Invention Grant
US08980724B2 Alignment target contrast in a lithographic double patterning process
有权
光刻双重图案化工艺中的对准目标对比度
- Patent Title: Alignment target contrast in a lithographic double patterning process
- Patent Title (中): 光刻双重图案化工艺中的对准目标对比度
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Application No.: US14202835Application Date: 2014-03-10
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Publication No.: US08980724B2Publication Date: 2015-03-17
- Inventor: Harry Sewell , Mircea Dusa , Richard Johannes Franciscus Van Haren , Manfred Gawein Tenner , Maya Angelova Doytcheva
- Applicant: ASML Holding N.V. , ASML Netherlands B.V.
- Applicant Address: NL Veldhoven NL Veldhoven
- Assignee: ASML Holding N.V.,ASML Netherlands B.V.
- Current Assignee: ASML Holding N.V.,ASML Netherlands B.V.
- Current Assignee Address: NL Veldhoven NL Veldhoven
- Agency: Sterne, Kessler, Goldstein & Fox P.L.L.C.
- Main IPC: H01L21/76
- IPC: H01L21/76 ; G03F9/00 ; G03F7/00 ; G03F7/105 ; G03F7/20 ; H01L21/027 ; H01L21/3213
Abstract:
A system and method of manufacturing a semiconductor device lithographically and an article of manufacture involving a lithographic double patterning process having a dye added to either the first or second lithographic pattern are provided. The dye is used to detect the location of the first lithographic pattern and to directly align the second lithographic pattern to it. The dye may be fluorescent, luminescent, absorbent, or reflective at a specified wavelength or a given wavelength band. The wavelength may correspond to the wavelength of an alignment beam. The dye allows for detection of the first lithographic pattern even when it is over coated with a radiation sensitive-layer (e.g., resist).
Public/Granted literature
- US20140192333A1 Alignment Target Contrast in a Lithographic Double Patterning Process Public/Granted day:2014-07-10
Information query
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