Abstract:
A perpendicular magnetic recording medium adapted for high recording density and high data recording rate comprises a non-magnetic substrate having at least one surface with a layer stack formed thereon, the layer stack including a perpendicular recording layer containing a plurality of columnar-shaped magnetic grains extending perpendicularly to the substrate surface for a length, with a first end distal the surface and a second end proximal the surface, wherein each of the magnetic grains has: (1) a gradient of perpendicular magnetic anisotropy field Hk extending along its length between the first end and second ends; and (2) predetermined local exchange coupling strengths along the length.
Abstract:
A high performance TMR element is fabricated by inserting an oxygen surfactant layer (OSL) between a pinned layer and AlOx tunnel barrier layer in a bottom spin valve configuration. The pinned layer preferably has a SyAP configuration with an outer pinned layer, a Ru coupling layer, and an inner pinned layer comprised of CoFeXBY/CoFeZ wherein x=0 to 70 atomic %, y=0 to 30 atomic %, and z=0 to 100 atomic %. The OSL is formed by treating the CoFeZ layer with oxygen plasma. The AlOx tunnel barrier has improved uniformity of about 2% across a 6 inch wafer and can be formed from an Al layer as thin as 5 Angstroms. As a result, the Hin value can be decreased by ⅓ to about 32 Oe. A dR/R of 25% and a RA of 3 ohm-cm2 have been achieved for TMR read head applications.
Abstract:
A method of fabricating a magnetoelastic torque sensor includes plating a magnetoelastic material to a magnetically inert substrate, and its endowment with uniaxial magnetic anisotropy through the creation within the transducer element of stress anisotropy. The plating of magnetostrictive material to the magnetically inert substrate provides a less expensive torque element that exhibits desired levels of accuracy and reliability.
Abstract:
In a magnetic sensor, a lower terminal layer, a magnetosensitive layer, and a cover film are simultaneously patterned into substantially the same size. The opposing surface of the lower terminal layer, which opposes the magnetosensitive film is substantially superposed on one opposing surface of the magnetosensitive film. The opposing surface of the upper terminal layer, which opposes the magnetosensitive film is formed into a shape smaller than and included in the other opposing surface of the magnetosensitive film. This implements a magnetic sensor which uses a CPP structure and is yet readily processible and which includes a substantially accurate fine CPP structure in accordance with a desired output.
Abstract:
A magnetic sensor comprises magnetoresistive elements and permanent magnet films, which are combined together to form GMR elements formed on a quartz substrate having a square shape, wherein the permanent magnet films are paired and connected to both ends of the magnetoresistive elements, so that an X-axis magnetic sensor and a Y-axis magnetic sensor are realized by adequately arranging the GMR elements relative to the four sides of the quartz substrate. Herein, the magnetization direction of the pinned layer of the magnetoresistive element forms a prescribed angle of 45° relative to the longitudinal direction of the magnetoresistive element or relative to the magnetization direction of the permanent magnet film. Thus, it is possible to reliably suppress offset variations of bridge connections of the GMR elements even when an intense magnetic field is applied; and it is therefore possible to noticeably improve the resistant characteristics to an intense magnetic field.
Abstract:
A slider includes a slider main body and a thin-film magnetic head element. The slider main body has an air bearing surface, an air inflow end, and an air outflow end. The air bearing surface has a first part closer to the air outflow end, a second part closer to the air inflow end, and a border part between the first part and the second part. The second part is slanted against the first part so that the entire air bearing surface has a convex shape bent at the border part.
Abstract:
A head structure having a write head portion for writing data to magnetic media. The write head portion includes a first pole piece with a first pole tip, a probe pole piece having a probe pole tip for emitting magnetic flux from an ABS end thereof, an insulation stack positioned between the pole pieces, at least one write coil embedded in the insulation stack, a shaping layer positioned between the probe pole piece and the insulation stack for focusing flux to the probe pole tip, a trailing shield spaced apart from the pole, the trailing shield causing the magnetic flux to enter the media at an angle from a plane perpendicular to a surface of the media facing the pole, and a return pole piece.
Abstract:
A magnetic sensor comprises magnetoresistive elements and permanent magnet films, which are combined together to form GMR elements formed on a quartz substrate having a square shape, wherein the permanent magnet films are paired and connected to both ends of the magnetoresistive elements, so that an X-axis magnetic sensor and a Y-axis magnetic sensor are realized by adequately arranging the GMR elements relative to the four sides of the quartz substrate. Herein, the magnetization direction of the pinned layer of the magnetoresistive element forms a prescribed angle of 45° relative to the longitudinal direction of the magnetoresistive element or relative to the magnetization direction of the permanent magnet film. Thus, it is possible to reliably suppress offset variations of bridge connections of the GMR elements even when an intense magnetic field is applied; and it is therefore possible to noticeably improve the resistant characteristics to an intense magnetic field.
Abstract:
A magnetic head having a spin valve sensor that is fabricated utilizing an Al2O3, NiMn0, Si seed layer upon which a PtMn spin valve sensor layer structure is subsequently fabricated. In the preferred embodiment, the Si layer has a thickness of approximately 20 Å and the PtMn layer has a thickness of approximately 120 Å. An alternative fabrication process of the Si layer includes the overdeposition of the layer to a first thickness of from 15 Å to 45 Å followed by the etching back of the seed layer of approximately 5 Å to approximately 15 Å to its desired final thickness of approximately 20 Å. The Si layer results in an improved crystal structure to the subsequently fabricated PtMn and other spin valve sensor layers, such that the fabricated spin valve is thinner and exhibits increased ΔR/R and reduced coercivity.
Abstract:
In a magnetic sensor, a lower terminal layer, a magnetosensitive layer, and a cover film are simultaneously patterned into substantially the same size. The opposing surface of the lower terminal layer, which opposes the magnetosensitive film is substantially superposed on one opposing surface of the magnetosensitive film. The opposing surface of the upper terminal layer, which opposes the magnetosensitive film is formed into a shape smaller than and included in the other opposing surface of the magnetosensitive film. This implements a magnetic sensor which uses a CPP structure and is yet readily processible and which includes a substantially accurate fine CPP structure in accordance with a desired output.