公开(公告)号：US20150155477A1

公开(公告)日：2015-06-04

申请号：US14618534

申请日：2015-02-10

Applicant: Jeong Heon PARK ,  Woo Chang LIM ,  Se Chung OH ,  Young Hyun KIM ,  Sang Hwan PARK ,  Jang Eun LEE

Inventor： Jeong Heon PARK ,  Woo Chang LIM ,  Se Chung OH ,  Young Hyun KIM ,  Sang Hwan PARK ,  Jang Eun LEE

IPC: H01L43/08 ,  H01L43/10 ,  H01L43/02

CPC classification number: H01L43/08 ,  G06F13/16 ,  G11C11/161 ,  G11C11/1659 ,  H01L43/02 ,  H01L43/10

Abstract: Provided is a magnetic tunneling junction device including a first structure including a magnetic layer; a second structure including at least two extrinsic perpendicular magnetization structures, each including a magnetic layer and; a perpendicular magnetization inducing layer on the magnetic layer; and a tunnel barrier between the first and second structures.

Abstract translation: 本发明提供一种包括具有磁性层的第一结构的磁性隧道接合装置; 包括至少两个外在垂直磁化结构的第二结构，每个包括磁性层; 磁性层上的垂直磁化诱导层; 以及第一和第二结构之间的隧道屏障。

公开(公告)号：US08772887B2

公开(公告)日：2014-07-08

申请号：US13475520

申请日：2012-05-18

Applicant: Woo-Chang Lim ,  Jang-Eun Lee ,  Se-Chung Oh ,  Woo-Jin Kim ,  Young-Hyun Kim ,  Jeong-Heon Park

Inventor： Woo-Chang Lim ,  Jang-Eun Lee ,  Se-Chung Oh ,  Woo-Jin Kim ,  Young-Hyun Kim ,  Jeong-Heon Park

IPC: H01L29/82 ,  H01L43/00

CPC classification number: H01L43/08

Abstract: A magnetic tunnel junction element is provided. The magnetic tunnel junction element has first magnetic layer and second magnetic layer formed adjacent, e.g., on lower and upper portions of an insulating layer, respectively and each having a perpendicular magnetic anisotropy, a magnetic field adjustment layer formed on the second magnetic layer and having a perpendicular magnetic anisotropy, and a bather layer formed between the magnetic field adjustment layer and the second magnetic layer. The second magnetic layer and the magnetic field adjustment layer are magnetically decoupled from each other.

Abstract translation: 提供磁性隧道结元件。 磁性隧道结元件分别具有第一磁性层和第二磁性层，该第一磁性层和第二磁性层分别形成在例如绝缘层的下部和上部上并且各自具有垂直的磁各向异性，磁场调节层形成在第二磁性层上并具有 垂直磁各向异性，以及形成在磁场调整层和第二磁性层之间的沐浴层。 第二磁性层和磁场调节层彼此磁耦合。

公开(公告)号：US08697484B2

公开(公告)日：2014-04-15

申请号：US13332093

申请日：2011-12-20

Applicant: Dmytro Apalkov ,  Alexey Vasilyevitch Khvalkovskiy ,  Vladimir Nikitin ,  Mohamad Towfik Krounbi ,  Xueti Tang ,  Se Chung Oh ,  Woo Chang Lim ,  Jang Eun Lee ,  Ki Woong Kim ,  Kyoung Sun Kim

Inventor： Dmytro Apalkov ,  Alexey Vasilyevitch Khvalkovskiy ,  Vladimir Nikitin ,  Mohamad Towfik Krounbi ,  Xueti Tang ,  Se Chung Oh ,  Woo Chang Lim ,  Jang Eun Lee ,  Ki Woong Kim ,  Kyoung Sun Kim

IPC: H01L29/82

CPC classification number: H01L43/08 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/10 ,  H01L43/12

Abstract: A method and system for setting the direction of pinned layers in a magnetic junction are described. In one aspect, a magnetic field greater than the coercivity of the layers in a pinned layer but less than the coupling field between the layers is applied. In another aspect the pinned layers are switched from an anti-dual state to a dual state using a spin transfer torque current. In another aspect, a magnetic junction having a partial perpendicular anisotropy (PPMA) layer in the pinned layer is provided. In some aspects, the PPMA layer is part of a synthetic antiferromagnetic structure. In some embodiments, a decoupling layer is provided between the PPMA layer and another ferromagnetic layer in the pinned layer.

Abstract translation: 描述了用于设置磁结中的钉扎层的方向的方法和系统。 一方面，施加大于被钉扎层中的层的矫顽力但小于层之间的耦合场的磁场。 在另一方面，使用自旋转移转矩电流将钉扎层从反双重状态切换到双重状态。 在另一方面，提供了在钉扎层中具有部分垂直各向异性（PPMA）层的磁性结。 在一些方面，PPMA层是合成反铁磁结构的一部分。 在一些实施方案中，在固着层中的PPMA层和另一铁磁层之间提供去耦层。

公开(公告)号：US08614125B2

公开(公告)日：2013-12-24

申请号：US12070219

申请日：2008-02-15

Applicant: Eun-Kyung Yim ,  In-Gyu Baek ,  Jang-Eun Lee ,  Se-Chung Oh ,  Kyung-Tae Nam ,  Jin-Shi Zhao

Inventor： Eun-Kyung Yim ,  In-Gyu Baek ,  Jang-Eun Lee ,  Se-Chung Oh ,  Kyung-Tae Nam ,  Jin-Shi Zhao

IPC: H01L29/788

CPC classification number: H01L45/1253 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/145 ,  H01L45/146

Abstract: A nonvolatile memory device includes a bottom electrode on a semiconductor substrate, a data storage layer on the bottom electrode, the data storage layer including a transition metal oxide, and a switching layer provided on a top surface and/or a bottom surface of the data storage layer, wherein a bond energy of material included in the switching layer and oxygen is more than a bond energy of a transition metal in the transition metal oxide and oxygen.

公开(公告)号：US20130154034A1

公开(公告)日：2013-06-20

申请号：US13332093

申请日：2011-12-20

Applicant: Dmytro Apalkov ,  Alexey Vasilyevitch Khvalkovskiy ,  Vladimir Nikitin ,  Mohamad Towfik Krounbi ,  Xueti Tang ,  Se Chung Oh ,  Woo Chang Lim ,  Jang Eun Lee ,  Ki Woong Kim ,  Kyoung Sun Kim

Inventor： Dmytro Apalkov ,  Alexey Vasilyevitch Khvalkovskiy ,  Vladimir Nikitin ,  Mohamad Towfik Krounbi ,  Xueti Tang ,  Se Chung Oh ,  Woo Chang Lim ,  Jang Eun Lee ,  Ki Woong Kim ,  Kyoung Sun Kim

IPC: H01L29/82 ,  H01L21/02

CPC classification number: H01L43/08 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/10 ,  H01L43/12

Abstract: A method and system for setting the direction of pinned layers in a magnetic junction are described. In one aspect, a magnetic field greater than the coercivity of the layers in a pinned layer but less than the coupling field between the layers is applied. In another aspect the pinned layers are switched from an anti-dual state to a dual state using a spin transfer torque current. In another aspect, a magnetic junction having a partial perpendicular anisotropy (PPMA) layer in the pinned layer is provided. In some aspects, the PPMA layer is part of a synthetic antiferromagnetic structure. In some embodiments, a decoupling layer is provided between the PPMA layer and another ferromagnetic layer in the pinned layer.

Abstract translation: 描述了用于设置磁结中的钉扎层的方向的方法和系统。 一方面，施加大于被钉扎层中的层的矫顽力但小于层之间的耦合场的磁场。 在另一方面，使用自旋转移转矩电流将钉扎层从反双重状态切换到双重状态。 在另一方面，提供了在钉扎层中具有部分垂直各向异性（PPMA）层的磁性结。 在一些方面，PPMA层是合成反铁磁结构的一部分。 在一些实施方案中，在固着层中的PPMA层和另一铁磁层之间提供去耦层。

公开(公告)号：US20120236631A1

公开(公告)日：2012-09-20

申请号：US13398617

申请日：2012-02-16

Applicant: Jeong Heon Park ,  Woo Chang Lim ,  Se Chung Oh ,  Woo Jin Kim ,  Sang Hwan Park ,  Jang Eun Lee

Inventor： Jeong Heon Park ,  Woo Chang Lim ,  Se Chung Oh ,  Woo Jin Kim ,  Sang Hwan Park ,  Jang Eun Lee

IPC: G11C11/14 ,  H01L29/82

CPC classification number: H01L43/08 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  H01L27/222 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  Y10S977/933 ,  Y10S977/935

Abstract: Provided is a magnetic tunneling junction device including a fixed magnetic structure; a free magnetic structure; and a tunnel barrier between the fixed magnetic structure and the free magnetic structure, at least one of the fixed magnetic structure and the free magnetic structure including a perpendicular magnetization preserving layer, a magnetic layer between the perpendicular magnetization preserving layer and the tunnel barrier, and a perpendicular magnetization inducing layer between the perpendicular magnetization preserving layer and the magnetic layer.

Abstract translation: 提供一种包括固定磁性结构的磁性隧道接合装置; 自由磁结构; 以及在所述固定磁性结构和所述自由磁性结构之间的隧道势垒，所述固定磁性结构和所述自由磁性结构中的至少一个包括垂直磁化保持层，所述垂直磁化保留层与所述隧道势垒之间的磁性层，以及 在垂直磁化保持层和磁性层之间的垂直磁化诱导层。

公开(公告)号：US08174875B2

公开(公告)日：2012-05-08

申请号：US13091610

申请日：2011-04-21

Applicant: In-Gyu Baek ,  Jang-Eun Lee ,  Se-Chung Oh ,  Kyung-Tae Nam ,  Jun-Ho Jeong

Inventor： In-Gyu Baek ,  Jang-Eun Lee ,  Se-Chung Oh ,  Kyung-Tae Nam ,  Jun-Ho Jeong

IPC: G11C11/00

CPC classification number: G11C11/15 ,  G11C11/005 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/5607 ,  G11C11/5678 ,  G11C13/00 ,  G11C13/0004 ,  G11C13/02 ,  H01L27/224 ,  H01L27/228 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/06 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/14 ,  H01L45/146 ,  H01L45/147 ,  Y10S977/754 ,  Y10S977/935

Abstract: An integrated circuit memory device may include an integrated circuit substrate, and a multi-bit memory cell on the integrated circuit substrate. The multi-bit memory cell may be configured to store a first bit of data by changing a first characteristic of the multi-bit memory cell and to store a second bit of data by changing a second characteristic of the multi-bit memory cell. Moreover, the first and second characteristics may be different. Related methods are also discussed.

Abstract translation: 集成电路存储器件可以包括集成电路衬底和集成电路衬底上的多位存储单元。 多位存储器单元可以被配置为通过改变多位存储单元的第一特性来存储第一位数据，并且通过改变多位存储单元的第二特性来存储第二位数据。 此外，第一和第二特征可以不同。 还讨论了相关方法。

公开(公告)号：US20110272380A1

公开(公告)日：2011-11-10

申请号：US13184127

申请日：2011-07-15

Applicant: Jun-Ho Jeong ,  Jang-Eun Lee ,  Woo-Jin Kim ,  Hee-Ju Shin ,  Yong-Hwan Ryu

Inventor： Jun-Ho Jeong ,  Jang-Eun Lee ,  Woo-Jin Kim ,  Hee-Ju Shin ,  Yong-Hwan Ryu

IPC: B44C1/22

CPC classification number: H01L27/228 ,  H01L43/12

Abstract: An example embodiment relates to a method of forming a pattern structure, including forming an object layer on a substrate, and forming a hard mask on the object layer. A plasma reactive etching process is performed on the object layer using an etching gas including a fluorine containing gas and ammonia (NH3) gas together with oxygen gas to form a pattern. The oxygen gas is used for suppressing the removal of the hard mask during the etching process.

Abstract translation: 示例性实施例涉及一种形成图案结构的方法，包括在基底上形成物体层，并在物体层上形成硬掩模。 使用包含含氟气体和氨（NH 3）气体的蚀刻气体与氧气一起在物体层上进行等离子体反应蚀刻工艺以形成图案。 氧气用于在蚀刻过程中抑制硬掩模的去除。

公开(公告)号：US20110194338A1

公开(公告)日：2011-08-11

申请号：US13091610

申请日：2011-04-21

Applicant: In-Gyu Baek ,  Jang-Eun Lee ,  Se-Chung Oh ,  Kyung-Tae Nam ,  Jun-Ho Jeong

Inventor： In-Gyu Baek ,  Jang-Eun Lee ,  Se-Chung Oh ,  Kyung-Tae Nam ,  Jun-Ho Jeong

IPC: G11C11/00

CPC classification number: G11C11/15 ,  G11C11/005 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/5607 ,  G11C11/5678 ,  G11C13/00 ,  G11C13/0004 ,  G11C13/02 ,  H01L27/224 ,  H01L27/228 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/06 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/14 ,  H01L45/146 ,  H01L45/147 ,  Y10S977/754 ,  Y10S977/935

Abstract: An integrated circuit memory device may include an integrated circuit substrate, and a multi-bit memory cell on the integrated circuit substrate. The multi-bit memory cell may be configured to store a first bit of data by changing a first characteristic of the multi-bit memory cell and to store a second bit of data by changing a second characteristic of the multi-bit memory cell. Moreover, the first and second characteristics may be different. Related methods are also discussed.

Abstract translation: 集成电路存储器件可以包括集成电路衬底和集成电路衬底上的多位存储单元。 多位存储器单元可以被配置为通过改变多位存储单元的第一特性来存储第一位数据，并且通过改变多位存储单元的第二特性来存储第二位数据。 此外，第一和第二特征可以不同。 还讨论了相关方法。

公开(公告)号：US07871866B2

公开(公告)日：2011-01-18

申请号：US12175602

申请日：2008-07-18

Applicant: Jun-Ho Jeong ,  Jang-Eun Lee ,  Se-Chung Oh ,  Kyung-Tae Nam ,  In-Gyu Baek

Inventor： Jun-Ho Jeong ,  Jang-Eun Lee ,  Se-Chung Oh ,  Kyung-Tae Nam ,  In-Gyu Baek

IPC: H01L21/332

CPC classification number: H01L27/24 ,  G11C13/003 ,  G11C2213/76 ,  H01L27/224

Abstract: Provided is a method of manufacturing a semiconductor device having a switching device capable of preventing a snake current. First, a transition metal oxide layer and a leakage control layer are alternately stacked on a substrate 1 to 20 times to form a varistor layer. The transition metal oxide layer is formed to contain an excessive transition metal compared to its stable state. The leakage control layer may be formed of one selected from the group consisting of a Mg layer, a Ta layer, an Al layer, a Zr layer, a Hf layer, a polysilicon layer, a conductive carbon group layer, and a Nb layer.

Abstract translation: 提供一种具有能够防止蛇电流的开关装置的半导体装置的制造方法。 首先，将过渡金属氧化物层和泄漏控制层交替层叠在基板上1〜20次，以形成可变电阻层。 与其稳定状态相比，过渡金属氧化物层形成为含有过量的过渡金属。 泄漏控制层可以由选自Mg层，Ta层，Al层，Zr层，Hf层，多晶硅层，导电性碳基层和Nb层中的一种形成。