公开(公告)号：US09236260B2

公开(公告)日：2016-01-12

申请号：US13328218

申请日：2011-12-16

Applicant: Christian René Bonhôte ,  Jeffrey S. Lille ,  Ricardo Ruiz ,  Georges Gibran Siddiqi

Inventor： Christian René Bonhôte ,  Jeffrey S. Lille ,  Ricardo Ruiz ,  Georges Gibran Siddiqi

IPC: H01L21/70 ,  H01L21/28 ,  H01L29/66 ,  H01L29/78 ,  H01L21/8238

CPC classification number: H01L21/28052 ,  H01L21/823814 ,  H01L21/823828 ,  H01L29/665 ,  H01L29/78

Abstract: An integrated circuit has a doped silicon semiconductor with regions of insulators and bare silicon. The bare silicon regions are isolated from other bare silicon regions. A semiconductor device on the doped silicon semiconductor has at least two electrical connections to form regions of patterned metal. A metal is electroplated directly on each of the regions of patterned metal to form plated connections without a seed layer. A self-aligned silicide is located under each plated connection, formed by annealing, for the regions of plated metal on bare silicon.

Abstract translation: 集成电路具有具有绝缘体和裸硅区域的掺杂硅半导体。 裸硅区域与其他裸硅区域隔离。 掺杂硅半导体上的半导体器件具有至少两个电连接以形成图案化金属的区域。 将金属直接电镀在图案化金属的每个区域上，以形成没有种子层的电镀连接。 自对准硅化物位于通过退火形成的每个电镀连接处，用于裸硅上的电镀金属区域。

公开(公告)号：US20130068719A1

公开(公告)日：2013-03-21

申请号：US13236484

申请日：2011-09-19

Applicant: Christian Rene' Bonhote ,  Jeffrey S. Lille ,  Ricardo Ruiz ,  Georges Gibran Siddiqi

Inventor： Christian Rene' Bonhote ,  Jeffrey S. Lille ,  Ricardo Ruiz ,  Georges Gibran Siddiqi

IPC: G11B5/84 ,  C25D5/02 ,  H01B13/00

CPC classification number: C25D1/20 ,  C25D1/10 ,  G11B5/855 ,  G11B5/858

Abstract: A method for making a master disk to be used in the nanoimprinting process to make patterned-media disks uses an electrically conductive substrate and guided self-assembly of a block copolymer to form patterns of generally radial lines and/or generally concentric rings of one of the block copolymer components. A metal is electroplated onto the substrate in the regions not protected by the lines and/or rings. After removal of the block copolymer component, the remaining metal pattern is used as an etch mask to fabricate either the final master disk or two separate molds that are then used to fabricate the master disk.

Abstract translation: 一种用于在纳米压印过程中制造母盘以使图案化介质盘使用导电基底并引导嵌段共聚物的自组装以形成大体径向线和/或大致同心环的图案的方法 嵌段共聚物组分。 在不受线路和/或环保护的区域中，将金属电镀到衬底上。 在除去嵌段共聚物组分之后，剩余的金属图案用作蚀刻掩模以制造最终的母盘或两个单独的模具，然后用于制造母盘。

公开(公告)号：US08230583B2

公开(公告)日：2012-07-31

申请号：US12646884

申请日：2009-12-23

Applicant: Jeffrey S. Lille

Inventor： Jeffrey S. Lille

IPC: G11B5/127 ,  H04R31/00

CPC classification number: G11B5/3146 ,  G11B5/11 ,  G11B5/1278 ,  G11B5/3116 ,  G11B5/315 ,  G11B5/3166 ,  G11B5/3169

Abstract: A method for self aligning a lapping guide with a structure of a write pole. A write pole is formed over a substrate and an electrically conductive material lapping guide material is deposited in a location that is removed from the write pole. A mask is then formed over a portion of the write pole and a portion of the electrically conductive material. A material removal process such as reactive ion etching can then be performed to remove a portion of the magnetic material that is not protected by the mask structure. An magnetic material is then electroplated over the write pole with the write pole, with the mask still in place. In this way, the electroplated material has an edge that is self aligned with an edge of the electrically conductive lapping guide material, both being defined by the same mask structure.

Abstract translation: 一种用于将研磨导向器与写入杆的结构自对准的方法。 写入极在衬底上形成，并且导电材料研磨引导材料沉积在从写柱移除的位置。 然后在写入极的一部分和导电材料的一部分上形成掩模。 然后可以执行诸如反应离子蚀刻的材料去除处理以去除未被掩模结构保护的磁性材料的一部分。 然后将磁性材料用写入极电镀在写入极上，同时掩模仍然在位。 以这种方式，电镀材料具有与导电研磨导向材料的边缘自对准的边缘，两者都由相同的掩模结构限定。

公开(公告)号：US07732071B2

公开(公告)日：2010-06-08

申请号：US11558846

申请日：2006-11-10

Applicant: Eric Edward Fullerton ,  Olav Hellwig ,  Jeffrey S. Lille ,  James Terrence Olson ,  Petrus Antonius VanDerHeijden ,  Henry Hung Yang

Inventor： Eric Edward Fullerton ,  Olav Hellwig ,  Jeffrey S. Lille ,  James Terrence Olson ,  Petrus Antonius VanDerHeijden ,  Henry Hung Yang

IPC: G11B5/66

CPC classification number: G11B5/855 ,  G11B5/66 ,  G11B5/667 ,  G11B5/7325

Abstract: A patterned perpendicular magnetic recording medium of the type that has spaced-apart pillars with magnetic material on their ends and with nonmagnetic trenches between the pillars is made with a method that allows use of a pre-etched substrate. The substrate has a generally planar surface at the trenches and comprises material that when heated will diffuse into the magnetic recording layer material and chemically react with one or more of the elements typically used in the recording layer. The pillars are formed of material that will not diffuse into the recording layer. After the recording layer is formed over the entire substrate so as to cover both the pillar ends and the trenches, the substrate is annealed. This results in the destruction or at least substantial reduction of any ferromagnetism in the recording layer material in the trenches so that the trenches are nonmagnetic. The annealing does not affect the recording layer on the ends of the pillars because the pillars are formed of material that will not diffuse into the recording layer.

Abstract translation: 具有在其端部上具有磁性材料的间隔开的柱和在柱之间的非磁性沟槽的类型的垂直磁记录介质是通过允许使用预蚀刻的衬底的方法制成的。 衬底在沟槽处具有大致平坦的表面，并且包括当加热时将扩散到磁记录层材料中并与通常用于记录层中的一种或多种元素发生化学反应的材料。 支柱由不会扩散到记录层中的材料形成。 在整个基板上形成记录层以覆盖柱端和沟槽两者之后，将基板退火。 这导致在沟槽中的记录层材料中的任何铁磁体的破坏或至少显着减少，使得沟槽是非磁性的。 退火不会影响支柱端部的记录层，因为支柱由不会扩散到记录层中的材料形成。

公开(公告)号：US07710691B2

公开(公告)日：2010-05-04

申请号：US11032395

申请日：2005-01-10

Applicant: Jeffrey R. Childress ,  Jeffrey S. Lille

Inventor： Jeffrey R. Childress ,  Jeffrey S. Lille

IPC: G11B5/39

CPC classification number: G11B5/3932 ,  B82Y25/00 ,  G01R33/093 ,  H01L29/66984 ,  H01L43/08

Abstract: In one illustrative example, a three terminal magnetic sensor (TTM) suitable for use in a magnetic head has a sensor stack structure which includes a base region, a collector region, and an emitter region. A first barrier layer separates the emitter region from the base region, and a second barrier layer separates the collector region from the base region. A plurality of terminals of the TTM include a base lead coupled to the base region, a collector lead coupled to the collector region, and an emitter lead coupled to the emitter region. Preferably, the base region consists of a free layer structure so as to have a relatively small thickness. A pinned layer structure is made part of the emitter region. An in-stack longitudinal biasing layer (LBL) structure is formed in stack with the sensor stack structure and has a magnetic moment that is parallel to a sensing plane of the TTM for magnetically biasing the free layer structure. The in-stack LBL structure is made part of the collector region which also includes a layer of semiconductor material. In one variation, the emitter region has the in-stack LBL structure and the collector region has the pinned layer structure. The TTM may comprise a spin valve transistor (SVT), a magnetic tunnel transistor (MTT), or a double junction structure.

Abstract translation: 在一个说明性示例中，适用于磁头的三端磁传感器（TTM）具有包括基极区域，集电极区域和发射极区域的传感器堆叠结构。 第一阻挡层将发射极区域与基极区域分开，并且第二阻挡层将集电极区域与基极区域分离。 TTM的多个端子包括耦合到基极区域的基极引线，耦合到集电极区域的集电极引线和耦合到发射极区域的发射极引线。 优选地，基区由自由层结构组成，以便具有相对较小的厚度。 被钉扎层结构是发射极区域的一部分。 堆叠纵向偏置层（LBL）结构与传感器堆叠结构堆叠形成，并且具有平行于TTM的感测平面的磁矩，用于磁偏置自由层结构。 叠层LBL结构是集成区域的一部分，其还包括半导体材料层。 在一个变型中，发射极区域具有叠层LBL结构，并且集电极区域具有钉扎层结构。 TTM可以包括自旋阀晶体管（SVT），磁隧道晶体管（MTT）或双结结构。

公开(公告)号：US20100002330A1

公开(公告)日：2010-01-07

申请号：US12217379

申请日：2008-07-03

Applicant: Jeffrey S. Lille

Inventor： Jeffrey S. Lille

IPC: G11B5/02

CPC classification number: G11B5/314 ,  G11B5/6064 ,  G11B2005/001 ,  G11B2005/0021

Abstract: Methods and structures for improving fly height control for thin film write heads utilized in thermally assisted recording are disclosed. Methods include the use of the TAR near field light source to provide a preheating pulse to improve the transient response when moving from one fly height to another prior to writing data. Methods and structures having an additional auxiliary optical heating source to avoid media overheating and replacement of embedded resistive heaters are also disclosed.

Abstract translation: 公开了用于改善用于热辅助记录中的薄膜写入头的飞行高度控制的方法和结构。 方法包括使用TAR近场光源提供预热脉冲，以在写入数据之前从一个飞行高度移动到另一个飞行高度时改善瞬态响应。 还公开了具有附加的辅助光学加热源以避免介质过热和嵌入式电阻加热器的更换的方法和结构。

公开(公告)号：US20090195930A1

公开(公告)日：2009-08-06

申请号：US12023997

申请日：2008-01-31

Applicant: Jeffrey S. Lille

Inventor： Jeffrey S. Lille

IPC: G11B5/60

CPC classification number: G11B5/6064 ,  G11B5/102 ,  G11B5/314 ,  G11B5/607 ,  G11B2005/0021

Abstract: A system according to one embodiment comprises a slider having an air bearing surface side and a flex side, the flex side being positioned on an opposite side of the slider as the air bearing surface side; electrical pads on the flex side of the slider; and a heating device in electrical communication with the electrical pads, where the heating device comprises a least one optical element A method according to one embodiment comprises positioning pads of a heating device towards pads on a slider; detecting an impedance in a circuit including the pads of the heating device; moving the heating device relative to the slider to minimize the impedance; and coupling the heating device to the slider. Additional systems and methods are provided.

Abstract translation: 根据一个实施例的系统包括具有空气轴承表面侧和柔性侧的滑块，柔性侧位于作为空气轴承表面侧的滑块的相对侧上; 滑块的柔性侧的电焊盘; 以及与所述电焊盘电连通的加热装置，其中所述加热装置包括至少一个光学元件。根据一个实施例的方法包括将加热装置的焊盘定位在滑块上的焊盘上; 检测包括加热装置的焊盘的电路中的阻抗; 相对于滑块移动加热装置以使阻抗最小化; 并将加热装置联接到滑块。 提供了其他系统和方法。

公开(公告)号：US20090195920A1

公开(公告)日：2009-08-06

申请号：US12012364

申请日：2008-01-31

Applicant: Christian R. Bonhote ,  Jeffrey S. Lille ,  Vladimir Nikitin ,  Aron Pentek

Inventor： Christian R. Bonhote ,  Jeffrey S. Lille ,  Vladimir Nikitin ,  Aron Pentek

IPC: G11B33/14

CPC classification number: G11B25/043 ,  G11B33/1493

Abstract: A method of reducing flux leakage between a main pole and a wrap around shield (WAS) is provided. A gap underneath a main pole is etched. Magnetic material is deposited in the gap. A layer of nonmagnetic material is deposited on the magnetic material, wherein the layer of nonmagnetic material reduces flux leakage between the main pole and the WAS.

Abstract translation: 提供了一种减少主极和围绕护罩（WAS）之间的漏磁的方法。 蚀刻主极下方的间隙。 磁性材料沉积在间隙中。 一层非磁性材料沉积在磁性材料上，其中非磁性材料层减少主极与WAS之间的漏磁。

公开(公告)号：US20080149490A1

公开(公告)日：2008-06-26

申请号：US11645397

申请日：2006-12-26

Applicant: Christian R. Bonhote ,  Jeffrey S. Lille ,  Xhavin Sinha

Inventor： Christian R. Bonhote ,  Jeffrey S. Lille ,  Xhavin Sinha

IPC: C23C28/00

CPC classification number: C25D5/02 ,  C25D7/123 ,  H01L21/76873 ,  H01L2221/1089

Abstract: Methods and structures for the electroplating on ultra-thin seed layers are disclosed. A dual layer structure is utilized, consisting of a thicker, highly conductive layer surrounding device structures. Within the device die, an ultra-thin seed layer is employed, which is electrically coupled to the conduction layer. Using this technique, electroplating of critical device structures can be carefully controlled and made uniform across the full diameter of the wafer. The technique also allow for the deployment of ultra-thin seed layers of varying thickness and composition in different locations within the circuit device, or in different die on the wafer.

Abstract translation: 公开了在超薄种子层上电镀的方法和结构。 使用双层结构，由围绕器件结构的较厚的高导电层组成。 在器件管芯内部，采用超薄种子层，其电耦合到导电层。 使用这种技术，关键器件结构的电镀可以被仔细地控制并在晶片的整个直径上均匀。 该技术还允许在电路装置内的不同位置或晶片上的不同模具中部署不同厚度和组成的超薄种子层。

公开(公告)号：US08673161B2

公开(公告)日：2014-03-18

申请号：US12345457

申请日：2008-12-29

Applicant: Christian R. Bonhôte ,  Jeffrey S. Lille ,  Ricardo Ruiz

Inventor： Christian R. Bonhôte ,  Jeffrey S. Lille ,  Ricardo Ruiz

IPC: B44C1/22 ,  B23P15/00 ,  C03C25/00 ,  C23F1/00 ,  G11B5/127 ,  H04R31/00

CPC classification number: G11B5/3163 ,  G11B5/1278 ,  G11B5/3123

Abstract: Methods for fabricating a device component are provided. A substrate comprising a RIE stop layer, an oxide layer formed on the RIE stop layer, and a RIE-able layer formed on the oxide layer may be provided. A resist layer may be patterned on the RIE-able layer. A metal layer may be formed on portions of the RIE-able layer that are not covered by the resist layer. The resist layer may be removed and an RIE performed to remove exposed portions of the RIE-able layer and portions of the oxide layer beneath the exposed portions of the RIE-able layer. Thereafter, the metal layer may be removed, and the component may be formed in an opening in the oxide layer formed during the RIE.

Abstract translation: 提供了制造器件部件的方法。 可以提供包括RIE停止层，形成在RIE停止层上的氧化物层和形成在氧化物层上的RIE能层的衬底。 抗蚀剂层可以在RIE能层上图案化。 可以在RIE能层的未被抗蚀剂层覆盖的部分上形成金属层。 可以去除抗蚀剂层，并且执行RIE以去除RIE能层的暴露部分和在RIE能层的暴露部分下方的氧化物层的部分。 此后，可以去除金属层，并且可以在RIE中形成的氧化物层的开口中形成该部件。