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    Electronic devices utilizing spin torque transfer to flip magnetic orientation
    53.
    发明授权
    Electronic devices utilizing spin torque transfer to flip magnetic orientation 有权
    使用自旋转矩传递来电磁方向的电子装置

    公开(公告)号：US07933146B2

    公开(公告)日：2011-04-26

    申请号：US12415243

    申请日：2009-03-31

    申请人： Dimitar V. Dimitrov ,  Olle Gunnar Heinonen ,  Yiran Chen ,  Haiwen Xi ,  Xiaohua Lou

    发明人： Dimitar V. Dimitrov ,  Olle Gunnar Heinonen ,  Yiran Chen ,  Haiwen Xi ,  Xiaohua Lou

    IPC分类号： G11C11/00

    CPC分类号： H01L43/08 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1659 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  Y10S977/935

    摘要： Electronic devices that include (i) a magnetization controlling structure; (ii) a tunnel barrier structure; and (iii) a magnetization controllable structure including: a first polarizing layer; and a first stabilizing layer, wherein the tunnel barrier structure is between the magnetization controlling structure and the magnetization controlling structure and the first polarizing layer is between the first stabilizing layer and the tunnel barrier structure, wherein the electronic device has two stable overall magnetic configurations, and wherein a first unipolar current applied to the electronic device will cause the orientation of the magnetization controlling structure to reverse its orientation and a second unipolar current applied to the electronic device will cause the magnetization controllable structure to switch its magnetization in order to obtain one of the two stable overall magnetic configurations, wherein the second unipolar current has an amplitude that is less than the first unipolar current.

    摘要翻译： 电子设备，其包括（i）磁化控制结构; （ii）隧道屏障结构; 和（iii）可磁化控制结构，包括：第一偏振层; 以及第一稳定层，其中所述隧道势垒结构在所述磁化控制结构和所述磁化控制结构之间，并且所述第一偏振层位于所述第一稳定层和所述隧道势垒结构之间，其中所述电子器件具有两个稳定的整体磁性构造， 并且其中施加到所述电子器件的第一单极电流将导致所述磁化控制结构的取向反转其取向，并且施加到所述电子器件的第二单极电流将导致所述磁化可控结构切换其磁化，以获得 两个稳定的整体磁性配置，其中第二单极性电流具有小于第一单极电流的幅度。

    Magnetic random access memory (MRAM) utilizing magnetic flip-flop structures
    54.
    发明授权
    Magnetic random access memory (MRAM) utilizing magnetic flip-flop structures 有权
    磁性随机存取存储器（MRAM）利用磁性触发器结构

    公开(公告)号：US07933137B2

    公开(公告)日：2011-04-26

    申请号：US12415257

    申请日：2009-03-31

    申请人： Dimitar V. Dimitrov ,  Olle Gunnar Heinonen ,  Yiran Chen ,  Haiwen Xi ,  Xiaohua Lou

    发明人： Dimitar V. Dimitrov ,  Olle Gunnar Heinonen ,  Yiran Chen ,  Haiwen Xi ,  Xiaohua Lou

    IPC分类号： G11C17/06

    CPC分类号： H01L27/224 ,  G11C7/04 ,  G11C11/161 ,  G11C11/1659 ,  H01L43/08

    摘要： Non-volatile magnetic random access memory (MRAM) devices that include magnetic flip-flop structures that include a magnetization controlling structure; a first tunnel barrier structure; and a magnetization controllable structure that includes a first polarizing layer; and a first stabilizing layer, wherein the first tunnel barrier structure is between the magnetization controllable structure and the magnetization controlling structure and the first polarizing layer is between the first stabilizing layer and the first tunnel barrier structure, wherein the magnetic flip-flop device has two stable overall magnetic configurations, and wherein a first unipolar current applied to the device will cause the orientation of the magnetization controlling structure to reverse its orientation and a second unipolar current applied to the electronic device will cause the magnetization controllable structure to switch its magnetization so that the device reaches one of the two stable overall magnetic configurations, wherein the second unipolar current has an amplitude that is less than the first unipolar current; a second tunnel barrier structure and a reference layer, wherein the second tunnel barrier structure is between the magnetic flip-flop device and the reference layer. MRAM cells that include such devices and arrays including such cells are also disclosed.

    摘要翻译： 包括包含磁化控制结构的磁触发器结构的非易失磁性随机存取存储器（MRAM）器件; 第一隧道屏障结构; 以及包括第一偏振层的可磁化控制结构; 以及第一稳定层，其中所述第一隧道势垒结构在所述可磁化控制结构和所述磁化控制结构之间，并且所述第一偏振层位于所述第一稳定层和所述第一隧道势垒结构之间，其中所述磁性触发器装置具有两个 稳定的整体磁性结构，并且其中施加到器件的第一单极电流将引起磁化控制结构的取向反转其取向，并且施加到电子器件的第二单极电流将导致磁化可控结构切换其磁化，使得 该器件达到两种稳定的总体磁性结构中的一种，其中第二单极性电流的振幅小于第一单极性电流; 第二隧道势垒结构和参考层，其中所述第二隧道势垒结构位于所述磁触发器件和所述参考层之间。 还公开了包括这样的装置和包括这种细胞的阵列的MRAM细胞。

    MAGNETIC MEMORY CELL CONSTRUCTION
    55.
    发明申请
    MAGNETIC MEMORY CELL CONSTRUCTION 有权
    磁记忆体细胞结构

    公开(公告)号：US20110089510A1

    公开(公告)日：2011-04-21

    申请号：US12977630

    申请日：2010-12-23

    申请人： Kaizhong Gao ,  Haiwen Xi

    发明人： Kaizhong Gao ,  Haiwen Xi

    IPC分类号： H01L29/82

    CPC分类号： H01L43/12 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/3218 ,  H01F10/3254 ,  H01F10/3286 ,  H01F41/307 ,  H01L43/08 ,  Y10T428/1114 ,  Y10T428/1121 ,  Y10T428/1143

    摘要： A magnetic tunnel junction cell having a free layer, a ferromagnetic pinned layer, and a barrier layer therebetween. The free layer has a central ferromagnetic portion and a stabilizing portion radially proximate the central ferromagnetic portion. The construction can be used for both in-plane magnetic memory cells where the magnetization orientation of the magnetic layer is in the stack film plane and out-of-plane magnetic memory cells where the magnetization orientation of the magnetic layer is out of the stack film plane, e.g., perpendicular to the stack plane.

    摘要翻译： 具有自由层，铁磁性钉扎层和它们之间的阻挡层的磁性隧道结电池。 自由层具有中心铁磁部分和径向靠近中心铁磁部分的稳定部分。 该结构可以用于其中磁性层的磁化取向在堆叠膜平面中的面内磁性存储单元和磁性层的磁化取向在堆叠膜之外的面外磁性存储单元 平面，例如垂直于堆叠平面。

    NAND Based Resistive Sense Memory Cell Architecture
    56.
    发明申请
    NAND Based Resistive Sense Memory Cell Architecture 有权
    基于NAND的电阻式感应存储器单元架构

    公开(公告)号：US20110032749A1

    公开(公告)日：2011-02-10

    申请号：US12903716

    申请日：2010-10-13

    申请人： Harry Hongyue Liu ,  Haiwen Xi ,  Antoine Khoueir ,  Song Xue

    发明人： Harry Hongyue Liu ,  Haiwen Xi ,  Antoine Khoueir ,  Song Xue

    IPC分类号： G11C11/34 ,  H01L45/00

    CPC分类号： H01L27/24 ,  G11C11/1659 ,  G11C13/0007 ,  G11C13/003 ,  G11C2213/32 ,  G11C2213/34 ,  G11C2213/75 ,  H01L27/228

    摘要： Various embodiments are directed to an apparatus comprising a semiconductor memory array with non-volatile memory unit cells arranged into a NAND block. Each of the unit cells comprises a resistive sense element connected in parallel with a switching element. The resistive sense elements are connected in series to form a first serial path, and the switching elements are connected in series to form a second serial path parallel to the first serial path. Each resistive sense element is serially connected to an adjacent resistive sense element in the block by a tortuous conductive path having a portion that extends substantially vertically between said elements to provide operational isolation therefor.

    摘要翻译： 各种实施例涉及一种包括具有布置在NAND块中的非易失性存储器单元的半导体存储器阵列的装置。 每个单元电池包括与开关元件并联连接的电阻感测元件。 电阻感测元件串联连接以形成第一串行路径，并且开关元件串联连接以形成平行于第一串行路径的第二串行路径。 每个电阻感测元件通过具有在所述元件之间基本上垂直延伸的部分的曲折导电路径串联连接到块中的相邻电阻感测元件，以提供对其的操作隔离。

    SPIN-TRANSFER TORQUE MEMORY SELF-REFERENCE READ AND WRITE ASSIST METHODS
    57.
    发明申请
    SPIN-TRANSFER TORQUE MEMORY SELF-REFERENCE READ AND WRITE ASSIST METHODS 有权
    转子转矩记忆自读参考读写方法

    公开(公告)号：US20110026317A1

    公开(公告)日：2011-02-03

    申请号：US12903305

    申请日：2010-10-13

    申请人： Wenzhong Zhu ,  Yiran Chen ,  Xiaobin Wang ,  Zheng Gao ,  Haiwen Xi ,  Dimitar V. Dimitrov

    发明人： Wenzhong Zhu ,  Yiran Chen ,  Xiaobin Wang ,  Zheng Gao ,  Haiwen Xi ,  Dimitar V. Dimitrov

    IPC分类号： G11C11/00

    CPC分类号： G11C11/1675 ,  G11C11/1659 ,  G11C11/1673

    摘要： A spin-transfer torque memory apparatus and self-reference read and write assist schemes are described. One method of self-reference reading a spin-transfer torque memory unit includes applying a first read current through a magnetic tunnel junction data cell and forming a first bit line read voltage. A magnetic field is applied through the free magnetic layer the forming a magnetic field modified magnetic tunnel junction data cell. Then a second read current is applied thorough the magnetic field modified magnetic tunnel junction data cell forming a second bit line read voltage and compared with the first bit line read voltage to determine whether the first resistance state of the magnetic tunnel junction data cell was a high resistance state or low resistance state. Methods of applying a destabilizing magnetic field to the MTJ and then writing the desired resistance state are also disclosed.

    摘要翻译： 描述了自旋转移力矩存储装置和自参考读和写辅助方案。 读取自旋转移转矩存储单元的一种自参考方法包括：通过磁性隧道结数据单元施加第一读取电流并形成第一位线读取电压。 通过自由磁层施加磁场，形成磁场修正磁隧道结数据单元。 然后通过形成第二位线读取电压的磁场修正磁隧道结数据单元施加第二读取电流，并与第一位线读取电压进行比较，以确定磁性隧道结数据单元的第一电阻状态是否为高 电阻状态或低电阻状态。 还公开了将去稳定磁场施加到MTJ然后写入期望的电阻状态的方法。

    Memory device structures including phase-change storage cells
    59.
    发明授权
    Memory device structures including phase-change storage cells 有权
    包括相变存储单元的存储器件结构

    公开(公告)号：US07848139B2

    公开(公告)日：2010-12-07

    申请号：US12233389

    申请日：2008-09-18

    申请人： Yizhang Yang ,  Haiwen Xi ,  Yiming Shi ,  Kaizhong Gao ,  Jun Ouyang ,  Song S. Xue

    发明人： Yizhang Yang ,  Haiwen Xi ,  Yiming Shi ,  Kaizhong Gao ,  Jun Ouyang ,  Song S. Xue

    IPC分类号： G11C11/00

    CPC分类号： G11C13/004 ,  G11C13/0004 ,  G11C13/0069 ,  G11C2013/0045 ,  G11C2013/0078 ,  G11C2013/008 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/1226 ,  H01L45/1286 ,  H01L45/144

    摘要： A conductive write line of a memory device includes a resistive heating portion for setting and resetting a phase-change material (PCM) storage cell of the device. A dielectric interface extends between the resistive heating portion of the write line and a side of the storage cell, and provides electrical insulation while allowing for thermal coupling between the resistive heating portion and the storage cell. A width of the resistive heating portion of the write line may be less than a width of the storage cell and/or may be less than a width of adjacent portions of the write line, between which the resistive heating portion extends. The side of the storage cell may define a channel of the storage cell through which the write line passes, such that the resistive heating portion is located within the channel.

    摘要翻译： 存储器件的导电写入线包括用于设置和复位器件的相变材料（PCM）存储单元的电阻加热部分。 电介质界面在写入线的电阻加热部分和存储单元的一侧之间延伸，并提供电绝缘，同时允许电阻加热部分和存储单元之间的热耦合。 写入线的电阻加热部分的宽度可以小于存储单元的宽度和/或可以小于写入线的相邻部分的宽度，电阻加热部分在其之间延伸。 存储单元的侧面可以限定写入线通过的存储单元的通道，使得电阻加热部分位于通道内。

    Planar programmable metallization memory cells
    60.
    发明授权
    Planar programmable metallization memory cells 有权
    平面可编程金属化存储单元

    公开(公告)号：US07847278B2

    公开(公告)日：2010-12-07

    申请号：US12233770

    申请日：2008-09-19

    申请人： Antoine Khoueir ,  Haiwen Xi ,  Shuiyuan Huang

    发明人： Antoine Khoueir ,  Haiwen Xi ,  Shuiyuan Huang

    IPC分类号： H01L47/00

    CPC分类号： H01L45/085 ,  H01L27/2436 ,  H01L45/1226 ,  H01L45/141 ,  H01L45/143 ,  H01L45/1658

    摘要： Programmable metallization memory cells that have an inert electrode and an active electrode positioned in a non-overlapping manner in relation to a substrate. A fast ion conductor material is in electrical contact with and extends from the inert electrode to the active electrode, the fast ion conductor including superionic clusters extending from the inert electrode to the active electrode. A metal layer extends from the inert electrode to the active electrode, yet is electrically insulated from each of the inert electrode and the active electrode by the fast ion conductor material. Methods for forming programmable metallization cells are also disclosed.

    摘要翻译： 具有惰性电极和有源电极的可编程金属化存储单元相对于衬底以非重叠的方式定位。 快速离子导体材料与惰性电极电接触并延伸到有源电极，快速离子导体包括从惰性电极延伸到有源电极的超离子簇。 金属层从惰性电极延伸到有源电极，但是通过快速离子导体材料与惰性电极和有源电极中的每一个电绝缘。 还公开了用于形成可编程金属化电池的方法。