Invention Grant
US08673161B2 Structure formation using metal deposited on a RIE-able seedlayer 失效
使用沉积在可RIE的种子层上的金属的结构形成

Structure formation using metal deposited on a RIE-able seedlayer
Abstract:
Methods for fabricating a device component are provided. A substrate comprising a RIE stop layer, an oxide layer formed on the RIE stop layer, and a RIE-able layer formed on the oxide layer may be provided. A resist layer may be patterned on the RIE-able layer. A metal layer may be formed on portions of the RIE-able layer that are not covered by the resist layer. The resist layer may be removed and an RIE performed to remove exposed portions of the RIE-able layer and portions of the oxide layer beneath the exposed portions of the RIE-able layer. Thereafter, the metal layer may be removed, and the component may be formed in an opening in the oxide layer formed during the RIE.
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