公开(公告)号：US20230207646A1

公开(公告)日：2023-06-29

申请号：US18178644

申请日：2023-03-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ming-Ho Lin ,  Chun-Heng Chen ,  Xiong-Fei Yu ,  Chi Oh Chui

IPC: H01L29/417 ,  H01L21/8234 ,  H01L29/78 ,  H01L29/66

CPC classification number: H01L29/41791 ,  H01L21/823431 ,  H01L29/785 ,  H01L29/66795

Abstract: A method includes forming a fin protruding over a substrate; forming a conformal oxide layer over an upper surface and along sidewalls of the fin; performing an anisotropic oxide deposition or an anisotropic plasma treatment to form a non-conformal oxide layer over the upper surface and along the sidewalls of the fin; and forming a gate electrode over the fin, the conformal oxide layer and the non-conformal oxide layer being between the fin and the gate electrode.