公开(公告)号：US08871365B2

公开(公告)日：2014-10-28

申请号：US13406972

申请日：2012-02-28

Applicant: Yu-Jen Wang ,  Witold Kula ,  Ru Ying Tong ,  Guenole Jan

Inventor： Yu-Jen Wang ,  Witold Kula ,  Ru Ying Tong ,  Guenole Jan

IPC: H01F10/32 ,  G01R33/09 ,  G11C11/15 ,  G11B5/39

CPC classification number: H01L43/12 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/3909 ,  G11B5/3929 ,  G11B5/66 ,  G11B5/84 ,  G11C11/15 ,  G11C11/161 ,  H01F10/123 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/3295 ,  H01F41/305 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H03B15/006 ,  Y10T428/1107 ,  Y10T428/1121 ,  Y10T428/1143

Abstract: Enhanced Hc and Hk in addition to higher thermal stability to 400° C. are achieved in magnetic devices by adding dusting layers on top and bottom surfaces of a spacer in a synthetic antiferromagnetic (SAF) structure to give a RL1/DL1/spacer/DL2/RL2 reference layer configuration where RL1 and RL2 layers exhibit perpendicular magnetic anisotropy (PMA), the spacer induces antiferromagnetic coupling between RL1 and RL2, and DL1 and DL2 are dusting layers that enhance PMA. RL1 and RL2 layers are selected from laminates such as (Ni/Co)n, L10 alloys, or rare earth-transition metal alloys. The reference layer may be incorporated in STT-MRAM memory elements or in spintronic devices including a spin transfer oscillator. Dusting layers and a similar SAF design may be employed in a free layer for Ku enhancement and to increase the retention time of a memory cell.

Abstract translation: 通过在合成反铁磁（SAF）结构中在间隔物的顶表面和底表面上添加除尘层，得到RL1 / DL1 /间隔物/ DL2，在磁性器件中，除了通过在400℃下的更高的热稳定性之外，增强了Hc和Hk / RL2参考层配置，其中RL1和RL2层表现出垂直的磁各向异性（PMA），间隔物引起RL1和RL2之间的反铁磁耦合，DL1和DL2是增强PMA的除尘层。 RL1和RL2层选自诸如（Ni / Co）n，L10合金或稀土 - 过渡金属合金的层压体。 参考层可以并入STT-MRAM存储元件或包括自旋转移振荡器的自旋电子器件中。 可以在用于Ku增强的自由层中使用除尘层和类似的SAF设计，并增加存储器单元的保留时间。

公开(公告)号：US20140070342A1

公开(公告)日：2014-03-13

申请号：US13614212

申请日：2012-09-13

Applicant: Gurtej S. Sandhu ,  Witold Kula ,  Wayne I. Kinney

Inventor： Gurtej S. Sandhu ,  Witold Kula ,  Wayne I. Kinney

IPC: H01L43/12 ,  H01L29/82

CPC classification number: H01L43/02 ,  H01L27/222 ,  H01L27/224 ,  H01L27/226 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: Methods of forming memory cells, magnetic memory cell structures, and arrays of magnetic memory cell structures are disclosed. Embodiments of the methods include patterning a precursor structure to form a stepped structure including at least an upper discrete feature section and a lower feature section with a broader width, length, or both than the upper discrete feature section. The method uses patterning acts directed along a first axis, e.g., an x-axis, and then along a second axis, e.g., a y-axis, that is perpendicular to or about perpendicular to the first axis. The patterning acts may therefore allow for more unifoimity between a plurality of formed, neighboring cell core structures, even at dimensions below about thirty nanometers. Magnetic memory structures and memory cell arrays are also disclosed.

Abstract translation: 公开了形成存储单元，磁存储单元结构和磁存储单元结构阵列的方法。 方法的实施例包括图案化前体结构以形成包括至少上部离散特征部分和具有更宽的宽度，长度或两者比较高离散特征部分的下部特征部分的阶梯式结构。 该方法使用沿着第一轴线例如x轴，然后沿着垂直于第一轴线或垂直于第一轴线的第二轴线，例如y轴定向的图案化动作。 因此，即使在低于约三十纳米的尺寸下，图案化动作也可允许在多个形成的相邻电池芯结构之间的更大的均匀性。 还公开了磁存储器结构和存储单元阵列。

公开(公告)号：US20130334631A1

公开(公告)日：2013-12-19

申请号：US13527262

申请日：2012-06-19

Applicant: Wayne I. Kinney ,  Witold Kula ,  Stephen J. Kramer

Inventor： Wayne I. Kinney ,  Witold Kula ,  Stephen J. Kramer

IPC: H01L29/82 ,  G11B5/673 ,  G11B5/65 ,  H01L21/34 ,  G11B5/66

CPC classification number: H01L27/222 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/3218 ,  H01F10/329 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: Memory cells are disclosed. Magnetic regions within the memory cells include an alternating structure of magnetic sub-regions and coupler sub-regions. The coupler material of the coupler sub-regions antiferromagnetically couples neighboring magnetic sub-regions and effects or encourages a vertical magnetic orientation exhibited by the neighboring magnetic sub-regions. Neighboring magnetic sub-regions, spaced from one another by a coupler sub-region, exhibit oppositely-directed magnetic orientations. The magnetic and coupler sub-regions may each be of a thickness tailored to form the magnetic region in a compact structure. Interference between magnetic dipole fields emitted from the magnetic region on switching of a free region in the memory cell may be reduced or eliminated. Also disclosed are semiconductor device structures, spin torque transfer magnetic random access memory (STT-MRAM) systems, and methods of fabrication.

Abstract translation: 公开了存储单元。 存储单元内的磁性区域包括磁性子区域和耦合器子区域的交替结构。 耦合器子区域的耦合器材料反铁磁耦合相邻磁性子区域并且影响或促进相邻磁性子区域呈现的垂直磁性取向。 通过耦合器子区彼此间隔开的相邻的磁子区域表现出相反方向的磁取向。 磁性和耦合器子区域可以各自具有被调整以在紧凑结构中形成磁性区域的厚度。 可以减少或消除在切换存储单元中的自由区域时从磁性区域发射的磁偶极子场之间的干扰。 还公开了半导体器件结构，自旋扭矩传递磁随机存取存储器（STT-MRAM）系统和制造方法。

公开(公告)号：US20120205758A1

公开(公告)日：2012-08-16

申请号：US12931866

申请日：2011-02-11

Applicant: Guenole Jan ,  Ru Ying Tong ,  Witold Kula ,  Cheng Horng

Inventor： Guenole Jan ,  Ru Ying Tong ,  Witold Kula ,  Cheng Horng

IPC: H01L29/82 ,  H01L21/8246

CPC classification number: H01L29/66984 ,  B82Y40/00 ,  G11C11/16 ,  G11C11/161 ,  H01F10/1933 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/3295 ,  H01F41/303 ,  H01L29/82 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic element is disclosed wherein first and second interfaces of a free layer with a Hk enhancing layer and tunnel barrier, respectively, produce enhanced surface perpendicular anisotropy to lower switching current or increase thermal stability in a magnetic tunnel junction (MTJ). In a MTJ with a bottom spin valve configuration where the Hk enhancing layer is an oxide, the capping layer contacting the Hk enhancing layer is selected to have a free energy of oxide formation substantially greater than that of the oxide. The free layer may be a single layer or composite comprised of an Fe rich alloy such as Co20Fe60B20. With a thin free layer, the interfacial perpendicular anisotropy may dominate the shape anisotropy to generate a magnetization perpendicular to the planes of the layers. The magnetic element may be part of a spintronic device or serve as a propagation medium in a domain wall motion device.

Abstract translation: 公开了一种磁性元件，其中具有Hk增强层和隧道势垒的自由层的第一和第二界面分别产生增强的表面垂直各向异性以降低开关电流或增加磁性隧道结（MTJ）中的热稳定性。 在具有底部自旋阀结构的MTJ中，其中Hk增强层是氧化物，选择与Hk增强层接触的覆盖层，以使氧化物形成的自由能基本上大于氧化物的自由能。 自由层可以是由富含Fe的合金如Co20Fe60B20组成的单层或复合材料。 利用薄的自由层，界面垂直各向异性可以支配形状各向异性以产生垂直于层的平面的磁化。 磁性元件可以是自旋电子器件的一部分或用作域壁运动装置中的传播介质。

公开(公告)号：US08176622B2

公开(公告)日：2012-05-15

申请号：US12657775

申请日：2010-01-27

Applicant: Cheng T. Horng ,  Ru-Ying Tong ,  Chyu-Jiuh Torng ,  Witold Kula

Inventor： Cheng T. Horng ,  Ru-Ying Tong ,  Chyu-Jiuh Torng ,  Witold Kula

IPC: G11B5/127 ,  H04R31/00

CPC classification number: H01F10/3254 ,  B82Y25/00 ,  G11B5/3163 ,  G11B5/3906 ,  G11C11/161 ,  H01F10/3281 ,  H01F10/3295 ,  H01F41/325 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

Abstract: A process for manufacturing a high performance MTJ it is described: A first cap layer of NiFeHf is deposited on the free layer, followed by a second cap layer of Ru on Ta. The device is then heated so that oxygen trapped in the free layer diffuses into the NiFeHf layer, thereby sharpening the interface between the tunnel barrier layer and the free layer.

Abstract translation: 描述了一种用于制造高性能MTJ的方法：将NiFeHf的第一覆盖层沉积在自由层上，随后是Ta上的Ru的第二盖层。 然后加热该装置，使得在自由层中捕获的氧气扩散到NiFeHf层中，从而锐化隧道势垒层和自由层之间的界面。

公开(公告)号：US08058698B2

公开(公告)日：2011-11-15

申请号：US12803189

申请日：2010-06-21

Applicant: Cheng T. Horng ,  Ru-Ying Tong ,  Chyu-Jiuh Torng ,  Witold Kula

Inventor： Cheng T. Horng ,  Ru-Ying Tong ,  Chyu-Jiuh Torng ,  Witold Kula

IPC: H01L29/82 ,  G11C11/00

CPC classification number: H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/3272 ,  H01F10/329 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/10 ,  H01L43/12

Abstract: An STT-MTJ MRAM cell that utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer. The device includes an IrMn pinning layer, a SyAP pinned layer, a naturally oxidized, crystalline MgO tunneling barrier layer that is formed on an Ar-ion plasma smoothed surface of the pinned layer and, in one embodiment, a free layer that is an amorphous layer of Co60Fe20B20 of approximately 20 angstroms thickness formed between two crystalline layers of Fe of 3 and 6 angstroms thickness respectively. The free layer has a low Gilbert damping factor and a very strong polarizing action on conduction electrons. The resulting cell has a low critical current, a high dR/R and a plurality of such cells will exhibit a low variation of both resistance and pinned layer magnetization angular dispersion.

Abstract translation: 利用转移自旋角动量作为改变自由层的磁矩方向的机构的STT-MTJ MRAM单元。 该器件包括形成在钉扎层的Ar离子等离子体平滑表面上的IrMn钉扎层，SyAP钉扎层，自然氧化的结晶的MgO隧道势垒层，在一个实施例中，是非晶形的自由层 分别在3和6埃厚度的Fe的两个结晶层之间形成大约20埃厚度的Co60Fe20B20层。 自由层具有低的吉尔伯特衰减因子和对传导电子的非常强的偏振作用。 所得到的电池具有低临界电流，高dR / R，并且多个这样的电池将呈现电阻和钉扎层磁化角分散的低变化。

公开(公告)号：US07713755B1

公开(公告)日：2010-05-11

申请号：US12316501

申请日：2008-12-11

Applicant: Rongfu Xiao ,  Ruth Tong ,  Witold Kula ,  Chyu-Jiuh Torng

Inventor： Rongfu Xiao ,  Ruth Tong ,  Witold Kula ,  Chyu-Jiuh Torng

IPC: H01L21/00

CPC classification number: H01L43/12

Abstract: A high-amplitude magnetic angle sensor is described along with a process for its manufacture. A thin tantalum nitride hard mask, used to pattern the device, is left in place within the completed structure but, by first converting most of it to tantalum oxide, its effect on current shunting is greatly reduced.

Abstract translation: 描述了高振幅磁角传感器及其制造方法。 用于将器件图案化的薄氮化钽硬掩模在完成的结构内留在原位，但是通过首先将其大部分转换为氧化钽，其对电流分流的影响大大降低。

公开(公告)号：US20090173977A1

公开(公告)日：2009-07-09

申请号：US12006889

申请日：2008-01-07

Applicant: Rongfu Xiao ,  Chyu-Jiuh Torng ,  Tom Zhong ,  Witold Kula

Inventor： Rongfu Xiao ,  Chyu-Jiuh Torng ,  Tom Zhong ,  Witold Kula

IPC: H01L43/00 ,  H01L29/82 ,  H01L43/12 ,  H01L21/467

CPC classification number: H01L43/12 ,  H01L43/08

Abstract: An MTJ cell without footings and free from electrical short-circuits across a tunneling barrier layer is formed by using a Ta hard mask layer and a combination of etches. A first etch patterns the Ta hard mask, while a second etch uses O2 applied in a single high power process at two successive different power levels. A first power level of between approximately 200 W and 500 W removes BARC, photoresist and Ta residue from the first etch, the second power level, between approximately 400 W and 600 W continues an etch of the stack layers and forms a protective oxide around the etched sides of the stack. Finally, an etch using a carbon, hydrogen and oxygen gas completes the etch while the oxide layer protects the cell from short-circuits across the lateral edges of the barrier layer.

Abstract translation: 通过使用Ta硬掩模层和蚀刻的组合，形成没有底脚并且穿过隧道势垒层的电短路的MTJ电池。 第一蚀刻图案Ta硬掩模，而第二蚀刻使用在两个连续的不同功率水平下在单个高功率过程中施加的O2。 在大约200W至500W之间的第一功率电平从第一蚀刻去除BARC，光致抗蚀剂和Ta残留物，第二功率电平在大约400W至600W之间，继续蚀刻叠层，并在其周围形成保护氧化物 蚀刻边的堆叠。 最后，使用碳，氢和氧气的蚀刻完成了蚀刻，而氧化物层保护电池免受横跨阻挡层的侧边缘的短路。

公开(公告)号：US20090108383A1

公开(公告)日：2009-04-30

申请号：US11981127

申请日：2007-10-31

Applicant: Cheng T. Horng ,  Ru-Ying Tong ,  Chyu-Jiuh Torng ,  Witold Kula

Inventor： Cheng T. Horng ,  Ru-Ying Tong ,  Chyu-Jiuh Torng ,  Witold Kula

IPC: H01L29/82 ,  H01L21/8246

CPC classification number: H01L43/10 ,  B82Y10/00 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

Abstract: A STT-RAM MTJ that minimizes spin-transfer magnetization switching current (Jc) is disclosed. The MTJ has a MgO tunnel barrier layer formed with a natural oxidation process to achieve a low RA (10 ohm-um2) and a Fe or Fe/CoFeB/Fe free layer which provides a lower intrinsic damping constant than a CoFeB free layer. A Fe, FeB, or Fe/CoFeB/Fe free layer when formed with a MgO tunnel barrier (radical oxidation process) and a CoFeB AP1 pinned layer in a MRAM MTJ stack annealed at 360° C. provides a high dR/R (TMR)>100% and a substantial improvement in read margin with a TMR/Rp_cov=20. High speed measurement of 100 nm×200 nm oval STT-RAM MTJs has shown a Jc0 for switching a Fe free layer is one half that for switching an amorphous CO40Fe40B20 free layer. A Fe/CoFeB/Fe free layer configuration allows the Hc value to be increased for STT-RAM applications.

Abstract translation: 公开了使自旋转移磁化开关电流（Jc）最小化的STT-RAM MTJ。 MTJ具有形成有自然氧化工艺的MgO隧道阻挡层，以实现低的RA（10欧姆 - um2）和不含CoFeB自由层的较低的固有阻尼常数的Fe或Fe / CoFeB / Fe自由层。 当在360℃退火的MRAM MTJ堆叠中形成具有MgO隧道势垒（自由基氧化法）和CoFeB AP1钉扎层的Fe，FeB或Fe / CoFeB / Fe自由层时，提供高dR / R（TMR ）> 100％，TMR / Rp_cov = 20时读取余量大幅度提高。 100 nmx200 nm椭圆形STT-RAM MTJ的高速测量显示，用于切换无Fe层的Jc0是用于切换无定形CO40Fe40B20自由层的一半。 Fe / CoFeB / Fe自由层配置允许为STT-RAM应用增加Hc值。

公开(公告)号：US06954342B2

公开(公告)日：2005-10-11

申请号：US09846707

申请日：2001-04-30

Applicant: Witold Kula ,  Alexander Zeltser

Inventor： Witold Kula ,  Alexander Zeltser

IPC: G01R33/09 ,  G11B5/012 ,  G11B5/39 ,  G11B5/33

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/012 ,  G11B5/3903 ,  G11B2005/3996

Abstract: A spin valve sensor system and a method for fabricating the same are provided. Such spin valve sensor includes a pinned layer having a pinned layer magnetization. Also included is a free layer disposed adjacent the pinned layer. The free layer has a free layer magnetization perpendicular to the pinned layer magnetization in the absence of an external field. A pinning layer is disposed adjacent the pinned layer for fixing the pinned layer magnetization. Further included is an underlayer disposed adjacent the pinning layer. Such underlayer comprises NiFeX. Disposed adjacent the underlayer and the pinning layer is an upper layer. The upper layer comprises a material selected from the group consisting of NiFe and CoFe for increasing a GMR ratio associated with the SV sensor.

Abstract translation: 提供一种自旋阀传感器系统及其制造方法。 这种自旋阀传感器包括具有钉扎层磁化的钉扎层。 还包括邻近被钉扎层设置的自由层。 自由层在没有外部场的情况下具有垂直于被钉扎层磁化的自由层的磁化。 钉扎层邻近被钉扎层设置以固定被钉扎层的磁化。 还包括设置在钉扎层附近的底层。 这种底层包括NiFeX。 邻近下层设置并且钉扎层是上层。 上层包括选自NiFe和CoFe的材料，用于增加与SV传感器相关联的GMR比。