Invention Grant
- Patent Title: Semiconductor device having metal gate with nitrogen rich portion and titanium rich portion
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Application No.: US14840041Application Date: 2015-08-30
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Publication No.: US10008581B2Publication Date: 2018-06-26
- Inventor: Chun-Tsen Lu , Chien-Ming Lai , Lu-Sheng Chou , Ya-Huei Tsai , Ching-Hsiang Chiu , Yu-Tung Hsiao , Chen-Ming Huang , Kun-Ju Li , Yu-Ping Wang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN201510467637 20150803
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L29/66 ; H01L29/423 ; H01L29/49 ; C22C32/00 ; H01L29/51 ; H01L21/28 ; B32B1/00
Abstract:
A semiconductor device is disclosed. The semiconductor device includes a substrate and a gate structure on the substrate. The gate structure includes a high-k dielectric layer on the substrate and a bottom barrier metal (BBM) layer on the high-k dielectric layer. Preferably, the BBM layer includes a top portion, a middle portion, and a bottom portion, in which the top portion being a nitrogen rich portion, and the middle portion and the bottom portion being titanium rich portions.
Public/Granted literature
- US20170040435A1 SEMICONDUCTOR DEVICE WITH METAL GATE Public/Granted day:2017-02-09
Information query
IPC分类:
