MULTI-BEAM WRITING METHOD AND MULTI-BEAM WRITING APPARATUS

    公开(公告)号:US20250118529A1

    公开(公告)日:2025-04-10

    申请号:US18890971

    申请日:2024-09-20

    Abstract: In one embodiment, a multi-beam writing method is for dividing a writing region of a substrate into multiple stripe regions, and writing each stripe region with a predetermined within-stripe multiplicity of N, where N is an integer greater than 1. The multi-beam writing method includes generating M different types of segments that define a shot order for multiple pixels belonging to each of multiple cells into which the stripe region is divided, the M being an integer greater than 1, irradiating the multiple pixels in the cell with a first individual beam using (m−1)th segment, where m is an integer such that 2≤m≤M, then irradiating the multiple pixels in the cell with a second individual beam different from the first individual beam using mth segment, and writing all pixels in each cell with the multiplicity of N by repeating irradiation sequentially using the M types of segments.

    CONTROL METHOD OF WRITING APPARATUS AND WRITING APPARATUS

    公开(公告)号:US20230111566A1

    公开(公告)日:2023-04-13

    申请号:US17962825

    申请日:2022-10-10

    Abstract: A writing apparatus of the embodiments of the present invention is a writing apparatus that irradiates a predetermined position on an irradiation target with multiple charged particle beams to write a predetermined pattern on the irradiation target, the apparatus comprising: a beam generation mechanism configured to generate multiple charged particle beams; a blanking aperture mechanism configured to perform blanking control of the generated multiple charged particle beams; a stage configured to have the irradiation target mounted thereon and to be movable; and a controller configured to control the writing apparatus, wherein the controller controls the blanking aperture mechanism and the stage to move the stage in an in-plane direction of a surface of the irradiation target during a blanking period in preparatory phase for writing.

    ELECTRON BEAM WRITING APPARATUS AND ELECTRON BEAM WRITING METHOD
    4.
    发明申请
    ELECTRON BEAM WRITING APPARATUS AND ELECTRON BEAM WRITING METHOD 有权
    电子束写入装置和电子束写入方法

    公开(公告)号:US20130216953A1

    公开(公告)日:2013-08-22

    申请号:US13768258

    申请日:2013-02-15

    Abstract: An electron beam writing apparatus comprising a stage that a sample is placed on, an electron optical column, an electron gun emitting an electron beam disposed in the optical column, an electrostatic lens provided with electrodes aligned in an axial direction of the electron beam disposed in the optical column, and a voltage supply device for applying positive voltage constantly to the electrostatic lens. A shield plate is disposed between the XY stage and the electron optical column to block reflected electrons or secondary electrons generated by irradiation to the sample with the electron beam. The electrostatic lens is disposed immediately above the shield plate to change a focal position of the electron beam. A voltage supply device applies a positive voltage constantly to the electrostatic lens.

    Abstract translation: 一种电子束写入装置,包括放置样品的电极,电子光学柱,发射设置在光学柱中的电子束的电子枪,设置有沿着电子束的轴向排列的电极的静电透镜, 光学柱,以及用于向静电透镜恒定施加正电压的电压供给装置。 屏蔽板设置在XY平台和电子光学柱之间以阻挡通过用电子束照射到样品产生的反射电子或二次电子。 静电透镜设置在屏蔽板的正上方,以改变电子束的焦点位置。 电压供给装置将静电透镜恒定地施加正电压。

    CHARGED PARTICLE BEAM WRITING APPARATUS AND CHARGED PARTICLE BEAM WRITING METHOD

    公开(公告)号:US20200258715A1

    公开(公告)日:2020-08-13

    申请号:US16782156

    申请日:2020-02-05

    Abstract: A charged particle beam writing apparatus includes a writer writing a pattern on a surface of a substrate using a charged particle beam, a measurement unit measuring a height of the surface of a central portion of the substrate at a plurality of positions in the central portion, a generator performing fitting using a first polynomial on measurement values from the measurement unit, calculating, by extrapolation using the first polynomial, a first height distribution of the height of the surface of a peripheral portion of the substrate, performing fitting using a second polynomial, which is of a higher order than the first polynomial, on the measurement values, calculating a second height distribution of the height of the surface of the central portion by interpolation using the second polynomial, and generating a height distribution of the substrate by combining the first height distribution and the second height distribution, and a controller adjusting a focal position of the charged particle beam based on the height of the surface at a writing position, the height being calculated from the height distribution of the substrate.

    CONTROL METHOD OF WRITING APPARATUS AND WRITING APPARATUS

    公开(公告)号:US20240297010A1

    公开(公告)日:2024-09-05

    申请号:US18659093

    申请日:2024-05-09

    Abstract: A writing apparatus irradiates a predetermined position on an irradiation target with multiple charged particle beams to write a predetermined pattern on the irradiation target. The writing apparatus includes a beam generation mechanism generating multiple charged particle beams; a blanking aperture mechanism comprising a limiting aperture substrate shielding the generated multiple charged particle beams and a deflector deflecting the multiple charged particle beams in a predetermined direction, and blanking the multiple charged particle beams; a stage having the irradiation target mounted thereon and being movable; a driver moving the limiting aperture substrate; and a controller controlling the writing apparatus. The controller moves the limiting aperture substrate from an arrangement location at the time of writing in a plane perpendicular to an axial direction of the multiple charged particle beams in a blanking period, and returns the limiting aperture substrate to the arrangement location at the time of writing.

    CHARGED PARTICLE BEAM WRITING METHOD AND CHARGED PARTICLE BEAM WRITING APPARATUS

    公开(公告)号:US20230102923A1

    公开(公告)日:2023-03-30

    申请号:US18053135

    申请日:2022-11-07

    Abstract: The purpose of the present invention is to correct a beam irradiation position shift caused by charging phenomena with high accuracy. A charged particle beam writing method includes virtually dividing a writing region of the substrate so as to have a predetermined mesh size and calculating a pattern density distribution representing an arrangement ratio of the pattern for each mesh region, calculating a dose distribution using the pattern density distribution, calculating an irradiation amount distribution using the pattern density distribution and the dose distribution, calculating a fogging charged particle amount distribution, calculating a charge amount distribution due to direct charge and a charge amount distribution due to fogging charge, calculating a position shift of a writing position based on the charge amount distribution due to direct charge and the charge amount distribution due to fogging charge, correcting an irradiation position using the position shift, and irradiating the corrected irradiation position with the charged particle beam with which a potential of a surface of the substrate becomes higher than a potential of a bottom surface of ae potential regulation member.

    MULTI-CHARGED-PARTICLE-BEAM WRITING METHOD, MULTI-CHARGED-PARTICLE-BEAM WRITING APPARATUS, AND COMPUTER-READABLE RECORDING MEDIUM

    公开(公告)号:US20230078311A1

    公开(公告)日:2023-03-16

    申请号:US17885774

    申请日:2022-08-11

    Abstract: In one embodiment, a multi-charged-particle-beam writing method includes dividing a data path into a plurality of first blocks based on at least either one of each of a plurality of input/output circuits and a plurality of wiring groups, and calculating a first shift amount for multiple beams for each of the plurality of first blocks. The data path is for inputting control data to a cell array on a blanking aperture array substrate. The control data is for controlling ON/OFF of each beam of the multiple beams. Each of the plurality of wiring groups includes a plurality of pieces of wiring connected to the plurality of input/output circuits and grouped together based on inter-wiring distance. The first shift amount is due to at least one of an electric field and a magnetic field for each of the plurality of first blocks. An irradiation position or a dose of the multiple beams is corrected based on the first shift amount, and irradiation is performed.

    CHARGED PARTICLE BEAM WRITING METHOD AND CHARGED PARTICLE BEAM WRITING APPARATUS

    公开(公告)号:US20190237297A1

    公开(公告)日:2019-08-01

    申请号:US16260445

    申请日:2019-01-29

    Abstract: A charged particle beam writing method includes acquiring the deviation amount of the deflection position per unit tracking deflection amount with respect to each tracking coefficient of a plurality of tracking coefficients having been set for adjusting the tracking amount to shift the deflection position of a charged particle beam on the writing target substrate in order to follow movement of the stage on which the writing target substrate is placed, extracting a tracking coefficient based on which the deviation amount of the deflection position per the unit tracking deflection amount is closest to zero among the plurality of tracking coefficients, and writing a pattern on the writing target substrate with the charged particle beam while performing tracking control in which the tracking amount has been adjusted using the tracking coefficient extracted.

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