PLASMA ETCHING APPARATUS AND SEMICONDUCTOR PROCESSING SYSTEM

    公开(公告)号:US20230078095A1

    公开(公告)日:2023-03-16

    申请号:US17695062

    申请日:2022-03-15

    Abstract: A plasma etching apparatus includes a housing having a processing space; a support inside the housing, the support configured to support a substrate and including at least one lower electrode; at least one upper electrode facing the at least one lower electrode; a sidewall electrode disposed on a sidewall of the housing; a lower radiofrequency (RF) power source connected to the at least one lower electrode and configured to apply RF power; an upper RF power source connected to the at least one upper electrode and configured to apply RF power; a lower insulator adjacent to the at least one lower electrode; an upper insulator adjacent to the at least one upper electrode; at least one lower detector embedded in the lower insulator; and at least one upper detector embedded in the upper insulator.

    PLASMA LIGHT DETECTION SYSTEM INCLUDING A SCINTILLATING WINDOW

    公开(公告)号:US20250085445A1

    公开(公告)日:2025-03-13

    申请号:US18633031

    申请日:2024-04-11

    Abstract: A substrate processing apparatus includes a process chamber providing a process space, a stage located in the process chamber and configured to support a substrate, a window coupled to a side of the process chamber, and a scintillator layer coupled to one side surface of the window. The scintillator layer covers a portion of the one side surface of the window which is less than the full window surface. A second surface corresponding to another portion of the one side surface of the window is exposed. Light emitted by a plasma in the process space passes through the window and is collected by an optical system and analyzed. Ultraviolet light passing through the scintillator is converted to longer wavelength, generally visible, light. Comparing the light passing through the bare window with the light passing through the scintillator layer enables analysis of the plasma.

    PLASMA SENSOR MODULE
    3.
    发明公开

    公开(公告)号:US20240071737A1

    公开(公告)日:2024-02-29

    申请号:US18188540

    申请日:2023-03-23

    CPC classification number: H01J37/32917 G01N9/00 H01J2237/24585

    Abstract: A plasma sensor module may include an upper substrate, a lower substrate, at least one probe and a printed circuit board (PCB). The upper substrate may be configured to be exposed to plasma. The lower substrate may contact a lower surface of the upper substrate. The lower substrate may have a thickness that is thicker than a thickness of the upper substrate. The probe may be in the lower substrate. The PCB may be in the lower substrate. The PCB may be configured to apply an alternating current to the probe to detect a density of the plasma. Thus, the structural strength of the plasma sensor module may have improved structural strength.

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