公开(公告)号：US09601685B1

公开(公告)日：2017-03-21

申请号：US15183172

申请日：2016-06-15

Applicant: International Business Machines Corporation

Inventor： Anthony J. Annunziata ,  Ching-Tzu Chen ,  Joel D. Chudow

IPC: H01L43/04 ,  H01L29/10 ,  H01L49/00 ,  H01L29/16 ,  H01L29/24 ,  H01L43/06 ,  G01N27/12 ,  H01L29/06 ,  H01L43/14

CPC classification number: H01L43/065 ,  G01N27/125 ,  H01L27/22 ,  H01L29/0649 ,  H01L29/1029 ,  H01L29/1606 ,  H01L29/24 ,  H01L43/02 ,  H01L43/04 ,  H01L43/06 ,  H01L43/08 ,  H01L43/10 ,  H01L43/14 ,  H01L49/003

Abstract: A technique relates to a semiconductor device. First metal contacts are formed on top of a substrate. The first metal contacts are arranged in a first direction, and the first metal contacts are arranged such that areas of the substrate remain exposed. Insulator pads are positioned at predefined locations on top of the first metal contacts, such that the insulator pads are spaced from one another. Second metal contacts are formed on top of the insulator pads, such that the second metal contacts are arranged in a second direction different from the first direction. The first and second metal contacts sandwich the insulator pads at the predefined locations. Surface-sensitive conductive channels are formed to contact the first metal contacts and the second metal contacts. Four-terminal devices are defined by the surface-sensitive conductive channels contacting a pair of the first metal contacts and contacting a pair of the metal contacts.

公开(公告)号：US20170062704A1

公开(公告)日：2017-03-02

申请号：US15349004

申请日：2016-11-11

Applicant: Infineon Technologies AG

Inventor： Stefan Kolb ,  Markus Eckinger

IPC: H01L43/06 ,  G01R33/00 ,  H01L27/22 ,  G01R33/07 ,  H01L43/14 ,  H01L43/04

CPC classification number: H01L43/065 ,  G01R33/0035 ,  G01R33/0052 ,  G01R33/07 ,  G01R33/075 ,  H01L27/22 ,  H01L43/04 ,  H01L43/14

Abstract: A hall effect device includes an active Hall region in a semiconductor substrate, and at least four terminal structures, each terminal structure including a switchable supply contact element and a sense contact element, wherein each supply contact element includes a transistor element with a first transistor terminal, a second transistor terminal, and a control terminal, wherein the second transistor terminal contacts the active Hall region or extends in the active Hall region; and wherein the sense contact elements are arranged in the active Hall region and neighboring to the switchable supply contact elements.

Abstract translation: 霍尔效应器件包括半导体衬底中的有源霍尔区域和至少四个端子结构，每个端子结构包括可切换电源接触元件和感测接触元件，其中每个电源接触元件包括具有第一晶体管端子的晶体管元件 ，第二晶体管端子和控制端子，其中第二晶体管端子接触有源霍尔区域或在有源霍尔区域中延伸; 并且其中所述感测接触元件布置在所述有源霍尔区域中并且与所述可切换电源接触元件相邻。

公开(公告)号：US20160254441A1

公开(公告)日：2016-09-01

申请号：US15050827

申请日：2016-02-23

Applicant: SII Semiconductor Corporation

Inventor： Takaaki HIOKA ,  Mika EBIHARA

IPC: H01L43/04 ,  H01L43/06 ,  H01L43/14 ,  G01R33/00 ,  G01R33/07

CPC classification number: H01L43/14 ,  G01D5/145 ,  G01R15/202 ,  G01R15/207 ,  G01R21/08 ,  G01R33/0005 ,  G01R33/0052 ,  G01R33/0206 ,  G01R33/07 ,  G01R33/072 ,  G01R33/077 ,  H01L23/13 ,  H01L23/145 ,  H01L23/15 ,  H01L23/32 ,  H01L43/04 ,  H01L43/065 ,  H02K11/215 ,  H03K17/9517 ,  H03K19/18 ,  H04Q2213/307

Abstract: Provided are a magnetic sensor and a method of manufacturing the same. In the magnetic sensor and the method of manufacturing the same, a magnetic converging plate holder with a recessed pattern having the same shape and size as those of a magnetic converging plate is formed in a die pad of a package on which a semiconductor substrate having Hall elements, a circuit, and the like is to be arranged, the magnetic converging plate manufactured through processes different from those of the semiconductor substrate on which the Hall elements and the circuit are formed is inserted into the magnetic converging plate holder, and the semiconductor substrate having the Hall elements, the circuit, and the like is arranged on the resultant so that a back surface thereof faces the die pad and the magnetic converging plate.

Abstract translation: 提供一种磁传感器及其制造方法。 在磁传感器及其制造方法中，在具有霍尔的半导体衬底的封装的芯片焊盘中形成具有与磁汇合板的形状和尺寸相同的凹形图案的磁会聚板保持器 元件，电路等，通过与形成有霍尔元件和电路的半导体衬底不同的工艺制造的磁会聚板被插入到磁会聚板固定器中，半导体衬底 具有霍尔元件，电路等布置在其上，使得其后表面面对芯片焊盘和磁会聚板。

公开(公告)号：US09423472B2

公开(公告)日：2016-08-23

申请号：US14972648

申请日：2015-12-17

Applicant: Infineon Technologies AG

Inventor： Stefan Kolb ,  Klemens Pruegl ,  Juergen Zimmer

IPC: H01L43/12 ,  H01L27/22 ,  G01R33/09 ,  G01R33/07

CPC classification number: H01L27/22 ,  G01R33/07 ,  G01R33/09 ,  G01R33/093 ,  G01R33/098 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/552 ,  H01L43/02 ,  H01L43/04 ,  H01L43/06 ,  H01L43/08 ,  H01L43/12 ,  H01L43/14

Abstract: In the method of manufacturing a magnetoresistive sensor module, at first a composite arrangement out of a semiconductor substrate and a metal-insulator arrangement is provided, wherein a semiconductor circuit arrangement is integrated adjacent to a main surface of the semiconductor substrate into the same, wherein the metal-insulator arrangement is arranged on the main surface of the semiconductor substrate and comprises a structured metal sheet and insulation material at least partially surrounding the structured metal sheet, wherein the structured metal sheet is electrically connected to the semiconductor circuit arrangement. Then, a magnetoresistive sensor structure is applied onto a surface of the insulation material of the composite arrangement, and finally an electrical connection between the magnetoresistive sensor structure and the structured metal sheet is established, so that the magnetoresistive sensor structure is connected to the integrated circuit arrangement.

Abstract translation: 在制造磁阻传感器模块的方法中，首先提供从半导体衬底和金属 - 绝缘体布置中的复合布置，其中半导体电路布置与半导体衬底的主表面相邻地集成在其中，其中 金属绝缘体布置在半导体衬底的主表面上并且包括结构化金属片和至少部分地围绕结构化金属片的绝缘材料，其中结构化金属片电连接到半导体电路装置。 然后，将磁阻传感器结构施加到复合布置的绝缘材料的表面上，最后建立磁阻传感器结构和结构金属片之间的电连接，使得磁阻传感器结构连接到集成电路 安排。

公开(公告)号：US09406872B1

公开(公告)日：2016-08-02

申请号：US14941878

申请日：2015-11-16

Applicant: International Business Machines Corporation

Inventor： Anthony J. Annunziata ,  Ching-Tzu Chen ,  Joel D. Chudow

IPC: H01L43/06 ,  G01N27/12 ,  H01L43/04 ,  H01L43/14

CPC classification number: H01L43/065 ,  G01N27/125 ,  H01L27/22 ,  H01L29/0649 ,  H01L29/1029 ,  H01L29/1606 ,  H01L29/24 ,  H01L43/02 ,  H01L43/04 ,  H01L43/06 ,  H01L43/08 ,  H01L43/10 ,  H01L43/14 ,  H01L49/003

Abstract: A technique relates to a semiconductor device. First metal contacts are formed on top of a substrate. The first metal contacts are arranged in a first direction, and the first metal contacts are arranged such that areas of the substrate remain exposed. Insulator pads are positioned at predefined locations on top of the first metal contacts, such that the insulator pads are spaced from one another. Second metal contacts are formed on top of the insulator pads, such that the second metal contacts are arranged in a second direction different from the first direction. The first and second metal contacts sandwich the insulator pads at the predefined locations. Surface-sensitive conductive channels are formed to contact the first metal contacts and the second metal contacts. Four-terminal devices are defined by the surface-sensitive conductive channels contacting a pair of the first metal contacts and contacting a pair of the metal contacts.

Abstract translation: 技术涉及半导体器件。 第一金属触点形成在基板的顶部。 第一金属触头沿第一方向布置，并且第一金属触点被布置成使得基板的区域保持暴露。 绝缘垫位于第一金属触点顶部的预定位置处，使得绝缘垫彼此间隔开。 第二金属触点形成在绝缘体焊盘的顶部上，使得第二金属触点沿与第一方向不同的第二方向布置。 第一和第二金属触点在预定位置处夹住绝缘体垫。 形成表面敏感导电通道以接触第一金属触点和第二金属触点。 四端子器件由接触一对第一金属触点并接触一对金属触点的表面敏感导电通道限定。

公开(公告)号：US09391263B2

公开(公告)日：2016-07-12

申请号：US14188112

申请日：2014-02-24

Applicant: Infineon Technologies AG

Inventor： Carsten von Koblinski ,  Volker Strutz ,  Manfred Engelhardt

IPC: H01L23/31 ,  H01L43/04 ,  H01L21/78 ,  H01L21/84 ,  H01L27/12 ,  H01L27/22 ,  H01L43/06 ,  H01L43/12 ,  H01L23/00 ,  H01L43/14

CPC classification number: H01L43/14 ,  H01L21/78 ,  H01L21/84 ,  H01L23/3121 ,  H01L23/3171 ,  H01L23/3178 ,  H01L23/3185 ,  H01L24/06 ,  H01L27/12 ,  H01L27/22 ,  H01L43/04 ,  H01L43/065 ,  H01L43/12 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/48091 ,  H01L2224/48463 ,  H01L2224/73265 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: In one embodiment, a semiconductor device includes a glass substrate, a semiconductor substrate disposed on the glass substrate, and a magnetic sensor disposed within and/or over the semiconductor substrate.

Abstract translation: 在一个实施例中，半导体器件包括玻璃衬底，设置在玻璃衬底上的半导体衬底和设置在半导体衬底内和/或之上的磁传感器。

公开(公告)号：US20160172584A1

公开(公告)日：2016-06-16

申请号：US15049732

申请日：2016-02-22

Applicant: ALLEGRO MICROSYSTEMS, LLC

Inventor： Shaun D. Milano ,  Michael C. Doogue ,  William P. Taylor

IPC: H01L43/04 ,  G01R33/09 ,  H01L43/06 ,  H01L23/31 ,  H01L43/14 ,  H01L23/00 ,  H01L23/495 ,  G01R33/07 ,  H01L43/08

CPC classification number: H01L43/04 ,  G01R33/0029 ,  G01R33/0052 ,  G01R33/0076 ,  G01R33/07 ,  G01R33/09 ,  H01L23/3107 ,  H01L23/3142 ,  H01L23/49503 ,  H01L23/49506 ,  H01L23/49541 ,  H01L23/49575 ,  H01L24/17 ,  H01L43/02 ,  H01L43/06 ,  H01L43/065 ,  H01L43/08 ,  H01L43/12 ,  H01L43/14 ,  H01L2224/16 ,  H01L2224/16245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/4826 ,  H01L2224/49171 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2924/15311 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Methods and apparatus to provide a magnetic field sensor device including a magnetic sensor element, a die having wafer bumps, wherein the magnetic sensor element is positioned in relation to the die, and conductive leadfingers having respective portions electrically connected to the wafer bumps. In embodiments, the device includes a region about the magnetic sensor element that does not contain electrically conductive material for preventing eddy current flow.

Abstract translation: 提供包括磁传感器元件的磁场传感器装置的方法和装置，具有晶片凸块的模具，其中磁传感器元件相对于管芯定位，以及具有电连接到晶片凸块的相应部分的导电引线。 在实施例中，该装置包括围绕磁传感器元件的不包含用于防止涡流流动的导电材料的区域。

公开(公告)号：US20160149124A1

公开(公告)日：2016-05-26

申请号：US15012130

申请日：2016-02-01

Applicant: Shanghai Ciyu Information Technologies Co., Ltd.

Inventor： Yimin Guo

IPC: H01L43/14 ,  H01L43/04 ,  H01L43/08

CPC classification number: H01L43/14 ,  G11C11/1675 ,  G11C11/18 ,  H01L27/228 ,  H01L43/04 ,  H01L43/08 ,  H01L43/12

Abstract: Present invention includes an apparatus of and method of making a spin-transfer-torque magnetoresistive memory with three terminal magnetoresistive memory element(s) having highly conductive bottom electrodes overlaid on top of a SHE-metal layer in the regions outside of an MTJ stack. The memory cell has a bit line positioned adjacent to selected ones of the plurality of magnetoresistive memory elements to supply a reading current across the magnetoresistive element stack and two highly conductive bottom electrodes overlaid and electrically contacting on top of a SHE-metal layer in the outside of an MTJ region and to supply a bi-directional spin Hall effect recording current, and accordingly to switch the magnetization of the recording layer. Thus magnetization of a recording layer can be readily switched or reversed to the direction in accordance with a direction of a current along the SHE-metal layer by applying a low write current.

Abstract translation: 本发明包括一种制造具有三个端子磁阻存储元件的自旋转移 - 转矩磁阻存储器的装置和方法，该三端子磁阻存储元件在MTJ堆叠之外的区域中覆盖在SHE-金属层的顶部上。 存储单元具有与多个磁阻存储元件中的选定的磁阻存储元件相邻的位线，以提供跨磁阻元件堆叠的读取电流，并且两个高度导电的底部电极重叠并电接触外部的SHE-金属层的顶部 并提供双向旋转霍尔效应记录电流，并因此切换记录层的磁化。 因此，通过施加低写入电流，记录层的磁化可以容易地根据沿着SHE-金属层的电流的方向切换或反向。

公开(公告)号：US20160146906A1

公开(公告)日：2016-05-26

申请号：US14943493

申请日：2015-11-17

Applicant: SEIKO INSTRUMENTS INC.

Inventor： Satoshi SUZUKI ,  Mika EBIHARA ,  Takaaki HIOKA

IPC: G01R33/07

CPC classification number: G01R33/077 ,  G01R33/07 ,  G01R33/072 ,  G01R33/075 ,  H01L43/06 ,  H01L43/065 ,  H01L43/12 ,  H01L43/14

Abstract: Provided is a highly sensitive vertical Hall element without increasing a chip area. In the vertical Hall element, trenches each filled with an insulating film are formed between a first current supply end and voltage output ends, respectively, which enables the restriction of current flow into the voltage output ends to increase the ratio of a current component perpendicular to a substrate surface, resulting in enhanced sensitivity.

Abstract translation: 提供高灵敏度的垂直霍尔元件，而不增加芯片面积。 在垂直霍尔元件中，分别在第一电流供给端和电压输出端之间形成各自填充有绝缘膜的沟槽，其能够限制电流流入电压输出端，以增加垂直于 衬底表面，导致增强的灵敏度。

公开(公告)号：US20160133829A1

公开(公告)日：2016-05-12

申请号：US14982128

申请日：2015-12-29

Applicant: Intel Corporation

Inventor： Charles C. Kuo ,  Kaan Oguz ,  Brian S. Doyle ,  Elijah V. Karpov ,  Roksana Golizadeh Mojarad ,  David L. Kencke ,  Robert S. Chau

IPC: H01L43/10

CPC classification number: H01L43/10 ,  G11C11/161 ,  H01F10/3286 ,  H01F10/329 ,  H01L43/065 ,  H01L43/08 ,  H01L43/12 ,  H01L43/14

Abstract: An embodiment includes a magnetic tunnel junction (MTJ) including a free magnetic layer, a fixed magnetic layer, and a tunnel barrier between the free and fixed layers; the tunnel barrier directly contacting a first side of the free layer; and an oxide layer directly contacting a second side of the free layer; wherein the tunnel barrier includes an oxide and has a first resistance-area (RA) product and the oxide layer has a second RA product that is lower than the first RA product. The MTJ may be included in a perpendicular spin torque transfer memory. The tunnel barrier and oxide layer form a memory having high stability with an RA product not substantively higher than a less table memory having a MTJ with only a single oxide layer. Other embodiments are described herein.

Abstract translation: 实施例包括在自由层和固定层之间包括自由磁性层，固定磁性层和隧道势垒的磁性隧道结（MTJ）; 所述隧道势垒直接接触所述自由层的第一侧; 和直接接触自由层的第二面的氧化物层; 其中所述隧道势垒包括氧化物并且具有第一电阻区域（RA）产物，并且所述氧化物层具有低于所述第一RA产物的第二RA产物。 MTJ可以包括在垂直旋转扭矩传递存储器中。 隧道势垒和氧化物层形成具有高稳定性的存储器，RA产物实质上高于具有仅具有单一氧化物层的MTJ的较少表存储器。 本文描述了其它实施例。