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公开(公告)号：US09245611B2
公开(公告)日：2016-01-26
申请号：US14702828
申请日：2015-05-04
CPC分类号： G11C11/1675 , G06F11/1048 , G06F11/1076 , G11C11/00 , G11C11/16 , G11C11/1673 , G11C11/1693 , G11C2013/0076 , G11C2029/0411
摘要： A method includes sampling magnetic bits, applying a write current pulse to the magnetic bits to set them to a first logic state, resampling the magnetic bits, and comparing the results of sampling and resampling to determine the bit state for each magnetic bit. A read or write operation may be received after initiation of writing back magnetic bits having the second state, where the write-back can be aborted for a portion of the bits in the case of a write operation. The write-back may be performed such that different portions of the magnetic bits are written back at different times, thereby staggering the write-back current pulses in time. An offset current may also be used during resampling.
摘要翻译： 一种方法包括采样磁头，将写入电流脉冲施加到磁性位以将其设置为第一逻辑状态，重新采样磁头，以及比较采样和重采样的结果，以确定每个磁性位的位状态。 在开始写入具有第二状态的磁性位之后可以接收读取或写入操作，其中在写入操作的情况下可以针对位的一部分中止回写。 可以执行回写，使得磁头的不同部分在不同的时间被写回，从而及时地交错回写电流脉冲。 在重采样期间也可以使用偏移电流。
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82.发明授权公开(公告)号：US09229070B2
公开(公告)日：2016-01-05
申请号：US14533842
申请日：2014-11-05
发明人： Lianjun Liu , Philip Mather , Jon Slaughter
CPC分类号： G01R33/0029 , G01R33/0041 , G01R33/04 , G01R33/098
摘要： A magnitude and direction of at least one of a reset current and a second stabilization current (that produces a reset field and a second stabilization field, respectively) is determined that, when applied to an array of magnetic sense elements, minimizes the total required stabilization field and reset field during the operation of the magnetic sensor and the measurement of the external field. Therefore, the low field sensor operates optimally (with the highest sensitivity and the lowest power consumption) around the fixed external field operating point. The fixed external field is created by other components in the sensor device housing (such as speaker magnets) which have a high but static field with respect to the low (earth's) magnetic field that describes orientation information.
摘要翻译： 确定复位电流和第二稳定电流（分别产生复位场和第二稳定场）中的至少一个的幅度和方向，当应用于磁感测元件的阵列时，使总要求的稳定性最小化 在磁传感器运行期间的场和复位场以及外场测量。 因此，低场传感器在固定的外场操作点周围最佳地运行（具有最高的灵敏度和最低的功耗）。 固定的外部场是由传感器装置外壳（例如扬声器磁体）中的其他部件产生的，这些部件相对于描述取向信息的低（地球）磁场具有高但静止的场。
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公开(公告)号：US09166155B2
公开(公告)日：2015-10-20
申请号：US14264520
申请日：2014-04-29
CPC分类号： H01L43/12 , G11B5/84 , G11C11/161 , H01L27/222 , H01L43/02 , H01L43/08
摘要： A method of manufacturing a magnetoresistive-based device having magnetic material layers formed between a first electrically conductive layer and a second electrically conductive layer, the magnetic materials layers including a tunnel barrier layer formed between a first magnetic materials layer and a second magnetic materials layer, including removing the first electrically conductive layer and the first magnetic materials layer unprotected by a first hard mask, to form a first electrode and a first magnetic materials, respectively; and removing the tunnel barrier layer, second magnetic materials layer, and second electrically conductive layer unprotected by the second hard mask to form a tunnel barrier, second magnetic materials, and a second electrode.
摘要翻译： 一种制造具有在第一导电层和第二导电层之间形成的磁性材料层的基于磁阻的器件的方法，所述磁性材料层包括在第一磁性材料层和第二磁性材料层之间形成的隧道势垒层， 包括去除未被第一硬掩模保护的第一导电层和第一磁性材料层，分别形成第一电极和第一磁性材料; 以及去除不受第二硬掩模保护的隧道势垒层，第二磁性材料层和第二导电层，以形成隧道势垒，第二磁性材料和第二电极。
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公开(公告)号：US09135970B2
公开(公告)日：2015-09-15
申请号：US14175337
申请日：2014-02-07
CPC分类号： G06F21/79 , G06F21/60 , G11C7/14 , G11C7/24 , G11C11/1659 , G11C11/1673 , G11C11/1695 , G11C13/0002 , G11C13/004 , G11C13/0059 , G11C13/0069 , G11C2013/0054 , G11C2013/0073
摘要： A technique for detecting tampering attempts directed at a memory device includes setting each of a plurality of detection memory cells to an initial predetermined state, where corresponding portions of the plurality of detection memory cells are included in each of the arrays of data storage memory cells on the memory device. A plurality of corresponding reference bits on the memory device permanently store information representative of the initial predetermined state of each of the detection memory elements. When a tamper detection check is performed, a comparison between the reference bits and the current state of the detection memory cells is used to determine whether any of the detection memory cells have changed state from their initial predetermined states. Based on the comparison, a tamper detect indication is flagged if a threshold level of change is determined. Once a tampering attempt is detected, responses on the memory device include disabling one or more memory operations and generating a mock current to emulate current expected during normal operation.
摘要翻译： 用于检测针对存储器件的篡改尝试的技术包括将多个检测存储器单元中的每一个设置为初始预定状态，其中多个检测存储器单元的相应部分被包括在每个数据存储单元阵列中 存储设备。 存储器装置上的多个对应的参考位永久地存储表示每个检测存储器元件的初始预定状态的信息。 当执行篡改检测检查时，使用检测存储单元的参考位与当前状态之间的比较来确定检测存储单元中的任何一个是否已经从其初始预定状态改变状态。 基于该比较，如果确定了阈值变化水平，则标记篡改检测指示。 一旦检测到篡改尝试，存储器设备上的响应包括禁用一个或多个存储器操作并产生模拟电流以仿真在正常操作期间预期的电流。
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85.发明授权公开(公告)号：US09093640B2
公开(公告)日：2015-07-28
申请号：US14219902
申请日：2014-03-19
发明人： Sanjeev Aggarwal , Kerry Nagel , Jason Janesky
IPC分类号： H01L43/12
CPC分类号： H01L43/12 , G11C11/161 , H01L43/02 , H01L43/08 , H01L43/10
摘要： A dual tunnel barrier magnetic element has a free magnetic layer positioned between first and second tunnel barriers and an electrode over the second tunnel barrier. A two step etch process allows for forming an encapsulation material on a side wall of the electrode and the second tunnel barrier subsequent to the first etch for preventing damage to the first tunnel barrier when performing the second etch to remove a portion of the free layer.
摘要翻译： 双隧道屏障磁性元件具有位于第一和第二隧道屏障之间的自由磁性层和位于第二隧道屏障上的电极。 两步蚀刻工艺允许在第一次蚀刻之后在电极的侧壁上形成封装材料，并且在进行第二蚀刻以去除自由层的一部分时防止第一隧道势垒的损坏。
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86.发明授权公开(公告)号：US08922205B2
公开(公告)日：2014-12-30
申请号：US13286026
申请日：2011-10-31
申请人： Lianjun Liu , Philip Mather , Jon Slaughter
发明人： Lianjun Liu , Philip Mather , Jon Slaughter
CPC分类号： G01R33/0029 , G01R33/0041 , G01R33/04 , G01R33/098
摘要： A magnitude and direction of at least one of a reset current and a second stabilization current (that produces a reset field and a second stabilization field, respectively) is determined that, when applied to an array of magnetic sense elements, minimizes the total required stabilization field and reset field during the operation of the magnetic sensor and the measurement of the external field. Therefore, the low field sensor operates optimally (with the highest sensitivity and the lowest power consumption) around the fixed external field operating point. The fixed external field is created by other components in the sensor device housing (such as speaker magnets) which have a high but static field with respect to the low (earth's) magnetic field that describes orientation information.
摘要翻译： 确定复位电流和第二稳定电流（分别产生复位场和第二稳定场）中的至少一个的幅度和方向，当应用于磁感测元件的阵列时，使总要求的稳定性最小化 在磁传感器运行期间的场和复位场以及外场测量。 因此，低场传感器在固定的外场操作点周围最佳地运行（具有最高的灵敏度和最低的功耗）。 固定的外部场是由传感器装置外壳（例如扬声器磁体）中的其他部件产生的，这些部件相对于描述取向信息的低（地球）磁场具有高但静止的场。
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87.发明申请公开(公告)号：US20140217528A1
公开(公告)日：2014-08-07
申请号：US14219532
申请日：2014-03-19
申请人： Renu Whig , Jon Slaughter , Nicholas Rizzo , Jijun Sun , Frederick Mancoff , Dimitri Houssameddine
发明人： Renu Whig , Jon Slaughter , Nicholas Rizzo , Jijun Sun , Frederick Mancoff , Dimitri Houssameddine
CPC分类号： H01L43/12 , G11C11/161 , H01L43/02 , H01L43/08 , H01L43/10
摘要： A spin-torque magnetoresistive memory element has a high magnetoresistance and low current density. A free magnetic layer is positioned between first and second spin polarizers. A first tunnel barrier is positioned between the first spin polarizer and the free magnetic layer and a second tunnel barrier is positioned between the second spin polarizer and the free magnetic layer. The magnetoresistance ratio of the second tunnel barrier has a value greater than double the magnetoresistance ratio of the first tunnel barrier.
摘要翻译： 自旋转矩磁阻存储元件具有高磁阻和低电流密度。 自由磁性层位于第一和第二自旋偏振器之间。 第一隧道势垒位于第一自旋偏振器和自由磁性层之间，第二隧道势垒位于第二自旋偏振器和自由磁性层之间。 第二隧道势垒的磁阻比具有大于第一隧道势垒的磁阻比的两倍的值。
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公开(公告)号：US20140212993A1
公开(公告)日：2014-07-31
申请号：US14170100
申请日：2014-01-31
IPC分类号： H01L43/12
CPC分类号： H01L43/12
摘要： A method of manufacturing a magnetoresistive-based device includes etching a hard mask layer, the etching having a selectivity greater than 2:1 and preferably less than 5:1 of the hard mask layer to a photo resist thereover. Optionally, the photo resist is trimmed prior to the etch, and oxygen may be applied during or just subsequent to the trim of the photo resist to increase side shrinkage. An additional step includes an oxygen treatment during the etch to remove polymer from the structure and etch chamber.
摘要翻译： 一种制造基于磁阻的器件的方法包括蚀刻硬掩模层，蚀刻具有大于硬掩模层的选择性大于2:1且优选小于5:1的光刻胶。 任选地，在蚀刻之前修整光致抗蚀剂，并且可以在光刻胶的修剪期间期间或之后施加氧气以增加侧收缩。 另外的步骤包括在蚀刻期间从结构和蚀刻室去除聚合物的氧处理。
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公开(公告)号：US20130308374A1
公开(公告)日：2013-11-21
申请号：US13892107
申请日：2013-05-10
发明人： Dietmar Gogl , Syed M. Alam , Thomas Andre
IPC分类号： G11C11/16
CPC分类号： G11C11/1675 , G11C5/147 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1697 , G11C13/0069 , G11C2213/79
摘要： A cell bias control circuit maximizes the performance of devices in the read/write path of memory cells (magnetic tunnel junction device+transistor) without exceeding leakage current or reliability limits by automatically adjusting multiple control inputs of the read/write path at the memory array according to predefined profiles over supply voltage, temperature, and process corner variations by applying any specific reference parameter profiles to the memory array.
摘要翻译： 电池偏置控制电路通过自动调节存储器阵列上的读/写路径的多个控制输入，使存储器单元（磁隧道结器件+晶体管）的读/写路径中的器件的性能最大化，而不会超过泄漏电流或可靠性限制 根据电源电压，温度和过程角变化的预定义配置，通过将任何特定参考参数配置文件应用于存储器阵列。
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90.发明申请CIRCUIT AND METHOD FOR SPIN-TORQUE MRAM BIT LINE AND SOURCE LINE VOLTAGE REGULATION 有权用于旋转扭矩MRAM位线和电源线电压调节的电路和方法公开(公告)号：US20130155763A1
公开(公告)日：2013-06-20
申请号：US13720183
申请日：2012-12-19
发明人： Syed M. Alam , Thomas Andre
IPC分类号： G11C11/16
CPC分类号： G11C11/1675 , G11C11/16 , G11C11/165 , G11C11/1653 , G11C11/1673 , G11C11/1693
摘要： Circuitry and a method for regulating voltages applied to source and bit lines of a spin-torque magnetoresistive random access memory (ST-MRAM) reduces time-dependent dielectric breakdown stress of the word line transistors. During a read or write operation, only the selected bit lines and source lines are pulled down to a low voltage and/or pulled up to a high voltage depending on the operation (write 0, write 1, and read) being performed. The unselected bit lines and source lines are held at the voltage while separately timed signals pull up or pull down the selected bit lines and source lines during read and write operations.
摘要翻译： 用于调节施加到自旋扭矩磁阻随机存取存储器（ST-MRAM）的源极和位线的电压的电路和方法降低了字线晶体管的时间依赖介电击穿应力。 在读或写操作期间，根据所执行的操作（写0，写1和读），只将所选择的位线和源极线拉低至低电压和/或上拉至高电压。 未选择的位线和源极线保持在电压，而在读取和写入操作期间单独定时的信号上拉或下拉所选位线和源极线。
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