Invention Application
US20090108383A1 High performance MTJ element for conventional MRAM and for STT-RAM and a method for making the same
有权
用于常规MRAM和STT-RAM的高性能MTJ元件及其制造方法
- Patent Title: High performance MTJ element for conventional MRAM and for STT-RAM and a method for making the same
- Patent Title (中): 用于常规MRAM和STT-RAM的高性能MTJ元件及其制造方法
-
Application No.: US11981127Application Date: 2007-10-31
-
Publication No.: US20090108383A1Publication Date: 2009-04-30
- Inventor: Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
- Applicant: Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
- Assignee: MagIC Technologies, Inc.
- Current Assignee: MagIC Technologies, Inc.
- Main IPC: H01L29/82
- IPC: H01L29/82 ; H01L21/8246
Abstract:
A STT-RAM MTJ that minimizes spin-transfer magnetization switching current (Jc) is disclosed. The MTJ has a MgO tunnel barrier layer formed with a natural oxidation process to achieve a low RA (10 ohm-um2) and a Fe or Fe/CoFeB/Fe free layer which provides a lower intrinsic damping constant than a CoFeB free layer. A Fe, FeB, or Fe/CoFeB/Fe free layer when formed with a MgO tunnel barrier (radical oxidation process) and a CoFeB AP1 pinned layer in a MRAM MTJ stack annealed at 360° C. provides a high dR/R (TMR)>100% and a substantial improvement in read margin with a TMR/Rp_cov=20. High speed measurement of 100 nm×200 nm oval STT-RAM MTJs has shown a Jc0 for switching a Fe free layer is one half that for switching an amorphous CO40Fe40B20 free layer. A Fe/CoFeB/Fe free layer configuration allows the Hc value to be increased for STT-RAM applications.
Public/Granted literature
- US08372661B2 High performance MTJ element for conventional MRAM and for STT-RAM and a method for making the same Public/Granted day:2013-02-12
Information query
IPC分类:
