Abstract:
An objective lens system having a high numerical aperture, a large working distance, and low optical aberrations over a wide spectral band of wavelengths is disclosed. The objective lens system includes a first lens group, a second lens group, and a third lens group. The first lens group includes first and second positive meniscus lenses that are positioned at a distance from each other along an optical axis of the objective lens system. The distance may be dependent on a focal length of the objective lens system. The second lens group includes first and second meniscus lenses and a bi-convex lens. The third lens group includes a bi-concave lens and a doublet lens.
Abstract:
A system (300) for supporting an exchangeable object (302) can include a movable structure (304) and an object holder (306) configured to be movable relative to the movable structure. The object holder can be configured to hold the exchangeable object. The system can also include a first actuator assembly (308) and second actuator assembly (316). The first actuator assembly can be configured to apply a force to the object holder to translate the exchangeable object generally along a plane. The second actuator assembly can be configured to apply a bending moment to the object holder. The exchangeable object can be a patterning device of a lithographic apparatus.
Abstract:
A lithographic method is disclosed that includes, on a substrate provided with a layer of a resist and a further layer of a material provided on the layer of resist, providing a pattern in the further layer, the pattern defining a space via which an area of the layer of resist may be exposed to radiation, a distance between features of the pattern defining the space, and exposing the layer of resist to radiation having a wavelength greater than the distance between features of the pattern defining the space, such that near-field radiation is generated which propagates into and exposes an area of the resist.
Abstract:
A system and method that bends a reticle and senses a curvature of a bent reticle in real-time. The system includes movable reticle stage, reticle vacuum clamps, sensor systems, and reticle bender. The reticle bender comprises piezo actuators. The sensor systems comprises measurement targets and corresponding sensors. The sensors are attached to the movable reticle stage and the measurement targets are attached to the reticle clamps, the reticle bender, or on reticle surfaces. The system is configured to determine a width of the reticle or distance between measurement targets at opposing ends of the reticle, measure a first rotational angle at a first end of the reticle, and measure a second local rotational angle at a second end of the reticle that is opposite to the first end. Based on the width or distance and the first and second angles, a field curvature of the reticle is determined.
Abstract:
An apparatus to measure the position of a mark, the apparatus including an objective lens to direct radiation on a mark using radiation supplied by an illumination arrangement; an optical arrangement to receive radiation diffracted and specularly reflected by the mark, wherein the optical arrangement is configured to provide a first image and a second image, the first image being formed by coherently adding specularly reflected radiation and positive diffraction order radiation and the second image being formed by coherently adding specularly reflected radiation and negative diffraction order radiation; and a detection arrangement to detect variation in an intensity of radiation of the first and second images and to calculate a position of the mark in a direction of measurement therefrom.
Abstract:
A compact, self-contained holographic and interferometric apparatus and methods for eliminating vibration, including methods for eliminating relative displacement and vibration errors present in object and reference beam paths, are disclosed. The self-contained apparatus (600) includes an illuminated object (302) that scatters light and an objective lens (304) to form an object beam (350). The self-contained apparatus also includes a reference beam forming lens group (308) that forms a reference beam (352) from a portion of the object beam that passes through a pupil plane (306) of the objective lens (304). The object beam and the reference beam are propagated along a shared optical path, which eliminates relative displacement and vibration errors. The self-contained apparatus includes an image plane (316) where the object beam and reference beam are recombined to create an interference pattern, which is detected and analyzed. Methods for eliminating the instability, using the self-contained apparatus, are disclosed.
Abstract:
A system and method of manufacturing a semiconductor device lithographically and an article of manufacture involving a lithographic double patterning process having a dye added to either the first or second lithographic pattern are provided. The dye is used to detect the location of the first lithographic pattern and to directly align the second lithographic pattern to it. The dye may be fluorescent, luminescent, absorbent, or reflective at a specified wavelength or a given wavelength band. The wavelength may correspond to the wavelength of an alignment beam. The dye allows for detection of the first lithographic pattern even when it is over coated with a radiation sensitive-layer (e.g., resist).
Abstract:
A lithographic apparatus has an alignment system including a radiation source configured to convert narrow-band radiation into continuous, flat and broad-band radiation. An acoustically tunable narrow pass-band filter filters the broad-band radiation into narrow-band linearly polarized radiation. The narrow-band radiation may be focused on alignment targets of a wafer so as to enable alignment of the wafer. In an embodiment, the filter is configured to modulate an intensity and wavelength of radiation produced by the radiation source and to have multiple simultaneous pass-bands. The radiation source generates radiation that has high spatial coherence and low temporal coherence.
Abstract:
A lithographic apparatus can include a component and a positioning system operatively coupled and configured to move the component along a first axis. The positioning system can be configured to measure a position of the component along a second axis or a third axis. The positioning system can also be configured to control movement of the component so as to compensate for an effect of eigenmode coupling between the movement of the component along the first axis and the measured position of the component along the second axis or the third axis. In some embodiments, the component is a reticle stage or a wafer stage.
Abstract:
A method utilizing a lithography system comprises a lithography patterning chamber, a wafer exchange chamber separated from the lithography patterning chamber by a first gate valve, and at least one alignment load-lock separated from the wafer exchange chamber by a second gate valve. The alignment load-lock includes an alignment stage that aligns a wafer during pump-down. The alignment load-lock can be uni-directional or bi-directional. The lithography system can include one or multiple alignment load-locks.