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    LAYOUT PATTERN FOR MAGNETORESISTIVE RANDOM ACCESS MEMORY
    24.
    发明公开
    LAYOUT PATTERN FOR MAGNETORESISTIVE RANDOM ACCESS MEMORY 审中-公开

    公开(公告)号：US20240130141A1

    公开(公告)日：2024-04-18

    申请号：US18395649

    申请日：2023-12-25

    Applicant: United Microelectronics Corp.

    Inventor： Ya-Huei Tsai ,  Rai-Min Huang ,  Yu-Ping Wang ,  Hung-Yueh Chen

    IPC: H10B61/00 ,  H01L23/528 ,  H10N50/80

    CPC classification number: H10B61/22 ,  H01L23/528 ,  H10N50/80 ,  G11C11/161

    Abstract: A layout pattern for magnetoresistive random access memory (MRAM) includes a substrate having a first active region, a second active region, and a word line connecting region between the first active region and the second active region, a first gate pattern extending along a first direction from the first active region to the second active region, a second gate pattern extending along the first direction from the first active region to the second active region, a first magnetic tunneling junction (MTJ) between the first gate pattern and the second pattern and within the word line connecting region, and a second MTJ between the first gate pattern and the second gate pattern in the first active region. Preferably, top surfaces of the first MTJ and the second MTJ are coplanar.

    Layout pattern for magnetoresistive random access memory
    26.
    发明授权
    Layout pattern for magnetoresistive random access memory 有权

    公开(公告)号：US11374055B2

    公开(公告)日：2022-06-28

    申请号：US16792271

    申请日：2020-02-16

    Applicant: UNITED MICROELECTRONICS CORP.

    Inventor： Ya-Huei Tsai ,  Rai-Min Huang ,  Yu-Ping Wang ,  Hung-Yueh Chen

    IPC: H01L27/22 ,  H01L23/528 ,  H01L43/02 ,  G11C11/16 ,  H01F10/32 ,  H01L43/10

    Abstract: A layout pattern for magnetoresistive random access memory (MRAM) includes a substrate having a first active region, a second active region, and a word line connecting region between the first active region and the second active region and a gate pattern extending from the first active region to the second active region, in which the gate pattern includes a H-shape according to a top view. Preferably, the gate pattern includes a first gate pattern extending along a first direction from the first active region to the second active region, a second gate pattern extending along the first direction from the first active region to the second active region, and a third gate pattern connecting the first gate pattern and the second gate pattern along a second direction.

    MAGNETIC MEMORY CELL
    28.
    发明申请
    MAGNETIC MEMORY CELL 有权

    公开(公告)号：US20210020694A1

    公开(公告)日：2021-01-21

    申请号：US16812354

    申请日：2020-03-08

    Applicant: UNITED MICROELECTRONICS CORP.

    Inventor： Rai-Min Huang ,  Hung-Yueh Chen ,  Ya-Huei Tsai ,  Yu-Ping Wang

    IPC: H01L27/22 ,  H01L23/532 ,  G11C11/16 ,  H01L23/522 ,  H01L23/528 ,  H01L43/02

    Abstract: A magnetic memory cell includes a substrate, a transistor, a first dielectric layer disposed on the substrate, a landing pad in the first dielectric layer, a second dielectric layer covering the first dielectric layer and the landing pad, a memory stack in the second dielectric layer, and a source line in the first dielectric layer. The first dielectric layer covers the transistor. The landing pad is situated in a first horizontal plane and is coupled to a drain region of the transistor. The memory stack has a bottom electrode connected to the landing pad and a top electrode electrically connected to a bit line. The source line is situated in a second horizontal plane and is connected to a source region of the transistor. The second horizontal plane and the first horizontal plane are not coplanar.

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