Invention Grant
US08673161B2 Structure formation using metal deposited on a RIE-able seedlayer
失效
使用沉积在可RIE的种子层上的金属的结构形成
- Patent Title: Structure formation using metal deposited on a RIE-able seedlayer
- Patent Title (中): 使用沉积在可RIE的种子层上的金属的结构形成
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Application No.: US12345457Application Date: 2008-12-29
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Publication No.: US08673161B2Publication Date: 2014-03-18
- Inventor: Christian R. Bonhôte , Jeffrey S. Lille , Ricardo Ruiz
- Applicant: Christian R. Bonhôte , Jeffrey S. Lille , Ricardo Ruiz
- Applicant Address: NL Amsterdam
- Assignee: HGST Netherlands B.V.
- Current Assignee: HGST Netherlands B.V.
- Current Assignee Address: NL Amsterdam
- Agency: Patterson & Sheridan, LLP
- Main IPC: B44C1/22
- IPC: B44C1/22 ; B23P15/00 ; C03C25/00 ; C23F1/00 ; G11B5/127 ; H04R31/00

Abstract:
Methods for fabricating a device component are provided. A substrate comprising a RIE stop layer, an oxide layer formed on the RIE stop layer, and a RIE-able layer formed on the oxide layer may be provided. A resist layer may be patterned on the RIE-able layer. A metal layer may be formed on portions of the RIE-able layer that are not covered by the resist layer. The resist layer may be removed and an RIE performed to remove exposed portions of the RIE-able layer and portions of the oxide layer beneath the exposed portions of the RIE-able layer. Thereafter, the metal layer may be removed, and the component may be formed in an opening in the oxide layer formed during the RIE.
Public/Granted literature
- US20100163520A1 STRUCTURE FORMATION USING METAL DEPOSITED ON A RIE-ABLE SEEDLAYER Public/Granted day:2010-07-01
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