摘要:
When an emission current is changed, a decrease in brightness of an electron beam is prevented. An electron gun includes a cathode that emits thermoelectrons, a Wehnelt electrode that focuses the thermoelectrons, a control electrode that extracts the thermoelectrons from a distal end of said cathode, an anode that accelerates the thermoelectrons and irradiates a powder with the thermoelectrons as an electron beam, and an optimum condition collection controller that changes at least one of a bias voltage to be applied to the Wehnelt electrode and a control electrode voltage to be applied to the control electrode, and decides a combination of the bias voltage and the control electrode voltage at which the brightness of the electron beam reaches a peak.
摘要:
A spherical aberration corrector is offered which permits a correction of deviation of the circularity of at least one of an image and a diffraction pattern and a correction of on-axis aberrations to be carried out independently. The spherical aberration corrector (100) is for use with a charged particle beam instrument (1) for obtaining the image and the diffraction pattern and has a hexapole field generating portion (110) for producing plural stages of hexapole fields, an octopole field superimposing portion (120) for superimposing an octopole on at least one of the plural stages of hexapole fields to correct deviation of the circularity of at least one of the image and diffraction pattern, and a deflection portion (130) for deflecting a charged particle beam.
摘要:
The astigmatism control processing time is decreased to 1 second or less by improving the astigmatic difference measurement accuracy. A charged particle beam device includes: a stage on which a sample is loaded; a transport mechanism which carries the sample onto the stage; a charged particle beam optical system which irradiates the sample on the stage with a charged particle beam and detects secondary charged particles generated from the sample; and a controller which determines setup parameters for the charged particle beam optical system and controls the charged particle beam optical system. The controller registers and holds electro-optical system setup parameters for irradiation with a beam tilted from a normal line on the sample as the charged particle beam, compares observation images obtained by the tilted beam, measures the amount and direction of movement and calculates the amount of astigmatism correction from the amount of movement and the direction.
摘要:
Contamination may be removed from an emitter tip of a field emitter during operation of the emitter tip in a system having an electron beam column having an electrode with a beam defining aperture, an electron collector located proximate to the beam defining aperture between the electrode and the field emitter, and an electron deflector located between the emitter tip and the electron collector. At regular predetermined intervals an electron beam from the emitter tip may be deflected away from a path through the beam defining aperture and onto the electron collector. An electron beam current to the electron collector may be determined and the emitter tip may be flash heated if the current to the electron collector is below a threshold.
摘要:
A technique for compensating for chromatic aberration in particle beams, caused by differing particle energy levels when a beam is deflected for beam steering or beam focusing. A compensating deflection is applied to the beam upstream of its intended point of deflection. When the particles reach the point of deflection, the effect of the compensating deflection is proportional to the energy level of each particle, and compensates for the aberration that would normally occur. The point at which the compensating deflection is applied is selected to be one-fourth of a cycle in longitudinal phase space and an integral number of half-cycles in transverse phase space. With this critical spacing, the compensating deflection at the point of its application is proportional to relative phase in longitudinal phase space, but is proportional to energy level at the intended point of deflection.
摘要:
A technique for correcting spherical and other aberrations in a particle beam. Spherical aberration is caused by variations in beam behavior dependent on the cube of the radius or radial position with respect to the beam axis. To correct for such aberration, the beam is passed through multiple compensation electric field arrays, each of which has multiple rows of parallel wires stretched transversely across the beam path, the rows being biased with separate voltages to provide an electric field that varies in proportion to the cube of the distance from the central row of the array. The multiple arrays provide a cylindrically symmetrical electric field, and are oriented at a uniform angular spacing, which, for spherical aberration, is 120 degrees.
摘要:
Dot pattern data stored in the first dot pattern memory is read out by a predetermined number of successive bits at a time under the control of a microprocessor and corrected with respect to an X direction. The corrected dot pattern data is temporarily stored in a main memory. The dot pattern data stored in the main memory is then corrected with respect to a Y direction. The resultant corrected dot pattern data is stored in a second dot pattern memory for use for electron beam blanking control.
摘要:
An objective lens for use in probe-forming particle-optical columns such as focused ion beam equipment, scanning electron microscopes, and helium microscopes is described. It comprises two interleaved (quadrupole/octopole) lenses and two or three ancillary octopole lenses, and is capable of simultaneous compensation of spherical (Cs) and chromatic (Cc) aberrations of the objective lens alone or of the complete particle-optical column. Additional apparatus comprising a gridded aperture and position-sensitive detector is specified, together with a method to measure and minimize all of the five independent third-order aberration coefficients of the objective lens.
摘要:
A method for projecting an electron beam, used notably in direct or indirect writing lithography and in electronic microscopy. Proximity effects created by the forward and backward scattering of the electrons of the beam in interaction with the target must be corrected. For this, the convolution of a point spread function with the geometry of the target is conventionally used. At least one of the components of the point spread function has its maximum value not located on the center of the beam. Preferably, the maximum value is instead located on the backward scattering peak. Advantageously, the point spread function uses gamma distribution laws.