-
公开(公告)号：US20240348212A1
公开(公告)日：2024-10-17
申请号：US18633813
申请日：2024-04-12
Inventor： Muhammad Bilal BABAR , Gordon ROBERTS
CPC classification number: H03F1/42 , H03F3/45475 , H03F2200/36
Abstract: A multi-stage transimpedance amplifier comprises a first gain stage cascaded with a second gain stage, the second gain stage's output connected to the first gain stage's inverting input and to the second gain stage's inverting input, a compensation network electrically connected between the first gain stage's output and the second gain stage's output, the first gain stage, the second gain stage, and the compensation network together implementing a transfer function having complex conjugate poles and a real-valued zero, the compensation network comprising a resistor electrically connected in series with a capacitor, the resistance of the resistor and the capacitance of the capacitor determining the positioning of the complex conjugate poles, and a third gain stage cascaded with the second gain stage for introducing an additional pole in the transfer function, the third gain stage's output connected to the second gain stage's non-inverting input.
-
公开(公告)号：US12009417B2
公开(公告)日：2024-06-11
申请号：US17325765
申请日：2021-05-20
Applicant: MACOM Technology Solutions Holdings, Inc.
Inventor： Kyle Bothe , Joshua Bisges
IPC: H01L29/20 , H01L21/76 , H01L21/765 , H01L29/205 , H01L29/40 , H01L29/417 , H01L29/66 , H01L29/778 , H03F1/42 , H03F3/213
CPC classification number: H01L29/7786 , H01L21/7605 , H01L21/765 , H01L29/2003 , H01L29/205 , H01L29/401 , H01L29/402 , H01L29/4175 , H01L29/66462 , H03F1/42 , H03F3/213 , H03F2200/36
Abstract: A GaN-based high electron mobility transistor (HEMT) device includes a semiconductor structure comprising a channel layer and a barrier layer sequentially stacked on a substrate, a drain contact and a source contact on the barrier layer, and a gate contact on the barrier layer between the drain contact and the source contact. A sheet resistance of a drain access region and/or a source access region of the semiconductor structure is between 300 and 400 Ω/sq.
-
公开(公告)号：US20240128938A1
公开(公告)日：2024-04-18
申请号：US18469499
申请日：2023-09-18
Applicant: Kyocera International Inc.
Inventor： Kun-Long Wu , James June-Ming Wang
CPC classification number: H03F1/3211 , H03F1/42 , H03F3/45269 , H03F2200/36 , H03F2200/451
Abstract: A wideband power amplifier (PA) linearization technique is proposed. A current interpolation technique is proposed to linearize power amplifiers over a wide bandwidth. The wideband power amplifier linearization technique employs a novel transconductance Gm linearizer using a current interpolation technique that achieves improvement in the third order intermodulation over wide bandwidth for a sub-micron CMOS differential power amplifier. By using a small amount of compensating bias into an opposite phase differential pair, linearization over wide bandwidth is achieved and can be optimized by adjusting the compensating bias.
-
公开(公告)号：US20240014784A1
公开(公告)日：2024-01-11
申请号：US18247867
申请日：2021-02-24
Applicant: Mitsubishi Electric Corporation
Inventor： Takumi SUGITANI
CPC classification number: H03F1/42 , H03F3/245 , H03F2200/36
Abstract: A power amplifier includes: a plurality of amplifiers; a tournament circuit including a plurality of transmission lines arranged in a tournament form and connected to the plurality of amplifiers; and a plurality of difference frequency short circuits each including an inductor and a capacitor connected in series to each other, wherein resonant frequencies of the plurality of difference frequency short circuits become smaller as the difference frequency short circuits are farther from the plurality of amplifiers, and difference frequency short circuits connected to a plurality of nodes in a stage closest to the amplifiers of the tournament circuit among the plurality of difference frequency short circuits include inductive reactance that resonates with impedance seen from the nodes toward the amplifiers at an operating frequency and have different resonant frequencies.
-
公开(公告)号：US11791777B2
公开(公告)日：2023-10-17
申请号：US17406585
申请日：2021-08-19
Applicant: Kyocera International Inc.
Inventor： Kun-Long Wu , James June-Ming Wang
CPC classification number: H03F1/3211 , H03F1/42 , H03F3/45269 , H03F2200/36 , H03F2200/451
Abstract: A wideband power amplifier (PA) linearization technique is proposed. A current interpolation technique is proposed to linearize power amplifiers over a wide bandwidth. The wideband power amplifier linearization technique employs a novel transconductance Gm linearizer using a current interpolation technique that achieves improvement in the third order intermodulation over wide bandwidth for a sub-micron CMOS differential power amplifier. By using a small amount of compensating bias into an opposite phase differential pair, linearization over wide bandwidth is achieved and can be optimized by adjusting the compensating bias.
-
Patent Agency Ranking
公开(公告)号：US20230327611A1
公开(公告)日：2023-10-12
申请号：US17875465
申请日：2022-07-28
Inventor： Yuehang XU , Bowen TANG
CPC classification number: H03F1/42 , H03F3/245 , H03F1/32 , H03F2200/36 , H03F2200/451
Abstract: An ultra-wideband power amplifier includes a preamplifier circuit and a post amplifier circuit. The preamplifier circuit includes a first DC blocking capacitor C1, a first decoupling capacitor C2, a second decoupling capacitor C3, a stabilizing resistor Rin, a first AC blocking resistor RG1, a first input inductor L1, a second input inductor L2, an output inductor L3, a first input microstrip line MLIN1, a second input microstrip line MLIN2, an output microstrip line MLIN3, and a first transistor Q1. A first end of the first DC blocking capacitor C1 acts as an input terminal of the preamplifier circuit, and a second end of the first DC blocking capacitor C1 is connected to the stabilizing resistor Rin, the first input inductor L1, the first input microstrip line MLIN1, and a gate electrode of the first transistor Q1 sequentially. One end of the first decoupling capacitor C2 is grounded.
-
公开(公告)号：US20180323751A1
公开(公告)日：2018-11-08
申请号：US15825751
申请日：2017-11-29
Applicant: Rohde & Schwarz GmbH & Co. KG
Inventor： Orell Garten , Raimon GÖRITZ
CPC classification number: H03F1/486 , H03F1/26 , H03F1/42 , H03F3/191 , H03F3/20 , H03F3/211 , H03F2200/198 , H03F2200/204 , H03F2200/36 , H03F2200/39
Abstract: The present invention provides an amplifier arrangement for amplifying a broadband signal, the amplifier arrangement comprising a signal splitter configured to receive the broadband signal and output a first split signal and a second split signal, and a balanced amplifier that is coupled to the signal splitter and is configured to amplify the first split signal and the second split signal and is configured to output a single amplified broadband signal based on the amplified first split signal and the amplified second split signal. The present invention further provides a respective method.
-
公开(公告)号：US09935592B1
公开(公告)日：2018-04-03
申请号：US15413146
申请日：2017-01-23
Applicant: SKYWORKS SOLUTIONS, INC.
Inventor： Robert Bayruns , Tim Gittemeier
CPC classification number: H03F3/193 , H03F1/3205 , H03F1/483 , H03F3/1935 , H03F3/21 , H03F2200/102 , H03F2200/351 , H03F2200/36 , H03F2200/429 , H03F2200/451
Abstract: The present invention breaks up the frequency bands which can be filtered by a simple low-loss band-pass or low pass filter. The second harmonic frequency is reduced by use of a non-linear clipper element which controls the driving waveform symmetry and can reduce the harmonics by as much as 5-15 db which makes the filter much simpler and allows the amplifier to remain wide-band. The output waveform from the amplifier is symmetrical or nearly symmetrical.
-
公开(公告)号：US09887679B2
公开(公告)日：2018-02-06
申请号：US15418748
申请日：2017-01-29
Applicant: LANSUS TECHNOLOGIES INC.
Inventor： Qian Zhao , Liyang Zhang , Hua Long , Zhenjuan Cheng , Dongjie Tang
CPC classification number: H03G3/3042 , H03F1/0211 , H03F1/0261 , H03F1/565 , H03F3/19 , H03F3/195 , H03F3/21 , H03F3/45 , H03F2200/111 , H03F2200/18 , H03F2200/36 , H03F2200/387 , H03F2200/405 , H03F2200/411 , H03F2200/451 , H03F2200/462 , H03G1/0088
Abstract: A power amplifier gain switching circuit includes: a gain controller configured to receive an external input signal, output a first input signal, receive an external drive signal, and output a control signal based on the drive signal; an amplifier including: a bias input terminal configured to receive an external bias voltage; a signal input terminal configured to receive the first input signal; a control terminal configured to receive the control signal; and an output terminal configured to output an output signal with a gain; wherein the amplifier is configured to switch a gain factor of the output signal based on the control signal.
-
公开(公告)号：US09780730B2
公开(公告)日：2017-10-03
申请号：US14490864
申请日：2014-09-19
Inventor： Rui Ma , SungWon Chung , Koon Hoo Teo
CPC classification number: H03F1/0205 , H03F1/0211 , H03F1/42 , H03F1/565 , H03F3/189 , H03F3/19 , H03F3/21 , H03F2200/102 , H03F2200/36 , H03F2200/451
Abstract: A wideband self-envelope tracking power amplifier (PA) can use more than a 40-MHz channel bandwidth and improves the envelope bandwidth limit of a self-envelope tracking PAs by ten times. The PA uses an envelope load network, which is based on a general multi-stage low-pass filter. The envelope load network located between an RF choke inductor and main DC power supply provides a dynamically modulated PA supply voltage without using a dedicated envelope amplifier. An input terminal of the network connects a main PA via an RF choke inductor to an input of low-pass filter. An output terminal is connected to the low-pass filter via an envelope choke inductor and to a direct current (DC) power supply. A DC blocker is connected between the output of the low-pass filter and ground by a termination resistor.
-
-
-
-
-
-
-
-
-
Search Results
537
records
(took 0.02 seconds)
