公开(公告)号：US06400537B2

公开(公告)日：2002-06-04

申请号：US09099683

申请日：1998-06-18

Applicant: Hiroshi Sakakima ,  Yousuke Irie ,  Yasuhiro Kawawake ,  Mitsuo Satomi

Inventor： Hiroshi Sakakima ,  Yousuke Irie ,  Yasuhiro Kawawake ,  Mitsuo Satomi

IPC: G11B539

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B2005/3996

Abstract: A thin film magnetic head includes an upper shield section, a lower shield section and a magnetoresistance device section between the upper shield section and the lower shield section. The magnetoresistance device section is connected to the upper shield section and the lower shield section through conductive layers. Current flows through the magnetoresistance device section via the upper shield and the lower shield.

Abstract translation: 薄膜磁头包括在上屏蔽部分和下屏蔽部分之间的上屏蔽部分，下屏蔽部分和磁阻装置部分。 磁阻器件部分通过导电层连接到上屏蔽部分和下屏蔽部分。 电流经由上屏蔽和下屏蔽流过磁阻器件部分。

公开(公告)号：US06111782A

公开(公告)日：2000-08-29

申请号：US270647

申请日：1999-03-16

Applicant: Hiroshi Sakakima ,  Yousuke Irie ,  Mitsuo Satomi ,  Yasuhiro Kawawake

Inventor： Hiroshi Sakakima ,  Yousuke Irie ,  Mitsuo Satomi ,  Yasuhiro Kawawake

IPC: G01R33/09 ,  G06K19/06 ,  G11B5/39 ,  G11C11/14 ,  G11C11/15 ,  G11C11/16 ,  G11C11/56 ,  H01F10/08 ,  H01F10/12 ,  H01F10/13 ,  H01F10/14 ,  H01F10/16 ,  H01F10/32 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/22 ,  H01L43/08 ,  H01L43/10 ,  H03F7/02 ,  H03F15/00 ,  G11C11/00

CPC classification number: H03F7/02 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11C11/15 ,  G11C11/16 ,  G11C11/5607 ,  H01F10/3281 ,  H01L27/222 ,  H01L43/10 ,  G11B2005/3996 ,  G11B5/3925 ,  G11C2211/5616

Abstract: A magnetoresistance effect device of the invention includes: a substrate; and a multilayer structure formed on the substrate. The multilayer structure includes a hard magnetic film, a soft magnetic film, and a non-magnetic metal film for separating the hard magnetic film from the soft magnetic film. The magnetization curve of the hard magnetic film has a good square feature, and the direction of a magnetization easy axis of the hard magnetic film substantially agrees to the direction of a magnetic field to be detected.

Abstract translation: 本发明的磁阻效应器件包括：衬底; 以及形成在基板上的多层结构。 多层结构包括硬磁膜，软磁膜和用于从硬磁膜分离硬磁膜的非磁性金属膜。 硬磁性膜的磁化曲线具有良好的正方形特征，硬磁性膜的磁化容易轴的方向基本上与要检测的磁场的方向一致。

公开(公告)号：US5909345A

公开(公告)日：1999-06-01

申请号：US802711

申请日：1997-02-19

Applicant: Yasuhiro Kawawake ,  Mitsuo Satomi ,  Hiroshi Sakakima

Inventor： Yasuhiro Kawawake ,  Mitsuo Satomi ,  Hiroshi Sakakima

IPC: G01R33/09 ,  G11B5/39 ,  H01F10/32 ,  H01L43/08

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/39 ,  G11B5/3903 ,  H01F10/3204 ,  H01F10/3268 ,  H01L43/08 ,  G11B2005/3996

Abstract: A magnetoresistive device of the present invention includes: a soft magnetic layer; a hard magnetic layer; a non-magnetic layer formed between the soft magnetic layer and the hard magnetic layer; and an interface magnetic layer, provided at an interface between the soft magnetic layer and the non-magnetic layer, for enhancing magnetic scattering, wherein the soft magnetic layer includes an amorphous structure.

公开(公告)号：US5691936A

公开(公告)日：1997-11-25

申请号：US702382

申请日：1996-08-14

Applicant: Hiroshi Sakakima ,  Takeshi Uenoyama ,  Yasuhiro Kawawake ,  Yousuke Irie

Inventor： Hiroshi Sakakima ,  Takeshi Uenoyama ,  Yasuhiro Kawawake ,  Yousuke Irie

IPC: G01R33/09 ,  G11B5/39 ,  G11C11/14 ,  G11C11/42 ,  H01F10/08 ,  H01F10/30 ,  H01F10/32 ,  H01L43/08 ,  H01L43/10 ,  G11C11/15

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11C11/14 ,  G11B2005/3996

Abstract: A magnetoresistive effect element having a large magnetoresistive change with a small magnetic field, and a memory element using the same. A semiconductor film to provide a window for excitation light is arranged on a substrate via a buffer layer. Another semiconductor film and a nonmagnetic metallic film (or a nonmagnetic insulating film) are arranged on the semiconductor film successively. A magnetic film having a square magnetization curve is arranged on the nonmagnetic metallic film (or a nonmagnetic insulating film). An electrode is arranged beneath the substrate and another electrode is arranged on the magnetic film. By radiating a laser light beam to the semiconductor film acting as a window, electrons having spin polarization are excited in the semiconductor film so as to utilize the dependency of the scattering of electrons at the surface of the magnetic film on the magnetization orientation of the magnetic film and the spin polarization state of the excited electrons.

Abstract translation: 具有磁阻小的磁阻变化的磁阻效应元件以及使用其的存储元件。 用于提供激发光的窗口的半导体膜经由缓冲层布置在衬底上。 在半导体膜上依次配置另一半导体膜和非磁性金属膜（或非磁性绝缘膜）。 具有方形磁化曲线的磁性膜被布置在非磁性金属膜（或非磁性绝缘膜）上。 电极布置在基底下方，另一电极布置在磁膜上。 通过对作为窗口的半导体膜照射激光束，在半导体膜中激发具有自旋极化的电子，以利用磁性膜表面的电子散射对磁性的磁化取向的依赖性 电子和激发电子的自旋极化状态。

公开(公告)号：US5459687A

公开(公告)日：1995-10-17

申请号：US144593

申请日：1993-10-28

Applicant: Hiroshi Sakakima ,  Mitsuo Satomi ,  Yousuke Irie

Inventor： Hiroshi Sakakima ,  Mitsuo Satomi ,  Yousuke Irie

IPC: G11C11/15 ,  G11C11/14 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08

CPC classification number: G11C11/14

Abstract: A high performance thin film memory device uses an artificial lattice magnetoresistance effect film, and operable with a low magnetic field and room temperature; and the device has a magnetic film part M, current feed lines R and R' for generating magnetic field for information data writing-in, and an information data readout line S of an artificial lattice magnetoresistance film of a lamination structure of a metallic magnetic thin layers such as Ni--Fe--Co system and a metallic nonmagnetic thin layers such as Cu.

Abstract translation: 高性能薄膜存储器件使用人造晶格磁阻效应膜，可在低磁场和室温下操作; 并且该器件具有磁膜部分M，用于产生用于信息数据写入的磁场的电流馈送线R和R'以及金属磁性薄片的层叠结构的人造晶格磁阻膜的信息数据读出线S 诸如Ni-Fe-Co系的层和诸如Cu的金属非磁性薄层。

公开(公告)号：US5403457A

公开(公告)日：1995-04-04

申请号：US111055

申请日：1993-08-24

Applicant: Kumio Nago ,  Isamu Aokura ,  Hitoshi Yamanishi ,  Koichi Osano ,  Hiroshi Sakakima ,  Toshiyuki Suemitsu

Inventor： Kumio Nago ,  Isamu Aokura ,  Hitoshi Yamanishi ,  Koichi Osano ,  Hiroshi Sakakima ,  Toshiyuki Suemitsu

IPC: G11B5/147 ,  H01F41/18 ,  H01F41/30 ,  C23C14/35 ,  G11B5/127

CPC classification number: B82Y25/00 ,  B82Y40/00 ,  G11B5/147 ,  H01F41/18 ,  H01F41/302 ,  Y10T29/49034

Abstract: The method of the invention provides a soft magnetic film having a high saturation magnetic flux density and an anisotropy of high magnetic permeability suitable for use in various types of magnetic heads at a high production yield by use of a sputtering apparatus provided with a sputtering electrode, which has permanent magnets arranged above a target 1 mainly of Fe or Co in such a way that lines of magnetic force 3 generated by said permanent magnets are in parallel to the surface of said target 1 and to the center line of said target 1 and have a magnetic strength pattern symmetric with respect to said center line while the lines of magnetic force to the right of said center line are of a reverse direction to those to the left of said center line.

Abstract translation: 本发明的方法通过使用具有溅射电极的溅射装置，提供了一种具有高饱和磁通密度和高磁导率的各向异性的软磁性膜，其适用于各种类型的磁头，以高产率生产， 其具有主要以Fe或Co布置在目标1上方的永磁体，使得由所述永磁体产生的磁力线3平行于所述目标1的表面和所述目标1的中心线并且具有 相对于所述中心线对称的磁强度图案，而所述中心线右侧的磁力线与所述中心线左侧的磁力线相反。

公开(公告)号：US5084795A

公开(公告)日：1992-01-28

申请号：US475209

申请日：1990-02-05

Applicant: Hiroshi Sakakima ,  Keita Ihara ,  Koichi Osano

Inventor： Hiroshi Sakakima ,  Keita Ihara ,  Koichi Osano

IPC: G11B5/187

CPC classification number: G11B5/1878

Abstract: A metal-in-gap type magnetic head having a small undulation of reproduction output caused by a pseudo-gap and method of manufacture thereof are provided, wherein the magnetic head employs as a back core a ferrite (particularly, a ferrite containing Sn) and employs in a metal portion which constitutes a front core an alloy film (particularly, a composition transition alloy film) having a composition expressed by T-M-X-N, where T is at least one metal element selected from a group consisting of Fe, Co and Ni, M is at least one metal element selected from a group consisting of Nb, Zr, Ti, Ta, Hf, Cr, Mo, W and Mn, X is at least one metalloid element selected from a group consisting of B, Si and Ge, and N is nitrogen.

公开(公告)号：US4670972A

公开(公告)日：1987-06-09

申请号：US606771

申请日：1984-04-10

Applicant: Hiroshi Sakakima

Inventor： Hiroshi Sakakima

IPC: G11B5/31 ,  G11B5/127 ,  G11B5/147 ,  G11B5/187 ,  G11B5/23

CPC classification number: G11B5/127 ,  G11B5/3183 ,  Y10T29/49043 ,  Y10T29/49055 ,  Y10T29/49067 ,  Y10T29/49796

Abstract: In the manufacture of a magnetic head, a magnetic layer is sputtered or evaporated on a surface of a first substrate of glass or nonmagnetic material and a nonmagnetic material such as glass is sputtered on one end face of the composite body formed by the substrate and the magnetic layer to form a gap filling layer. A second substrate of the same material and thickness as the first is bonded thereto with the magnetic gap filling being interposed therebetween. Magnetic material is sputtered or evaporated on the bonded substrates until a predetermined thickness is reached to form a second magnetic layer. The magnetic layers are then lapped to reveal an edge of the gap filling layer between adjacent edges of the two magnetic layers.Since the gap filling layer is formed by sputtering method, magnetic gap length can be precisely determined and since the thickness of the magnetic layers determines the track width, a magnetic head having a narrow width can be easily manufactured.

Abstract translation: PCT No.PCT / JP83 / 00260 Sec。 371日期1984年4月10日第 102（e）日期1984年4月10日PCT提交1983年8月10日。在制造磁头时，在第一玻璃或非磁性材料基板的表面上溅射或蒸发磁性层， 当玻璃溅射在由基板和磁性层形成的复合体的一个端面上以形成间隙填充层时。 与第一衬底相同的材料和厚度的第二衬底与其间插入有磁隙填充物而结合到其上。 将磁性材料溅射或蒸发在粘合的基材上，直至达到预定的厚度以形成第二磁性层。 然后研磨磁性层以露出两个磁性层的相邻边缘之间的间隙填充层的边缘。 由于通过溅射法形成间隙填充层，因此可以精确地确定磁隙长度，并且由于磁性层的厚度确定磁道宽度，所以可以容易地制造宽度窄的磁头。

公开(公告)号：US08263961B2

公开(公告)日：2012-09-11

申请号：US11578521

申请日：2004-10-22

Applicant: Koichi Osano ,  Shunsaku Muraoka ,  Hiroshi Sakakima

Inventor： Koichi Osano ,  Shunsaku Muraoka ,  Hiroshi Sakakima

IPC: H01L45/00

CPC classification number: G11C13/0007 ,  G11C13/003 ,  G11C2213/31 ,  G11C2213/78 ,  G11C2213/79 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/147 ,  Y10T428/1136 ,  Y10T428/115

Abstract: A thin film storage device includes a first electrode (3), a first variable resistance thin film (2), and a second electrode (1). The first electrode (3) is formed over a surface of a substrate (4). The first variable resistance thin film (2) is formed over a surface of the first electrode (3). The second electrode (1) is formed over a surface of the first variable resistance thin film (2). The first variable resistance thin film (2) comprises a material whose resistance in a bulk state changes in accordance with at least one of a lattice strain and a change of charge-order.

Abstract translation: 薄膜存储装置包括第一电极（3），第一可变电阻薄膜（2）和第二电极（1）。 第一电极（3）形成在衬底（4）的表面上。 第一可变电阻薄膜（2）形成在第一电极（3）的表面上。 第二电极（1）形成在第一可变电阻薄膜（2）的表面上。 第一可变电阻薄膜（2）包括其体积电阻根据晶格应变和电荷顺序的变化中的至少一个而变化的材料。

公开(公告)号：US06982932B2

公开(公告)日：2006-01-03

申请号：US10659964

申请日：2003-09-10

Applicant: Hiroshi Sakakima ,  Masahiro Birukawa ,  Kazuo Yokoyama ,  Masayoshi Hiramoto

Inventor： Hiroshi Sakakima ,  Masahiro Birukawa ,  Kazuo Yokoyama ,  Masayoshi Hiramoto

IPC: G11B11/00

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/00 ,  G11B5/00813 ,  G11B5/012 ,  G11B5/39 ,  G11B5/3951 ,  G11B5/48 ,  G11B5/58 ,  G11B13/04 ,  G11B2005/0002 ,  G11B2005/0005 ,  G11B2005/0021 ,  G11B2005/3996

Abstract: A magnetic head for reproducing a signal recorded on a recording medium, includes a substrate, a magnetic head core provided on the substrate, having a magnetic gap, and a magnetoresistance device provided on the magnetic head core. The magnetic head core is provided in such a manner that a thickness direction of the magnetic head core around the magnetic gap is substantially the same as a track width direction of the recording medium.