公开(公告)号：US20060066406A1

公开(公告)日：2006-03-30

申请号：US11209691

申请日：2005-08-24

Applicant: Tomonori Tanoue ,  Masami Ohnishi

Inventor： Tomonori Tanoue ,  Masami Ohnishi

IPC: H03F3/04

CPC classification number: H03F1/26 ,  H01L2924/0002 ,  H03F1/42 ,  H03F3/04 ,  H03F3/195 ,  H03F2200/36 ,  H01L2924/00

Abstract: The invention provides a wide-band, low-noise, and small-sized high frequency power amplifier that has small temperature dependence of the gain and is excellent in input matching. A parallel circuit consisting of a resistor whose resistance depends strongly on temperature and a conventional resistor is inserted serially into a signal path in an input matching circuit of an amplification unit, and resistances of the resistors are set to appropriate values, for example, about ⅔ times an input impedance of the amplification unit.

公开(公告)号：US06958656B2

公开(公告)日：2005-10-25

申请号：US10878308

申请日：2004-06-29

Applicant: Kiichi Yamashita ,  Tomonori Tanoue ,  Shizuo Kondo

Inventor： Kiichi Yamashita ,  Tomonori Tanoue ,  Shizuo Kondo

IPC: H03G3/10 ,  H03G7/00 ,  H04B1/04 ,  H04B7/26 ,  H03G3/30

CPC classification number: H03F1/02 ,  H03F1/30 ,  H03F3/21 ,  H03G7/001 ,  H03G7/06

Abstract: The present invention provides a power amplifier module featuring that: its output power characteristic smoothly changes as the input control voltage changes; and its control sensitivity is stable over a wide dynamic range. By same means, idling current for gain setting is supplied to a single amplifier element or all of multiple stages of amplifier elements of the power amplifier module. By making this idling current behave so as to exponentially change, relative to input control voltage, the invention enables output power control proportional to the input control voltage.

Abstract translation: 本发明提供一种功率放大器模块，其特征在于：其输出功率特性随着输入控制电压的变化而平滑地变化; 其控制灵敏度在宽动态范围内稳定。 通过同样的方式，用于增益设定的空载电流被提供给功率放大器模块的单个放大器元件或放大器元件的多个级的全部。 通过使该怠速电流相对于输入控制电压发生指数变化，本发明实现与输入控制电压成比例的输出功率控制。

公开(公告)号：US06771128B1

公开(公告)日：2004-08-03

申请号：US09692182

申请日：2000-10-20

Applicant: Kiichi Yamashita ,  Tomonori Tanoue ,  Shizuo Kondo

Inventor： Kiichi Yamashita ,  Tomonori Tanoue ,  Shizuo Kondo

IPC: H03G330

CPC classification number: H03F1/02 ,  H03F1/30 ,  H03F3/21 ,  H03G7/001 ,  H03G7/06

Abstract: The present invention provides a power amplifier module featuring that: its output power characteristic smoothly changes as the input control voltage changes; and its control sensitivity is stable over a wide dynamic range. By same means, idling current for gain setting is supplied to a single amplifier element or all of multiple stages of amplifier elements of the power amplifier module. By making this idling current behave so as to exponentially change, relative to input control voltage, the invention enables output power control proportional to the input control voltage.

公开(公告)号：US06674323B2

公开(公告)日：2004-01-06

申请号：US10192589

申请日：2002-07-11

Applicant: Osamu Kagaya ,  Masami Ohnishi ,  Kenji Sekine ,  Tomonori Tanoue

Inventor： Osamu Kagaya ,  Masami Ohnishi ,  Kenji Sekine ,  Tomonori Tanoue

IPC: H03F114

CPC classification number: H03F3/602 ,  H03F1/0277 ,  H03F1/302 ,  H03F1/56 ,  H03F3/195 ,  H03F3/245 ,  H03F3/72 ,  H03F2200/111 ,  H03F2200/222 ,  H03F2200/318 ,  H03F2200/387 ,  H03F2200/411 ,  H03F2200/429 ,  H03F2200/555 ,  H03F2203/7206 ,  H03F2203/7215 ,  H03F2203/7221 ,  H03F2203/7231 ,  H03F2203/7236

Abstract: To provide a small-sized high frequency power amplifier for preventing oscillation by a small number of switching circuits and outputting high power and low power with high efficiencies, a high frequency power amplifier module and a portable telephone, the high frequency power amplifier is constituted by an amplifying circuit A and an amplifying circuit B connected in parallel, a size of a transistor at an output stage of the amplifying circuit B is made to be equal to or smaller than ¼ of a size of a transistor of an output stage of the amplifying circuit A and a switching circuit is connected between a signal line forward from the output stage of the amplifying circuit A and a ground terminal.

Abstract translation: 为了提供一种小型高频功率放大器，用于防止少量开关电路的振荡并以高效率输出高功率和低功率，高频功率放大器模块和便携式电话，高频功率放大器由 放大电路A和放大电路B并联连接，将放大电路B的输出级的晶体管的尺寸设定为放大电路的输出级的晶体管的尺寸的1/4 电路A和开关电路连接在从放大电路A的输出级向前方的信号线与接地端子之间。

公开(公告)号：US5949097A

公开(公告)日：1999-09-07

申请号：US932939

申请日：1997-09-17

Applicant: Koji Hirata ,  Tomonori Tanoue ,  Hiroshi Masuda ,  Hiroyuki Uchiyama ,  Kazuhiro Mochizuki

Inventor： Koji Hirata ,  Tomonori Tanoue ,  Hiroshi Masuda ,  Hiroyuki Uchiyama ,  Kazuhiro Mochizuki

IPC: H01L21/331 ,  H01L21/768 ,  H01L27/06 ,  H01L29/737 ,  H01L29/04

CPC classification number: H01L29/66318 ,  H01L27/0605 ,  H01L29/7371

Abstract: The present invention relates to a contact structure not only for a semiconductor device having a hetero-junction bipolar transistor or a hetero-insulated gate field effect transistor but also for semiconductor devices at large. In a semiconductor layer of a polycrystalline or amorphous undoped III-V compound semiconductor or an alloy thereof, a through hole is formed for contact. The size of the through hole is set to permit exposure of at least part of a first conductor layer and a dielectric layer, such as an Si compound, present around the first conductor layer, and a second conductor layer is formed within the through hole so as to contact the first conductor layer. Since the semiconductor layer can be subjected to a selective dry etching for the dielectric layer, the dielectric layer is not etched at the time of forming the above through hole in the semiconductor layer. As a result an electric short-circuit of the second conductor layer with a single crystal semiconductor layer which underlies the dielectric layer can be prevented.

Abstract translation: 本发明涉及不仅具有异质结双极晶体管或异质绝缘栅场效应晶体管的半导体器件的接触结构，而且还涉及用于半导体器件的半导体器件。 在多晶或非晶未掺杂的III-V族化合物半导体的半导体层或其合金中，形成用于接触的通孔。 通孔的尺寸被设定为允许暴露在第一导体层周围的第一导体层和诸如Si化合物的电介质层的至少一部分，并且在通孔内形成第二导体层，因此 以接触第一导体层。 由于可以对半导体层进行电介质层的选择性干蚀刻，所以在形成半导体层中的上述通孔时不会蚀刻电介质层。 结果，可以防止具有位于电介质层下面的单晶半导体层的第二导体层的电短路。

公开(公告)号：US5017517A

公开(公告)日：1991-05-21

申请号：US518035

申请日：1990-05-02

Applicant: Kazuhiro Mochizuki ,  Tomonori Tanoue ,  Chushirou Kusano ,  Hiroshi Masuda ,  Katsuhiko Mitani

Inventor： Kazuhiro Mochizuki ,  Tomonori Tanoue ,  Chushirou Kusano ,  Hiroshi Masuda ,  Katsuhiko Mitani

IPC: H01L29/73 ,  H01L21/20 ,  H01L21/28 ,  H01L21/331 ,  H01L29/205 ,  H01L29/737 ,  H01L29/80

CPC classification number: H01L29/66318 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02491 ,  H01L21/02546 ,  H01L21/02639 ,  H01L21/28 ,  Y10S148/005 ,  Y10S148/011 ,  Y10S148/026 ,  Y10S438/976

Abstract: A method for fabricating a semiconductor device comprises the steps of forming the first semiconductor layer on a semiconductor substrate, forming a surface protection layer of antimony (Sb) or the material having Sb as its main component, executing the other steps necessary for the fabrication of the semiconductor device, removing the surface protection layer, and forming, on the first semiconductor layer thus exposed, the second semiconductor layer.

Abstract translation: 一种制造半导体器件的方法包括以下步骤：在半导体衬底上形成第一半导体层，形成锑（Sb）的表面保护层或具有Sb的材料作为其主要成分，执行制造所需的其它步骤 半导体器件，去除表面保护层，并且在由此暴露的第一半导体层上形成第二半导体层。

公开(公告)号：US08546939B2

公开(公告)日：2013-10-01

申请号：US11618207

申请日：2006-12-29

Applicant: Kenji Sasaki ,  Tomonori Tanoue ,  Sakae Kikuchi ,  Toshifumi Makino ,  Takeshi Sato ,  Tsutomu Kobori ,  Yasunari Umemoto ,  Takashi Kitahara

Inventor： Kenji Sasaki ,  Tomonori Tanoue ,  Sakae Kikuchi ,  Toshifumi Makino ,  Takeshi Sato ,  Tsutomu Kobori ,  Yasunari Umemoto ,  Takashi Kitahara

IPC: H01L23/34 ,  H01L29/66 ,  H01L23/52 ,  H01L23/48 ,  H01L29/40 ,  H03F1/00 ,  H03F3/14 ,  H03F3/04 ,  H03F3/68 ,  H04B1/06 ,  H04B7/00 ,  H04B1/28

CPC classification number: H04B1/28 ,  H01L23/66 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/78 ,  H01L24/85 ,  H01L25/18 ,  H01L2223/6644 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/0603 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/49113 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/85181 ,  H01L2224/92247 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01031 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/10329 ,  H01L2924/10336 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/30107 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A technology is provided so that RF modules used for cellular phones etc. can be reduced in size. Over a wiring board constituting an RF module, there are provided a first semiconductor chip in which an amplifier circuit is formed and a second semiconductor chip in which a control circuit for controlling the amplifier circuit is formed. A bonding pad over the second semiconductor chip is connected with a bonding pad over the first semiconductor chip directly by a wire without using a relay pad. In this regard, the bonding pad formed over the first semiconductor chip is not square but rectangular (oblong).

Abstract translation: 提供了一种技术，使得用于蜂窝电话等的RF模块的尺寸可以减小。 在构成RF模块的布线板上，设置有形成放大器电路的第一半导体芯片和形成用于控制放大器电路的控制电路的第二半导体芯片。 第二半导体芯片上的接合焊盘通过导线直接通过第一半导体芯片上的接合焊盘连接而不使用继电器垫。 在这方面，形成在第一半导体芯片上的焊盘不是正方形，而是矩形（长方形）。

公开(公告)号：US20100230789A1

公开(公告)日：2010-09-16

申请号：US12724268

申请日：2010-03-15

Applicant: Chiko Yorita ,  Yuji Shirai ,  Hirokazu Nakajima ,  Hiroshi Ozaku ,  Tomonori Tanoue ,  Hiroshi Okabe ,  Tsutomu Hara

Inventor： Chiko Yorita ,  Yuji Shirai ,  Hirokazu Nakajima ,  Hiroshi Ozaku ,  Tomonori Tanoue ,  Hiroshi Okabe ,  Tsutomu Hara

IPC: H01L23/552 ,  H01L21/78 ,  H01L21/56

CPC classification number: H01L23/66 ,  H01L23/3121 ,  H01L23/3677 ,  H01L23/49838 ,  H01L23/50 ,  H01L23/5383 ,  H01L23/552 ,  H01L24/45 ,  H01L24/48 ,  H01L24/97 ,  H01L2223/6644 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H05K1/0218 ,  H05K3/0052 ,  H05K3/284 ,  H05K9/0084 ,  H05K2201/09036 ,  H05K2201/0909 ,  H01L2224/85 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A technology is provided which allows a reduction in the size of a semiconductor device without degrading an electromagnetic shielding effect and reliability against reflow heating. After a plurality of components are mounted over a component mounting surface of a module substrate, a resin is formed so as to cover the mounted components. Further, over surfaces (upper and side surfaces) of the resin, a shield layer including a laminated film of a Cu plating film and an Ni plating film is formed. In the shield layer, a plurality of microchannel cracks are formed randomly along grain boundaries and in a net-like configuration without being coupled to each other in a straight line, and form a plurality of paths extending from the resin to a surface of the shield layer by the microchannel cracks.

Abstract translation: 提供了一种技术，其允许减小半导体器件的尺寸而不降低电磁屏蔽效应和不受回流加热的可靠性。 在将多个部件安装在模块基板的部件安装表面上之后，形成树脂以覆盖安装的部件。 此外，树脂的表面（上表面和侧表面）上形成包括Cu镀膜和Ni镀膜的层叠膜的屏蔽层。 在屏蔽层中，沿着晶界和网状构造随机地形成多个微通道裂纹，而不以直线彼此连接，并且形成从树脂延伸到屏蔽层表面的多个路径 层由微通道裂缝。

公开(公告)号：US07482875B2

公开(公告)日：2009-01-27

申请号：US11209691

申请日：2005-08-24

Applicant: Tomonori Tanoue ,  Masami Ohnishi

Inventor： Tomonori Tanoue ,  Masami Ohnishi

IPC: H03F3/04

CPC classification number: H03F1/26 ,  H01L2924/0002 ,  H03F1/42 ,  H03F3/04 ,  H03F3/195 ,  H03F2200/36 ,  H01L2924/00

Abstract: The invention provides a wide-band, low-noise, and small-sized high frequency power amplifier that has small temperature dependence of the gain and is excellent in input matching. A parallel circuit consisting of a resistor whose resistance depends strongly on temperature and a conventional resistor is inserted serially into a signal path in an input matching circuit of an amplification unit, and resistances of the resistors are set to appropriate values, for example, about 2/3 times an input impedance of the amplification unit.

Abstract translation: 本发明提供了宽带，低噪声，小尺寸的高频功率放大器，其具有较小的增益温度依赖性，输入匹配性优异。 由电阻强烈依赖于温度的电阻和常规电阻构成的并联电路串联插入到放大单元的输入匹配电路中的信号路径中，并且电阻器的电阻被设置为适当的值，例如约2 / 3倍于放大单元的输入阻抗。

公开(公告)号：US07067857B2

公开(公告)日：2006-06-27

申请号：US10788277

申请日：2004-03-01

Applicant: Kazuhiro Mochizuki ,  Isao Ohbu ,  Tomonori Tanoue ,  Chisaki Takubo ,  Kenichi Tanaka

Inventor： Kazuhiro Mochizuki ,  Isao Ohbu ,  Tomonori Tanoue ,  Chisaki Takubo ,  Kenichi Tanaka

IPC: H01L29/739 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109

CPC classification number: H01L27/0823 ,  H01L29/41708 ,  H01L29/42304 ,  H01L29/7371 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/1305 ,  H01L2924/16152 ,  H01L2924/19105 ,  H01L2924/00 ,  H01L2224/05599

Abstract: The gist of the present invention is as follows: In a monolithic microwave integrate circuit (MMIC) using a heterojunction bipolar transistor (HBT), via holes are respectively formed from the bottom of the MMIC for the emitter, base and collector. Of the via holes, one is located so as to face the HBT. The respective topside electrodes for the other via holes located so as not to face the HBT are provided in contact with the MMIC substrate.

Abstract translation: 本发明的要点如下：在使用异质结双极晶体管（HBT）的单片微波积分电路（MMIC）中，从MMIC的底部分别形成用于发射极，基极和集电极的通孔。 通孔中的一个位于与HBT相对的位置。 用于不与HBT相对的另一个通孔的相应顶侧电极设置成与MMIC衬底接触。