Invention Application
- Patent Title: THREE-LAYER MAGNETIC ELEMENT, METHOD FOR THE PRODUCTION THEREOF, MAGNETIC FIELD SENSOR, MAGNETIC MEMORY, AND MAGNETIC LOGIC GATE USING SUCH AN ELEMENT
- Patent Title (中): 三层磁性元件，其制造方法，磁场传感器，磁记忆体和使用这些元件的磁逻辑门
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Application No.: US12903519Application Date: 2010-10-13
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Publication No.: US20110163743A1Publication Date: 2011-07-07
- Inventor: Bernard RODMACQ , Stéphane AUFFRET , Bernard DIENY , Lavinia Elena NISTOR
- Applicant: Bernard RODMACQ , Stéphane AUFFRET , Bernard DIENY , Lavinia Elena NISTOR
- Applicant Address: FR Paris FR Paris Cedex
- Assignee: Commissariat A L'Energie Atomique Et Aux Energie Alternatives,Centre National De La Recherche Scientifique
- Current Assignee: Commissariat A L'Energie Atomique Et Aux Energie Alternatives,Centre National De La Recherche Scientifique
- Current Assignee Address: FR Paris FR Paris Cedex
- Priority: FR08.53811 20080609
- Main IPC: G01R33/02
- IPC: G01R33/02 ; H01L29/82 ; H01L21/02 ; G01R33/06
Abstract:
This three-layer magnetic element comprises, on a substrate, a first oxide, hydride or nitride layer O having a metal magnetic layer M mounted thereon, the latter having either a second oxide, hydride or nitride layer O′, or a non-ferromagnetic metal layer M′ mounted thereon.Layer M is continuous, has a thickness of 1 to 5 nm and the magnetisation thereof is parallel to the layer plane in the absence of layers O and O′.There is, for a range of temperature equal to or greater than ambient temperature, interfacial magnetic anisotropy perpendicular to the layer plane on interfaces O/M and M/O′ that is capable of decreasing the effective demagnetising field of layer M or orienting the magnetisation of layer M in a manner substantially perpendicular to the layer plane.
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