公开(公告)号：US08008912B1

公开(公告)日：2011-08-30

申请号：US12336218

申请日：2008-12-16

Applicant: Changhe Shang

Inventor： Changhe Shang

IPC: G01R33/12

CPC classification number: G01R33/098

Abstract: A method of testing P2 stiffness of a magnetoresistance (MR) sensor stack including a P2 pinned layer is provided. The method comprises the step of applying an external magnetic field to the MR sensor stack. The external magnetic field is oriented substantially perpendicular to a magnetic field of the P2 pinned layer. The method further comprises varying an amplitude of the external magnetic field, measuring a change in a resistance of the MR sensor stack in response to the varying amplitude of the external magnetic field, and calculating the P2 stiffness based on the measured change in resistance.

Abstract translation: 提供了一种测试包括P2固定层的磁阻（MR）传感器堆的P2刚度的方法。 该方法包括将外部磁场施加到MR传感器堆叠的步骤。 外部磁场定向成基本垂直于P2钉扎层的磁场。 该方法还包括改变外部磁场的幅度，响应于外部磁场的变化的幅度来测量MR传感器堆叠的电阻的变化，以及基于所测量的电阻变化来计算P2刚度。

公开(公告)号：US08860407B2

公开(公告)日：2014-10-14

申请号：US13436732

申请日：2012-03-30

Applicant: Changhe Shang ,  Daniele Mauri ,  Kuok San Ho

Inventor： Changhe Shang ,  Daniele Mauri ,  Kuok San Ho

IPC: G01R33/12 ,  G11B5/455 ,  G11B5/31 ,  G01R31/28

CPC classification number: G01R31/2875 ,  G11B5/3166 ,  G11B5/455

Abstract: A method and system for testing a read transducer are described. The read transducer includes a read sensor fabricated on a wafer. A system includes a test structure that resides on the wafer. The test structure includes a test device and a heater. The test device corresponds to the read sensor. The heater is in proximity to the test device and is configured to heat the test device substantially without heating the read sensor. Thus, the test structure allows for on-wafer testing of the test device at a plurality of temperatures above an ambient temperature.

Abstract translation: 描述了用于测试读取换能器的方法和系统。 读取换能器包括制造在晶片上的读取传感器。 系统包括驻留在晶片上的测试结构。 测试结构包括测试设备和加热器。 测试装置对应于读取传感器。 加热器靠近测试装置，并且被配置为基本上加热测试装置而不加热读取传感器。 因此，测试结构允许在高于环境温度的多个温度下对测试装置进行片上测试。

公开(公告)号：US07389577B1

公开(公告)日：2008-06-24

申请号：US11768883

申请日：2007-06-26

Applicant: Changhe Shang ,  Yun-Fei Li ,  Yining Hu ,  Yong Shen

Inventor： Changhe Shang ,  Yun-Fei Li ,  Yining Hu ,  Yong Shen

IPC: G11B5/127 ,  H04R31/00

CPC classification number: G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3906 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49044

Abstract: A method to fabricate a tunneling magnetoresistive (TMR) read transducer is disclosed. An insulative layer is deposited on a wafer substrate, and a bottom lead is deposited over the insulative layer. A laminated TMR layer, having a plurality of laminates, is deposited over the bottom lead. A TMR sensor having a stripe height is defined in the TMR layer, and a parallel resistor and first and second shunt resistors are also defined in the TMR layer. A top lead is deposited over the TMR sensor. The parallel resistor is electrically connected to the bottom lead and to the top lead. The first shunt resistor is electrically connected to the bottom lead and the wafer substrate, and the second shunt resistor is electrically connected to the top lead and the wafer substrate.

Abstract translation: 公开了一种制造隧道磁阻（TMR）读出传感器的方法。 绝缘层沉积在晶片衬底上，底部引线沉积在绝缘层上。 具有多个层压体的叠层TMR层沉积在底部引线上。 具有条纹高度的TMR传感器定义在TMR层中，并且还在TMR层中定义并联电阻器和第一和第二分流电阻器。 顶部引线沉积在TMR传感器上。 并联电阻器电连接到底部引线和顶部引线。 第一分流电阻器电连接到底部引线和晶片衬底，并且第二分流电阻器电连接到顶部引线和晶片衬底。

公开(公告)号：US06596101B2

公开(公告)日：2003-07-22

申请号：US09970402

申请日：2001-10-03

Applicant: Timothy P. Weihs ,  Robert Cammarata ,  Chia-Ling Chien ,  Changhe Shang

Inventor： Timothy P. Weihs ,  Robert Cammarata ,  Chia-Ling Chien ,  Changhe Shang

IPC: C21D800

CPC classification number: H01F1/15316 ,  C21D6/007 ,  C21D8/1233 ,  C21D8/1272 ,  C21D2201/03 ,  C22C30/00 ,  C22C38/10 ,  C22C38/12 ,  C22F1/00 ,  C22F1/10 ,  H01F1/147 ,  H01F1/15333

Abstract: Preferred embodiments of the invention provide new nanostructured materials and methods for preparing nanostructured materials having increased tensile strength and ductility, increased hardness, and very fine grain sizes making such materials useful for a variety of applications such as rotors, electric generators, magnetic bearings, aerospace and many other structural and nonstructural applications. The preferred nanostructured materials have a tensile yield strength from at least about 1.9 to about 2.3 GPa and a tensile ductility from at least 1%. Preferred embodiments of the invention also provide a method of making a nanostructured material comprising melting a metallic material, solidifying the material, deforming the material, forming a plurality of dislocation cell structures, annealing the deformed material at a temperature from about 0.30 to about 0.70 of its absolute melting temperature, and cooling the material.

公开(公告)号：US08151441B1

公开(公告)日：2012-04-10

申请号：US12056409

申请日：2008-03-27

Applicant: Steven C. Rudy ,  Matthew R. Gibbons ,  Curtis V. Macchioni ,  Yun-Fei Li ,  Changhe Shang ,  Carlos Corona

Inventor： Steven C. Rudy ,  Matthew R. Gibbons ,  Curtis V. Macchioni ,  Yun-Fei Li ,  Changhe Shang ,  Carlos Corona

IPC: G11B5/455 ,  G11B5/187

CPC classification number: G11B5/455 ,  G11B5/3166 ,  G11B5/3169 ,  Y10T29/49036 ,  Y10T29/49037 ,  Y10T29/49041 ,  Y10T29/49048

Abstract: A method for providing an electronic lapping guide (ELG) for a structure in a magnetic transducer are described. The structure has a front edge and a back edge. The ELG includes a stripe having a top edge and a bottom edge. The method includes calibrating a sheet resistance of the stripe and calibrating an offset of the top edge of the stripe from the back edge of the structure. The method further includes terminating the lapping based at least on the sheet resistance and offset of the ELG.

Abstract translation: 描述了一种用于为磁换能器中的结构提供电子研磨导轨（ELG）的方法。 该结构具有前边缘和后边缘。 ELG包括具有顶部边缘和底部边缘的条纹。 该方法包括校准条带的薄层电阻并且校准条纹的顶边缘与结构的后边缘的偏移。 该方法还包括至少基于ELG的薄层电阻和偏移终止研磨。

公开(公告)号：US09153260B1

公开(公告)日：2015-10-06

申请号：US13419313

申请日：2012-03-13

Applicant: Steven C. Rudy ,  Matthew R. Gibbons ,  Curtis V. Macchioni ,  Yun-Fei Li ,  Changhe Shang ,  Carlos Corona

Inventor： Steven C. Rudy ,  Matthew R. Gibbons ,  Curtis V. Macchioni ,  Yun-Fei Li ,  Changhe Shang ,  Carlos Corona

IPC: G11B5/31 ,  G11B5/455

CPC classification number: G11B5/455 ,  G11B5/3166 ,  G11B5/3169 ,  Y10T29/49036 ,  Y10T29/49037 ,  Y10T29/49041 ,  Y10T29/49048

Abstract: A slider includes a transducer including a magnetic structure having a front edge and a back edge. The slider further includes an electronic lapping guide (ELG) substantially coplanar with the magnetic structure and having a top edge and a bottom edge. The slider further includes a plurality of pads configured to calibrate a sheet resistance of the ELG and an offset of the ELG.

Abstract translation: 滑块包括具有前缘和后缘的磁结构的换能器。 滑块还包括与磁性结构基本上共面并具有顶部边缘和底部边缘的电子研磨导向器（ELG）。 滑块还包括多个衬垫，其被配置成校准ELG的薄层电阻和ELG的偏移。

公开(公告)号：US08611054B1

公开(公告)日：2013-12-17

申请号：US13444723

申请日：2012-04-11

Applicant: Changhe Shang ,  Daniele Mauri ,  Kuok San Ho ,  Anup G. Roy ,  Ming Mao

Inventor： Changhe Shang ,  Daniele Mauri ,  Kuok San Ho ,  Anup G. Roy ,  Ming Mao

IPC: G11B5/39

CPC classification number: G11B5/3932 ,  G01R33/093 ,  G11B5/3909 ,  G11B2005/3996 ,  H01F10/3218 ,  H01F10/3254

Abstract: A magnetic read transducer is described with a magnetoresistive sensor that has a free layer, and an antiferromagnetically-coupled (AFC) soft bias layer for magnetically biasing the free layer. The free layer has a first edge in a track width direction along an air-bearing surface (ABS). At least a portion of the AFC soft bias layer is conformal to at least a portion of a second edge of the free layer, and situated to form a magnetic moment at an angle with respect to a center line of the free layer. The center line of the free layer extends in the same direction as the free layer first edge that is in the track width direction along the ABS.

Abstract translation: 用具有自由层的磁阻传感器和用于磁偏置自由层的反铁磁耦合（AFC）软偏置层来描述磁读取传感器。 自由层具有沿空气轴承表面（ABS）的轨道宽度方向上的第一边缘。 AFC柔性偏置层的至少一部分与自由层的第二边缘的至少一部分共形，并且位于相对于自由层的中心线形成一个角度的磁矩。 自由层的中心线沿与ABS沿轨道宽度方向的自由层第一边缘相同的方向延伸。

公开(公告)号：US20130257421A1

公开(公告)日：2013-10-03

申请号：US13436732

申请日：2012-03-30

Applicant: CHANGHE SHANG ,  DANIELE MAURI ,  KUOK SAN HO

Inventor： CHANGHE SHANG ,  DANIELE MAURI ,  KUOK SAN HO

IPC: G01R31/28 ,  G11B5/455

CPC classification number: G01R31/2875 ,  G11B5/3166 ,  G11B5/455

Abstract: A method and system for testing a read transducer are described. The read transducer includes a read sensor fabricated on a wafer. A system includes a test structure that resides on the wafer. The test structure includes a test device and a heater. The test device corresponds to the read sensor. The heater is in proximity to the test device and is configured to heat the test device substantially without heating the read sensor. Thus, the test structure allows for on-wafer testing of the test device at a plurality of temperatures above an ambient temperature.

Abstract translation: 描述了用于测试读取换能器的方法和系统。 读取换能器包括制造在晶片上的读取传感器。 系统包括驻留在晶片上的测试结构。 测试结构包括测试设备和加热器。 测试装置对应于读取传感器。 加热器靠近测试装置，并且被配置为基本上加热测试装置而不加热读取传感器。 因此，测试结构允许在高于环境温度的多个温度下对测试装置进行片上测试。