公开(公告)号：US10224228B2

公开(公告)日：2019-03-05

申请号：US15420211

申请日：2017-01-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minsung Kim ,  Myoung Soo Park ,  Dougyong Sung ,  Yun-Kwang Jeon

IPC: H01L21/67 ,  H01J37/32 ,  C23C16/44 ,  H01L21/683

Abstract: A substrate processing apparatus includes an electrostatic chuck which is made up of a base, a dielectric plate on the base, a chuck electrode in the dielectric plate, and a first heater section in the dielectric plate between the chuck electrode and the base. The first heater section includes first heaters that are separated from each other in a first direction, and respective first upper plate electrodes disposed between the first heaters and the base. The first upper plate electrodes are separated from each other in the first direction and respectively connected to the first heaters.

公开(公告)号：US09355857B2

公开(公告)日：2016-05-31

申请号：US14678491

申请日：2015-04-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kangmin Jeon ,  Kyung-Sun Kim ,  Dougyong Sung ,  Tae-Hwa Kim ,  Heungsik Park ,  Jung Min Kim

IPC: H01L21/31 ,  H01L21/3065 ,  H01L21/02 ,  H01L21/311 ,  H01L21/67 ,  H01J37/32

CPC classification number: H01L21/3065 ,  H01J37/32449 ,  H01J37/32816 ,  H01J37/32834 ,  H01J37/32889 ,  H01J2237/332 ,  H01J2237/334 ,  H01L21/02118 ,  H01L21/02274 ,  H01L21/30655 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/67069 ,  H01L27/11582

Abstract: Provided are a substrate manufacturing method and a substrate manufacturing apparatus used therefor. The substrate manufacturing method includes providing a substrate having a mask film into a chamber. A plasma reaction is induced in the chamber. A first gas and a second gas are alternately provided into the chamber to etch the substrate. Each of the first and second gases is provided into the chamber at a stabilized feed pressure including a pressure fluctuation profile comprising a square wave shape.

Abstract translation: 提供了一种基板制造方法和用于其的基板制造装置。 衬底制造方法包括将具有掩模膜的衬底提供到腔室中。 在室中诱导等离子体反应。 交替地将第一气体和第二气体提供到腔室中以蚀刻衬底。 第一和第二气体中的每一个以包括方波形状的压力波动分布的稳定的进料压力被提供到室中。

公开(公告)号：US12210045B2

公开(公告)日：2025-01-28

申请号：US17591751

申请日：2022-02-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byeongsang Kim ,  Dougyong Sung ,  Sungjin Kim ,  Yunhwan Kim ,  Inseok Seo ,  Seungbo Shim ,  Naohiko Okunishi ,  Minyoung Hur

IPC: G01R27/16 ,  C23C16/455 ,  C23C16/52 ,  H01L21/66 ,  H01L21/67 ,  H01L21/683

Abstract: An impedance measurement jig may include a first contact plate, a second contact plate, a cover plate, a plug, and an analyzer. The first contact plate may make electrical contact with an ESC in a substrate-processing apparatus. The second contact plate may make electrical contact with a focus ring configured to surround the ESC. The cover plate may be configured to cover an upper surface of the substrate-processing apparatus. The plug may be installed at the cover plate to selectively make contact with the first contact plate or the second contact plate. The analyzer may individually apply a power to the first contact plate and the second contact plate through the plug to measure an impedance of the ESC and an impedance of the focus ring. Thus, the impedances of the ESC and the focus ring may be individually measured to inspect the ESC and/or the focus ring.

公开(公告)号：US20240071737A1

公开(公告)日：2024-02-29

申请号：US18188540

申请日：2023-03-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sungwon Cho ,  Dohoon Kwon ,  Kyunghyun Kim ,  Dougyong Sung ,  Jungmo Yang ,  Younseon Wang ,  Younsok Choi

IPC: H01J37/32 ,  G01N9/00

CPC classification number: H01J37/32917 ,  G01N9/00 ,  H01J2237/24585

Abstract: A plasma sensor module may include an upper substrate, a lower substrate, at least one probe and a printed circuit board (PCB). The upper substrate may be configured to be exposed to plasma. The lower substrate may contact a lower surface of the upper substrate. The lower substrate may have a thickness that is thicker than a thickness of the upper substrate. The probe may be in the lower substrate. The PCB may be in the lower substrate. The PCB may be configured to apply an alternating current to the probe to detect a density of the plasma. Thus, the structural strength of the plasma sensor module may have improved structural strength.

公开(公告)号：US20200234964A1

公开(公告)日：2020-07-23

申请号：US16812925

申请日：2020-03-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hoyong Park ,  Namjun Kang ,  Dougyong Sung ,  Seungbo Shim ,  Junghyun Cho ,  Myungsun Choi

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/311 ,  H01L21/67

Abstract: Disclosed are a method of plasma etching and a method of fabricating a semiconductor device including the same. The method of plasma etching includes loading a substrate including an etch target onto a first electrode in a chamber, the chamber including the first electrode and a second electrode arranged to face each other, and etching the target. The etching the target includes applying a plurality of RF powers to one of the first and second electrodes. The plurality of RF powers may include a first RF power having a first frequency in a range from about 40 MHz to about 300 MHz, a second RF power having a second frequency in a range from about 100 kHz to about 10 MHz, and a third RF power having a third frequency in a range from about 10 kHz to about 5 MHz.

公开(公告)号：US10522374B2

公开(公告)日：2019-12-31

申请号：US15857047

申请日：2017-12-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minsung Kim ,  Myoung Soo Park ,  Dongyun Yeo ,  Dougyong Sung ,  Suho Lee ,  Yun-Kwang Jeon

IPC: H01L21/67 ,  H01L21/683 ,  H01J37/32 ,  H02N13/00 ,  H01L21/3065 ,  H01L21/324 ,  H01L21/311 ,  H01L21/3213

Abstract: An electrostatic chuck, a substrate processing apparatus, and a method of manufacturing a semiconductor device are provided. The electrostatic chuck comprises a chuck base, an insulation plate on the chuck base, a first heater comprising a cell heater in the insulation plate, and a heater controller configured to control the cell heater. The heater controller obtains a resistance of the cell heater and compares the resistance with a threshold value to control a heating power provided to the cell heater.

公开(公告)号：US20190013222A1

公开(公告)日：2019-01-10

申请号：US15857047

申请日：2017-12-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minsung Kim ,  Myoung Soo Park ,  Dongyun Yeo ,  Dougyong Sung ,  Suho Lee ,  Yun-Kwang Jeon

IPC: H01L21/67 ,  H02N13/00 ,  H01L21/683 ,  H01L21/324 ,  H01L21/3065 ,  H01J37/32

CPC classification number: H01L21/67248 ,  H01J37/321 ,  H01J37/32724 ,  H01J37/32733 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/32137 ,  H01L21/324 ,  H01L21/67069 ,  H01L21/67103 ,  H01L21/6831 ,  H01L21/6833 ,  H02N13/00

Abstract: An electrostatic chuck, a substrate processing apparatus, and a method of manufacturing a semiconductor device are provided. The electrostatic chuck comprises a chuck base, an insulation plate on the chuck base, a first heater comprising a cell heater in the insulation plate, and a heater controller configured to control the cell heater. The heater controller obtains a resistance of the cell heater and compares the resistance with a threshold value to control a heating power provided to the cell heater.

公开(公告)号：US20170229312A1

公开(公告)日：2017-08-10

申请号：US15423003

申请日：2017-02-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hoyong PARK ,  Namjun Kang ,  Dougyong Sung ,  Seungbo Shim ,  Junghyun Cho ,  Myungsun Choi

IPC: H01L21/3065 ,  H01L21/311 ,  H01J37/32 ,  H01L21/67

CPC classification number: H01L21/3065 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32532 ,  H01J2237/334 ,  H01L21/31116 ,  H01L21/67069 ,  H01L27/11582 ,  H01L28/90

Abstract: Disclosed are a method of plasma etching and a method of fabricating a semiconductor device including the same. The method of plasma etching includes loading a substrate including an etch target onto a first electrode in a chamber, the chamber including the first electrode and a second electrode arranged to face each other, and etching the target. The etching the target includes applying a plurality of RF powers to one of the first and second electrodes. The plurality of RF powers may include a first RF power having a first frequency in a range from about 40 MHz to about 300 MHz, a second RF power having a second frequency in a range from about 100 kHz to about 10 MHz, and a third RF power having a third frequency in a range from about 10 kHz to about 5 MHz.

公开(公告)号：US20170186586A1

公开(公告)日：2017-06-29

申请号：US15352952

申请日：2016-11-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sejin Oh ,  Je-Hun Woo ,  Chungho Cho ,  Dougyong Sung ,  Jang Gyoo Yang ,  Jaechul Jung

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/3065

CPC classification number: H01J37/32146 ,  H01J37/32128 ,  H01J37/32174 ,  H01J37/3244 ,  H01J37/32963 ,  H01J37/3299 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/31138 ,  H01L21/67069

Abstract: A plasma system includes a source electrode, an RF source power generation unit, an RF source power output unit, and a source power output managing unit. The source power output managing unit determines an amplitude and a duty cycle of a pulse RF source power based on information on an amplitude of a continuous wave RF source power.

公开(公告)号：US20160307740A1

公开(公告)日：2016-10-20

申请号：US15092965

申请日：2016-04-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jungmin Kim ,  Jin Young Bang ,  Sejin Oh ,  Taekyun Kang ,  Myoung Soo Park ,  Dougyong Sung

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32495 ,  H01J37/321 ,  H01J37/32477 ,  H01L21/6719 ,  H01L21/6831

Abstract: A substrate processing system and a method of coating a ceramic layer therewith are provided. The system may include a chamber and a ceramic layer on an inner surface of the chamber. The ceramic layer may include yttrium oxyfluoride (YxOyFz), where x=1, y=1, 2, and z=1, 2.

Abstract translation: 提供了一种衬底处理系统及其陶瓷层的涂覆方法。 该系统可以在腔室的内表面上包括腔室和陶瓷层。 陶瓷层可以包括氟化钇（YxOyFz），其中x = 1，y = 1,2和z = 1,2。