Abstract:
A spherical aberration corrector is offered which permits a correction of deviation of the circularity of at least one of an image and a diffraction pattern and a correction of on-axis aberrations to be carried out independently. The spherical aberration corrector (100) is for use with a charged particle beam instrument (1) for obtaining the image and the diffraction pattern and has a hexapole field generating portion (110) for producing plural stages of hexapole fields, an octopole field superimposing portion (120) for superimposing an octopole on at least one of the plural stages of hexapole fields to correct deviation of the circularity of at least one of the image and diffraction pattern, and a deflection portion (130) for deflecting a charged particle beam.
Abstract:
The present invention provides a charged particle optical system which emits a charged particle beam, the system including an electrostatic lens, and a grid electrode opposed to the electrostatic lens along an optical axis of the electrostatic lens, and configured to form an electrostatic field in cooperation with the electrostatic lens, wherein the grid electrode is configured such that an electrode surface, opposed to the electrostatic lens, of the grid electrode has a distance, from the electrostatic lens in a direction of the optical axis, which varies with a position in the electrode surface.
Abstract:
The charged-particle beam system includes a non-axisymmetric diode forms a non-axisymmetric beam having an elliptic cross-section. A focusing element utilizes a magnetic field for focusing and transporting the non-axisymmetric beam, wherein the non-axisymmetric beam is approximately matched with the channel of the focusing element.
Abstract:
The charged-particle beam system includes a non-axisymmetric diode forms a non-axisymmetric beam having an elliptic cross-section. A focusing element utilizes a magnetic field for focusing and transporting the non-axisymmetric beam, wherein the non-axisymmetric beam is approximately matched with the channel of the focusing element.
Abstract:
Provided is a charged-particle-beam device capable of simultaneously cancelling out a plurality of aberrations caused by non-uniform distribution of the opening angle and energy of a charged particle beam. The charged-particle-beam device is provided with an aberration generation lens for generating an aberration due to the charged particle beam passing off-axis, and a corrective lens for causing the trajectory of the charged particle beam to converge on the main surface of an objective lens irrespective of the energy of the charged particle beam. The main surface of the corrective lens is disposed at a crossover position at which a plurality of charged particle beams having differing opening angles converge after passing through the aberration generation lens.
Abstract:
An ultra-miniaturized electron optical microcolumn is provided. The electron optical microcolumn includes an electron-emitting source emitting electrons using a field emission principle, an extraction electrode causing the emission of electrons from the electron-emitting source, a focusing electrode to which voltage is flexibly applied in response to a working distance to a target for regulating a focusing force of electron beams emitted from the electron-emitting source, an acceleration electrode accelerating electrons emitted by the extraction electrode, a limit electrode regulating an amount and a size of electron beams using electrons accelerated by the acceleration electrode, and a deflector deflecting electron beams towards the target.
Abstract:
The present invention provides a charged particle optical system which emits a charged particle beam, the system including an electrostatic lens, and a grid electrode opposed to the electrostatic lens along an optical axis of the electrostatic lens, and configured to form an electrostatic field in cooperation with the electrostatic lens, wherein the grid electrode is configured such that an electrode surface, opposed to the electrostatic lens, of the grid electrode has a distance, from the electrostatic lens in a direction of the optical axis, which varies with a position in the electrode surface.
Abstract:
A shaping offset adjustment method, comprising: checking a reference point formed by an overlap of first and second shaping apertures included in a charged particle beam drawing apparatus; changing a position of the first shaping aperture by deflecting a charged particle beam so that an overlap area of the first and second shaping apertures has a predetermined shot size; measuring a current value of the charged particle beam passing through the overlap area; performing fitting on a relationship between the shot size and the corresponding current value using a cubic polynomial to calculate coefficients of the cubic polynomial achieving best fit; and correcting a shaping offset amount using the calculated coefficients of the cubic polynomial.
Abstract:
A method for projecting an electron beam, used notably in direct or indirect writing lithography and in electronic microscopy. Proximity effects created by the forward and backward scattering of the electrons of the beam in interaction with the target must be corrected. For this, the convolution of a point spread function with the geometry of the target is conventionally used. At least one of the components of the point spread function has its maximum value not located on the center of the beam. Preferably, the maximum value is instead located on the backward scattering peak. Advantageously, the point spread function uses gamma distribution laws.