公开(公告)号：US20240355880A1

公开(公告)日：2024-10-24

申请号：US18757772

申请日：2024-06-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsin-Yi Lee ,  Ji-Cheng Chen ,  Cheng-Lung Hung ,  Weng Chang ,  Chi On Chui

IPC: H01L29/06 ,  H01L21/02 ,  H01L29/423 ,  H01L29/49

CPC classification number: H01L29/0673 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/0245 ,  H01L21/02458 ,  H01L21/0262 ,  H01L29/0638 ,  H01L29/0676 ,  H01L29/42392 ,  H01L29/4925 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/4975

Abstract: A semiconductor device including a barrier layer surrounding a work function metal layer and methods of forming the same are disclosed. In an embodiment, a semiconductor device includes a semiconductor substrate; a first channel region over the semiconductor substrate; a second channel region over the first channel region; gate dielectric layers surrounding the first channel region and the second channel region; work function metal layers surrounding the gate dielectric layers; and barrier layers surrounding the work function metal layers, a first barrier layer surrounding the first channel region being merged with a second barrier layer surrounding the second channel region.

公开(公告)号：US12107150B2

公开(公告)日：2024-10-01

申请号：US18324442

申请日：2023-05-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsin-Yi Lee ,  Chi On Chui

IPC: H01L29/66 ,  C23C18/16 ,  H01L21/8238 ,  H01L29/06 ,  H01L29/40 ,  H01L29/423

CPC classification number: H01L29/66545 ,  C23C18/1657 ,  H01L21/823871 ,  H01L29/0665 ,  H01L29/401 ,  H01L29/42392 ,  H01L29/66742

Abstract: Embodiments utilize an electro-chemical process to deposit a metal gate electrode in a gate opening in a gate replacement process for a nanosheet FinFET device. Accelerators and suppressors may be used to achieve a bottom-up deposition for a fill material of the metal gate electrode.

公开(公告)号：US12101939B2

公开(公告)日：2024-09-24

申请号：US17883834

申请日：2022-08-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Chieh Lu ,  Sai-Hooi Yeong ,  Bo-Feng Young ,  Yu-Ming Lin ,  Chi On Chui ,  Han-Jong Chia ,  Chenchen Jacob Wang

IPC: H10B51/20 ,  H10B51/10 ,  H10B51/30

CPC classification number: H10B51/20 ,  H10B51/10 ,  H10B51/30

Abstract: A method of forming a memory device includes: forming a first layer stack and a second layer stack successively over a substrate, the first layer stack and the second layer stack having a same layered structure that includes a dielectric material, a channel material over the dielectric material, and a source/drain material over the channel material; forming openings that extend through the first layer stack and the second layer stack; forming inner spacers by replacing portions of the source/drain material exposed by the openings with a first dielectric material; lining sidewalls of the openings with a ferroelectric material; forming gate electrodes by filling the openings with an electrically conductive material; forming a recess through the first layer stack and the second layer stack, the recess extending from a sidewall of the second layer stack toward the gate electrodes; and filling the recess with a second dielectric material.

公开(公告)号：US12100751B2

公开(公告)日：2024-09-24

申请号：US18123596

申请日：2023-03-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Hsiang Fan ,  Tsung-Han Shen ,  Jia-Ming Lin ,  Wei-Chin Lee ,  Hsien-Ming Lee ,  Chi On Chui

IPC: H01L29/66 ,  H01L21/02 ,  H01L21/8234 ,  H01L29/78

CPC classification number: H01L29/6681 ,  H01L21/02274 ,  H01L21/823431 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/7851

Abstract: A method of forming a semiconductor device includes: forming a dummy gate over a fin, where the fin protrudes above a substrate; surrounding the dummy gate with a dielectric material; and replacing the dummy gate with a replacement gate structure, where replacing the dummy gate includes: forming a gate trench in the dielectric material, where forming the gate trench includes removing the dummy gate; forming a metal-gate stack in the gate trench, where forming the metal-gate stack includes forming a gate dielectric layer, a first work function layer, and a gap-filling material sequentially in the gate trench; and enlarging a volume of the gap-filling material in the gate trench.

公开(公告)号：US20240315044A1

公开(公告)日：2024-09-19

申请号：US18674134

申请日：2024-05-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Meng-Han Lin ,  Sai-Hooi Yeong ,  Chi On Chui

IPC: H10B51/40 ,  H01L21/8234 ,  H01L23/522 ,  H10B51/30

CPC classification number: H10B51/40 ,  H01L21/823475 ,  H01L23/5226 ,  H10B51/30

Abstract: Semiconductor devices and methods of manufacture are provided wherein a ferroelectric random access memory array is formed with bit line drivers and source line drivers formed below the ferroelectric random access memory array. A through via is formed using the same processes as the processes used to form individual memory cells within the ferroelectric random access memory array.

公开(公告)号：US20240297237A1

公开(公告)日：2024-09-05

申请号：US18660461

申请日：2024-05-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wen-Kai Lin ,  Yung-Cheng Lu ,  Che-Hao Chang ,  Chi On Chui

IPC: H01L29/66 ,  H01L21/02 ,  H01L21/311 ,  H01L21/8234 ,  H01L29/06 ,  H01L29/423 ,  H01L29/49 ,  H01L29/786

CPC classification number: H01L29/66553 ,  H01L21/0259 ,  H01L21/31116 ,  H01L21/823431 ,  H01L29/0665 ,  H01L29/42392 ,  H01L29/4908 ,  H01L29/4983 ,  H01L29/4991 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66636 ,  H01L29/66742 ,  H01L29/66795 ,  H01L29/78618 ,  H01L29/78696

Abstract: A method of forming a semiconductor device includes: forming a dummy gate structure over a nanostructure, where the nanostructure overlies a fin that protrudes above a substrate, where the nanostructure comprises alternating layers of a first semiconductor material and a second semiconductor material; forming openings in the nanostructure on opposing sides of the dummy gate structure, the openings exposing end portions of the first semiconductor material and end portions of the second semiconductor material; recessing the exposed end portions of the first semiconductor material to form first sidewall recesses; filling the first sidewall recesses with a multi-layer spacer film; removing at least one sublayer of the multi-layer spacer film to form second sidewall recesses; and forming source/drain regions in the openings after removing at least one sublayer, where the source/drain regions seal the second sidewall recesses to form sealed air gaps.

公开(公告)号：US12080777B2

公开(公告)日：2024-09-03

申请号：US17814743

申请日：2022-07-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsin-Yi Lee ,  Cheng-Lung Hung ,  Chi On Chui

IPC: H01L29/49 ,  H01L21/285 ,  H01L21/8234 ,  H01L29/40 ,  H01L29/78

CPC classification number: H01L29/4966 ,  H01L21/28568 ,  H01L21/82345 ,  H01L29/401 ,  H01L29/785

Abstract: A method includes forming a gate dielectric layer on a semiconductor region, and depositing a first aluminum-containing work function layer using a first aluminum-containing precursor. The first aluminum-containing work function layer is over the gate dielectric layer. A second aluminum-containing work function layer is deposited using a second aluminum-containing precursor, which is different from the first aluminum-containing precursor. The second aluminum-containing work function layer is deposited over the first aluminum-containing work function layer. A conductive region is formed over the second aluminum-containing work function layer.

公开(公告)号：US12069864B2

公开(公告)日：2024-08-20

申请号：US17186852

申请日：2021-02-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Ming Lin ,  Bo-Feng Young ,  Sai-Hooi Yeong ,  Han-Jong Chia ,  Chi On Chui

IPC: H10B51/30 ,  G11C8/14 ,  H10B51/10 ,  H10B51/20

CPC classification number: H10B51/30 ,  G11C8/14 ,  H10B51/10 ,  H10B51/20

Abstract: A device includes a semiconductor substrate; a first word line over the semiconductor substrate, the first word line providing a first gate electrode for a first transistor; and a second word line over the first word line. The second word line is insulated from the first word line by a first dielectric material, and the second word line providing a second gate electrode for a second transistor over the first transistor. The device further including a source line intersecting the first word line and the second word line; a bit line intersecting the first word line and the second word line; a memory film between the first word line and the source line; and a first semiconductor material between the memory film and the source line.

公开(公告)号：US12062695B2

公开(公告)日：2024-08-13

申请号：US18302132

申请日：2023-04-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsin-Yi Lee ,  Cheng-Lung Hung ,  Chi On Chui

IPC: H01L29/06 ,  H01L27/092 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/0673 ,  H01L27/0924 ,  H01L29/66795 ,  H01L29/7851

Abstract: In an embodiment, a device includes: a channel region; a gate dielectric layer on the channel region; a first work function tuning layer on the gate dielectric layer, the first work function tuning layer including a p-type work function metal; a barrier layer on the first work function tuning layer; a second work function tuning layer on the barrier layer, the second work function tuning layer including a n-type work function metal, the n-type work function metal different from the p-type work function metal; and a fill layer on the second work function tuning layer.

公开(公告)号：US12046660B2

公开(公告)日：2024-07-23

申请号：US17813793

申请日：2022-07-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ming-Ho Lin ,  Cheng-I Lin ,  Chun-Heng Chen ,  Chi On Chui

IPC: H01L29/66 ,  H01L21/02 ,  H01L29/06 ,  H01L29/78 ,  H01L21/3213

CPC classification number: H01L29/66545 ,  H01L21/02274 ,  H01L21/0228 ,  H01L29/0653 ,  H01L29/66795 ,  H01L29/785 ,  H01L21/32134 ,  H01L21/32135

Abstract: A method includes forming a protruding structure, and forming a non-conformal film on the protruding structure using an Atomic Layer Deposition (ALD) process. The non-conformal film includes a top portion directly over the protruding structure, and a sidewall portion on a sidewall of the protruding structure. The top portion has a first thickness, and the sidewall portion has a second thickness smaller than the first thickness.