公开(公告)号：US20100067288A1

公开(公告)日：2010-03-18

申请号：US12233389

申请日：2008-09-18

Applicant: Yizhang Yang ,  Haiwen Xi ,  Yiming Shi ,  Kaizhong Gao ,  Jun Ouyang ,  Song S. Xue

Inventor： Yizhang Yang ,  Haiwen Xi ,  Yiming Shi ,  Kaizhong Gao ,  Jun Ouyang ,  Song S. Xue

IPC: G11C11/00

CPC classification number: G11C13/004 ,  G11C13/0004 ,  G11C13/0069 ,  G11C2013/0045 ,  G11C2013/0078 ,  G11C2013/008 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/1226 ,  H01L45/1286 ,  H01L45/144

Abstract: A conductive write line of a memory device includes a resistive heating portion for setting and resetting a phase-change material (PCM) storage cell of the device. A dielectric interface extends between the resistive heating portion of the write line and a side of the storage cell, and provides electrical insulation while allowing for thermal coupling between the resistive heating portion and the storage cell. A width of the resistive heating portion of the write line may be less than a width of the storage cell and/or may be less than a width of adjacent portions of the write line, between which the resistive heating portion extends. The side of the storage cell may define a channel of the storage cell through which the write line passes, such that the resistive heating portion is located within the channel.

Abstract translation: 存储器件的导电写入线包括用于设置和复位器件的相变材料（PCM）存储单元的电阻加热部分。 电介质界面在写入线的电阻加热部分和存储单元的一侧之间延伸，并提供电绝缘，同时允许电阻加热部分和存储单元之间的热耦合。 写入线的电阻加热部分的宽度可以小于存储单元的宽度和/或可以小于写入线的相邻部分的宽度，电阻加热部分在其之间延伸。 存储单元的侧面可以限定写入线通过的存储单元的通道，使得电阻加热部分位于通道内。

公开(公告)号：US08243503B2

公开(公告)日：2012-08-14

申请号：US12958106

申请日：2010-12-01

Applicant: Kaizhong Gao ,  Haiwen Xi ,  Yiming Shi ,  Song S. Xue ,  Sining Mao

Inventor： Kaizhong Gao ,  Haiwen Xi ,  Yiming Shi ,  Song S. Xue ,  Sining Mao

IPC: G11C11/00

CPC classification number: G11C11/1675 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673

Abstract: The present invention relates to a memory cell including a first reference layer having a first magnetization with a first magnetization direction and a second reference layer having a second magnetization with a second magnetization direction substantially perpendicular to the first magnetization direction. A storage layer is disposed between the first reference layer and second reference layer and has a third magnetization direction about 45° from the first magnetization direction and about 135° from the second magnetization direction when the memory cell is in a first data state, and a fourth magnetization direction opposite the third magnetization direction when the memory cell is in a second data state.

Abstract translation: 本发明涉及包括具有第一磁化方向的第一磁化的第一参考层和具有基本上垂直于第一磁化方向的第二磁化方向的第二磁化的第二参考层的存储单元。 存储层设置在第一参考层和第二参考层之间，并且当存储单元处于第一数据状态时，具有从第一磁化方向大约45°的第三磁化方向和从第二磁化方向开始的大约135°的存储层， 当存储单元处于第二数据状态时与第三磁化方向相反的第四磁化方向。

公开(公告)号：US20110069537A1

公开(公告)日：2011-03-24

申请号：US12958106

申请日：2010-12-01

Applicant: Kaizhong Gao ,  Haiwen Xi ,  Yiming Shi ,  Song S. Xue ,  Sining Mao

Inventor： Kaizhong Gao ,  Haiwen Xi ,  Yiming Shi ,  Song S. Xue ,  Sining Mao

IPC: G11C11/16 ,  G11C11/15

CPC classification number: G11C11/1675 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673

Abstract: The present invention relates to a memory cell including a first reference layer having a first magnetization with a first magnetization direction and a second reference layer having a second magnetization with a second magnetization direction substantially perpendicular to the first magnetization direction. A storage layer is disposed between the first reference layer and second reference layer and has a third magnetization direction about 45° from the first magnetization direction and about 135° from the second magnetization direction when the memory cell is in a first data state, and a fourth magnetization direction opposite the third magnetization direction when the memory cell is in a second data state.

Abstract translation: 本发明涉及包括具有第一磁化方向的第一磁化的第一参考层和具有基本上垂直于第一磁化方向的第二磁化方向的第二磁化的第二参考层的存储单元。 存储层设置在第一参考层和第二参考层之间，并且当存储单元处于第一数据状态时，具有从第一磁化方向大约45°的第三磁化方向和从第二磁化方向开始的大约135°的存储层， 当存储单元处于第二数据状态时与第三磁化方向相反的第四磁化方向。

公开(公告)号：US07859069B2

公开(公告)日：2010-12-28

申请号：US11724740

申请日：2007-03-16

Applicant: Kaizhong Gao ,  Haiwen Xi ,  Yiming Shi ,  Song S. Xue ,  Sining Mao

Inventor： Kaizhong Gao ,  Haiwen Xi ,  Yiming Shi ,  Song S. Xue ,  Sining Mao

IPC: G11C11/15

CPC classification number: G11C11/1675 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673

Abstract: The present invention relates to a memory cell including a first reference layer having a first magnetization with a first magnetization direction and a second reference layer having a second magnetization with a second magnetization direction substantially perpendicular to the first magnetization direction. A storage layer is disposed between the first reference layer and second reference layer and has a third magnetization direction about 45° from the first magnetization direction and about 135° from the second magnetization direction when the memory cell is in a first data state, and a fourth magnetization direction opposite the third magnetization direction when the memory cell is in a second data state.

Abstract translation: 本发明涉及包括具有第一磁化方向的第一磁化的第一参考层和具有基本上垂直于第一磁化方向的第二磁化方向的第二磁化的第二参考层的存储单元。 存储层设置在第一参考层和第二参考层之间，并且当存储单元处于第一数据状态时，具有从第一磁化方向大约45°的第三磁化方向和从第二磁化方向开始的大约135°的存储层， 当存储单元处于第二数据状态时与第三磁化方向相反的第四磁化方向。

公开(公告)号：US07848139B2

公开(公告)日：2010-12-07

申请号：US12233389

申请日：2008-09-18

Applicant: Yizhang Yang ,  Haiwen Xi ,  Yiming Shi ,  Kaizhong Gao ,  Jun Ouyang ,  Song S. Xue

Inventor： Yizhang Yang ,  Haiwen Xi ,  Yiming Shi ,  Kaizhong Gao ,  Jun Ouyang ,  Song S. Xue

IPC: G11C11/00

CPC classification number: G11C13/004 ,  G11C13/0004 ,  G11C13/0069 ,  G11C2013/0045 ,  G11C2013/0078 ,  G11C2013/008 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/1226 ,  H01L45/1286 ,  H01L45/144

Abstract: A conductive write line of a memory device includes a resistive heating portion for setting and resetting a phase-change material (PCM) storage cell of the device. A dielectric interface extends between the resistive heating portion of the write line and a side of the storage cell, and provides electrical insulation while allowing for thermal coupling between the resistive heating portion and the storage cell. A width of the resistive heating portion of the write line may be less than a width of the storage cell and/or may be less than a width of adjacent portions of the write line, between which the resistive heating portion extends. The side of the storage cell may define a channel of the storage cell through which the write line passes, such that the resistive heating portion is located within the channel.

Abstract translation: 存储器件的导电写入线包括用于设置和复位器件的相变材料（PCM）存储单元的电阻加热部分。 电介质界面在写入线的电阻加热部分和存储单元的一侧之间延伸，并提供电绝缘，同时允许电阻加热部分和存储单元之间的热耦合。 写入线的电阻加热部分的宽度可以小于存储单元的宽度和/或可以小于写入线的相邻部分的宽度，电阻加热部分在其之间延伸。 存储单元的侧面可以限定写入线通过的存储单元的通道，使得电阻加热部分位于通道内。

公开(公告)号：US07724469B2

公开(公告)日：2010-05-25

申请号：US11634767

申请日：2006-12-06

Applicant: Kaizhong Gao ,  Haiwen Xi ,  Yiming Shi ,  Sining Mao ,  Patrick J. Ryan ,  Song S. Xue ,  Shaoping Li

Inventor： Kaizhong Gao ,  Haiwen Xi ,  Yiming Shi ,  Sining Mao ,  Patrick J. Ryan ,  Song S. Xue ,  Shaoping Li

IPC: G11B5/127 ,  G11B5/187

CPC classification number: G11B5/1278 ,  G11B2005/001

Abstract: A magnetic writer includes a write element and an oscillation device disposed adjacent to the write element. The first oscillation device includes a first magnetic layer, a second magnetic layer having a magnetization vector including a component perpendicular to a major plane of the first magnetic layer. The first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer. The first oscillation device generates a high-frequency oscillation field when a current is directed perpendicular to the major plane of the first magnetic layer.

Abstract translation: 磁性写入器包括写入元件和邻近写入元件设置的振荡器件。 第一振荡装置包括第一磁性层，具有包括垂直于第一磁性层的主平面的分量的磁化矢量的第二磁性层。 设置在第一磁性层和第二磁性层之间的第一非磁性层。 当电流垂直于第一磁性层的主平面时，第一振荡装置产生高频振荡场。

公开(公告)号：US20080225584A1

公开(公告)日：2008-09-18

申请号：US11724740

申请日：2007-03-16

Applicant: Kaizhong Gao ,  Haiwen Xi ,  Yiming Shi ,  Song S. Xue ,  Sining Mao

Inventor： Kaizhong Gao ,  Haiwen Xi ,  Yiming Shi ,  Song S. Xue ,  Sining Mao

IPC: G11C11/15

CPC classification number: G11C11/1675 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673

Abstract: The present invention relates to a memory cell including a first reference layer having a first magnetization with a first magnetization direction and a second reference layer having a second magnetization with a second magnetization direction substantially perpendicular to the first magnetization direction. A storage layer is disposed between the first reference layer and second reference layer and has a third magnetization direction about 45° from the first magnetization direction and about 135° from the second magnetization direction when the memory cell is in a first data state, and a fourth magnetization direction opposite the third magnetization direction when the memory cell is in a second data state.

Abstract translation: 本发明涉及包括具有第一磁化方向的第一磁化的第一参考层和具有基本上垂直于第一磁化方向的第二磁化方向的第二磁化的第二参考层的存储单元。 存储层设置在第一参考层和第二参考层之间，并且当存储单元处于第一数据状态时，具有从第一磁化方向大约45°的第三磁化方向和从第二磁化方向开始的大约135°的存储层， 当存储单元处于第二数据状态时与第三磁化方向相反的第四磁化方向。

公开(公告)号：US20080137224A1

公开(公告)日：2008-06-12

申请号：US11634767

申请日：2006-12-06

Applicant: Kaizhong Gao ,  Haiwen Xi ,  Yiming Shi ,  Sining Mao ,  Patrick J. Ryan ,  Song S. Xue ,  Shaoping Li

Inventor： Kaizhong Gao ,  Haiwen Xi ,  Yiming Shi ,  Sining Mao ,  Patrick J. Ryan ,  Song S. Xue ,  Shaoping Li

IPC: G11B5/02

CPC classification number: G11B5/1278 ,  G11B2005/001

Abstract: A magnetic writer includes a write element and an oscillation device disposed adjacent to the write element. The first oscillation device includes a first magnetic layer, a second magnetic layer having a magnetization vector including a component perpendicular to a major plane of the first magnetic layer. The first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer. The first oscillation device generates a high-frequency oscillation field when a current is directed perpendicular to the major plane of the first magnetic layer.

Abstract translation: 磁性写入器包括写入元件和邻近写入元件设置的振荡器件。 第一振荡装置包括第一磁性层，具有包括垂直于第一磁性层的主平面的分量的磁化矢量的第二磁性层。 设置在第一磁性层和第二磁性层之间的第一非磁性层。 当电流垂直于第一磁性层的主平面时，第一振荡装置产生高频振荡场。