发明授权
- 专利标题： MOSFET package
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申请号： US11589847申请日： 2006-10-31
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公开(公告)号： US07400002B2公开(公告)日： 2008-07-15
- 发明人: Ryoichi Kajiwara , Masahiro Koizumi , Toshiaki Morita , Kazuya Takahashi , Munehisa Kishimoto , Shigeru Ishii , Toshinori Hirashima , Yasushi Takahashi , Toshiyuki Hata , Hiroshi Sato , Keiichi Ookawa
- 申请人： Ryoichi Kajiwara , Masahiro Koizumi , Toshiaki Morita , Kazuya Takahashi , Munehisa Kishimoto , Shigeru Ishii , Toshinori Hirashima , Yasushi Takahashi , Toshiyuki Hata , Hiroshi Sato , Keiichi Ookawa
- 申请人地址： JP Tokyo JP Takasaki-Shi
- 专利权人： Renesas Technology Corp.,Hitachi Tohbu Semiconductor, Ltd.
- 当前专利权人： Renesas Technology Corp.,Hitachi Tohbu Semiconductor, Ltd.
- 当前专利权人地址： JP Tokyo JP Takasaki-Shi
- 代理机构： Antonelli, Terry, Stout & Kraus, LLP.
- 优先权： JP11-19431 19990128; JP11-160539 19990608
- 主分类号： H01L29/94
- IPC分类号： H01L29/94 ; H01L21/00 ; H01R9/00
摘要：
A semiconductor device, wherein a first metallic member is bonded to a first electrode of a semiconductor element via a first metallic body containing a first precious metal, and a second metallic member is bonded to a second electrode via a second metallic body containing a second precious metal.
公开/授权文献
- US20070040248A1 Semiconductor device 公开/授权日：2007-02-22
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