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公开(公告)号：US11789097B2
公开(公告)日：2023-10-17
申请号：US17246820
申请日：2021-05-03
Applicant: Infineon Technologies AG
Inventor： Dirk Hammerschmidt , Armin Satz , Juergen Zimmer
CPC classification number: G01R33/093 , H01F10/3254 , H01F10/3272 , H01F41/304 , H01F41/308 , H10N50/10 , H10N50/85
Abstract: A method for generating a closed flux magnetization pattern of a predetermined rotational direction in a magnetic reference layer of a magnetic layer stack is provided. The method includes applying an external magnetic field in a predetermined direction to the magnetic layer stack causing magnetic saturation of the magnetic reference layer and of a pinned layer of the magnetic layer stack; and reducing the external magnetic field to form a first closed flux magnetization pattern in the magnetic reference layer and a second closed flux magnetization pattern in the pinned layer.
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公开(公告)号：US20230034717A1
公开(公告)日：2023-02-02
申请号：US17963288
申请日：2022-10-11
Applicant: Infineon Technologies AG
Inventor： Juergen Zimmer , Wolfgang Raberg
IPC: G01R33/09
Abstract: Some embodiments relate to a magnetoresistive sensor element comprising a magnetoresistive strip. The magnetoresistive strip includes a first linear segment, and a second linear segment arranged in series with the first linear segment. The second linear segment adjoins the first linear segment at a first inner corner corresponding to a first obtuse angle having a first magnitude. The magnetoresistive strip also includes a third linear segment arranged in series with the first and second linear segments, and a fourth linear segment arranged in series with the first, second, and third linear segments. The fourth linear segment adjoins the third linear segment at a second inner corner corresponding to a second obtuse angle having a second magnitude. Te second magnitude differs from the first magnitude.
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公开(公告)号：US20190316935A1
公开(公告)日：2019-10-17
申请号：US16456905
申请日：2019-06-28
Applicant: Infineon Technologies AG
Inventor： Franz Jost , Harald Witschnig , Juergen Zimmer
Abstract: A sensor circuit includes a plurality of half-bridge sensor circuits. The sensor circuit includes a sensor output value determination circuit configured to determine a sensor output value. The sensor circuit further includes an error determination circuit configured to generate an error signal based on a first half-bridge sensor signal and a second half-bridge sensor signal. The sensor circuit further includes a control circuit configured to control a selection of one of the first half-bridge sensor circuit and the second half-bridge sensor circuit for providing one of the first half-bridge sensor signal and the second half-bridge sensor signal to the sensor output value determination circuit to determine the sensor output value.
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公开(公告)号：US09952292B2
公开(公告)日：2018-04-24
申请号：US15078429
申请日：2016-03-23
Applicant: Infineon Technologies AG
Inventor： Wolfgang Granig , Juergen Zimmer
CPC classification number: G01R33/091 , G01R33/0047 , G01R33/09 , G01R33/093
Abstract: Sensing systems can include magnetoresistive sensors suitable for both angle and field strength sensing. The system can include one or more magnetoresistive sensors that can sense one or more aspects or characteristics of a magnetic field. The system can include a first magnetoresistive sensor that is configured to sense the magnetic field angle or rotation and a second sensor configured to sense the strength or magnitude of the magnetic field. The system can determine an operation state of the system based on the sensed characteristic(s) of the magnetic field. For example, if the system determines that the sensed magnetic field strength is below a threshold value, the system can determine that it may be operating in an error state. In this example, the system can generate an alarm signal based on the determined error state.
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公开(公告)号：US09812496B2
公开(公告)日：2017-11-07
申请号：US15391111
申请日：2016-12-27
Applicant: Infineon Technologies AG
Inventor： Stefan Kolb , Klemens Pruegl , Juergen Zimmer
IPC: H01L43/12 , H01L27/22 , H01L23/528 , H01L23/522 , H01L43/02 , H01L23/552 , H01L43/08 , G01R33/09
CPC classification number: H01L27/22 , G01R33/07 , G01R33/09 , G01R33/093 , G01R33/098 , H01L23/5226 , H01L23/528 , H01L23/552 , H01L43/02 , H01L43/04 , H01L43/06 , H01L43/08 , H01L43/12 , H01L43/14
Abstract: In the method of manufacturing a magnetoresistive sensor module, at first a composite arrangement out of a semiconductor substrate and a metal-insulator arrangement is provided, wherein a semiconductor circuit arrangement is integrated adjacent to a main surface of the semiconductor substrate into the same, wherein the metal-insulator arrangement is arranged on the main surface of the semiconductor substrate and comprises a structured metal sheet and insulation material at least partially surrounding the structured metal sheet, wherein the structured metal sheet is electrically connected to the semiconductor circuit arrangement. Then, a magnetoresistive sensor structure is applied onto a surface of the insulation material of the composite arrangement, and finally an electrical connection between the magnetoresistive sensor structure and the structured metal sheet is established, so that the magnetoresistive sensor structure is connected to the integrated circuit arrangement.
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Patent Agency Ranking
公开(公告)号：US09678176B2
公开(公告)日：2017-06-13
申请号：US15241632
申请日：2016-08-19
Applicant: Infineon Technologies AG
Inventor： Juergen Zimmer
CPC classification number: G01R33/096 , B82Y25/00 , G01B7/30 , G01D5/145 , G01R33/0052 , G01R33/09 , G01R33/091 , G01R33/093 , G01R33/098 , H01L43/08 , Y10T29/49002 , Y10T29/49117
Abstract: Embodiments relate to xMR sensors, sensor elements and structures, and methods. In an embodiment, a sensor element comprises a non-elongated xMR structure; and a plurality of contact regions formed on the xMR structure spaced apart from one another such that a non-homogeneous current direction and current density distribution are induced in the xMR structure when a voltage is applied between the plurality of contact regions.
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公开(公告)号：US09606197B2
公开(公告)日：2017-03-28
申请号：US14830195
申请日：2015-08-19
Applicant: Infineon Technologies AG
Inventor： Juergen Zimmer , Klemens Pruegl , Olaf Kuehn , Andreas Strasser , Ralf-Rainer Schledz , Norbert Thyssen
CPC classification number: G01R33/0052 , G01R33/09 , G01R33/093 , G01R33/096 , G01R33/098 , H01L27/22 , H01L43/02 , H01L43/08 , H01L43/12
Abstract: Embodiments relate to xMR sensors having very high shape anisotropy. Embodiments also relate to novel structuring processes of xMR stacks to achieve very high shape anisotropies without chemically affecting the performance relevant magnetic field sensitive layer system while also providing comparatively uniform structure widths over a wafer, down to about 100 nm in embodiments. Embodiments can also provide xMR stacks having side walls of the performance relevant free layer system that are smooth and/or of a defined lateral geometry which is important for achieving a homogeneous magnetic behavior over the wafer.
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公开(公告)号：US09581661B2
公开(公告)日：2017-02-28
申请号：US14969378
申请日：2015-12-15
Applicant: Infineon Technologies AG
Inventor： Juergen Zimmer
CPC classification number: G01R33/09 , G01R33/0052 , H05K3/30 , Y10T29/4913
Abstract: An XMR-sensor and method for manufacturing the XMR-Sensor are provided. The XMR-sensor includes a substrate, a first contact, a second contact and an XMR-structure. The substrate includes a first main surface area and a second main surface area. The first contact is arranged at the first main surface area and the second contact is arranged at the second main surface area. The XMR-structure extends from the first contact to the second contact such that an XMR-plane of the XMR-structure is arranged along a first direction perpendicular to the first main surface area or the second main surface area.
Abstract translation: 提供了一种用于制造XMR传感器的XMR传感器和方法。 XMR传感器包括基板，第一触点，第二触点和XMR结构。 基板包括第一主表面区域和第二主表面区域。 第一触点设置在第一主表面区域，第二触点设置在第二主表面区域。 XMR结构从第一接触延伸到第二接触，使得XMR结构的XMR平面沿着垂直于第一主表面区域或第二主表面区域的第一方向排列。
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公开(公告)号：US09423472B2
公开(公告)日：2016-08-23
申请号：US14972648
申请日：2015-12-17
Applicant: Infineon Technologies AG
Inventor： Stefan Kolb , Klemens Pruegl , Juergen Zimmer
CPC classification number: H01L27/22 , G01R33/07 , G01R33/09 , G01R33/093 , G01R33/098 , H01L23/5226 , H01L23/528 , H01L23/552 , H01L43/02 , H01L43/04 , H01L43/06 , H01L43/08 , H01L43/12 , H01L43/14
Abstract: In the method of manufacturing a magnetoresistive sensor module, at first a composite arrangement out of a semiconductor substrate and a metal-insulator arrangement is provided, wherein a semiconductor circuit arrangement is integrated adjacent to a main surface of the semiconductor substrate into the same, wherein the metal-insulator arrangement is arranged on the main surface of the semiconductor substrate and comprises a structured metal sheet and insulation material at least partially surrounding the structured metal sheet, wherein the structured metal sheet is electrically connected to the semiconductor circuit arrangement. Then, a magnetoresistive sensor structure is applied onto a surface of the insulation material of the composite arrangement, and finally an electrical connection between the magnetoresistive sensor structure and the structured metal sheet is established, so that the magnetoresistive sensor structure is connected to the integrated circuit arrangement.
Abstract translation: 在制造磁阻传感器模块的方法中，首先提供从半导体衬底和金属 - 绝缘体布置中的复合布置，其中半导体电路布置与半导体衬底的主表面相邻地集成在其中，其中 金属绝缘体布置在半导体衬底的主表面上并且包括结构化金属片和至少部分地围绕结构化金属片的绝缘材料，其中结构化金属片电连接到半导体电路装置。 然后，将磁阻传感器结构施加到复合布置的绝缘材料的表面上，最后建立磁阻传感器结构和结构金属片之间的电连接，使得磁阻传感器结构连接到集成电路 安排。
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公开(公告)号：US20160109536A1
公开(公告)日：2016-04-21
申请号：US14972648
申请日：2015-12-17
Applicant: Infineon Technologies AG
Inventor： Stefan Kolb , Klemens Pruegl , Juergen Zimmer
CPC classification number: H01L27/22 , G01R33/07 , G01R33/09 , G01R33/093 , G01R33/098 , H01L23/5226 , H01L23/528 , H01L23/552 , H01L43/02 , H01L43/04 , H01L43/06 , H01L43/08 , H01L43/12 , H01L43/14
Abstract: In the method of manufacturing a magnetoresistive sensor module, at first a composite arrangement out of a semiconductor substrate and a metal-insulator arrangement is provided, wherein a semiconductor circuit arrangement is integrated adjacent to a main surface of the semiconductor substrate into the same, wherein the metal-insulator arrangement is arranged on the main surface of the semiconductor substrate and comprises a structured metal sheet and insulation material at least partially surrounding the structured metal sheet, wherein the structured metal sheet is electrically connected to the semiconductor circuit arrangement. Then, a magnetoresistive sensor structure is applied onto a surface of the insulation material of the composite arrangement, and finally an electrical connection between the magnetoresistive sensor structure and the structured metal sheet is established, so that the magnetoresistive sensor structure is connected to the integrated circuit arrangement.
Abstract translation: 在制造磁阻传感器模块的方法中，首先提供从半导体衬底和金属 - 绝缘体布置中的复合布置，其中半导体电路布置与半导体衬底的主表面相邻地集成在其中，其中 金属绝缘体布置在半导体衬底的主表面上并且包括结构化金属片和至少部分地围绕结构化金属片的绝缘材料，其中结构化金属片电连接到半导体电路装置。 然后，将磁阻传感器结构施加到复合布置的绝缘材料的表面上，最后建立磁阻传感器结构和结构金属片之间的电连接，使得磁阻传感器结构连接到集成电路 安排。
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