公开(公告)号：US20240347622A1

公开(公告)日：2024-10-17

申请号：US18747623

申请日：2024-06-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ming-Ho Lin ,  Cheng-I Lin ,  Chun-Heng Chen ,  Chi On Chui

IPC: H01L29/66 ,  H01L21/02 ,  H01L21/3213 ,  H01L29/06 ,  H01L29/78

CPC classification number: H01L29/66545 ,  H01L21/02274 ,  H01L21/0228 ,  H01L29/0653 ,  H01L29/66795 ,  H01L29/785 ,  H01L21/32134 ,  H01L21/32135

Abstract: A method includes forming a protruding structure, and forming a non-conformal film on the protruding structure using an Atomic Layer Deposition (ALD) process. The non-conformal film includes a top portion directly over the protruding structure, and a sidewall portion on a sidewall of the protruding structure. The top portion has a first thickness, and the sidewall portion has a second thickness smaller than the first thickness.

公开(公告)号：US20210134983A1

公开(公告)日：2021-05-06

申请号：US16880464

申请日：2020-05-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ming-Ho Lin ,  Cheng-I Lin ,  Chun-Heng Chen ,  Chi On Chui

IPC: H01L29/66 ,  H01L21/02 ,  H01L29/78 ,  H01L29/06

Abstract: A method includes forming a protruding structure, and forming a non-conformal film on the protruding structure using an Atomic Layer Deposition (ALD) process. The non-conformal film includes a top portion directly over the protruding structure, and a sidewall portion on a sidewall of the protruding structure. The top portion has a first thickness, and the sidewall portion has a second thickness smaller than the first thickness.

公开(公告)号：US20230207646A1

公开(公告)日：2023-06-29

申请号：US18178644

申请日：2023-03-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ming-Ho Lin ,  Chun-Heng Chen ,  Xiong-Fei Yu ,  Chi Oh Chui

IPC: H01L29/417 ,  H01L21/8234 ,  H01L29/78 ,  H01L29/66

CPC classification number: H01L29/41791 ,  H01L21/823431 ,  H01L29/785 ,  H01L29/66795

Abstract: A method includes forming a fin protruding over a substrate; forming a conformal oxide layer over an upper surface and along sidewalls of the fin; performing an anisotropic oxide deposition or an anisotropic plasma treatment to form a non-conformal oxide layer over the upper surface and along the sidewalls of the fin; and forming a gate electrode over the fin, the conformal oxide layer and the non-conformal oxide layer being between the fin and the gate electrode.

公开(公告)号：US11640977B2

公开(公告)日：2023-05-02

申请号：US17026976

申请日：2020-09-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ming-Ho Lin ,  Chun-Heng Chen ,  Xiong-Fei Yu ,  Chi On Chui

IPC: H01L21/76 ,  H01L29/417 ,  H01L21/8234 ,  H01L29/78 ,  H01L29/66

Abstract: A method includes forming a fin protruding over a substrate; forming a conformal oxide layer over an upper surface and along sidewalls of the fin; performing an anisotropic oxide deposition or an anisotropic plasma treatment to form a non-conformal oxide layer over the upper surface and along the sidewalls of the fin; and forming a gate electrode over the fin, the conformal oxide layer and the non-conformal oxide layer being between the fin and the gate electrode.

公开(公告)号：US20210098458A1

公开(公告)日：2021-04-01

申请号：US16805858

申请日：2020-03-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-I Lin ,  Chun-Heng Chen ,  Ming-Ho Lin ,  Chi-On Chui

IPC: H01L27/092 ,  H01L21/8238 ,  H01L21/02

Abstract: Provided are a deposition method, a semiconductor device and a method of fabricating the same. The semiconductor device includes a substrate and a dielectric structure. The substrate includes at least one fin thereon. The dielectric structure covers the at least one fin. A thickness of the dielectric structure located on a top surface of the at least one fin is greater than a thickness of the dielectric structure located on a sidewall of the at least one fin. The dielectric structure includes a first dielectric layer and a second dielectric layer. The first dielectric layer is conformally disposed on the at least one fin. The second dielectric layer is disposed on the first dielectric layer over the top surface of the at least one fin. A thickness of the second dielectric layer is greater than a thickness of the first dielectric layer.

公开(公告)号：US20210005727A1

公开(公告)日：2021-01-07

申请号：US17026976

申请日：2020-09-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ming-Ho Lin ,  Chun-Heng Chen ,  Xiong-Fei Yu ,  Chi On Chui

IPC: H01L29/417 ,  H01L21/8234 ,  H01L29/78 ,  H01L29/66

Abstract: A method includes forming a fin protruding over a substrate; forming a conformal oxide layer over an upper surface and along sidewalls of the fin; performing an anisotropic oxide deposition or an anisotropic plasma treatment to form a non-conformal oxide layer over the upper surface and along the sidewalls of the fin; and forming a gate electrode over the fin, the conformal oxide layer and the non-conformal oxide layer being between the fin and the gate electrode.

公开(公告)号：US12199158B2

公开(公告)日：2025-01-14

申请号：US18178644

申请日：2023-03-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ming-Ho Lin ,  Chun-Heng Chen ,  Xiong-Fei Yu ,  Chi On Chui

IPC: H01L21/76 ,  H01L21/8234 ,  H01L29/417 ,  H01L29/66 ,  H01L29/78

Abstract: A method includes forming a fin protruding over a substrate; forming a conformal oxide layer over an upper surface and along sidewalls of the fin; performing an anisotropic oxide deposition or an anisotropic plasma treatment to form a non-conformal oxide layer over the upper surface and along the sidewalls of the fin; and forming a gate electrode over the fin, the conformal oxide layer and the non-conformal oxide layer being between the fin and the gate electrode.

公开(公告)号：US20240395912A1

公开(公告)日：2024-11-28

申请号：US18790218

申请日：2024-07-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-I Lin ,  Ming-Ho Lin ,  Chun-Heng Chen ,  Yung-Cheng Lu

IPC: H01L29/66 ,  H01L21/8234 ,  H01L29/78

Abstract: A method of forming a semiconductor device includes forming a first layer on a semiconductor fin; forming a mask on the first layer, the mask being thicker on a top of the semiconductor fin than along a sidewall of the semiconductor fin. The first layer is thinned along the sidewall of the semiconductor fin using the mask. A second layer is formed on the semiconductor fin, the second layer covering the mask and the first layer. A dummy gate layer is formed on the semiconductor fin and patterned to expose a top surface of the semiconductor fin.

公开(公告)号：US12046660B2

公开(公告)日：2024-07-23

申请号：US17813793

申请日：2022-07-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ming-Ho Lin ,  Cheng-I Lin ,  Chun-Heng Chen ,  Chi On Chui

IPC: H01L29/66 ,  H01L21/02 ,  H01L29/06 ,  H01L29/78 ,  H01L21/3213

CPC classification number: H01L29/66545 ,  H01L21/02274 ,  H01L21/0228 ,  H01L29/0653 ,  H01L29/66795 ,  H01L29/785 ,  H01L21/32134 ,  H01L21/32135

Abstract: A method includes forming a protruding structure, and forming a non-conformal film on the protruding structure using an Atomic Layer Deposition (ALD) process. The non-conformal film includes a top portion directly over the protruding structure, and a sidewall portion on a sidewall of the protruding structure. The top portion has a first thickness, and the sidewall portion has a second thickness smaller than the first thickness.

公开(公告)号：US20250098205A1

公开(公告)日：2025-03-20

申请号：US18967154

申请日：2024-12-03

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ming-Ho Lin ,  Chun-Heng Chen ,  Xiong-Fei Yu ,  Chi On Chui

IPC: H01L29/417 ,  H01L21/8234 ,  H01L29/66 ,  H01L29/78

Abstract: A method includes forming a fin protruding over a substrate; forming a conformal oxide layer over an upper surface and along sidewalls of the fin; performing an anisotropic oxide deposition or an anisotropic plasma treatment to form a non-conformal oxide layer over the upper surface and along the sidewalls of the fin; and forming a gate electrode over the fin, the conformal oxide layer and the non-conformal oxide layer being between the fin and the gate electrode.