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    Underlayer for high amplitude spin valve sensors
    4.
    发明授权
    Underlayer for high amplitude spin valve sensors 有权
    用于高振幅自旋阀传感器的底层

    公开(公告)号：US06954342B2

    公开(公告)日：2005-10-11

    申请号：US09846707

    申请日：2001-04-30

    Applicant: Witold Kula ,  Alexander Zeltser

    Inventor： Witold Kula ,  Alexander Zeltser

    IPC: G01R33/09 ,  G11B5/012 ,  G11B5/39 ,  G11B5/33

    CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/012 ,  G11B5/3903 ,  G11B2005/3996

    Abstract: A spin valve sensor system and a method for fabricating the same are provided. Such spin valve sensor includes a pinned layer having a pinned layer magnetization. Also included is a free layer disposed adjacent the pinned layer. The free layer has a free layer magnetization perpendicular to the pinned layer magnetization in the absence of an external field. A pinning layer is disposed adjacent the pinned layer for fixing the pinned layer magnetization. Further included is an underlayer disposed adjacent the pinning layer. Such underlayer comprises NiFeX. Disposed adjacent the underlayer and the pinning layer is an upper layer. The upper layer comprises a material selected from the group consisting of NiFe and CoFe for increasing a GMR ratio associated with the SV sensor.

    Abstract translation: 提供一种自旋阀传感器系统及其制造方法。 这种自旋阀传感器包括具有钉扎层磁化的钉扎层。 还包括邻近被钉扎层设置的自由层。 自由层在没有外部场的情况下具有垂直于被钉扎层磁化的自由层的磁化。 钉扎层邻近被钉扎层设置以固定被钉扎层的磁化。 还包括设置在钉扎层附近的底层。 这种底层包括NiFeX。 邻近下层设置并且钉扎层是上层。 上层包括选自NiFe和CoFe的材料，用于增加与SV传感器相关联的GMR比。

    Methods of forming magnetic memory cells
    5.
    发明授权
    Methods of forming magnetic memory cells 有权
    形成磁记忆单元的方法

    公开(公告)号：US09373775B2

    公开(公告)日：2016-06-21

    申请号：US13614212

    申请日：2012-09-13

    Applicant: Gurtej S. Sandhu ,  Witold Kula ,  Wayne I. Kinney

    Inventor： Gurtej S. Sandhu ,  Witold Kula ,  Wayne I. Kinney

    IPC: H01L27/20 ,  H01L43/08 ,  H01L43/12 ,  H01L27/22

    CPC classification number: H01L43/02 ,  H01L27/222 ,  H01L27/224 ,  H01L27/226 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

    Abstract: Methods of forming memory cells, magnetic memory cell structures, and arrays of magnetic memory cell structures are disclosed. Embodiments of the methods include patterning a precursor structure to form a stepped structure including at least an upper discrete feature section and a lower feature section with a broader width, length, or both than the upper discrete feature section. The method uses patterning acts directed along a first axis, e.g., an x-axis, and then along a second axis, e.g., a y-axis, that is perpendicular to or about perpendicular to the first axis. The patterning acts may therefore allow for more unifoimity between a plurality of formed, neighboring cell core structures, even at dimensions below about thirty nanometers. Magnetic memory structures and memory cell arrays are also disclosed.

    Abstract translation: 公开了形成存储单元，磁存储单元结构和磁存储单元结构阵列的方法。 方法的实施例包括图案化前体结构以形成包括至少上部离散特征部分和具有更宽的宽度，长度或两者比较高离散特征部分的下部特征部分的阶梯式结构。 该方法使用沿着第一轴线例如x轴，然后沿着垂直于第一轴线或垂直于第一轴线的第二轴线，例如y轴定向的图案化动作。 因此，即使在低于约三十纳米的尺寸下，图案化动作也可允许在多个形成的相邻电池芯结构之间的更大的均匀性。 还公开了磁存储器结构和存储单元阵列。

    Multilayers having reduced perpendicular demagnetizing field using moment dilution for spintronic applications
    6.
    发明授权
    Multilayers having reduced perpendicular demagnetizing field using moment dilution for spintronic applications 有权
    具有减少的垂直退磁场的多层使用瞬时应用的时间稀释

    公开(公告)号：US09048411B2

    公开(公告)日：2015-06-02

    申请号：US14047130

    申请日：2013-10-07

    Applicant: Guenole Jan ,  Ru Ying Tong ,  Witold Kula

    Inventor： Guenole Jan ,  Ru Ying Tong ,  Witold Kula

    IPC: H01L29/82 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  G11C11/16

    CPC classification number: H01L43/02 ,  G11C11/161 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

    Abstract: A magnetic element is disclosed that has a composite free layer with a FM1/moment diluting/FM2 configuration wherein FM1 and FM2 are magnetic layers made of one or more of Co, Fe, Ni, and B and the moment diluting layer is used to reduce the perpendicular demagnetizing field. As a result, lower resistance x area product and higher thermal stability are realized when perpendicular surface anisotropy dominates shape anisotropy to give a magnetization perpendicular to the planes of the FM1, FM2 layers. The moment diluting layer may be a non-magnetic metal like Ta or a CoFe alloy with a doped non-magnetic metal. A perpendicular Hk enhancing layer interfaces with the FM2 layer and may be an oxide to increase the perpendicular anisotropy field in the FM2 layer. A method for forming the magnetic element is also provided.

    Abstract translation: 公开了具有FM1 /力矩稀释/ FM2配置的复合自由层的磁性元件，其中FM1和FM2是由Co，Fe，Ni和B中的一种或多种构成的磁性层，并且力矩稀释层用于减少 垂直退磁场。 结果，当垂直表面各向异性支配形状各向异性以产生垂直于FM1，FM2层的平面的磁化时，实现较低的电阻x面积乘积和较高的热稳定性。 瞬时稀释层可以是非磁性金属如Ta或具有掺杂的非磁性金属的CoFe合金。 垂直Hk增强层与FM2层接合，并且可以是氧化物以增加FM2层中的垂直各向异性场。 还提供了形成磁性元件的方法。

    MTJ element for STT MRAM
    7.
    发明授权
    MTJ element for STT MRAM 有权
    STT MRAM的MTJ元素

    公开(公告)号：US08900884B2

    公开(公告)日：2014-12-02

    申请号：US13525502

    申请日：2012-06-18

    Applicant: Witold Kula ,  Ru-Ying Tong ,  Guenole Jan ,  Yu-Jen Wang

    Inventor： Witold Kula ,  Ru-Ying Tong ,  Guenole Jan ,  Yu-Jen Wang

    IPC: H01L21/00 ,  H01L29/82

    CPC classification number: H01L43/10 ,  H01L43/08 ,  H01L43/12

    Abstract: An all (111) MTJ stack is disclosed in which there are no transitions between different crystalline orientations when going from layer to layer. This is accomplished by providing strongly (111)-textured layers immediately below the MgO tunnel barrier to induce a (111) orientation therein.

    Abstract translation: 公开了所有（111）MTJ堆叠，其中当从层到层不同时，不同结晶取向之间没有转变。 这通过在MgO隧道势垒正下方提供强（111） - 纹理层以在其中诱导（111）取向来实现。

    MTJ Element for STT MRAM
    8.
    发明申请
    MTJ Element for STT MRAM 有权
    STT MRAM的MTJ元素

    公开(公告)号：US20130334629A1

    公开(公告)日：2013-12-19

    申请号：US13525502

    申请日：2012-06-18

    Applicant: Witold Kula ,  Ru-Ying Tong ,  Guenole Jan ,  Yu-Jen Wang

    Inventor： Witold Kula ,  Ru-Ying Tong ,  Guenole Jan ,  Yu-Jen Wang

    IPC: H01L43/10 ,  H01L43/12

    CPC classification number: H01L43/10 ,  H01L43/08 ,  H01L43/12

    Abstract: An all (111) MTJ stack is disclosed in which there are no transitions between different crystalline orientations when going from layer to layer. This is accomplished by providing strongly (111)-textured layers immediately below the MgO tunnel barrier to induce a (111) orientation therein.

    Abstract translation: 公开了所有（111）MTJ堆叠，其中当从层到层不同时，不同结晶取向之间没有转变。 这通过在MgO隧道势垒正下方提供强（111） - 纹理层以在其中诱导（111）取向来实现。

    Free Layer with High Thermal Stability for Magnetic Device Applications by Insertion of a Boron Dusting Layer
    9.
    发明申请
    Free Layer with High Thermal Stability for Magnetic Device Applications by Insertion of a Boron Dusting Layer 有权
    通过插入硼粉尘层的磁性器件应用具有高热稳定性的自由层

    公开(公告)号：US20130270523A1

    公开(公告)日：2013-10-17

    申请号：US13448557

    申请日：2012-04-17

    Applicant: Yu-Jen Wang ,  Witold Kula ,  Ru-Ying Tong ,  Guenole Jan

    Inventor： Yu-Jen Wang ,  Witold Kula ,  Ru-Ying Tong ,  Guenole Jan

    IPC: H01L43/10 ,  H01L43/12

    CPC classification number: G01R33/091 ,  G11B5/3906 ,  H01F10/123 ,  H01F10/3286 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  Y10T428/1114 ,  Y10T428/1143

    Abstract: A boron or boron containing dusting layer such as CoB or FeB is formed along one or both of top and bottom surfaces of a free layer at interfaces with a tunnel barrier layer and capping layer to improve thermal stability while maintaining other magnetic properties of a MTJ stack. Each dusting layer has a thickness from 0.2 to 20 Angstroms and may be used as deposited, or at temperatures up to 400° C. or higher, or following a subsequent anneal at 400° C. or higher. The free layer may be a single layer of CoFe, Co, CoFeB or CoFeNiB, or may include a non-magnetic insertion layer. The resulting MTJ is suitable for STT-MRAM memory elements or spintronic devices. Perpendicular magnetic anisotropy is maintained in the free layer at temperatures up to 400° C. or higher. Ku enhancement is achieved and the retention time of a memory cell for STT-MRAM designs is increased.

    Abstract translation: 在具有隧道势垒层和封盖层的界面处，在自由层的顶表面和底表面中的一个或两个上形成含硼或含硼的除尘层，以改善热稳定性，同时保持MTJ堆叠的其它磁性能 。 每个除尘层的厚度为0.2至20埃，可用于沉积，或在高达400℃或更高的温度下使用，或随后在400℃或更高温度下退火。 自由层可以是CoFe，Co，CoFeB或CoFeNiB的单层，或者可以包括非磁性插入层。 所得MTJ适用于STT-MRAM存储器元件或自旋电子器件。 垂直磁各向异性在高达400℃或更高的温度下保持在自由层中。 实现了Ku增强，并且用于STT-MRAM设计的存储单元的保留时间增加。

    High Thermal Stability Reference Structure with Out-of-Plane Aniotropy for Magnetic Device Applications
    10.
    发明申请
    High Thermal Stability Reference Structure with Out-of-Plane Aniotropy for Magnetic Device Applications 有权
    用于磁性器件应用的具有非平面各向异性的高热稳定性参考结构

    公开(公告)号：US20130224521A1

    公开(公告)日：2013-08-29

    申请号：US13406972

    申请日：2012-02-28

    Applicant: Yu-Jen Wang ,  Witold Kula ,  Ru Ying Tong ,  Guenole Jan

    Inventor： Yu-Jen Wang ,  Witold Kula ,  Ru Ying Tong ,  Guenole Jan

    IPC: G11B5/66 ,  H01F41/22 ,  H01F41/14

    CPC classification number: H01L43/12 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/3909 ,  G11B5/3929 ,  G11B5/66 ,  G11B5/84 ,  G11C11/15 ,  G11C11/161 ,  H01F10/123 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/3295 ,  H01F41/305 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H03B15/006 ,  Y10T428/1107 ,  Y10T428/1121 ,  Y10T428/1143

    Abstract: Enhanced Hc and Hk in addition to higher thermal stability to 400° C. are achieved in magnetic devices by adding dusting layers on top and bottom surfaces of a spacer in a synthetic antiferromagnetic (SAF) structure to give a RL1/DL1/spacer/DL2/RL2 reference layer configuration where RL1 and RL2 layers exhibit perpendicular magnetic anisotropy (PMA), the spacer induces antiferromagnetic coupling between RL1 and RL2, and DL1 and DL2 are dusting layers that enhance PMA. RL1 and RL2 layers are selected from laminates such as (Ni/Co)n, L10 alloys, or rare earth-transition metal alloys. The reference layer may be incorporated in STT-MRAM memory elements or in spintronic devices including a spin transfer oscillator. Dusting layers and a similar SAF design may be employed in a free layer for Ku enhancement and to increase the retention time of a memory cell.

    Abstract translation: 通过在合成反铁磁（SAF）结构中在间隔物的顶表面和底表面上添加除尘层，得到RL1 / DL1 /间隔物/ DL2，在磁性器件中，除了通过在400℃下的更高的热稳定性之外，增强了Hc和Hk / RL2参考层配置，其中RL1和RL2层表现出垂直的磁各向异性（PMA），间隔物引起RL1和RL2之间的反铁磁耦合，DL1和DL2是增强PMA的除尘层。 RL1和RL2层选自诸如（Ni / Co）n，L10合金或稀土 - 过渡金属合金的层压体。 参考层可以并入STT-MRAM存储元件或包括自旋转移振荡器的自旋电子器件中。 可以在用于Ku增强的自由层中使用除尘层和类似的SAF设计，并增加存储器单元的保留时间。

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