013 ,  B24B37/015 ,  H01L21/66

CPC分类号： B24B37/013 ,  B24B37/015 ,  H01L22/26

摘要： A method of creating a correlation relational formula for determining a polishing condition, the method including polishing semiconductor wafers under a plurality of polishing conditions including a plurality of polishing parameters, and acquiring, by actual measurement, in-plane polishing amount distribution information on the semiconductor wafers in polishing under the plurality of polishing conditions; polishing semiconductor wafers under a plurality of polishing conditions including a plurality of polishing parameters, and acquiring, by actual measurement, in-plane temperature distribution information during semiconductor wafer polishing in polishing under the plurality of polishing conditions, or creating in-plane temperature distribution information during semiconductor wafer polishing under polishing conditions including a plurality of polishing parameters by heat transfer analysis, and correlating relational formulas between a semiconductor wafer in-plane temperature distribution parameter and a plurality of polishing parameters.

公开(公告)号：US11920257B2

公开(公告)日：2024-03-05

申请号：US17392652

申请日：2021-08-03

申请人： SUMCO CORPORATION

发明人： Takashi Muramatsu ,  Hirokazu Kato

IPC分类号： C04B35/565 ,  C23C16/44 ,  C30B29/06 ,  G01N27/62 ,  H01J37/32 ,  H01L21/02 ,  H01L21/304 ,  C30B23/02 ,  C30B29/36 ,  G01N27/623 ,  G01N33/00

CPC分类号： C30B29/06 ,  C04B35/565 ,  C23C16/4407 ,  G01N27/62 ,  H01J37/32862 ,  H01L21/02529 ,  H01L21/304 ,  C30B23/02 ,  C30B29/36 ,  G01N27/623 ,  G01N2033/0095

摘要： A method of evaluating cleanliness of a member having a silicon carbide surface, the method including bringing the silicon carbide surface into contact with a mixed acid of hydrofluoric acid, hydrochloric acid and nitric acid; concentrating the mixed acid brought into contact with the silicon carbide surface by heating; subjecting a sample solution obtained by diluting a concentrated liquid obtained by the concentration to quantitative analysis of metal components by Inductively Coupled Plasma-Mass Spectrometry; and evaluating cleanliness of the member having a silicon carbide surface on the basis of a quantitative result of metal components obtained by the quantitative analysis.

公开(公告)号：US20240071756A1

公开(公告)日：2024-02-29

申请号：US18494122

申请日：2023-10-25

申请人： SUMCO CORPORATION

发明人： Koji MATSUMOTO ,  Toshiaki ONO ,  Hiroshi AMANO ,  Yoshio HONDA

IPC分类号： H01L21/02 ,  H01L21/322

CPC分类号： H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/3221 ,  H01L21/02664

摘要： A method for manufacturing a group III nitride semiconductor substrate, that includes: growing a first AlN buffer layer on an Si substrate at a first growth temperature; growing a second AlN buffer layer on the first AlN buffer layer at a second growth temperature higher than the first growth temperature; and growing a group III nitride semiconductor layer on the second AlN buffer layer, wherein an Al raw material and an N raw material are alternately repeatedly fed in the growing the first AlN buffer layer.

公开(公告)号：US11890719B2

公开(公告)日：2024-02-06

申请号：US16607941

申请日：2017-10-17

申请人： SUMCO CORPORATION

发明人： Shuhei Matsuda

IPC分类号： B24B37/005 ,  B24B37/04 ,  B24B37/10 ,  B24B37/24 ,  B24B37/34 ,  B24B37/015

CPC分类号： B24B37/245 ,  B24B37/005 ,  B24B37/0056 ,  B24B37/044 ,  B24B37/34 ,  B24B37/015

摘要： In a method of polishing a silicon wafer, a final polishing step includes an upstream polishing step and a subsequent finish polishing step. In the upstream polishing step, as a polishing agent, a first alkaline aqueous solution containing abrasive grains with a density of 1×1014/cm3 or more is first supplied, and the supply is then switched to a supply of a second alkaline aqueous solution containing a water-soluble polymer and abrasive grains with a density of 5×1013/cm3 or less. In the finish polishing step, as a polishing agent, a third alkaline aqueous solution containing a water-soluble polymer and abrasive grains with a density of 5×10′13/cm3 or less is supplied. Thus, the formation of not only PIDs but also scratches with small depth can be suppressed.

公开(公告)号：US11885038B2

公开(公告)日：2024-01-30

申请号：US16975563

申请日：2019-02-27

申请人： SUMCO CORPORATION

发明人： Wataru Sugimura ,  Ryusuke Yokoyama ,  Toshiyuki Fujiwara ,  Toshiaki Ono

IPC分类号： C30B15/26 ,  C30B15/16 ,  C30B29/06 ,  C30B30/04

CPC分类号： C30B15/26 ,  C30B15/16 ,  C30B29/06 ,  C30B30/04

摘要： A convection pattern estimation method of a silicon melt includes: applying a horizontal magnetic field of 0.2 tesla or more to a silicon melt in a rotating quartz crucible with use of a pair of magnetic bodies disposed across the quartz crucible; before a seed crystal is dipped into the silicon melt to which the horizontal magnetic field is applied; measuring temperatures at a first and second measurement points positioned on a first imaginary line that passes through a center of a surface of the silicon melt and is not in parallel with a central magnetic field line of the horizontal magnetic field as viewed vertically from above; and estimating a direction of a convection flow in a plane in the silicon melt orthogonal to the direction in which the horizontal magnetic field is applied on a basis of the measured temperatures of the first and second measurement points.

公开(公告)号：US20240019397A1

公开(公告)日：2024-01-18

申请号：US18036988

申请日：2021-12-06

申请人： SUMCO Corporation

发明人： Ippei SHIMOZAKI ,  Keiichi TAKANASHI

IPC分类号： G01N27/74 ,  C30B29/06 ,  C30B15/22

CPC分类号： G01N27/74 ,  C30B29/06 ,  C30B15/22

摘要： To provide a method of estimating an oxygen concentration in a silicon single crystal, a method of manufacturing a silicon single crystal, and a silicon single crystal manufacturing apparatus capable of manufacturing silicon single crystals having constant quality by preventing polarization of the oxygen concentration in the silicon single crystal. A method of estimating an oxygen concentration in a silicon single crystal according to the present invention is provided with measuring a height (gap) of a melt surface of a silicon melt in a quartz crucible when pulling up a silicon single crystal while applying a lateral magnetic field to the silicon melt and estimating an oxygen concentration in the silicon single crystal from a minute variation in the height of the melt surface.