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    Antiferromagnetically-coupled soft bias magnetoresistive read head, and fabrication method therefore
    41.
    发明授权
    Antiferromagnetically-coupled soft bias magnetoresistive read head, and fabrication method therefore 有权
    反铁磁耦合软偏置磁阻读头，因此制造方法

    公开(公告)号：US08611054B1

    公开(公告)日：2013-12-17

    申请号：US13444723

    申请日：2012-04-11

    Applicant: Changhe Shang ,  Daniele Mauri ,  Kuok San Ho ,  Anup G. Roy ,  Ming Mao

    Inventor： Changhe Shang ,  Daniele Mauri ,  Kuok San Ho ,  Anup G. Roy ,  Ming Mao

    IPC: G11B5/39

    CPC classification number: G11B5/3932 ,  G01R33/093 ,  G11B5/3909 ,  G11B2005/3996 ,  H01F10/3218 ,  H01F10/3254

    Abstract: A magnetic read transducer is described with a magnetoresistive sensor that has a free layer, and an antiferromagnetically-coupled (AFC) soft bias layer for magnetically biasing the free layer. The free layer has a first edge in a track width direction along an air-bearing surface (ABS). At least a portion of the AFC soft bias layer is conformal to at least a portion of a second edge of the free layer, and situated to form a magnetic moment at an angle with respect to a center line of the free layer. The center line of the free layer extends in the same direction as the free layer first edge that is in the track width direction along the ABS.

    Abstract translation: 用具有自由层的磁阻传感器和用于磁偏置自由层的反铁磁耦合（AFC）软偏置层来描述磁读取传感器。 自由层具有沿空气轴承表面（ABS）的轨道宽度方向上的第一边缘。 AFC柔性偏置层的至少一部分与自由层的第二边缘的至少一部分共形，并且位于相对于自由层的中心线形成一个角度的磁矩。 自由层的中心线沿与ABS沿轨道宽度方向的自由层第一边缘相同的方向延伸。

    THERMALLY ASSISTED MAGNETIC WRITING DEVICE
    42.
    发明申请
    THERMALLY ASSISTED MAGNETIC WRITING DEVICE 有权
    热辅助磁记录装置

    公开(公告)号：US20130250671A1

    公开(公告)日：2013-09-26

    申请号：US13876390

    申请日：2011-09-29

    Applicant: Bernard Dieny ,  Jerome Moritz ,  Ricardo Sousa

    Inventor： Bernard Dieny ,  Jerome Moritz ,  Ricardo Sousa

    IPC: G11C11/16

    CPC classification number: G11C11/1675 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  H01F10/3218 ,  H01F10/3268 ,  H01F10/3272 ,  H01F10/3286 ,  H01L43/08

    Abstract: A thermally assisted magnetic writing device including a first magnetic layer known as the “reference layer,” a second magnetic layer known as the “storage layer” that presents a variable magnetization direction, a spacer situated between the reference layer and the storage layer and a first antiferromagnetic layer in contact with the storage layer, the first antiferromagnetic layer being able to trap the magnetization direction of the storage layer. The magnetic device also includes a stabilization layer made of a ferromagnetic material, the stabilization layer being in contact with the first antiferromagnetic layer.

    Abstract translation: 一种热辅助磁写入装置，包括被称为“参考层”的第一磁性层，被称为呈现可变磁化方向的“存储层”的第二磁性层，位于参考层和存储层之间的间隔件，以及 第一反铁磁层与存储层接触，第一反铁磁层能够捕获存储层的磁化方向。 磁性装置还包括由铁磁材料制成的稳定层，稳定层与第一反铁磁层接触。

    Array of magnetic tunneling junction film structures with process determined in-plane magnetic anisotropy
    43.
    发明授权
    Array of magnetic tunneling junction film structures with process determined in-plane magnetic anisotropy 有权
    具有工艺确定的面内磁各向异性的磁隧道结膜结构阵列

    公开(公告)号：US08525280B2

    公开(公告)日：2013-09-03

    申请号：US13136194

    申请日：2011-07-26

    Applicant: Tai Min ,  Cheng Horng ,  Po Kang Wang

    Inventor： Tai Min ,  Cheng Horng ,  Po Kang Wang

    IPC: H01L29/82 ,  G11C11/15

    CPC classification number: H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/3218 ,  H01F10/3272 ,  H01F41/307 ,  H01L43/12

    Abstract: An MRAM array of MTJ memory cells is provided wherein each such cell is a layered MTJ structure located at an intersection of a word and bit line and has a small circular horizontal cross-section of 1.0 microns or less in diameter and wherein the ferromagnetic free layer of each such cell has a magnetic anisotropy produced by a magnetic coupling with a thin antiferromagnetic layer that is formed on the free layer. The array of MTJ memory cells so provided is far less sensitive to shape irregularities and edge defects of individual cells than arrays of the prior art.

    Abstract translation: 提供了MTJ存储器单元的MRAM阵列，其中每个这样的单元是位于字和位线的交叉点处的分层MTJ结构，并且具有直径为1.0微米或更小的小的圆形水平横截面，并且其中铁磁自由层 每个这样的电池具有由形成在自由层上的薄的反铁磁性层的磁耦合产生的磁各向异性。 如此提供的MTJ存储器单元的阵列比现有技术的阵列对单个单元的形状不规则和边缘缺陷的敏感性差。

    Three-layer magnetic element, magnetic field sensor, magnetic memory and magnetic logic gate using such an element
    44.
    发明授权
    Three-layer magnetic element, magnetic field sensor, magnetic memory and magnetic logic gate using such an element 有权
    三层磁性元件，磁场传感器，磁存储器以及使用这种元件的磁逻辑门

    公开(公告)号：US08513944B2

    公开(公告)日：2013-08-20

    申请号：US12903519

    申请日：2010-10-13

    Applicant: Bernard Rodmacq ,  Stéphane Auffret ,  Bernard Dieny ,  Lavinia Elena Nistor

    Inventor： Bernard Rodmacq ,  Stéphane Auffret ,  Bernard Dieny ,  Lavinia Elena Nistor

    IPC: G01R33/07 ,  G01R33/02

    CPC classification number: H01L43/06 ,  B82Y25/00 ,  G01R33/098 ,  G11C11/18 ,  H01F10/3218 ,  H01F10/3236 ,  H01F10/3286 ,  H01F41/32 ,  H01L43/14

    Abstract: A three-layer magnetic element comprises, on a substrate, a first oxide, hydride or nitride layer O having a metal magnetic layer M mounted thereon, the latter having either a second oxide, hydride or nitride layer O′, or a non-ferromagnetic metal layer M′ mounted thereon. Layer M is continuous, has a thickness of 1 to 5 nm and the magnetization thereof is parallel to the layer plane in the absence of layers O and O′. There is, for a range of temperature equal to or greater than ambient temperature, interfacial magnetic anisotropy perpendicular to the layer plane on interfaces O/M and M/O′ that is capable of decreasing the effective demagnetizing field of layer M or orienting the magnetization of layer M in a manner substantially perpendicular to the layer plane.

    Abstract translation: 三层磁性元件在衬底上包括其上安装有金属磁性层M的第一氧化物，氢化物或氮化物层O，其具有第二氧化物，氢化物或氮化物层O'或非铁磁性层 金属层M'。 层M是连续的，具有1至5nm的厚度，并且其磁化在不存在层O和O'的情况下平行于层平面。 对于等于或大于环境温度的温度范围，界面O / M和M / O'上的垂直于层平面的界面磁各向异性能够降低层M的有效去磁场或使磁化 层M以基本上垂直于层平面的方式。

    SPIN CURRENT GENERATOR FOR STT-MRAM OR OTHER SPINTRONICS APPLICATIONS
    45.
    发明申请
    SPIN CURRENT GENERATOR FOR STT-MRAM OR OTHER SPINTRONICS APPLICATIONS 有权
    用于STT-MRAM或其他SPINTRONICS应用的旋转电流发生器

    公开(公告)号：US20120287704A1

    公开(公告)日：2012-11-15

    申请号：US13555940

    申请日：2012-07-23

    Applicant: Jun Liu ,  Gurtej Sandhu

    Inventor： Jun Liu ,  Gurtej Sandhu

    IPC: G11C11/16

    CPC classification number: G11C11/1675 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/1284 ,  G11C11/16 ,  H01F10/3218 ,  Y10S977/934

    Abstract: Spin current generators and systems and methods for employing spin current generators. A spin current generator may be configured to generate a spin current polarized in one direction, or a spin current selectively polarized in two directions. The spin current generator may by employed in spintronics applications, wherein a spin current is desired.

    Abstract translation: 自旋电流发生器和采用自旋电流发生器的系统和方法。 自旋电流发生器可以被配置为产生在一个方向上偏振的自旋电流，或者在两个方向上选择性地偏振的自旋电流。 自旋电流发生器可用于自旋电子学应用中，其中期望自旋电流。

    Nanodevices for Spintronics and Methods of Using Same
    49.
    发明申请
    Nanodevices for Spintronics and Methods of Using Same 有权
    自旋电子学的纳米器件及其使用方法

    公开(公告)号：US20100109712A1

    公开(公告)日：2010-05-06

    申请号：US12530862

    申请日：2008-02-29

    Applicant: Igor Zaliznyak ,  Alexei Tsvelik ,  Dmitri Kharzeev

    Inventor： Igor Zaliznyak ,  Alexei Tsvelik ,  Dmitri Kharzeev

    IPC: H03K5/01 ,  H01L43/10 ,  H01L43/12

    CPC classification number: H01L29/1606 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1675 ,  G11C11/18 ,  H01F10/005 ,  H01F10/3218 ,  H01L29/66984

    Abstract: Graphene magnet multilayers (GMMs) are employed to facilitate development of spintronic devices. The GMMs can include a sheet of monolayer (ML) or few-layer (FL) graphene in contact with a magnetic material, such as a ferromagnetic (FM) or an antiferromagnetic material. Electrode terminals can be disposed on the GMMs to be in electrical contact with the graphene. A magnetic field effect is induced in the graphene sheet based on an exchange magnetic field resulting from a magnetization of the magnetic material which is in contact with graphene. Electrical characteristics of the graphene can be manipulated based on the magnetization of the magnetic material in the GMM.

    Abstract translation: 采用石墨烯磁体多层（GMM）来促进自旋电子器件的开发。 GMM可以包括与诸如铁磁（FM）或反铁磁材料的磁性材料接触的单层（ML）或几层（FL）石墨烯片。 电极端子可以布置在GMM上以与石墨烯电接触。 基于与石墨烯接触的磁性材料的磁化产生的交换磁场，在石墨烯片中产生磁场效应。 可以基于GMM中的磁性材料的磁化来操作石墨烯的电特性。

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