知搜-全球专利检索

  1. Login
  2. Sign Up

Search Results

158 records (took 0.041 seconds)

    Mark position measuring apparatus and method, lithographic apparatus and device manufacturing method
    1.
    发明授权
    Mark position measuring apparatus and method, lithographic apparatus and device manufacturing method 有权
    标记位置测量装置和方法，光刻设备和装置制造方法

    公开(公告)号：US09551939B2

    公开(公告)日：2017-01-24

    申请号：US14428565

    申请日：2013-09-23

    Applicant: ASML Netherlands B.V. ,  ASML Holding N.V.

    Inventor： Simon Gijsbert Josephus Mathijssen ,  Arie Jeffrey Den Boef ,  Stanley Drazkiewicz ,  Justin Lloyd Kreuzer ,  Gerrit Johannes Nijmeijer

    IPC: G03B27/72 ,  G03F7/20 ,  G01B11/14

    CPC classification number: G03F7/70141 ,  G01B11/14 ,  G03F9/7069 ,  G03F9/7088

    Abstract: An apparatus to measure the position of a mark, the apparatus including an illumination arrangement to direct radiation across a pupil of the apparatus, the illumination arrangement including an illumination source to provide multiple-wavelength radiation of substantially equal polarization and a wave plate to alter the polarization of the radiation in dependency of the wavelength, such that radiation of different polarization is supplied; an objective to direct radiation on the mark using the radiation supplied by the illumination arrangement while scanning the radiation across the mark in a scanning direction; a radiation processing element to process radiation that is diffracted by the mark and received by the objective; and a detection arrangement to detect variation in an intensity of radiation output by the radiation processing element during the scanning and to calculate from the detected variation a position of the mark in at least a first direction of measurement.

    Abstract translation: 一种用于测量标记位置的装置，该装置包括用于将辐射引导到装置的光瞳上的照明装置，所述照明装置包括照明源，以提供基本上相等偏振的多波长辐射和波片，以改变 依赖于波长的辐射的极化，使得提供不同极化的辐射; 使用由照射装置提供的辐射在扫描方向上扫描横过标记的辐射来将辐射引导到标记上的目的; 辐射处理元件，用于处理由所述标记衍射并由所述物镜接收的辐射; 以及检测装置，用于检测在扫描期间由辐射处理元件输出的辐射强度的变化，并且根据检测到的变化来计算至少第一测量方向上的标记的位置。

    Phase modulators in alignment to decrease mark size
    2.
    发明授权
    Phase modulators in alignment to decrease mark size 有权

    公开(公告)号：US11803130B2

    公开(公告)日：2023-10-31

    申请号：US17633884

    申请日：2020-08-05

    Applicant: ASML Netherlands B.V. ,  ASML Holding N.V.

    Inventor： Franciscus Godefridus Casper Bijnen ,  Muhsin Eralp ,  Simon Reinald Huisman ,  Arie Jeffrey Den Boef

    IPC: G03F9/00

    CPC classification number: G03F9/7049 ,  G03F9/7069 ,  G03F9/7088

    Abstract: An alignment apparatus includes an illumination system configured to direct one or more illumination beams towards an alignment target and receive the diffracted beams from the alignment target. The alignment apparatus also includes a self-referencing Interferometer configured to generate two diffraction sub-beams, wherein the two diffraction sub-beams are orthogonally polarized, rotated 180 degrees with respect to each other around an alignment axis, and spatially overlapped. The alignment apparatus further includes a beam analyzer configured to generate interference between the overlapped components of the diffraction sub-beams and produce two orthogonally polarized optical branches, and a detection system configured to determine a position of the alignment target based on light intensity measurement of the optical branches, wherein the measured light intensity is temporally modulated by a phase modulator.

    Alignment sensor and lithographic apparatus
    4.
    发明授权
    Alignment sensor and lithographic apparatus 有权

    公开(公告)号：US09857703B2

    公开(公告)日：2018-01-02

    申请号：US15328194

    申请日：2015-07-07

    Applicant: ASML Netherlands B.V. ,  ASML Holding N.V.

    Inventor： Simon Gijsbert Josephus Mathijssen ,  Arie Jeffrey Den Boef ,  Justin Lloyd Kreuzer ,  Patricius Aloysius Jacobus Tinnemans

    IPC: G03B27/54 ,  G03F9/00

    CPC classification number: G03F9/7088 ,  G03F9/7065 ,  G03F9/7069

    Abstract: An alignment sensor for a lithographic apparatus is arranged and constructed to measure an alignment of a movable part of the lithographic apparatus in respect of a stationary part of the lithographic apparatus. The alignment sensor comprises a light source configured to generate a pulse train at a optical wavelength and a pulse repetition frequency, a non-linear optical element, arranged in an optical propagation path of the pulse train, the non-linear optical element configured to transform the pulse train at the optical wavelength into a transformed pulse train in an optical wavelength range, an optical imaging system configured to project the transformed pulse train onto an alignment mark comprising a diffraction grating; a detector to detect a diffraction pattern as diffracted by the diffraction grating, and a data processing device configured to derive alignment data from the detected diffraction pattern as detected by the detector.

    Tunable wavelength illumination system
    6.
    发明授权
    Tunable wavelength illumination system 有权
    可调波长照明系统

    公开(公告)号：US08730476B2

    公开(公告)日：2014-05-20

    申请号：US13898973

    申请日：2013-05-21

    Applicant: ASML Holding N.V. ,  ASML Netherlands B.V.

    Inventor： Arie Jeffrey Den Boef ,  Earl William Ebert ,  Harry Sewell ,  Keith Andersen ,  Sanjeev K. Singh

    IPC: G01B11/00

    CPC classification number: G03F7/70141 ,  G01B11/14 ,  G02F1/116 ,  G03F7/70191 ,  G03F9/7065

    Abstract: A lithographic apparatus has an alignment system including a radiation source configured to convert narrow-band radiation into continuous, flat and broad-band radiation. An acoustically tunable narrow pass-band filter filters the broad-band radiation into narrow-band linearly polarized radiation. The narrow-band radiation may be focused on alignment targets of a wafer so as to enable alignment of the wafer. In an embodiment, the filter is configured to modulate an intensity and wavelength of radiation produced by the radiation source and to have multiple simultaneous pass-bands. The radiation source generates radiation that has high spatial coherence and low temporal coherence.

    Abstract translation: 光刻设备具有对准系统，其包括被配置为将窄带辐射转换成连续，平坦和宽带辐射的辐射源。 声可调窄带通滤波器将宽带辐射滤波成窄带线偏振辐射。 窄带辐射可以聚焦在晶片的对准目标上，以便能够对准晶片。 在一个实施例中，滤波器被配置为调制由辐射源产生的辐射的强度和波长并且具有多个同时的通带。 辐射源产生具有高空间相干性和低时间相干性的辐射。

    Position Measuring Method, Position Measuring Apparatus, Lithographic Apparatus and Device Manufacturing Method, Optical Element
    9.
    发明申请
    Position Measuring Method, Position Measuring Apparatus, Lithographic Apparatus and Device Manufacturing Method, Optical Element 有权
    位置测量方法，位置测量装置，平版印刷设备和装置制造方法，光学元件

    公开(公告)号：US20150109624A1

    公开(公告)日：2015-04-23

    申请号：US14391304

    申请日：2013-02-07

    Applicant: ASML Holding N.V. ,  ASML Netherlands B.V.

    Inventor： Justin Lloyd Kreuzer ,  Arie Jeffrey Den Boef ,  Simon Josephus Mathijssen

    IPC: G01B11/14 ,  G01B9/02

    CPC classification number: G01B11/14 ,  F25D3/06 ,  F25D11/003 ,  F25D23/006 ,  G01B9/0207 ,  G03F7/70108 ,  G03F9/7069 ,  G03F9/7084 ,  G03F9/7088

    Abstract: An apparatus (AS) measures positions of marks (202) on a lithographic substrate (W). An illumination arrangement (940, 962, 964) provides off-axis radiation from at least first and second regions. The first and second source regions are diametrically opposite one another with respect to an optical axis (O) and are limited in angular extent. The regions may be small spots selected according to a direction of periodicity of a mark being measured, or larger segments. Radiation at a selected pair of source regions can be generated by supplying radiation at a single source feed position to a self-referencing interferometer. A modified half wave plate is positioned downstream of the interferometer, which can be used in the position measuring apparatus. The modified half wave plate has its fast axis in one part arranged at 45° to the fast axis in another part diametrically opposite.

    Abstract translation: 设备（AS）测量光刻基板（W）上的标记（202）的位置。 照明装置（940，962,964）提供至少第一和第二区域的离轴辐射。 第一和第二源极区域相对于光轴线（O）彼此径向相对并且在角度范围内受到限制。 这些区域可以是根据正被测量的标记的周期方向或较大的段选择的小点。 可以通过将单个源馈送位置处的辐射提供给自参考干涉仪来产生所选择的一对源区域处的辐射。 修改后的半波片位于干涉仪的下游，可用于位置测量装置。 修改后的半波片的一个部分的快轴与另一部分直径相对的快轴成45度。

    On chip sensor for wafer overlay measurement
    10.
    发明授权
    On chip sensor for wafer overlay measurement 有权

    公开(公告)号：US12066762B2

    公开(公告)日：2024-08-20

    申请号：US17637942

    申请日：2020-08-05

    Applicant: ASML Holding N.V. ,  ASML Netherlands B.V.

    Inventor： Mohamed Swillam ,  Stephen Roux ,  Tamer Mohamed Tawfik Ahmed Mohamed Elazhary ,  Arie Jeffrey Den Boef

    IPC: G03F7/20 ,  G02B6/122 ,  G02B26/08 ,  G03F7/00

    CPC classification number: G03F7/70633 ,  G02B6/1225 ,  G02B26/0833

    Abstract: A sensor apparatus includes a sensor chip, an illumination system, a first optical system, a second optical system, and a detector system. The illumination system is coupled to the sensor chip and transmits an illumination beam along an illumination path. The first optical system is coupled to the sensor chip and includes a first integrated optic to configure and transmit the illumination beam toward a diffraction target on a substrate, disposed adjacent to the sensor chip, and generate a signal beam including diffraction order sub-beams generated from the diffraction target. The second optical system is coupled to the sensor chip and includes a second integrated optic to collect and transmit the signal beam from a first side to a second side of the sensor chip. The detector system is configured to measure a characteristic of the diffraction target based on the signal beam transmitted by the second optical system.

Patent Agency Ranking