公开(公告)号：US20150219438A1

公开(公告)日：2015-08-06

申请号：US14427287

申请日：2013-09-20

Applicant: ASML Netherlands B.V. ,  ASML Holding N.V.

Inventor： Arie Jeffrey Den Boef ,  Justin Lloyd Kreuzer ,  Simon Gijsbert Josephus Mathijssen ,  Gerrit Johannes Nijmeijer ,  J. Christian Swindal ,  Patricius Aloysius Jacobus Tinnemans ,  Richard Johannes Franciscus Van Haren

IPC: G01B11/00 ,  G03F7/20 ,  H01L21/66

CPC classification number: G01B11/002 ,  G03F7/70775 ,  G03F9/7003 ,  G03F9/7049 ,  G03F9/7088 ,  H01L22/12

Abstract: An apparatus to measure the position of a mark, the apparatus including an objective lens to direct radiation on a mark using radiation supplied by an illumination arrangement; an optical arrangement to receive radiation diffracted and specularly reflected by the mark, wherein the optical arrangement is configured to provide a first image and a second image, the first image being formed by coherently adding specularly reflected radiation and positive diffraction order radiation and the second image being formed by coherently adding specularly reflected radiation and negative diffraction order radiation; and a detection arrangement to detect variation in an intensity of radiation of the first and second images and to calculate a position of the mark in a direction of measurement therefrom.

Abstract translation: 一种用于测量标记位置的装置，该装置包括使用由照明装置提供的辐射将辐射引导到标记上的物镜; 接收由标记衍射并被镜面反射的辐射的光学装置，其中所述光学装置被配置为提供第一图像和第二图像，所述第一图像通过相干地添加镜面反射辐射和正衍射级辐射而形成，并且所述第二图像 通过相干地加入镜面反射辐射和负衍射级辐射形成; 以及检测装置，用于检测第一和第二图像的辐射强度的变化，并计算标记在测量方向上的位置。

公开(公告)号：US08980724B2

公开(公告)日：2015-03-17

申请号：US14202835

申请日：2014-03-10

Applicant: ASML Holding N.V. ,  ASML Netherlands B.V.

Inventor： Harry Sewell ,  Mircea Dusa ,  Richard Johannes Franciscus Van Haren ,  Manfred Gawein Tenner ,  Maya Angelova Doytcheva

IPC: H01L21/76 ,  G03F9/00 ,  G03F7/00 ,  G03F7/105 ,  G03F7/20 ,  H01L21/027 ,  H01L21/3213

CPC classification number: G03F9/7046 ,  G03F7/0035 ,  G03F7/105 ,  G03F7/70466 ,  G03F9/7076 ,  H01L21/0273 ,  H01L21/32139

Abstract: A system and method of manufacturing a semiconductor device lithographically and an article of manufacture involving a lithographic double patterning process having a dye added to either the first or second lithographic pattern are provided. The dye is used to detect the location of the first lithographic pattern and to directly align the second lithographic pattern to it. The dye may be fluorescent, luminescent, absorbent, or reflective at a specified wavelength or a given wavelength band. The wavelength may correspond to the wavelength of an alignment beam. The dye allows for detection of the first lithographic pattern even when it is over coated with a radiation sensitive-layer (e.g., resist).

Abstract translation: 提供光刻制造半导体器件的系统和方法以及涉及具有添加到第一或第二光刻图案上的染料的光刻双重图案化工艺的制品。 该染料用于检测第一光刻图案的位置，并将第二光刻图案直接对准。 染料可以是在指定波长或给定波长带处的荧光，发光，吸收或反射。 波长可对应于对准光束的波长。 染料允许检测第一光刻图案，即使当其涂覆有辐射敏感层（例如抗蚀剂）时。

公开(公告)号：US09506743B2

公开(公告)日：2016-11-29

申请号：US14427287

申请日：2013-09-20

Applicant: ASML Netherlands B.V. ,  ASML Holding N.V.

Inventor： Arie Jeffrey Den Boef ,  Justin Lloyd Kreuzer ,  Simon Gijsbert Josephus Mathijssen ,  Gerrit Johannes Nijmeijer ,  J. Christian Swindal ,  Patricius Aloysius Jacobus Tinnemans ,  Richard Johannes Franciscus Van Haren

IPC: G06K9/00 ,  G01B11/00 ,  G03F9/00 ,  G03F7/20 ,  H01L21/66

CPC classification number: G01B11/002 ,  G03F7/70775 ,  G03F9/7003 ,  G03F9/7049 ,  G03F9/7088 ,  H01L22/12

Abstract: An apparatus to measure the position of a mark, the apparatus including an objective lens to direct radiation on a mark using radiation supplied by an illumination arrangement; an optical arrangement to receive radiation diffracted and specularly reflected by the mark, wherein the optical arrangement is configured to provide a first image and a second image, the first image being formed by coherently adding specularly reflected radiation and positive diffraction order radiation and the second image being formed by coherently adding specularly reflected radiation and negative diffraction order radiation; and a detection arrangement to detect variation in an intensity of radiation of the first and second images and to calculate a position of the mark in a direction of measurement therefrom.

Abstract translation: 一种用于测量标记位置的装置，该装置包括使用由照明装置提供的辐射将辐射引导到标记上的物镜; 接收由标记衍射并被镜面反射的辐射的光学装置，其中所述光学装置被配置为提供第一图像和第二图像，所述第一图像通过相干地添加镜面反射辐射和正衍射级辐射而形成，并且所述第二图像 通过相干地加入镜面反射辐射和负衍射级辐射形成; 以及检测装置，用于检测第一和第二图像的辐射强度的变化，并计算标记在测量方向上的位置。

公开(公告)号：US11385550B2

公开(公告)日：2022-07-12

申请号：US16864456

申请日：2020-05-01

Applicant: ASML Netherlands B.V.

Inventor： Alexander Ypma ,  Jasper Menger ,  David Deckers ,  David Han ,  Adrianus Cornelis Matheus Koopman ,  Irina Lyulina ,  Scott Anderson Middlebrooks ,  Richard Johannes Franciscus Van Haren ,  Jochem Sebastiaan Wildenberg

IPC: G03F7/20 ,  G06F16/26 ,  G03F9/00

Abstract: In a lithographic process, product units such as semiconductor wafers are subjected to lithographic patterning operations and chemical and physical processing operations. Alignment data or other measurements are made at stages during the performance of the process to obtain object data representing positional deviation or other parameters measured at points spatially distributed across each unit. This object data is used to obtain diagnostic information by performing a multivariate analysis to decompose a set of vectors representing the units in the multidimensional space into one or more component vectors. Diagnostic information about the industrial process is extracted using the component vectors. The performance of the industrial process for subsequent product units can be controlled based on the extracted diagnostic information.

公开(公告)号：US11054813B2

公开(公告)日：2021-07-06

申请号：US15763834

申请日：2016-09-21

Applicant: ASML NETHERLANDS B.V.

Inventor： Alexander Ypma ,  David Frans Simon Deckers ,  Franciscus Godefridus Casper Bijnen ,  Richard Johannes Franciscus Van Haren ,  Weitian Kou

IPC: G05B19/418 ,  G03F7/20 ,  G03F9/00

Abstract: In a lithographic process in which a series of substrates are processed in different contexts, object data (such as performance data representing overlay measured on a set of substrates that have been processed previously) is received. Context data represents one or more parameters of the lithographic process that vary between substrates within the set. By principal component analysis or other statistical analysis of the performance data, the set of substrates are partitioned into two or more subsets. The first partitioning of the substrates and the context data are used to identify one or more relevant context parameters, being parameters of the lithographic process that are observed to correlate most strongly with the first partitioning. The lithographic apparatus is controlled for new substrates by reference to the identified relevant context parameters. Embodiments with feedback control and feedforward control are described.

公开(公告)号：US10691863B2

公开(公告)日：2020-06-23

申请号：US15769539

申请日：2016-09-26

Applicant: ASML NETHERLANDS B.V.

Inventor： Peter Ten Berge ,  Everhardus Cornelis Mos ,  Richard Johannes Franciscus Van Haren ,  Peter Hanzen Wardenier ,  Erik Jensen

IPC: G06F30/398 ,  G03F1/70 ,  G03F1/72 ,  G06F111/10

Abstract: A method including modeling high resolution patterning error information of a patterning process involving a patterning device in a patterning system using an error mathematical model, modeling a correction of the patterning error that can be made by a patterning device modification tool using a correction mathematical model, the correction mathematical model having substantially the same resolution as the error mathematical model, and determining modification information for modifying the patterning device using the patterning device modification tool by applying the correction mathematical model to the patterning error information modeled by the error mathematical model.

公开(公告)号：US10545410B2

公开(公告)日：2020-01-28

申请号：US16076743

申请日：2017-02-07

Applicant: ASML NETHERLANDS B.V.

Inventor： Hakki Ergun Cekli ,  Masashi Ishibashi ,  Leon Paul Van Dijk ,  Richard Johannes Franciscus Van Haren ,  Xing Lan Liu ,  Reiner Maria Jungblut ,  Cedric Marc Affentauschegg ,  Ronald Henricus Johannes Otten

IPC: G03B27/42 ,  G03F7/20 ,  G03F9/00

Abstract: A lithographic process includes clamping a substrate onto a substrate support, measuring positions across the clamped substrate, and applying a pattern to the clamped substrate using the positions measured. A correction is applied to the positioning of the applied pattern in localized regions of the substrate, based on recognition of a warp-induced characteristic in the positions measured across the substrate. The correction may be generated by inferring one or more shape characteristics of the warped substrate using the measured positions and other information. Based on the one or more inferred shape characteristics, a clamping model is applied to simulate deformation of the warped substrate in response to clamping. A correction is calculated based on the simulated deformation.

公开(公告)号：US10331043B2

公开(公告)日：2019-06-25

申请号：US15118440

申请日：2015-01-29

Applicant: ASML Netherlands B.V.

Inventor： Henricus Wilhelmus Maria Van Buel ,  Johannes Marcus Maria Beltman ,  Xing Lan Liu ,  Hendrik Jan Hidde Smilde ,  Richard Johannes Franciscus Van Haren

IPC: G03F7/20 ,  G01N21/93 ,  G01N21/956

Abstract: A method of devising a target arrangement, and associated target and reticle. The target includes a plurality of gratings, each grating having a plurality of substructures. The method includes: defining a target area; locating the substructures within the target area so as to form the gratings; and locating assist features at the periphery of the gratings, the assist features being configured to reduce measured intensity peaks at the periphery of the gratings. The method may include an optimization process including modelling a resultant image obtained by inspection of the target using a metrology process; and evaluating whether the target arrangement is optimized for detection using a metrology process.

公开(公告)号：US09291916B2

公开(公告)日：2016-03-22

申请号：US14613687

申请日：2015-02-04

Applicant: ASML Netherlands B.V.

Inventor： Stefan Cornelis Theodorus Van Der Sanden ,  Richard Johannes Franciscus Van Haren ,  Hubertus Johannes Gertrudus Simons ,  Remi Daniel Marie Edart ,  Xiuhong Wei ,  Irina Lyulina ,  Michael Kubis

IPC: G03F7/20 ,  G03F9/00

CPC classification number: G03F7/70616 ,  G03F7/70141 ,  G03F7/70633 ,  G03F9/7003 ,  G03F9/7088

Abstract: A substrate is loaded onto a substrate support of a lithographic apparatus, after which the apparatus measures locations of substrate alignment marks. These measurements define first correction information allowing the apparatus to apply a pattern at one or more desired locations on the substrate. Additional second correction information is used to enhance accuracy of pattern positioning, in particular to correct higher order distortions of a nominal alignment grid. The second correction information may be based on measurements of locations of alignment marks made when applying a previous pattern to the same substrate. The second correction information may alternatively or in addition be based on measurements made on similar substrates that have been patterned prior to the current substrate.

公开(公告)号：US11300889B2

公开(公告)日：2022-04-12

申请号：US17267974

申请日：2019-07-03

Applicant: ASML NETHERLANDS B.V.

Inventor： Leon Paul Van Dijk ,  Richard Johannes Franciscus Van Haren ,  Subodh Singh ,  Ilya Malakhovsky ,  Ronald Henricus Johannes Otten ,  Amandev Singh

IPC: G03F7/20

Abstract: Methods and apparatuses for determining in-plane distortion (IPD) across a substrate having a plurality of patterned regions. A method includes obtaining intra-region data indicative of a local stress distribution across one of the plurality of patterned regions; determining, based on the intra-region data, inter-region data indicative of a global stress distribution across the substrate; and determining, based on the inter-region data, the IPD across the substrate.