公开(公告)号：US07105372B2

公开(公告)日：2006-09-12

申请号：US10761003

申请日：2004-01-20

Applicant: Tai Min ,  Cheng Horng ,  Po Kang Wang

Inventor： Tai Min ,  Cheng Horng ,  Po Kang Wang

IPC: H01L21/00

CPC classification number: H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/3218 ,  H01F10/3272 ,  H01F41/307 ,  H01L43/12

Abstract: A method of forming an MTJ memory cell and/or an array of such cells is provided wherein each such cell has a small circular horizontal cross-section of 1.0 microns or less in diameter and wherein the ferromagnetic free layer of each such cell has a magnetic anisotropy produced by a magnetic coupling with a thin antiferromagnetic layer that is formed on the free layer. The MTJ memory cell so provided is far less sensitive to shape irregularities and edge defects than cells of the prior art.

Abstract translation: 提供了形成MTJ存储器单元和/或这种单元阵列的方法，其中每个这样的单元具有直径为1.0微米或更小的小的圆形水平横截面，并且其中每个这样的单元的铁磁自由层具有磁性 通过与形成在自由层上的薄的反铁磁层的磁耦合产生的各向异性。 如此提供的MTJ存储单元对于形状不规则和边缘缺陷的敏感性远低于现有技术的单元。

公开(公告)号：US08525280B2

公开(公告)日：2013-09-03

申请号：US13136194

申请日：2011-07-26

Applicant: Tai Min ,  Cheng Horng ,  Po Kang Wang

Inventor： Tai Min ,  Cheng Horng ,  Po Kang Wang

IPC: H01L29/82 ,  G11C11/15

CPC classification number: H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/3218 ,  H01F10/3272 ,  H01F41/307 ,  H01L43/12

Abstract: An MRAM array of MTJ memory cells is provided wherein each such cell is a layered MTJ structure located at an intersection of a word and bit line and has a small circular horizontal cross-section of 1.0 microns or less in diameter and wherein the ferromagnetic free layer of each such cell has a magnetic anisotropy produced by a magnetic coupling with a thin antiferromagnetic layer that is formed on the free layer. The array of MTJ memory cells so provided is far less sensitive to shape irregularities and edge defects of individual cells than arrays of the prior art.

Abstract translation: 提供了MTJ存储器单元的MRAM阵列，其中每个这样的单元是位于字和位线的交叉点处的分层MTJ结构，并且具有直径为1.0微米或更小的小的圆形水平横截面，并且其中铁磁自由层 每个这样的电池具有由形成在自由层上的薄的反铁磁性层的磁耦合产生的磁各向异性。 如此提供的MTJ存储器单元的阵列比现有技术的阵列对单个单元的形状不规则和边缘缺陷的敏感性差。

公开(公告)号：US20070008661A1

公开(公告)日：2007-01-11

申请号：US11515533

申请日：2006-09-05

Applicant: Tai Min ,  Cheng Horng ,  Po Kang Wang

Inventor： Tai Min ,  Cheng Horng ,  Po Kang Wang

IPC: G11B5/127

CPC classification number: H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/3218 ,  H01F10/3272 ,  H01F41/307 ,  H01L43/12

Abstract: An MTJ memory cell and/or an array of such cells is provided wherein each such cell has a small circular horizontal cross-section of 1.0 microns or less in diameter and wherein the ferromagnetic free layer of each such cell has a magnetic anisotropy produced by a magnetic coupling with a thin antiferromagnetic layer that is formed on the free layer. The MTJ memory cell so provided is far less sensitive to shape irregularities and edge defects than cells of the prior art.

Abstract translation: 提供MTJ存储器单元和/或这种单元的阵列，其中每个这样的单元具有直径为1.0微米或更小的小的圆形水平横截面，并且其中每个这样的单元的铁磁性自由层具有由 与在自由层上形成的薄的反铁磁层的磁耦合。 如此提供的MTJ存储单元对于形状不规则和边缘缺陷的敏感性远低于现有技术的单元。

公开(公告)号：US07994596B2

公开(公告)日：2011-08-09

申请号：US11515533

申请日：2006-09-05

Applicant: Tai Min ,  Cheng Horng ,  Po Kang Wang

Inventor： Tai Min ,  Cheng Horng ,  Po Kang Wang

IPC: H01L29/82 ,  G11C11/15

CPC classification number: H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/3218 ,  H01F10/3272 ,  H01F41/307 ,  H01L43/12

Abstract: An MTJ memory cell and/or an array of such cells is provided wherein each such cell has a small circular horizontal cross-section of 1.0 microns or less in diameter and wherein the ferromagnetic free layer of each such cell has a magnetic anisotropy produced by a magnetic coupling with a thin antiferromagnetic layer that is formed on the free layer. The MTJ memory cell so provided is far less sensitive to shape irregularities and edge defects than cells of the prior art.

Abstract translation: 提供MTJ存储器单元和/或这种单元的阵列，其中每个这样的单元具有直径为1.0微米或更小的小的圆形水平横截面，并且其中每个这样的单元的铁磁性自由层具有由 与在自由层上形成的薄的反铁磁层的磁耦合。 如此提供的MTJ存储单元对于形状不规则和边缘缺陷的敏感性远低于现有技术的单元。

公开(公告)号：US20110284977A1

公开(公告)日：2011-11-24

申请号：US13136194

申请日：2011-07-26

Applicant: Tai Min ,  Cheng Horng ,  Po Kang Wang

Inventor： Tai Min ,  Cheng Horng ,  Po Kang Wang

IPC: H01L29/82

CPC classification number: H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/3218 ,  H01F10/3272 ,  H01F41/307 ,  H01L43/12

Abstract: An MRAM array of MTJ memory cells is provided wherein each such cell is a layered MTJ structure located at an intersection of a word and bit line and has a small circular horizontal cross-section of 1.0 microns or less in diameter and wherein the ferromagnetic free layer of each such cell has a magnetic anisotropy produced by a magnetic coupling with a thin antiferromagnetic layer that is formed on the free layer. The array of MTJ memory cells so provided is far less sensitive to shape irregularities and edge defects of individual cells than arrays of the prior art.

Abstract translation: 提供了MTJ存储器单元的MRAM阵列，其中每个这样的单元是位于字和位线的交叉点处的分层MTJ结构，并且具有直径为1.0微米或更小的小的圆形水平横截面，并且其中铁磁自由层 每个这样的电池具有由形成在自由层上的薄的反铁磁性层的磁耦合产生的磁各向异性。 如此提供的MTJ存储器单元的阵列比现有技术的阵列对单个单元的形状不规则和边缘缺陷的敏感性差。

公开(公告)号：US07599158B2

公开(公告)日：2009-10-06

申请号：US11716945

申请日：2007-03-12

Applicant: Po Kang Wang ,  Moris Dovek ,  Jibin Geng ,  Tai Min

Inventor： Po Kang Wang ,  Moris Dovek ,  Jibin Geng ,  Tai Min

IPC: G11B5/33 ,  G11B5/127

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  C21D1/04 ,  G11B5/3903 ,  G11B5/3932 ,  G11B2005/3996 ,  H01F10/3268 ,  H01F41/302 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49043 ,  Y10T29/49044

Abstract: As track density requirements for disk drives have grown more aggressive, GMR devices have been pushed to narrower track widths to match the track pitch of the drive width. Narrower track widths degrade stability, cause amplitude loss, due to the field originating from the hard bias structure, and side reading. This problem has been overcome by adding an additional layer of soft magnetic material above the hard bias layers. The added layer provides flux closure to the hard bias layers thereby preventing flux leakage into the gap region. A non-magnetic layer must be included to prevent exchange coupling to the hard bias layers. In at least one embodiment the conductive leads are used to accomplish this. A process for manufacturing the device is also described.

Abstract translation: 随着磁盘驱动器的磁道密度要求越来越高，GMR器件已被推到更窄的磁道宽度以匹配驱动器宽度的磁道间距。 较窄的轨道宽度会降低稳定性，导致振幅损失，这是由于源自硬偏置结构的场和侧读。 通过在硬偏压层上方添加一层附加的软磁材料已经克服了这个问题。 添加的层向硬偏置层提供磁通闭合，从而防止磁通量泄漏到间隙区域中。 必须包括非磁性层以防止与硬偏置层的交换耦合。 在至少一个实施例中，导电引线用于实现这一点。 还描述了用于制造该装置的方法。

公开(公告)号：US07203039B2

公开(公告)日：2007-04-10

申请号：US10856181

申请日：2004-05-28

Applicant: Po Kang Wang ,  Moris Dovek ,  Jibin Geng ,  Tai Min

Inventor： Po Kang Wang ,  Moris Dovek ,  Jibin Geng ,  Tai Min

IPC: G11B5/33 ,  G11B5/127

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  C21D1/04 ,  G11B5/3903 ,  G11B5/3932 ,  G11B2005/3996 ,  H01F10/3268 ,  H01F41/302 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49043 ,  Y10T29/49044

Abstract: As track density requirements for disk drives have grown more aggressive, GMR devices have been pushed to narrower track widths to match the track pitch of the drive width. Narrower track widths degrade stability, cause amplitude loss, due to the field originating from the hard bias structure, and side reading. This problem has been overcome by adding an additional layer of soft magnetic material above the hard bias layers. The added layer provides flux closure to the hard bias layers thereby preventing flux leakage into the gap region. A non-magnetic layer must be included to prevent exchange coupling to the hard bias layers. In at least one embodiment the conductive leads are used to accomplish this.

Abstract translation: 随着磁盘驱动器的磁道密度要求越来越高，GMR器件已被推到更窄的磁道宽度以匹配驱动器宽度的磁道间距。 较窄的轨道宽度会降低稳定性，导致振幅损失，这是由于源自硬偏置结构的场和侧读。 通过在硬偏压层上方添加一层附加的软磁材料已经克服了这个问题。 添加的层向硬偏置层提供磁通闭合，从而防止磁通量泄漏到间隙区域中。 必须包括非磁性层以防止与硬偏置层的交换耦合。 在至少一个实施例中，导电引线用于实现这一点。

公开(公告)号：US20120063214A1

公开(公告)日：2012-03-15

申请号：US12807611

申请日：2010-09-09

Applicant: Tai Min ,  Qiang Chen ,  Po Kang Wang

Inventor： Tai Min ,  Qiang Chen ,  Po Kang Wang

IPC: G11C11/00

CPC classification number: G11C11/161 ,  G11C11/1659 ,  G11C11/1675

Abstract: An MRAM array structure and a method of its operation that is not subject to accidental writing on half-selected elements. Each element of the MRAM is an MTJ (magnetic tunneling junction) cell operating in accord with an STT (spin torque transfer) scheme for changing its free layer magnetization state and each cell is patterned to have a C-shape in the horizontal plane. The cell thereby operates by C-mode switching to provide stability against accidental writing by half-selection. During operation, switching of a cell's magnetization is accomplished with the assist of the pulsed magnetic fields of additional word lines that are formed either orthogonal to or parallel to the existing bit lines and that can carry currents in either direction as required to provide the assist.

Abstract translation: MRAM阵列结构及其操作方法，不会在半选择元素上偶然写入。 MRAM的每个元件是根据用于改变其自由层磁化状态的STT（自旋转矩传递）方案操作的MTJ（磁性隧道结）单元，并且每个单元被图案化以在水平面中具有C形。 因此，电池通过C模式切换来操作，以通过半选择提供对意外写入的稳定性。 在操作期间，通过与现有位线正交或平行的附加字线的脉冲磁场的帮助来实现电池的磁化的切换，并且可以根据需要在任一方向上承载电流以提供辅助。

公开(公告)号：US07715224B2

公开(公告)日：2010-05-11

申请号：US11787330

申请日：2007-04-16

Applicant: Tai Min ,  Po Kang Wang

Inventor： Tai Min ,  Po Kang Wang

IPC: G11C11/00 ,  G11C11/14 ,  G11C11/15

CPC classification number: G11C11/16

Abstract: An MRAM that is not subject to accidental writing of half-selected memory elements is described, together with a method for its manufacture. The key features of this MRAM are a C-shaped memory element used in conjunction with a segmented bit line architecture.

Abstract translation: 描述了不会偶然写入半选择的存储元件的MRAM及其制造方法。 该MRAM的主要特征是与分段位线结构一起使用的C形存储元件。

公开(公告)号：US20090096043A1

公开(公告)日：2009-04-16

申请号：US11973751

申请日：2007-10-10

Applicant: Tai Min ,  Po Kang Wang

Inventor： Tai Min ,  Po Kang Wang

IPC: H01L43/08 ,  H01L43/12

CPC classification number: H01L43/08 ,  G11C11/1675 ,  H01L43/12

Abstract: We describe the manufacturing process for and structure of a CPP MTJ MRAM unit cell that utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer. The strength of the switching field, Hs of the cell is controlled by the magnetic anisotropy of the cell which, in turn, is controlled by a combination of the shape anisotropy and the stress and magnetostriction of the cell free layer. The coefficient of magnetostriction of the free layer can be adjusted by methods such as adding Nb or Hf to alloys of Ni, Fe, Co and B or by forming the free layer as a lamination of layers having different values of their coefficients of magnetostriction. Thus, by tuning the coefficient of magnetostriction of the cell free layer it is possible to produce a switching field of sufficient magnitude to render the cell thermally stable while maintaining a desirable switching current.

Abstract translation: 我们描述了使用自旋角动量转移作为改变自由层的磁矩方向的机制的CPP MTJ MRAM单元的制造过程和结构。 开关场的强度，电池的Hs由电池的磁各向异性控制，电池的磁各向异性又由形状各向异性和无电解层的应力和磁致伸缩的组合控制。 自由层的磁致伸缩系数可以通过添加Nb，Hf等Ni，Fe，Co，B的合金的方法来进行，也可以通过形成自由层作为其磁致伸缩系数不同的层的叠层来进行。 因此，通过调谐无电解层的磁致伸缩系数，可以产生足够大的开关场，使电池热稳定，同时保持理想的开关电流。