公开(公告)号：US07985991B2

公开(公告)日：2011-07-26

申请号：US12046741

申请日：2008-03-12

申请人： Ryoichi Kajiwara ,  Masahiro Koizumi ,  Toshiaki Morita ,  Kazuya Takahashi ,  Munehisa Kishimoto ,  Shigeru Ishii ,  Toshinori Hirashima ,  Yasushi Takahashi ,  Toshiyuki Hata ,  Hiroshi Sato ,  Keiichi Ookawa

发明人： Ryoichi Kajiwara ,  Masahiro Koizumi ,  Toshiaki Morita ,  Kazuya Takahashi ,  Munehisa Kishimoto ,  Shigeru Ishii ,  Toshinori Hirashima ,  Yasushi Takahashi ,  Toshiyuki Hata ,  Hiroshi Sato ,  Keiichi Ookawa

IPC分类号： H01L29/94 ,  H01L21/00 ,  H01R9/00

CPC分类号： H01L23/49555 ,  H01L21/4814 ,  H01L21/56 ,  H01L21/561 ,  H01L21/565 ,  H01L23/28 ,  H01L23/3107 ,  H01L23/495 ,  H01L23/4952 ,  H01L23/49548 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/49582 ,  H01L24/11 ,  H01L24/13 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/81 ,  H01L24/83 ,  H01L24/84 ,  H01L24/97 ,  H01L29/7833 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/11 ,  H01L2224/1134 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/16245 ,  H01L2224/29011 ,  H01L2224/29015 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32245 ,  H01L2224/37011 ,  H01L2224/40095 ,  H01L2224/40225 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/73253 ,  H01L2224/75251 ,  H01L2224/81203 ,  H01L2224/81205 ,  H01L2224/81801 ,  H01L2224/83101 ,  H01L2224/83138 ,  H01L2224/83191 ,  H01L2224/83825 ,  H01L2224/8385 ,  H01L2224/83851 ,  H01L2224/84801 ,  H01L2224/97 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3011 ,  H05K3/3426 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2924/01049 ,  H01L2924/01083 ,  H01L2224/29139 ,  H01L2924/3512 ,  H01L2224/48 ,  H01L2924/00012

摘要： A semiconductor device features a semiconductor substrate with a MOSFET, an electrode for main current of the MOSFET disposed on a first major surface of the substrate, an electrode for control of the MOSFET disposed on the first major surface, a rear plane electrode of the MOSFET disposed on a second, opposing surface of the substrate, and an external connection terminal electrically connected to the rear plane electrode, the external electrode contains a first part, a second part and a third part, the first part is positioned over the rear plane electrode, the third part is positioned below the second major surface and the third part is connected via the second part to the first part.

摘要翻译： 半导体器件具有半导体衬底，其具有MOSFET，用于设置在衬底的第一主表面上的MOSFET的主电流的电极，用于控制设置在第一主表面上的MOSFET的电极，MOSFET的后平面电极 设置在所述基板的第二相对表面上，以及电连接到所述后平面电极的外部连接端子，所述外部电极包含第一部分，第二部分和第三部分，所述第一部分位于所述后平面电极 ，第三部分位于第二主表面下方，第三部分经由第二部分连接到第一部分。

公开(公告)号：US07763967B2

公开(公告)日：2010-07-27

申请号：US12155375

申请日：2008-06-03

申请人： Toshiyuki Hata ,  Takeshi Otani ,  Ichio Shimizu

发明人： Toshiyuki Hata ,  Takeshi Otani ,  Ichio Shimizu

IPC分类号： H01L21/461

CPC分类号： H01L24/33 ,  H01L23/49562 ,  H01L2224/1134 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/16245 ,  H01L2224/32245 ,  H01L2224/73253 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/181 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device has a sealing body formed of an insulating resin and a semiconductor chip positioned within the sealing body. A gate electrode and a source electrode are on a first main surface of the semiconductor chip and a back electrode (drain electrode) is on a second main surface thereof. An upper surface of a portion of a drain electrode plate that projects in a gull wing shape is exposed from the sealing body and a lower surface thereof is connected to the back electrode through an adhesive. A gate electrode plate projects in a gull wing shape on an opposite end side of the sealing body and is connected to the gate electrode within the sealing body. A source electrode plate projects in a gull wing shape on the opposite end side of the sealing body and is connected to the source electrode within the sealing body.

摘要翻译： 半导体器件具有由绝缘树脂和位于密封体内的半导体芯片形成的密封体。 栅电极和源电极位于半导体芯片的第一主表面上，背电极（漏电极）在其第二主表面上。 漏极电极板的以鸥翼形突出的部分的上表面从密封体露出，并且其下表面通过粘合剂连接到背电极。 栅电极板在密封体的相对端侧突出为鸥翼形，并且与密封体内的栅电极连接。 源电极板在密封体的相对端侧突出为鸥翼形，并且在密封体内与源电极连接。

公开(公告)号：US07408251B2

公开(公告)日：2008-08-05

申请号：US11312528

申请日：2005-12-21

申请人： Toshiyuki Hata ,  Hiroshi Sato

发明人： Toshiyuki Hata ,  Hiroshi Sato

IPC分类号： H01L23/02

CPC分类号： H01L24/83 ,  H01L23/49562 ,  H01L24/11 ,  H01L24/13 ,  H01L24/33 ,  H01L2224/0401 ,  H01L2224/0558 ,  H01L2224/05624 ,  H01L2224/11 ,  H01L2224/1134 ,  H01L2224/13 ,  H01L2224/13144 ,  H01L2224/16245 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/32245 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/83139 ,  H01L2224/8314 ,  H01L2224/83192 ,  H01L2224/838 ,  H01L2224/84138 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/0781 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/0105 ,  H01L2924/00014 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00012

摘要： A thin semiconductor device difficult to cause breakage of a semiconductor chip is disclosed. The semiconductor device comprises a sealing member, a semiconductor chip positioned within the sealing member, the semiconductor chip having a source electrode and a gate electrode on a first main surface thereof and a drain electrode on a second main surface as a back surface thereof, a first electrode plate (drain electrode plate) having an upper surface and a lower surface, a part of the upper surface of the first electrode plate being exposed to an upper surface of the sealing member and the lower surface portions of end portions of the first electrode plate being exposed to a lower surface of the sealing member, and second electrode plates (source electrode plate and gate electrode plate) each having a lower surface exposed to the lower surface of the sealing member and an upper surface positioned within the sealing member, wherein the drain electrode of the semiconductor chip is electrically connected to the drain electrode plate through an adhesive, one or plural stud type bump electrodes are formed by gold wire on the surface of each of the source electrode and gate electrode of the semiconductor chip, the bump electrode(s) being covered with an electrically conductive adhesive, the bump electrode(s) and the source and gate electrode plates are electrically connected with each other through the adhesive, and the bump electrode(s) and the source and gate electrode plates are not in contact with each other.

摘要翻译： 公开了一种难以引起半导体芯片破损的薄型半导体器件。 半导体器件包括密封构件，位于密封构件内的半导体芯片，半导体芯片在其第一主表面上具有源电极和栅电极，并且在作为其后表面的第二主表面上具有漏电极， 具有上表面和下表面的第一电极板（漏电极板），第一电极板的上表面的一部分暴露于密封构件的上表面，第一电极的端部的下表面部分 以及第二电极板（源极电极板和栅极电极板），其具有暴露于密封构件的下表面的下表面和位于密封构件内的上表面，其中， 半导体芯片的漏电极通过粘合剂，一个或多个螺柱型凸块电连接到漏电极板 电极由半导体芯片的源电极和栅电极的表面上的金线形成，凸块电极被导电粘合剂覆盖，凸起电极和源极和栅电极板 通过粘合剂彼此电连接，并且凸起电极和源极和栅电极板彼此不接触。

公开(公告)号：US07400002B2

公开(公告)日：2008-07-15

申请号：US11589847

申请日：2006-10-31

申请人： Ryoichi Kajiwara ,  Masahiro Koizumi ,  Toshiaki Morita ,  Kazuya Takahashi ,  Munehisa Kishimoto ,  Shigeru Ishii ,  Toshinori Hirashima ,  Yasushi Takahashi ,  Toshiyuki Hata ,  Hiroshi Sato ,  Keiichi Ookawa

发明人： Ryoichi Kajiwara ,  Masahiro Koizumi ,  Toshiaki Morita ,  Kazuya Takahashi ,  Munehisa Kishimoto ,  Shigeru Ishii ,  Toshinori Hirashima ,  Yasushi Takahashi ,  Toshiyuki Hata ,  Hiroshi Sato ,  Keiichi Ookawa

IPC分类号： H01L29/94 ,  H01L21/00 ,  H01R9/00

CPC分类号： H01L23/49555 ,  H01L21/4814 ,  H01L21/56 ,  H01L21/561 ,  H01L21/565 ,  H01L23/28 ,  H01L23/3107 ,  H01L23/495 ,  H01L23/4952 ,  H01L23/49548 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/49582 ,  H01L24/11 ,  H01L24/13 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/81 ,  H01L24/83 ,  H01L24/84 ,  H01L24/97 ,  H01L29/7833 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/11 ,  H01L2224/1134 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/16245 ,  H01L2224/29011 ,  H01L2224/29015 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32245 ,  H01L2224/37011 ,  H01L2224/40095 ,  H01L2224/40225 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/73253 ,  H01L2224/75251 ,  H01L2224/81203 ,  H01L2224/81205 ,  H01L2224/81801 ,  H01L2224/83101 ,  H01L2224/83138 ,  H01L2224/83191 ,  H01L2224/83825 ,  H01L2224/8385 ,  H01L2224/83851 ,  H01L2224/84801 ,  H01L2224/97 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3011 ,  H05K3/3426 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2924/01049 ,  H01L2924/01083 ,  H01L2224/29139 ,  H01L2924/3512 ,  H01L2224/48 ,  H01L2924/00012

摘要： A semiconductor device, wherein a first metallic member is bonded to a first electrode of a semiconductor element via a first metallic body containing a first precious metal, and a second metallic member is bonded to a second electrode via a second metallic body containing a second precious metal.

公开(公告)号：US07342307B2

公开(公告)日：2008-03-11

申请号：US11649253

申请日：2007-01-04

申请人： Toshiyuki Hata ,  Takamitsu Kanazawa ,  Takeshi Otani

发明人： Toshiyuki Hata ,  Takamitsu Kanazawa ,  Takeshi Otani

IPC分类号： H01L23/34 ,  H01L23/495 ,  H01L29/80 ,  H01L31/0328

CPC分类号： H01L24/06 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05647 ,  H01L2224/0603 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48095 ,  H01L2224/48247 ,  H01L2224/48647 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device includes: a package; two semiconductor chip fixing parts located adjacently to each other in the package; and first and the second semiconductor chips, each of which is fixed on the semiconductor chip fixing part and has a field effect transistor formed therein. A gate lead G1, a source lead S1, and a drain lead D2 are arranged from left to right on the first surface of the package and a drain lead D1, a source lead S2, and a gate lead G2 are arranged from left to right on the second surface. A gap between the source lead S1 and the drain lead D2 is two times a gap between the gate lead G1 and the source lead S1, and a gap between the drain lead D1 and the source lead S2 is two times a gap between the source lead S2 and the gate lead G2.

摘要翻译： 半导体器件包括：封装; 在封装中彼此相邻的两个半导体芯片固定部件; 以及第一和第二半导体芯片，每个半导体芯片固定在半导体芯片固定部分上，并且其中形成有场效应晶体管。 栅极引线G 1，源极引线S1和漏极引线D 2从封装的第一表面上从左到右布置，漏极引线D1，源极引线S2和栅极引线G2 在第二表面上从左到右排列。 源极引线S1和漏极引线D2之间的间隙是栅极引线G 1和源极引线S 1之间的间隙的两倍，并且漏极引线D 1与源极引线S 2之间的间隙是两倍 源极引线S2和栅极引线G 2之间的间隙。

公开(公告)号：US20070040248A1

公开(公告)日：2007-02-22

申请号：US11589847

申请日：2006-10-31

申请人： Ryoichi Kajiwara ,  Masahiro Koizumi ,  Toshiaki Morita ,  Kazuya Takahashi ,  Munehisa Kishimoto ,  Shigeru Ishii ,  Toshinori Hirashima ,  Yasushi Takahashi ,  Toshiyuki Hata ,  Hiroshi Sato ,  Keiichi Ookawa

发明人： Ryoichi Kajiwara ,  Masahiro Koizumi ,  Toshiaki Morita ,  Kazuya Takahashi ,  Munehisa Kishimoto ,  Shigeru Ishii ,  Toshinori Hirashima ,  Yasushi Takahashi ,  Toshiyuki Hata ,  Hiroshi Sato ,  Keiichi Ookawa

IPC分类号： H01L23/495

CPC分类号： H01L23/49555 ,  H01L21/4814 ,  H01L21/56 ,  H01L21/561 ,  H01L21/565 ,  H01L23/28 ,  H01L23/3107 ,  H01L23/495 ,  H01L23/4952 ,  H01L23/49548 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/49582 ,  H01L24/11 ,  H01L24/13 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/81 ,  H01L24/83 ,  H01L24/84 ,  H01L24/97 ,  H01L29/7833 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/11 ,  H01L2224/1134 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/16245 ,  H01L2224/29011 ,  H01L2224/29015 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32245 ,  H01L2224/37011 ,  H01L2224/40095 ,  H01L2224/40225 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/73253 ,  H01L2224/75251 ,  H01L2224/81203 ,  H01L2224/81205 ,  H01L2224/81801 ,  H01L2224/83101 ,  H01L2224/83138 ,  H01L2224/83191 ,  H01L2224/83825 ,  H01L2224/8385 ,  H01L2224/83851 ,  H01L2224/84801 ,  H01L2224/97 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3011 ,  H05K3/3426 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2924/01049 ,  H01L2924/01083 ,  H01L2224/29139 ,  H01L2924/3512 ,  H01L2224/48 ,  H01L2924/00012

摘要： A semiconductor device, wherein a first metallic member is bonded to a first electrode of a semiconductor element via a first metallic body containing a first precious metal, and a second metallic member is bonded to a second electrode via a second metallic body containing a second precious metal.

公开(公告)号：US20060197196A1

公开(公告)日：2006-09-07

申请号：US11415290

申请日：2006-05-02

申请人： Ryoichi Kajiwara ,  Masahiro Koizumi ,  Toshiaki Morita ,  Kazuya Takahashi ,  Munehisa Kishimoto ,  Shigeru Ishii ,  Toshinori Hirashima ,  Yasushi Takahashi ,  Toshiyuki Hata ,  Hiroshi Sato ,  Keiichi Ookawa

发明人： Ryoichi Kajiwara ,  Masahiro Koizumi ,  Toshiaki Morita ,  Kazuya Takahashi ,  Munehisa Kishimoto ,  Shigeru Ishii ,  Toshinori Hirashima ,  Yasushi Takahashi ,  Toshiyuki Hata ,  Hiroshi Sato ,  Keiichi Ookawa

IPC分类号： H01L23/495

CPC分类号： H01L23/49555 ,  H01L21/4814 ,  H01L21/56 ,  H01L21/561 ,  H01L21/565 ,  H01L23/28 ,  H01L23/3107 ,  H01L23/495 ,  H01L23/4952 ,  H01L23/49548 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/49582 ,  H01L24/11 ,  H01L24/13 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/81 ,  H01L24/83 ,  H01L24/84 ,  H01L24/97 ,  H01L29/7833 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/11 ,  H01L2224/1134 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/16245 ,  H01L2224/29011 ,  H01L2224/29015 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32245 ,  H01L2224/37011 ,  H01L2224/40095 ,  H01L2224/40225 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/73253 ,  H01L2224/75251 ,  H01L2224/81203 ,  H01L2224/81205 ,  H01L2224/81801 ,  H01L2224/83101 ,  H01L2224/83138 ,  H01L2224/83191 ,  H01L2224/83825 ,  H01L2224/8385 ,  H01L2224/83851 ,  H01L2224/84801 ,  H01L2224/97 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3011 ,  H05K3/3426 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2924/01049 ,  H01L2924/01083 ,  H01L2224/29139 ,  H01L2924/3512 ,  H01L2224/48 ,  H01L2924/00012

摘要： A semiconductor device, wherein a first metallic member is bonded to a first electrode of a semiconductor element via a first metallic body containing a first precious metal, and a second metallic member is bonded to a second electrode via a second metallic body containing a second precious metal.

公开(公告)号：US06768632B2

公开(公告)日：2004-07-27

申请号：US10648278

申请日：2003-08-27

申请人： Toshiyuki Hata ,  Yoshinori Oe ,  Nario Niibo ,  Makoto Uemura ,  Tsuyoshi Yoshino

发明人： Toshiyuki Hata ,  Yoshinori Oe ,  Nario Niibo ,  Makoto Uemura ,  Tsuyoshi Yoshino

IPC分类号： H01G900

CPC分类号： H01G9/06 ,  H01G9/008 ,  H01G9/08

摘要： The present invention aims to address a problem of contact failure likely to occur in the joint between an internal lead and an external terminal and to provide a reliable aluminum electrolytic capacitor. To this end, an aluminum electrolytic capacitor of the present invention is structured so that a through-hole provided through an internal lead has a diameter smaller than the outer diameter of an aluminum rivet and the peripheral edge of this through-hole is drawn to provide a cylindrical portion integral with the through-hole.

摘要翻译： 本发明旨在解决可能在内部引线和外部端子之间的接头中发生接触故障并提供可靠的铝电解电容器的问题。 为此，本发明的铝电解电容器被构造成使得通过内部引线设置的通孔的直径小于铝铆钉的外径，并且该通孔的周缘被拉伸以提供 与通孔成一体的圆筒部。

公开(公告)号：US06492739B2

公开(公告)日：2002-12-10

申请号：US10103988

申请日：2002-03-25

申请人： Kuniharu Muto ,  Atsushi Nishikizawa ,  Jyunichi Tsuchiya ,  Toshiyuki Hata ,  Nobuya Koike ,  Ichio Shimizu

发明人： Kuniharu Muto ,  Atsushi Nishikizawa ,  Jyunichi Tsuchiya ,  Toshiyuki Hata ,  Nobuya Koike ,  Ichio Shimizu

IPC分类号： H01L23495

CPC分类号： H01L23/4334 ,  H01L21/565 ,  H01L23/49541 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L2224/05554 ,  H01L2224/05639 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099

摘要： A QFP adapted to lowering the heat resistance and increasing the number of pins, and a method of producing the same. The QFP includes a heat-radiating metal plate having bumpers formed at the four corners thereof as a unitary structure, a semiconductor chip mounted on the heat-radiating metal plate, leads provided on the heat-radiating metal plate and surrounding the peripheries of the semiconductor chip, bonding wires for connecting the leads to the semiconductor chip, and a sealing resin member for sealing part of the semiconductor chip, inner leads of the leads, bonding wires and part of the heat-radiating metal plate. The tips of the bumpers integrally formed with the heat-radiating metal plate are positioned outside the tips of the outer leads that are protruding from the sealing resin member. In the QFP producing method, the heat-radiating metal plate having the bumpers and the lead frame having the leads are secured outside the sealing resin member.

摘要翻译： 适用于降低耐热性和增加引脚数量的QFP及其制造方法。 QFP包括散热金属板，其散热金属板在其四个角处形成为整体结构的缓冲器，安装在散热金属板上的半导体芯片，设置在散热金属板上并围绕半导体周边的引线 芯片，用于将引线连接到半导体芯片的接合线，以及用于密封半导体芯片的一部分的密封树脂构件，引线的内引线，接合线和散热金属板的一部分。 与散热金属板一体形成的保险杠的前端位于从密封树脂构件突出的外引线的顶部的外侧。 在QFP制造方法中，具有保险杠的散热金属板和具有引线的引线框固定在密封树脂部件的外部。

公开(公告)号：US06392308B2

公开(公告)日：2002-05-21

申请号：US09794040

申请日：2001-02-28

申请人： Kuniharu Muto ,  Atsushi Nishikizawa ,  Jyunichi Tsuchiya ,  Toshiyuki Hata ,  Nobuya Koike ,  Ichio Shimizu

发明人： Kuniharu Muto ,  Atsushi Nishikizawa ,  Jyunichi Tsuchiya ,  Toshiyuki Hata ,  Nobuya Koike ,  Ichio Shimizu

IPC分类号： H01L23495

CPC分类号： H01L23/4334 ,  H01L21/565 ,  H01L23/49541 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L2224/05554 ,  H01L2224/05639 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099

摘要： A QFP adapted to lowering the heat resistance and increasing the number of pins, and a method of producing the same. The QFP includes a heat-radiating metal plate having bumpers formed at the four corners thereof as a unitary structure, a semiconductor chip mounted on the heat-radiating metal plate, leads provided on the heat-radiating metal plate and surrounding the peripheries of the semiconductor chip, bonding wires for connecting the leads to the semiconductor chip, and a sealing resin member for sealing part of the semiconductor chip, inner leads of the leads, bonding wires and part of the heat-radiating metal plate. The tips of the bumpers integrally formed with the heat-radiating metal plate are positioned outside the tips of the outer leads that are protruding from the sealing resin member. In the QFP producing method, the heat-radiating metal plate having the bumpers and the lead frame having the leads are secured outside the sealing resin member.